硅衬底上ZnO:Er薄膜的电学和光学特性

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292909

V. Malyutina-Bronskaya, V. Zalesski, T. R. Leonova, A. Mudryi

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摘要

本文研究了反应离子等离子溅射法制备的ZnO:Er薄膜的电流电压特性、容量电压特性和室温光致发光特性。结果表明，ZnO:Er薄膜的退火对其视发光有影响。

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Electrical and Optical Characteristics of ZnO:Er Films on Silicon Substrates

Here we present results of the investigations of current-voltage characteristics, capacity-voltage characteristics and room temperature photoluminescence of ZnO:Er films on silicon, which were obtained by a reactive ion-plasma sputtering. It is shown, that the influence of annealing of ZnO:Er films on visual luminescence takes place.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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