Chip最新文献

{"title":"Corrigendum to “Wang, Z. et al. Van der Waals ferroelectric transistors: the all-round artificial synapses for high-precision neuromorphic computing” Chip 2 (2023) 100044","authors":"Zhongwang Wang , Xuefan Zhou , Xiaochi Liu , Aocheng Qiu , Caifang Gao , Yahua Yuan , Yumei Jing , Dou Zhang , Wenwu Li , Hang Luo , Junhao Chu , Jian Sun","doi":"10.1016/j.chip.2024.100100","DOIUrl":"10.1016/j.chip.2024.100100","url":null,"abstract":"","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100100"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141700701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterizing the spatial potential of an ion trap chip","authors":"Qingqing Qin ,&nbsp;Ting Chen ,&nbsp;Xinfang Zhang ,&nbsp;Baoquan Ou ,&nbsp;Jie Zhang ,&nbsp;Chunwang Wu ,&nbsp;Yi Xie ,&nbsp;Wei Wu ,&nbsp;Pingxing Chen","doi":"10.1016/j.chip.2024.100126","DOIUrl":"10.1016/j.chip.2024.100126","url":null,"abstract":"<div><div>The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance. In this pursuit, we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangular-shaped electrode. Leveraging this expression, we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field. Distinct from the existing methods, our approach integrates a diverse array of experimental data, including the equilibrium positions of ions in a linear string, the equilibrium positions of single trapped ions, and trap frequencies, to effectively reduce the systematic errors. This approach provides considerable flexibility in voltage settings for data acquisition, making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings. In our experimental demonstration, we successfully minimized the discrepancy between observations and model predictions to a remarkable degree. The relative errors of secular frequencies were contained within ±0.5%, and the positional error of ions was constrained to less than 1.2 μm, which surpasses the performance of current methodologies.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100126"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143636751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular engineering enables high-performance hybrid perovskite photodetector","authors":"Peiding Liu ,&nbsp;Xing Zhang ,&nbsp;Bolei Zhang ,&nbsp;Yong Wang ,&nbsp;Wanbiao Hu ,&nbsp;Feng Qiu","doi":"10.1016/j.chip.2024.100125","DOIUrl":"10.1016/j.chip.2024.100125","url":null,"abstract":"<div><div>Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI₃ surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb²⁺ defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10⁻¹¹ A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 10¹² Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100125"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Angle-insensitive dual bound states in the continuum on germanium metasurface","authors":"Yiqing Liu ,&nbsp;Jinwen Lv ,&nbsp;Ye Fan ,&nbsp;Meixue Zong ,&nbsp;Shubin Zhang ,&nbsp;Zhengji Xu","doi":"10.1016/j.chip.2024.100121","DOIUrl":"10.1016/j.chip.2024.100121","url":null,"abstract":"<div><div>Metasurface-enabled bound states in the continuum (BICs) provide a novel solution for achieving exceptionally high quality factors (<em>Q</em> factors), which could overcome the limitations of traditional mid-infrared filters, sensors, lasers, and nonlinear sources. However, most BIC metasurfaces are restricted by their sensitivity to specific incident angles, limiting their practical applications. Here, we introduced a germanium-based metasurface that supports two BIC modes for different polarizations, exhibiting robust angle insensitivity. By leveraging geometric asymmetry, we effectively controlled BIC leakage and coupling. The device maintained infinite <em>Q</em> factors under oblique incidence with preserved symmetry, and exhibited stable quasi-BIC resonance wavelengths and linewidths even with broken symmetry, regardless of TE or TM polarization. This angular robustness has been validated both theoretically and experimentally, demonstrating its potential for broadening the applicability of high-performance mid-infrared optical devices.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100121"},"PeriodicalIF":0.0,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143487812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coexistence of unipolar and bipolar resistive switching in optical synaptic memristors and neuromorphic computing","authors":"Dongsheng Cui ,&nbsp;Mengjiao Pei ,&nbsp;Zhenhua Lin ,&nbsp;Yifei Wang ,&nbsp;Hong Zhang ,&nbsp;Xiangxiang Gao ,&nbsp;Haidong Yuan ,&nbsp;Yun Li ,&nbsp;Jincheng Zhang ,&nbsp;Yue Hao ,&nbsp;Jingjing Chang","doi":"10.1016/j.chip.2024.100122","DOIUrl":"10.1016/j.chip.2024.100122","url":null,"abstract":"<div><div>The human brain possesses a highly developed capability for sensing-memory-computing, and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck. In this study, Ga₂O₃ photoelectric memristors were successfully fabricated, enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage. The memristors with a Pt/Ga₂O₃/Pt sandwich structure exhibit the coexistence of unipolar resistive switching (URS) and bipolar resistive switching (BRS), coupled with an impressive switching ratio and stable retention characteristics. The device demonstrates robust photo-responsive properties to ultraviolet (UV) light, which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences. Exposure of the device to UV light elicits stable synaptic behaviors, including paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), as well as learning-forgetting-relearning behavior. Moreover, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing capabilities as a neuromorphic vision sensor (NVS). The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity. This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3% of handwritten digits by artificial neural networks (ANNs), which underscores the significant potential of artificial synapses in mimicking biological neural.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100122"},"PeriodicalIF":0.0,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing","authors":"Yinchi Liu ,&nbsp;Hao Zhang ,&nbsp;Jining Yang ,&nbsp;Dmitriy Anatolyevich Golosov ,&nbsp;Xiaohan Wu ,&nbsp;Chenjie Gu ,&nbsp;Shijin Ding ,&nbsp;Wenjun Liu","doi":"10.1016/j.chip.2024.100120","DOIUrl":"10.1016/j.chip.2024.100120","url":null,"abstract":"<div><div>In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf_0.5Zr_0.5O₂ (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2<em>P</em>r) of 55.4 μC/cm², a higher maximum dielectric constant, and nearly wakeup-free were realized by modulating the power of the microwave. It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules, which facilitates the crystallization at low temperature. Furthermore, an amorphous indium gallium zinc oxide ferroelectric field-effect transistor treated with microwave annealing was fabricated, and a competitive memory window of 1.5 V was substantially achieved. These findings offer insights into the integration of HfO₂ ferroelectric materials in non-volatile memory devices compatible with back-end-of-line (BEOL) in the future.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100120"},"PeriodicalIF":0.0,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143429649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive trade-off strategy for SiC MOSFETs using buried-MOS configuration","authors":"Junhong Feng ,&nbsp;Li Zheng ,&nbsp;Xinhong Cheng ,&nbsp;Lingyan Shen ,&nbsp;Xuetong Zhou ,&nbsp;Wenyu Lu ,&nbsp;Jiayu Zeng","doi":"10.1016/j.chip.2024.100119","DOIUrl":"10.1016/j.chip.2024.100119","url":null,"abstract":"<div><div>While silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have entered commercial markets, they still rely on specialized device structural approaches tailored to meet specific application demands. The intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each other. This study aims to clarify these complex relationships and propose a well-balanced trade-off strategy. The proposed buried-MOS configuration ensures a harmonious balance among lower <em>R</em>_on,sp, reduced <em>C</em>_GD, and milder <em>E</em>_OX without compromising breakdown voltage (<em>BV</em>), thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their high-voltage, high-frequency performance and reliability. The experimental results quantitatively demonstrate the advantages of the buried-MOS structure: high-frequency figure of merit high-frequency figure of merit (HF-FOM) (<em>R</em>_DS,on × <em>C</em>_GD) by 2.5×, HF-FOM (<em>R</em>_DS,on × <em>Q</em>_GD) by 2.2× and Baliga figure of merit (BFOM = 4BV²/<em>R</em>_on,sp) by 1.7× compared with the conventional BOX-MOS. Importantly, this approach embodies both theoretical significance and practical applicability, which is compatible with the existing large-scale manufacturing processes and requires no additional steps.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100119"},"PeriodicalIF":0.0,"publicationDate":"2024-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143453223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector","authors":"Tong Xu ,&nbsp;Shulin Sha ,&nbsp;Kai Tang ,&nbsp;Xuefeng Fan ,&nbsp;Jinguo Liu ,&nbsp;Caixia Kan ,&nbsp;Gangyi Zhu ,&nbsp;Feifei Qin ,&nbsp;Daning Shi ,&nbsp;Mingming Jiang","doi":"10.1016/j.chip.2024.100118","DOIUrl":"10.1016/j.chip.2024.100118","url":null,"abstract":"<div><div>The advantages of on-chip integrated photodetectors, such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer, with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes. When illuminated upon ultraviolet light at 0 V bias, the Pt/GaN device exhibits significant photovoltaic performances, including a peak responsivity of 200.1 mA W⁻¹, external quantum efficiency of 65%, and other figures-of-merit. Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band, which considerably improves its photoresponse performance and robustness in application. To realize the multipurpose capability of the devices, we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU. Moreover, the prepared devices can be used as optical data receivers for optical communication. These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100118"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143378634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters","authors":"Feifei Qin ,&nbsp;Xueyao Lu ,&nbsp;Xiaoxuan Wang ,&nbsp;Chunxiang Guo ,&nbsp;Jiaqi Wu ,&nbsp;Xuefeng Fan ,&nbsp;Mingming Jiang ,&nbsp;Peng Wan ,&nbsp;Junfeng Lu ,&nbsp;Yongjin Wang ,&nbsp;Gangyi Zhu","doi":"10.1016/j.chip.2024.100115","DOIUrl":"10.1016/j.chip.2024.100115","url":null,"abstract":"<div><div><strong>Featured with light emission and detection coexistence phenomenon,</strong> <strong>nitride-based</strong> <strong>multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, most of the recent reports are based on planar structures.</strong> <strong>Three-dimensional</strong> <strong>(3D) structures</strong> <strong>are endowed with</strong> <strong>extra advantages in direction</strong><strong>,</strong> <strong>p</strong><strong>olarization</strong><strong>,</strong> <strong>and absorption modulation and may</strong> <strong>pioneer</strong> <strong>a new way to make the same thing over and over</strong> <strong>again</strong> <strong>with interesting properties. In this paper, we designed and fabricated a</strong> <strong>single-cantilever</strong> <strong>InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology. Experimental results indicate that the strain architecture of the</strong> <strong>multi-layer</strong> <strong>materials is the key principle for the</strong> <strong>self-warped</strong> <strong>device. The planar structure will bear greater compressive stress while the warped beam part has less stress,</strong> <strong>which</strong> <strong>result</strong><strong>s</strong> <strong>in differences in the optical and electrical performance. The</strong> <strong>strain-induced</strong> <strong>band bending highly influences the emission and detection properties, while the warped structure will introduce direction selectivity to the 3D device. As an emitter, 3D structures</strong> <strong>exhibit</strong> <strong>a directional emission with lower</strong> <strong>turn-on</strong> <strong>voltage, higher capacitance, increased luminous intensity, higher external quantum efficiency (EQE), high –3 dB bandwidth, and redshifted peak wavelength. Besides, it can serve as an emitter for</strong> <strong>directional-related</strong> <strong>optical communication. As a receiver, 3D structures have lower</strong> <strong>dark-current,</strong> <strong>higher photocurrent, and</strong> <strong>red-shifted</strong> <strong>response spectrum and also show directional dependence. These findings not only deepen the understanding of the working principle of the</strong> <strong>single-cantilever</strong> <strong>GaN devices but also provide important references for device performance optimization and new applications in visible light communication (VLC) technology.</strong></div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100115"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chip-scale metaphotonic singularities: topological, dynamical, and practical aspects","authors":"Tianyue Li ,&nbsp;Mengjiao Liu ,&nbsp;Jiahao Hou ,&nbsp;Xing Yang ,&nbsp;Shubo Wang ,&nbsp;Shuming Wang ,&nbsp;Shining Zhu ,&nbsp;Din Ping Tsai ,&nbsp;Zhenlin Wang","doi":"10.1016/j.chip.2024.100109","DOIUrl":"10.1016/j.chip.2024.100109","url":null,"abstract":"<div><div>Research about singularities has been driving scientific advancements across mathematics and physics. Comprehending and harnessing the novel properties of singularities in photonics can facilitate the development of integrated micro-nano devices in diverse platforms. Herein, we provide a comprehensive overview of photonic singularities emerging in structured light fields and metamaterial structures. We classify them into several representative types: real-space singularities, momentum-space singularities, and parameter-space singularities, with discussions of their intriguing topological and dynamical properties. Moreover, we report on the latest applications of photonic singularities in broad areas, ranging from light routing, lasing, sensing, and optical manipulation to imaging and display. This review connects the singularity phenomena in different photonic systems, bridging the abstract concepts with emerging practical applications. It underscores the significance of photonic singularities in both fundamental science and various on-chip applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100109"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}