mos晶体管参数二维建模的组合方法

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292923

A. S. Cherkaev, E. A. Makarov, Y.I. Vorontsov, S. Kalinin

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引用次数: 0

摘要

提出了一种新的二维工艺参数与“二维工艺与器件仿真软件包- MicroTec-3.02”电物理模型相结合的标定方法。该校准是基于“FACT”软件包计算的mos晶体管沟道和源漏区高精度一维掺杂曲线，以及实际测量的所研究器件的伏安特性来实现的。

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Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters

New combined method for calibrating the parameters of 2D technological and electrophysical models of "software package for two-dimensional process and device simulation - MicroTec-3.02" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles in the channel and source-drain areas of MOS-transistors which were calculated by "FACT" software package, as well as volt-ampere characteristics of researched devices, that were really measured.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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