ß-(2×4)(001) GaAs同外延的成核

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292905

D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov

{"title":"ß-(2×4)(001) GaAs同外延的成核","authors":"D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov","doi":"10.1109/SIBEDM.2007.4292905","DOIUrl":null,"url":null,"abstract":"The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs\",\"authors\":\"D. Dmitriev, Y. G. Galitsyn, V. Mansurov, S.P. Moshenko, A. Toropov\",\"doi\":\"10.1109/SIBEDM.2007.4292905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.\",\"PeriodicalId\":106151,\"journal\":{\"name\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2007.4292905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4292905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对β -(2times4)(001)砷化镓表面生长初始阶段动力学的实验结果分析表明，生长过程从镓原子在初始结构的沟槽中吸附开始，即β -(2times4) - > α -(2x4)-非松弛的相变进行，然后出现2d核，并继续向外延生长新的砷化镓层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nucleation in Homoepitaxy on ß-(2×4)(001) GaAs

The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

自引率

0.00%

发文量