横向磁晶体管电特性的测量

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292922

A. V. Koslov, R. D. Tikhonov

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引用次数: 0

摘要

在SMC“技术中心”的基础上，对扩散井中p-n-p横向双集电极双极磁敏晶体管样品在无磁场条件下的电特性进行了测量。测量是在方案CE(共发射极)下的晶体管包含在与衬底的断开触点处以及衬底和基片触点的关联处进行的。显示了集电极的满电流对基极总电流的姿态与基极电流增加系数的基片之间的通信。

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Measurement of Electric Characteristics of Lateral Magnetotransistor

At absence of a magnetic field measurements of electric characteristics of samples p-n-p lateral dual-collector bipolar magnetosensitivity transistors in diffusion well are lead, which were made on the basis of SMC "technological center". Measurements were spent at inclusion of the transistor under scheme CE (common emitter) at the torn off contact to a substrate and at association of contacts of a substrate and base. Communication between the attitude of a full current of collectors to the general current of base and a substrate with factor of increasing of a base current is shown.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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