Chip最新文献 - Book学术

Q-enhancement of piezoelectric micro-oven-controlled MEMS resonators using honeycomb lattice phononic crystals 利用蜂巢晶格声波晶体增强压电微炉控 MEMS 谐振器的 Q 值

Chip Pub Date : 2024-09-19 DOI: 10.1016/j.chip.2024.100108

Yuhao Xiao , Kewen Zhu , Jinzhao Han , Sheng Liu , Guoqiang Wu

引用次数: 0

Suspended nanomembrane silicon photonic integrated circuits 悬浮纳米膜硅光子集成电路

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100104

Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng

{"title":"Suspended nanomembrane silicon photonic integrated circuits","authors":"Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng","doi":"10.1016/j.chip.2024.100104","DOIUrl":"10.1016/j.chip.2024.100104","url":null,"abstract":"<div>Leveraging the low linear and nonlinear absorption loss of silicon at mid-infrared (mid-IR) wavelengths, silicon photonic integrated circuits (PICs) have attracted significant attention for mid-IR applications including optical sensing, spectroscopy, and nonlinear optics. However, mid-IR silicon PICs typically show moderate performance compared to state-of-the-art silicon photonic devices operating in the telecommunication band. Here, we proposed and demonstrated suspended nanomembrane silicon (SNS) PICs with light-guiding within deep-subwavelength waveguide thickness for operation in the short-wavelength mid-IR region. We demonstrated key building components, namely, grating couplers, waveguide arrays, micro-resonators, etc., which exhibit excellent performances in bandwidths, back reflections, quality factors, and fabrication tolerance. Moreover, the results show that the proposed SNS PICs have high compatibility with the multi-project wafer foundry services. Our study provides an unprecedented platform for mid-IR integrated photonics and applications.</div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100104"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000224/pdfft?md5=cd27c1841a4799cf4cf48ad7ef718a52&pid=1-s2.0-S2709472324000224-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141691844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination 具有双离子植入边缘终端的垂直 GaN 肖特基势垒二极管的电气性能和可靠性分析

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100105

Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu

{"title":"Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination","authors":"Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu","doi":"10.1016/j.chip.2024.100105","DOIUrl":"10.1016/j.chip.2024.100105","url":null,"abstract":"<div>In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high Ion/Ioff ratio of approximately 109, and a low specific on-resistance of 1.93 mΩ cm2. When the ion implantation edge was terminated, the maximum VBR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm–2 and showed excellent reliability during pulse stress testing.</div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100105"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000236/pdfft?md5=39e7a0c9e23864accd3ca2de9e3d77c6&pid=1-s2.0-S2709472324000236-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141844463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy 通过非对称电极接触策略实现通道偏压控制的可重构硅纳米线晶体管

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100098

{"title":"Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy","authors":"","doi":"10.1016/j.chip.2024.100098","DOIUrl":"10.1016/j.chip.2024.100098","url":null,"abstract":"<div>Reconfigurable field-effect transistors (R-FETs) that can dynamically reconfigure the transistor polarity, from n-type to p-type channel or vice versa, represent a promising new approach to reduce the logic complexity and granularity of programmable electronics. Although R-FETs have been successfully demonstrated upon silicon nanowire (SiNW) channels, a pair of extra program gates is still needed to control the source/drain (S/D) contacts. In this work, we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact, where the FET channel polarity can be altered by changing the sign of channel bias Vds. These R-FETs were fabricated upon an orderly array of planar SiNW channels, grown via in-plane solid-liquid-solid mechanism, and contacted by Ti/Al and Pt/Au at the S/D electrodes, respectively. Remarkably, this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-type-doped (with indium dopants) or n-type-doped (phosphorus) SiNW channels, whereas the R-FET prototypes demonstrate an impressive high Ion/off ratio of > 106 and a steep subthreshold swing of 79 mV/dec. These results indicate a rather simple, compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.</div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100098"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000169/pdfft?md5=e3070abd5dfb82b3bdcb7e25f29beb8d&pid=1-s2.0-S2709472324000169-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141411691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly sensitive diamond X-ray detector array for high-temperature applications 用于高温应用的高灵敏度金刚石 X 射线探测器阵列

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100106

Wenjie Dou , Chaonan Lin , Wei Fan , Xun Yang , Chao Fang , Huaping Zang , Shaoyi Wang , Congxu Zhu , Zhi Zheng , Weimin Zhou , Chongxin Shan

{"title":"Highly sensitive diamond X-ray detector array for high-temperature applications","authors":"Wenjie Dou , Chaonan Lin , Wei Fan , Xun Yang , Chao Fang , Huaping Zang , Shaoyi Wang , Congxu Zhu , Zhi Zheng , Weimin Zhou , Chongxin Shan","doi":"10.1016/j.chip.2024.100106","DOIUrl":"10.1016/j.chip.2024.100106","url":null,"abstract":"<div><div>Diamond is a highly suitable material for X-ray detectors that can function effectively in harsh environments due to its unique properties such as ultrawide bandgap, high radiation resistance, excellent carrier mobility as well as remarkable chemical and thermal stability. However, the sensitivity of diamond X-ray detectors needs further improvement due to the relatively low X-ray absorption efficiency of diamond, and the exploration of single-crystal diamond array imaging still remains unexplored. In the current work, a 10 × 10 X-ray photodetector array was constructed from single-crystal diamond. To improve the sensitivity of the diamond X-ray detector, an asymmetric sandwich electrode structure was utilized. Additionally, trenches were created through laser cutting to prevent crosstalk between adjacent pixels. The diamond X-ray detector array exhibits exceptional performance, including a low detection limit of 4.9 nGy s−1, a sensitivity of 14.3 mC Gy−1 cm−2, and a light-dark current ratio of 18,312, which are among the most favorable values ever reported for diamond X-ray detectors. Furthermore, these diamond X-ray detectors can operate at high temperatures up to 450 °C, making them suitable for development in harsh environments.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100106"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000248/pdfft?md5=641348a92d64c73eaa83ace8518de946&pid=1-s2.0-S2709472324000248-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications 非易失性存储器应用中基于 HfO2 的铁电薄膜所面临的挑战和最新进展

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100101

引用次数: 0

A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors 二维半导体晶圆级集成的通用光电成像平台

Chip Pub Date : 2024-08-08 DOI: 10.1016/j.chip.2024.100107

Xinyu Wang , Die Wang , Yuchen Tian , Jing Guo , Jinshui Miao , Weida Hu , Hailu Wang , Kang Liu , Lei Shao , Saifei Gou , Xiangqi Dong , Hesheng Su , Chuming Sheng , Yuxuan Zhu , Zhejia Zhang , Jinshu Zhang , Qicheng Sun , Zihan Xu , Peng Zhou , Honglei Chen , Wenzhong Bao

{"title":"A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors","authors":"Xinyu Wang , Die Wang , Yuchen Tian , Jing Guo , Jinshui Miao , Weida Hu , Hailu Wang , Kang Liu , Lei Shao , Saifei Gou , Xiangqi Dong , Hesheng Su , Chuming Sheng , Yuxuan Zhu , Zhejia Zhang , Jinshu Zhang , Qicheng Sun , Zihan Xu , Peng Zhou , Honglei Chen , Wenzhong Bao","doi":"10.1016/j.chip.2024.100107","DOIUrl":"10.1016/j.chip.2024.100107","url":null,"abstract":"<div><div>Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments adopting two-dimensional materials as an example. High-performance MoS2-/MoTe2-based PDs were fabricated in the current work and the most suitable ROICs were identified to pair with them. This established a solid foundation for further researches in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100107"},"PeriodicalIF":0.0,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrigendum to “Wang, Z. et al. Van der Waals ferroelectric transistors: the all-round artificial synapses for high-precision neuromorphic computing” Chip 2 (2023) 100044 范德华铁电晶体管：用于高精度神经形态计算的全方位人工突触 "的更正，Chip 2 (2023) 100044

Chip Pub Date : 2024-07-01 DOI: 10.1016/j.chip.2024.100100

Zhongwang Wang, Xuefan Zhou, Xiaochi Liu, Aocheng Qiu, Caifang Gao, Yahua Yuan, Yumei Jing, Dou Zhang, Wenwu Li, Hang Luo, Junhao Chu, Jian Sun

引用次数: 0

Remote electric powering by germanium photovoltaic conversion of an Erbium-fiber laser beam 通过锗光电转换铒光纤激光束实现远程供电

Chip Pub Date : 2024-06-26 DOI: 10.1016/j.chip.2024.100099

Richard Soref , Francesco De Leonardis , Oussama Moutanabbir , Gerard Daligou

引用次数: 0

The on-chip thermoelectric cooler: advances, applications and challenges 片上热电冷却器：进展、应用和挑战

Chip Pub Date : 2024-06-01 DOI: 10.1016/j.chip.2024.100096

Chengjun Li, Yubo Luo, Wang Li, Boyu Yang, Chengwei Sun, Wenyuan Ma, Zheng Ma, Yingchao Wei, Xin Li, Junyou Yang

引用次数: 0