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Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs ß-(2×4)(001) GaAs同外延的成核
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292905
D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov
{"title":"Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs","authors":"D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov","doi":"10.1109/SIBEDM.2007.4292905","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292905","url":null,"abstract":"The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122138425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Matching Speciality of Electronic Ultrasonic Generators with Piezoelectric Oscillatory Systems 电子超声发生器与压电振荡系统的匹配特性
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292981
V. Khmelev, R. Barsukov, D.D. Genne, M. V. Khmelev
{"title":"Matching Speciality of Electronic Ultrasonic Generators with Piezoelectric Oscillatory Systems","authors":"V. Khmelev, R. Barsukov, D.D. Genne, M. V. Khmelev","doi":"10.1109/SIBEDM.2007.4292981","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292981","url":null,"abstract":"Article is devoted to problems of matching ultrasonic electronic generators with piezoelectric oscillatory systems by means LC circuits with adjusting reactive elements.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126322005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Markovian Estimation of Pulses Time Positions in Seismic Observing System 地震观测系统脉冲时间位置的马尔可夫估计
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292954
S. G. Filatova
{"title":"Markovian Estimation of Pulses Time Positions in Seismic Observing System","authors":"S. G. Filatova","doi":"10.1109/SIBEDM.2007.4292954","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292954","url":null,"abstract":"In must practical cases observable signal non-linearly depends on informational parameter. Classical approach to construction optimal filtering device consists of this dependence linearization. Well known quasi-linear algorithms may be unstable. Synthesis of the non-linear filtration algorithm is considered in this paper. The results of the experimental investigation of this algorithm are given.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"42 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125752569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nitrogen in Reflow Soldering of Lead-Free Solders 无铅焊料回流焊中的氮
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292917
S. Belyakov
{"title":"Nitrogen in Reflow Soldering of Lead-Free Solders","authors":"S. Belyakov","doi":"10.1109/SIBEDM.2007.4292917","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292917","url":null,"abstract":"Due to environmental and health demands for lead contamination, there is increasing pressure in legislation and a growing market demand to eliminate toxic materials. Lead-free soldering for the electronic industry is becoming a global trend, and several alloy systems alternatives have been recommended. The present article investigates the effect of changing soldering atmosphere from air to nitrogen, time above solder liquidus temperature and peak soldering temperature on solder wetting. It has been shown that spreading is better in nitrogen: the time above liquidus temperature can be reduced by about 18% or the peak temperatures can be reduced by about 6-8 degC, resulting in the same solder-spread for the nitrogen process, as when soldering is performed in the air atmosphere.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128059476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters mos晶体管参数二维建模的组合方法
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292923
A. S. Cherkaev, E. A. Makarov, Y.I. Vorontsov, S. Kalinin
{"title":"Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters","authors":"A. S. Cherkaev, E. A. Makarov, Y.I. Vorontsov, S. Kalinin","doi":"10.1109/SIBEDM.2007.4292923","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292923","url":null,"abstract":"New combined method for calibrating the parameters of 2D technological and electrophysical models of \"software package for two-dimensional process and device simulation - MicroTec-3.02\" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles in the channel and source-drain areas of MOS-transistors which were calculated by \"FACT\" software package, as well as volt-ampere characteristics of researched devices, that were really measured.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133741687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Linear Prediction Based Speech Codec on General Purpose Microcontroller 基于线性预测的通用微控制器语音编解码器
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292956
A. A. Baulin
{"title":"Linear Prediction Based Speech Codec on General Purpose Microcontroller","authors":"A. A. Baulin","doi":"10.1109/SIBEDM.2007.4292956","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292956","url":null,"abstract":"This paper considers realization issues of linear prediction based speech codec on single-chip system with ARM7TDMI core.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128424154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo Simulation of Silicon Nanowhiskers Growth 硅纳米晶须生长的蒙特卡罗模拟
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292903
A. Nastovjak, N. Shwartz, Z. Yanovitskaja, A. V. Zverev
{"title":"Monte Carlo Simulation of Silicon Nanowhiskers Growth","authors":"A. Nastovjak, N. Shwartz, Z. Yanovitskaja, A. V. Zverev","doi":"10.1109/SIBEDM.2007.4292903","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292903","url":null,"abstract":"Examination of silicon nanowhiskers (NWs) growth on Si(111) surface activated by gold was carried out using Monte Carlo simulation. Dependence of NW length on gold drop size was obtained. It was shown that for given temperature and deposition rate there is optimal drop size corresponding to maximal whisker growth rate. Effect of surface wetting by drop material was investigated: for strong wettability whiskers grew curved and for weak - drop became too movable and could slide down from the whisker top. It was demonstrated that combination of two mechanisms of Si incorporation at Si-Au interface: diffusion through the drop bulk with following Si precipitation at interface and Si incorporation into drop perimeter due surface diffusion is the most optimal for vertical Si nanowhiskers growth.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129140926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optical Characteristics of Polycrystalline 3C-SiC for Harsh Environments 恶劣环境下多晶3C-SiC光学特性研究
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292900
Junho Jeong, G. Chung
{"title":"Optical Characteristics of Polycrystalline 3C-SiC for Harsh Environments","authors":"Junho Jeong, G. Chung","doi":"10.1109/SIBEDM.2007.4292900","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292900","url":null,"abstract":"Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 mum poly 3C-SiC grown at 1180degC occurred at 794.4 and 965.7 cm-1. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180degC becomes polycrystalline instead of the disordered crystal. The ratio of intensity I(LO)/I(TO) ap 1.0 means that the crystal defect of 3C-SiC/SiO2/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/SiO2, the phonon mode of C-O bonding appeared at 1122.6 cm-1. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and 1596.8 cm-1 respectively.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129210101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement of Electric Characteristics of Lateral Magnetotransistor 横向磁晶体管电特性的测量
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292922
A. V. Koslov, R. D. Tikhonov
{"title":"Measurement of Electric Characteristics of Lateral Magnetotransistor","authors":"A. V. Koslov, R. D. Tikhonov","doi":"10.1109/SIBEDM.2007.4292922","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292922","url":null,"abstract":"At absence of a magnetic field measurements of electric characteristics of samples p-n-p lateral dual-collector bipolar magnetosensitivity transistors in diffusion well are lead, which were made on the basis of SMC \"technological center\". Measurements were spent at inclusion of the transistor under scheme CE (common emitter) at the torn off contact to a substrate and at association of contacts of a substrate and base. Communication between the attitude of a full current of collectors to the general current of base and a substrate with factor of increasing of a base current is shown.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"248 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116161596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement Parameters of Ultrasonic Oscillatory System during Welding Thermoplastics 热塑性塑料焊接过程中超声振荡系统的测量参数
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292978
A.N. SIivin, A. D. Abramov, D. Abramenko
{"title":"Measurement Parameters of Ultrasonic Oscillatory System during Welding Thermoplastics","authors":"A.N. SIivin, A. D. Abramov, D. Abramenko","doi":"10.1109/SIBEDM.2007.4292978","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292978","url":null,"abstract":"In the article the basic problems interfering evolution of automatic-control systems by process ultrasonic welding are analyzed, measurements electric parameters of ultrasonic oscillatory system during welding thermoplastics, directed on search ways raise of strength a welded joint are executed.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114244892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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