外延GaN:Si中浅层受体的鉴定

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292908

N. S. Korzhavina, T. Shamirzaev, C.S. Zhuravlev, V. Mansurov, A.U. Nikitin, A. Toropov

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引用次数: 0

摘要

研究了氮化镓外延层中的浅层受体。通过硅掺杂源温度(TSi)确定掺杂浓度。用光致发光(PL)法测定了受体的化学性质。结果表明，GaN:Si的主要受体是背景杂质Mg (TSi <1350℃)和Si on N (TSi =1400℃)。

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Identification of Shallow Acceptors in Epitaxial GaN:Si

Shallow acceptors in doping epitaxial layers GaN:Si has been studied. A doping concentration was specified by temperature of Si-dopant source (TSi). The chemical nature of the acceptors has been determinated by photoluminescence (PL) method. It is shown that a dominant acceptors in GaN:Si are background impurity Mg at TSi <1350degC and Si on N state at TSi =1400degC.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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