Chip最新文献

{"title":"On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector","authors":"Tong Xu ,&nbsp;Shulin Sha ,&nbsp;Kai Tang ,&nbsp;Xuefeng Fan ,&nbsp;Jinguo Liu ,&nbsp;Caixia Kan ,&nbsp;Gangyi Zhu ,&nbsp;Feifei Qin ,&nbsp;Daning Shi ,&nbsp;Mingming Jiang","doi":"10.1016/j.chip.2024.100118","DOIUrl":"10.1016/j.chip.2024.100118","url":null,"abstract":"<div><div>The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer, with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes. When illuminated upon ultraviolet light at 0 V bias, the Pt/GaN device exhibits significant photovoltaic performances, including a peak responsivity of 200.1 mA W⁻¹, external quantum efficiency of 65%, and other figures-of-merit. Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band, which considerably improves its photoresponse performance and robustness in application. To realize the multipurpose capability of the devices, we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU. Moreover, the prepared devices can be used as optical data receivers for optical communication. These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100118"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143378634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive trade-off strategy for SiC MOSFETs using buried-MOS configuration","authors":"Junhong Feng ,&nbsp;Li Zheng ,&nbsp;Xinhong Cheng ,&nbsp;Lingyan Shen ,&nbsp;Xuetong Zhou ,&nbsp;Wenyu Lu ,&nbsp;Jiayu Zeng","doi":"10.1016/j.chip.2024.100119","DOIUrl":"10.1016/j.chip.2024.100119","url":null,"abstract":"<div><div>While silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have entered commercial markets, they still rely on specialized device structural approaches tailored to meet specific application demands. The intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each other. This study aims to clarify these complex relationships and propose a well-balanced trade-off strategy. The proposed buried-MOS configuration ensures a harmonious balance among lower <em>R</em>_on,sp, reduced <em>C</em>_GD, and milder <em>E</em>_OX without compromising breakdown voltage (<em>BV</em>), thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their high-voltage, high-frequency performance and reliability. The experimental results quantitatively demonstrate the advantages of the buried-MOS structure: high-frequency figure of merit high-frequency figure of merit (HF-FOM) (<em>R</em>_DS,on × <em>C</em>_GD) by 2.5×, HF-FOM (<em>R</em>_DS,on × <em>Q</em>_GD) by 2.2× and Baliga figure of merit (BFOM = 4BV²/<em>R</em>_on,sp) by 1.7× compared with the conventional BOX-MOS. Importantly, this approach embodies both theoretical significance and practical applicability, which is compatible with the existing large-scale manufacturing processes and requires no additional steps.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100119"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143453223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Complex-Amplitude-Modulated Meta-Device for Optical Image Processing","authors":"Xincheng Jiang ,&nbsp;Peicheng Lin ,&nbsp;Yeang Zhang ,&nbsp;Ting Xu ,&nbsp;Yan-qing Lu ,&nbsp;Jun-long Kou","doi":"10.1016/j.chip.2025.100132","DOIUrl":"10.1016/j.chip.2025.100132","url":null,"abstract":"<div><div>Nowadays, convolutional neural networks (CNNs) have become a powerful tool in areas such as object recognition, and natural language processing (NLP). However, considering that electronic convolutional operation always contains million-level parameters and complex calculation process, it consumes a large number of computing resources and time. To overcome these limitations, we propose a design of complex-amplitude-modulated meta-device which could perform various functions of image processing. In this work, we demonstrate the excellent performance of two-dimensional edge detection and Gaussian filtering. The proposed convolutional system serves as a new optical computing hardware, and provides a new approach for CNNs, biological microscopy and near-infrared imaging.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 2","pages":"Article 100132"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143799508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chip-scale metaphotonic singularities: topological, dynamical, and practical aspects","authors":"Tianyue Li ,&nbsp;Mengjiao Liu ,&nbsp;Jiahao Hou ,&nbsp;Xing Yang ,&nbsp;Shubo Wang ,&nbsp;Shuming Wang ,&nbsp;Shining Zhu ,&nbsp;Din Ping Tsai ,&nbsp;Zhenlin Wang","doi":"10.1016/j.chip.2024.100109","DOIUrl":"10.1016/j.chip.2024.100109","url":null,"abstract":"<div><div>Research about singularities has been driving scientific advancements across mathematics and physics. Comprehending and harnessing the novel properties of singularities in photonics can facilitate the development of integrated micro-nano devices in diverse platforms. Herein, we provide a comprehensive overview of photonic singularities emerging in structured light fields and metamaterial structures. We classify them into several representative types: real-space singularities, momentum-space singularities, and parameter-space singularities, with discussions of their intriguing topological and dynamical properties. Moreover, we report on the latest applications of photonic singularities in broad areas, ranging from light routing, lasing, sensing, and optical manipulation to imaging and display. This review connects the singularity phenomena in different photonic systems, bridging the abstract concepts with emerging practical applications. It underscores the significance of photonic singularities in both fundamental science and various on-chip applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100109"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters","authors":"Feifei Qin ,&nbsp;Xueyao Lu ,&nbsp;Xiaoxuan Wang ,&nbsp;Chunxiang Guo ,&nbsp;Jiaqi Wu ,&nbsp;Xuefeng Fan ,&nbsp;Mingming Jiang ,&nbsp;Peng Wan ,&nbsp;Junfeng Lu ,&nbsp;Yongjin Wang ,&nbsp;Gangyi Zhu","doi":"10.1016/j.chip.2024.100115","DOIUrl":"10.1016/j.chip.2024.100115","url":null,"abstract":"<div><div><strong>Featured with light emission and detection coexistence phenomenon,</strong> <strong>nitride-based</strong> <strong>multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, most of the recent reports are based on planar structures.</strong> <strong>Three-dimensional</strong> <strong>(3D) structures</strong> <strong>are endowed with</strong> <strong>extra advantages in direction</strong><strong>,</strong> <strong>p</strong><strong>olarization</strong><strong>,</strong> <strong>and absorption modulation and may</strong> <strong>pioneer</strong> <strong>a new way to make the same thing over and over</strong> <strong>again</strong> <strong>with interesting properties. In this paper, we designed and fabricated a</strong> <strong>single-cantilever</strong> <strong>InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology. Experimental results indicate that the strain architecture of the</strong> <strong>multi-layer</strong> <strong>materials is the key principle for the</strong> <strong>self-warped</strong> <strong>device. The planar structure will bear greater compressive stress while the warped beam part has less stress,</strong> <strong>which</strong> <strong>result</strong><strong>s</strong> <strong>in differences in the optical and electrical performance. The</strong> <strong>strain-induced</strong> <strong>band bending highly influences the emission and detection properties, while the warped structure will introduce direction selectivity to the 3D device. As an emitter, 3D structures</strong> <strong>exhibit</strong> <strong>a directional emission with lower</strong> <strong>turn-on</strong> <strong>voltage, higher capacitance, increased luminous intensity, higher external quantum efficiency (EQE), high –3 dB bandwidth, and redshifted peak wavelength. Besides, it can serve as an emitter for</strong> <strong>directional-related</strong> <strong>optical communication. As a receiver, 3D structures have lower</strong> <strong>dark-current,</strong> <strong>higher photocurrent, and</strong> <strong>red-shifted</strong> <strong>response spectrum and also show directional dependence. These findings not only deepen the understanding of the working principle of the</strong> <strong>single-cantilever</strong> <strong>GaN devices but also provide important references for device performance optimization and new applications in visible light communication (VLC) technology.</strong></div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100115"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring","authors":"Xumin Gao ,&nbsp;Dongmei Wu ,&nbsp;Tianlong Xie ,&nbsp;Jialei Yuan ,&nbsp;Mingyuan Xie ,&nbsp;Yongjin Wang ,&nbsp;Haitao Zhao ,&nbsp;Gangyi Zhu ,&nbsp;Zheng Shi","doi":"10.1016/j.chip.2024.100113","DOIUrl":"10.1016/j.chip.2024.100113","url":null,"abstract":"<div><div>This work presents an integrated multi-quantum well (MQW) optoelectronic sensor leveraging III-nitride materials for multifunctionality on a monolithic chip. The sensor was fabricated using standard microfabrication techniques and adopted the identical InGaN/GaN MQWs, which enables simultaneous emission and detection. The sensor is featured with a double concentric circle structure which supports both on-chip and off-chip detection mechanisms, being capable of detecting environmental parameters like rotational speed, proximity, and sucrose concentration. It exhibits stable photocurrent response to rotational speed up to 8000 rpm, a 3 cm vertical detection range, and a linear response with 3.9 nA/% sensitivity to changes in sucrose concentration, which demonstrates the potential for diverse applications in industrial and biomedical fields.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100113"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon photonic integrated wideband radio frequency self-interference cancellation chip for over-the-air in-band full-duplex communication","authors":"Xinxin Su ,&nbsp;Meng Chao ,&nbsp;Xiuyou Han ,&nbsp;Han Liang ,&nbsp;Wenfu Zhang ,&nbsp;Shuanglin Fu ,&nbsp;Weiheng Wang ,&nbsp;Mingshan Zhao","doi":"10.1016/j.chip.2024.100114","DOIUrl":"10.1016/j.chip.2024.100114","url":null,"abstract":"<div><div>Compared with the traditional frequency division duplex and time division duplex, the in-band full-duplex (IBFD) technology can double the spectrum utilization efficiency and information transmission rate. However, radio frequency (RF) self-interference remains a key issue to be resolved for the application of IBFD. The photonic RF self-interference cancellation (SIC) scheme is endowed with the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. To meet the requirements of the new generation of mobile terminals and satellite payloads, the photonic RF SIC system is desired to be miniaturized, integrated, and low power consumption. In this study, the integrated photonic RF SIC scheme was proposed and demonstrated on a silicon-based platform. By utilizing the opposite bias points of the on-chip dual Mach-Zehnder modulators, the phase inversion relationship for SIC was realized over a broad frequency band. The time delay structure combining the optically switched waveguide and compact spiral waveguide enables continuous tuning of time over a wide bandwidth. The optical amplitude adjuster provides efficient amplitude control with a large dynamic range. After being packaged with optical, direct current, and RF design, the photonic RF SIC chip exhibits the interference cancellation capabilities across L, S, C, X, Ku, K, and Ka bands. In the S and C bands, a cancellation depth exceeding 20 dB was measured across a bandwidth of 4.8 GHz. An impressive cancellation depth of over 40 dB was achieved within a bandwidth of 80 MHz at a central frequency of 2 GHz. For the application of over-the-air IBFD communication at the newly promulgated center frequency of 6 GHz for 5G communication, the cancellation depth of 21.7 dB was demonstrated in the bandwidth of 100 MHz, and the low-power signals of interest were recovered successfully.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100114"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors","authors":"Xinyu Wang ,&nbsp;Die Wang ,&nbsp;Yuchen Tian ,&nbsp;Jing Guo ,&nbsp;Jinshui Miao ,&nbsp;Weida Hu ,&nbsp;Hailu Wang ,&nbsp;Kang Liu ,&nbsp;Lei Shao ,&nbsp;Saifei Gou ,&nbsp;Xiangqi Dong ,&nbsp;Hesheng Su ,&nbsp;Chuming Sheng ,&nbsp;Yuxuan Zhu ,&nbsp;Zhejia Zhang ,&nbsp;Jinshu Zhang ,&nbsp;Qicheng Sun ,&nbsp;Zihan Xu ,&nbsp;Peng Zhou ,&nbsp;Honglei Chen ,&nbsp;Wenzhong Bao","doi":"10.1016/j.chip.2024.100107","DOIUrl":"10.1016/j.chip.2024.100107","url":null,"abstract":"<div><div>Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments adopting two-dimensional materials as an example. High-performance MoS₂-/MoTe₂-based PDs were fabricated in the current work and the most suitable ROICs were identified to pair with them. This established a solid foundation for further researches in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100107"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications","authors":"Xiaoshuai An ,&nbsp;Sizhe Gui ,&nbsp;Yingxin Li ,&nbsp;Zhiqin Chu ,&nbsp;Kwai Hei Li","doi":"10.1016/j.chip.2024.100116","DOIUrl":"10.1016/j.chip.2024.100116","url":null,"abstract":"<div><div>A versatile optoelectronic device with ultrasensitive negative-positive pressure sensing capabilities, which is integrated with a wireless monitoring system, was fabricated and demonstrated in the current work. The device comprises a monolithic GaN chip with a polydimethylsiloxane cavity and nanograting, which effectively transduces pressure stimuli into optical changes detected by the GaN chip. The developed device exhibits an ultra-low detection limit for a mass of 0.03 mg, a pressure of 2.94 Pa, and a water depth of 0.3 mm, with a detection range of −100 kPa to 30.5 kPa and high stability. The versatility of the device is demonstrated by its ability to monitor heart pulse, grip strength, and respiration. Its integration with a wireless data transmission system enables real-time monitoring of human activity and heart rate underwater, making it suitable for precise measurements in various practical applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100116"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Q-enhancement of piezoelectric micro-oven-controlled MEMS resonators using honeycomb lattice phononic crystals","authors":"Yuhao Xiao ,&nbsp;Kewen Zhu ,&nbsp;Jinzhao Han ,&nbsp;Sheng Liu ,&nbsp;Guoqiang Wu","doi":"10.1016/j.chip.2024.100108","DOIUrl":"10.1016/j.chip.2024.100108","url":null,"abstract":"<div><div>In this article, a two-dimensional (2D) honeycomb lattice phononic crystal (PnC) based micro-oven with large bandgap is introduced to be integrated with piezoelectric microelectromechanical systems (MEMS) resonator to reduce anchor loss for timing applications. Finite element method (FEM) analysis and experimental measurement were performed to verify that the proposed PnC micro-oven design gives advantage in quality factor (<em>Q</em>). The measurement results demonstrate that the resonator with 2D honeycomb lattice PnC micro-oven shows a repeatable 1.7 times improvement of average <em>Q</em> compared with the bare one. The resonator with micro-oven control was further measured for frequency stability. The proposed piezoelectric micro-oven-controlled MEMS resonator achieves a frequency stability of less than ±10 ppb in a stable environment, which indicates promising potential for application in high-end timing field.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100108"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}