Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters

Abstract

New combined method for calibrating the parameters of 2D technological and electrophysical models of "software package for two-dimensional process and device simulation - MicroTec-3.02" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles in the channel and source-drain areas of MOS-transistors which were calculated by "FACT" software package, as well as volt-ampere characteristics of researched devices, that were really measured.