Identification of Shallow Acceptors in Epitaxial GaN:Si

Abstract

Shallow acceptors in doping epitaxial layers GaN:Si has been studied. A doping concentration was specified by temperature of Si-dopant source (TSi). The chemical nature of the acceptors has been determinated by photoluminescence (PL) method. It is shown that a dominant acceptors in GaN:Si are background impurity Mg at TSi <1350degC and Si on N state at TSi =1400degC.