Chip最新文献

{"title":"Monolithic β-Ga2O3 gate driver integrated circuit","authors":"Ganesh Mainali,&nbsp;Dhanu Chettri,&nbsp;Glen Isaac Maciel García,&nbsp;Mritunjay Kumar,&nbsp;Vishal Khandelwal,&nbsp;Saravanan Yuvaraja,&nbsp;Xiaohang Li","doi":"10.1016/j.chip.2025.100189","DOIUrl":"10.1016/j.chip.2025.100189","url":null,"abstract":"<div><div>Digital control systems cannot directly provide the voltage swing and gate charge necessary for high-speed operation of power metal oxide semiconductor field-effect transistors. We report a monolithic β-Ga₂O₃ gate-driver integrated circuit fabricated on a 0.96 mm² footprint. The circuit integrates a RTL level-shifting stage with a push–pull output buffer, delivering up to 8.4 mA of drive current across a 0–7.5 V control range. A recessed thin-film β-Ga₂O₃ load resistor and a multifinger metal oxide semiconductor field-effect transistor architecture enable compact circuit implementation, while an Al₂O₃/SiO₂ bilayer gate dielectric reduces the interface traps (<em>D</em>_it ∼ 3.3 × 10¹² cm⁻² eV⁻¹) and hysteresis (<em>V</em>_HY &lt; 0.1 V). The driver achieves 996 ns/400 ns turn-on/turn-off times (<em>f</em>_sw,max ∼716 kHz) while driving a capacitive load of 840 pF. This work demonstrates β-Ga₂O₃'s potential as an emerging platform for future high-voltage power integrated circuits.</div></div><div>Digital control systems cannot directly provide the voltage swing and gate charge necessary for high-speed operation of power metal oxide semiconductor field-effect transistors. We report a monolithic β-Ga₂O₃ gate-driver integrated circuit fabricated on a 0.96 mm² footprint. The circuit integrates a RTL level-shifting stage with a push–pull output buffer, delivering up to 8.4 mA of drive current across a 0–7.5 V control range. A recessed thin-film β-Ga₂O₃ load resistor and a multifinger metal oxide semiconductor field-effect transistor architecture enable compact circuit implementation, while an Al₂O₃/SiO₂ bilayer gate dielectric reduces the interface traps (<em>D</em>_it ∼ 3.3 × 10¹² cm⁻² eV⁻¹) and hysteresis (<em>V</em>_HY &lt; 0.1 V). The driver achieves 996 ns/400 ns turn-on/turn-off times (<em>f</em>_sw,max ∼716 kHz) while driving a capacitive load of 840 pF. This work demonstrates β-Ga₂O₃'s potential as an emerging platform for future high-voltage power integrated circuits.</div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 3","pages":"Article 100189"},"PeriodicalIF":7.1,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148951489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 126.5 dB power supply rejection ratio, 1.02 ppm/°C bandgap reference in 0.18 μm CMOS","authors":"MengWei Wu,&nbsp;YuHang Qian,&nbsp;AiLin Yu,&nbsp;Chun Wang,&nbsp;Chi Liu,&nbsp;Guang Yang,&nbsp;Hai Huang","doi":"10.1016/j.chip.2025.100185","DOIUrl":"10.1016/j.chip.2025.100185","url":null,"abstract":"&lt;div&gt;&lt;div&gt;This study proposes a high-precision bandgap reference (BGR) architecture targeting advanced process nodes, addressing key challenges of process variations, temperature drift, and power supply noise. The design employs chopping to dynamically suppress operational amplifier offset and low-frequency noise. A pre-regulator stage incorporating cascode current mirrors significantly enhances power supply rejection ratio (PSRR) by isolating external supply disturbances. High-order temperature compensation, implemented through the superposition of proportional-to-absolute-temperature (PTAT) and curvature-compensated currents, effectively eliminates the nonlinear thermal drift component of the base-emitter voltage (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;V&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;B&lt;/mi&gt;&lt;mi&gt;E&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;). The core architecture integrates a bandgap core, chopping circuitry, preregulator, and fast-startup circuit. Postlayout simulations in complementary metal-oxide-semiconductor (CMOS) 180 nm technology demonstrate a temperature coefficient (TC) reduced from 10.52 ppm/°C to 1.02 ppm/°C over −40–125°C, a low-frequency PSRR of 126.53 dB at 1 Hz (ranging from 119 dB to 132 dB across process corners), output noise density of 281.56 nV/√Hz at 1 kHz, and output noise of 2.376 &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;msub&gt;&lt;mi&gt;V&lt;/mi&gt;&lt;mtext&gt;rms&lt;/mtext&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; at 0.1–10 Hz. Operating from a 3.3 V supply, the circuit achieves a line regulation of 0.002523%/V and exhibits a fast startup time of 2 μs.&lt;/div&gt;&lt;/div&gt;&lt;div&gt;This study proposes a high-precision bandgap reference (BGR) architecture targeting advanced process nodes, addressing key challenges of process variations, temperature drift, and power supply noise. The design employs chopping to dynamically suppress operational amplifier offset and low-frequency noise. A pre-regulator stage incorporating cascode current mirrors significantly enhances power supply rejection ratio (PSRR) by isolating external supply disturbances. High-order temperature compensation, implemented through the superposition of proportional-to-absolute-temperature (PTAT) and curvature-compensated currents, effectively eliminates the nonlinear thermal drift component of the base-emitter voltage (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;V&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;B&lt;/mi&gt;&lt;mi&gt;E&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;). The core architecture integrates a bandgap core, chopping circuitry, preregulator, and fast-startup circuit. Postlayout simulations in complementary metal-oxide-semiconductor (CMOS) 180 nm technology demonstrate a temperature coefficient (TC) reduced from 10.52 ppm/°C to 1.02 ppm/°C over −40–125°C, a low-frequency PSRR of 126.53 dB at 1 Hz (ranging from 119 dB to 132 dB across process corners), output noise density of 281.56 nV/√Hz at 1 kHz, and output noise of 2.376 &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;msub&gt;&lt;mi&gt;V&lt;/mi&gt;&lt;mtext&gt;rms&lt;/mtext&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; at 0.1–10 Hz. Operating from a 3.3 V supply, the circuit achieves a line regula","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 3","pages":"Article 100185"},"PeriodicalIF":7.1,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148951488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-dimensional photosensor arrays for motion detection systems","authors":"Jing Chen ,&nbsp;Tian-Ling Ren ,&nbsp;Lin Han","doi":"10.1016/j.chip.2025.100166","DOIUrl":"10.1016/j.chip.2025.100166","url":null,"abstract":"<div><div>Motion detection systems are pivotal in numerous technological domains, from security surveillance to autonomous navigation, offering real-time responsiveness to dynamic environments. Motion detection systems are essential for the development of artificial intelligence machine vision systems. Two-dimensional (2D) material–based photosensors possess ultrafast photoresponsivity, which has heralded a transformative era in motion detection capabilities, enhancing both spatial and temporal resolution, predicting their potential in accurate motion detection systems. Recently, photosensor arrays based on 2D materials have been used for accurate motion detection, indicating their prospects in future artificial intelligence machine vision systems. Here, we review the state-of-the-art motion detection systems based on 2D photosensors arrays, mainly including motion-edge computing, and motion-direction computing. Key findings from the examination of state-of-the-art technologies demonstrate significant strides in reducing system latency, power consumption, and the overall computational load by internalizing processing within the sensor domain. We provide comprehensive views of the merits and drawbacks of the 2D motion detection systems, projecting an optimistic future for compact and efficient motion detection systems. Finally, we discuss the opportunities, progress, and challenges of 2D materials in motion-detection-system applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 2","pages":"Article 100166"},"PeriodicalIF":7.1,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148184683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Core-shell microdisk with InGaN/GaN quantum wells for dual-band whispering gallery mode lasing","authors":"Jianqi Dong ,&nbsp;Zhuoming Liang ,&nbsp;Chenguang He ,&nbsp;Ningyang Liu ,&nbsp;Zhitao Chen ,&nbsp;Qiao Wang ,&nbsp;Kang Zhang ,&nbsp;Chunxiang Xu ,&nbsp;Xingfu Wang","doi":"10.1016/j.chip.2025.100150","DOIUrl":"10.1016/j.chip.2025.100150","url":null,"abstract":"<div><div>The development of high-quality, stable, and cost-effective micro/nano dual-band lasing remains a crucial challenge for multifunctional applications. In this study, we demonstrated high-Q dual-band whispering gallery mode lasing in an independent core-shell microdisk, emitting both ultraviolet and blue lasing. The GaN-based microdisk with InGaN/GaN quantum wells served as the core, while a SiO₂ layer was deposited on the sidewalls to construct the core-shell microdisk. This independent structure was fabricated using the graphically epitaxial lift-off method, which effectively mitigates light leakage issues associated with the substrate and facilitates flexible device integration. Compared to the microdisk without a SiO₂ shell coating, the threshold of ultraviolet lasing in the core-shell microdisk was reduced by 1.6 times, the quality factor (Q-factor) was enhanced by 21.7%, and blue lasing was successfully achieved. The underlying physical mechanisms were thoroughly analyzed through steady-state and time-resolved photoluminescence, along with finite-difference time-domain simulations. Furthermore, cooling from 300 K to 100 K could significantly enhance the lasing performance, increasing the Q-factor by factors of 1.7 and 1.9 in the ultraviolet and blue bands, respectively. Additionally, due to thermal expansion and thermo-optical effects, the blue lasing mode exhibits a temperature-dependent wavelength shift with a slope of −0.007 nm/K. The generation and optimization of dual-band lasing within a single microcavity offer new opportunities for broadband optical communication, high-sensitivity multi-wavelength biosensing, multi-label biomedical imaging, and high-density optical storage.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100150"},"PeriodicalIF":7.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145738218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Demonstration of acousto-optic modulation using an integrated Michelson interferometer","authors":"Zhiqiang Yang ,&nbsp;Siyi Wu ,&nbsp;Jun Yue ,&nbsp;Xingxu Liu ,&nbsp;Yan Li ,&nbsp;Zhengji Xu ,&nbsp;Chao Lu ,&nbsp;Zhaohui Li","doi":"10.1016/j.chip.2025.100164","DOIUrl":"10.1016/j.chip.2025.100164","url":null,"abstract":"<div><div>Integrated photonic acousto-optic (AO) modulators have emerged as critical components across diverse fields ranging from classical optical manipulation to quantum information processing. Here, by using a lithium niobate-chalcogenide heterogeneous integration platform, an integrated AO modulator based on an on-chip Michelson interferometer is demonstrated for the first time. A serpentine waveguide configuration is further incorporated to allow continuous propagation of surface acoustic waves through triple-folded waveguide segments, and the modulation efficiency is significantly enhanced by 7.3 dB through the extension of the effective AO interaction length and the utilization of bidirectional acoustic energy. Experimental results confirm an improvement in modulation efficiency to −18.8 dB at 15 dBm radio frequency power, while achieving a low half-wave voltage-length product of 0.02 V·cm. This research represents a significant stride forward in integrated AO modulation, providing new opportunities for microwave-to-optical conversion systems.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100164"},"PeriodicalIF":7.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147538656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A hybrid algorithm-driven approach for efficient design of terahertz molecule-specific metasensors","authors":"Mian Wang ,&nbsp;Ying Bao ,&nbsp;Weiping Wang ,&nbsp;Nan Li ,&nbsp;Xiaoyan Hu ,&nbsp;Tao Chu ,&nbsp;Yibin Ying ,&nbsp;Wendao Xu ,&nbsp;Bo Xiong ,&nbsp;Wei Ma","doi":"10.1016/j.chip.2025.100162","DOIUrl":"10.1016/j.chip.2025.100162","url":null,"abstract":"<div><div>Metasurfaces, owing to their capacity to significantly enhance localized electric fields, have emerged as crucial tools for improving sensor sensitivity and enabling efficient biomolecular detection in the terahertz range. However, most terahertz metasensors in current research focus only on a single molecular absorption peak of the analyte, limiting their ability to distinguish substances with similar absorption peaks. Achieving metasensors that precisely match molecular fingerprint spectra requires simultaneously optimizing multiple resonance modes, which remains a considerable challenge. Here, we introduced a hybrid algorithm-driven metasensor design approach (HAMD) that combines deep learning diffusion model with a genetic algorithm to efficiently design highly integrated metasensors capable of matching multiple molecular absorption peaks. The deep learning model incorporates the attention mechanism, enabling not only accurate prediction of sharp spectra but also high-fidelity inverse design of multiresonant spectra. The genetic algorithm further refines the local characteristics, enhancing the detection accuracy of the metasensor. We also experimentally demonstrated the sensing performance of the designed metasensors in detecting isomers, where Rabi splitting is observed and fingerprints of isomers are clearly recognized. Our approach contributes to advancing the design of molecule-specific metasensors and promotes the application of machine learning in the design of other photonic devices.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100162"},"PeriodicalIF":7.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146077426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Piezoelectric active air-cooling devices","authors":"Boyang Peng ,&nbsp;Zhiran Yi ,&nbsp;Yu Fan ,&nbsp;Xiuxuan Li ,&nbsp;Xingyu Wei ,&nbsp;Chenxi Wang ,&nbsp;Xuying Chen ,&nbsp;Jinghui Xu ,&nbsp;Wenming Zhang","doi":"10.1016/j.chip.2025.100163","DOIUrl":"10.1016/j.chip.2025.100163","url":null,"abstract":"<div><div>As the power consumption and miniaturization of electronic devices increase, traditional liquid-cooling and fan systems struggle to meet the high heat flux requirements, especially in space-constrained devices. Piezoelectric effect can convert electrical energy into mechanical energy, which is commonly used for sensing and actuating, especially in microscale due to its high integration capacity. Recently, the piezoelectric micro fan has attracted more attention due to its efficient heat dissipation with advantages in low energy consumption, high performance, and compact design. The review introduces the working principles of piezoelectric fans or jet-based coolers, summarizes their structural designs and their performances, and discusses the pros and cons in practical applications, particularly focusing on the impact of piezoelectric moving component designs, cavity designs, and airflow apertures on cooling performance. Additionally, the review explores the layout optimization and installation configurations of piezoelectric coolers, discussing the best usage scenarios. Overall, piezoelectric cooling technologies show great potential for future electronic device heat management, especially for high-performance, low-power, miniaturized devices.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100163"},"PeriodicalIF":7.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147448881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-chip signal isolation based on mode orthogonality in plasmonic dual-mode transmission line","authors":"Kai Lu ,&nbsp;Jiemin Wu ,&nbsp;Chenchen Li ,&nbsp;Ming Wan ,&nbsp;Shiqi Zhang ,&nbsp;Hao Gao ,&nbsp;Di Bao ,&nbsp;Tie Jun Cui","doi":"10.1016/j.chip.2025.100153","DOIUrl":"10.1016/j.chip.2025.100153","url":null,"abstract":"<div><div>We proposed a spoof surface plasmon polariton (SSPP) dual-mode transmission line (DMTL) formed by mirror serpentine periodic structures (MSPSs), which features the odd- and even-mode dispersion curves overlapping in a wide frequency range. With the mode exciter and mode recognizer in reciprocal form attached to both ends of SSPP DMTL, the two modes can be transmitted at the same time and their orthogonality was validated. An on-chip SSPP DMTL was implemented using the GaAs technology with a compact electrical dimension of 0.125∗0.011∗0.017<em>λ</em>³. The measured efficiencies of odd- and even-mode co-frequency signal transmissions were higher than −1.817 dB and −0.89 dB, respectively, while the degree of mode isolation was higher than 15 dB. The proposed SSPP DMTL doubles the communication capacity in a fixed frequency band and exhibits great potential in the composite communication systems.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100153"},"PeriodicalIF":7.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145977230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional graphene/organic transistor enabled by polyethyleneimine (PEIE)-induced charge tunneling and trapping effects","authors":"Lei Guo ,&nbsp;Chao Han ,&nbsp;Meiyu He ,&nbsp;Xingwei Han ,&nbsp;Jiayue Han ,&nbsp;Jun Wang","doi":"10.1016/j.chip.2025.100159","DOIUrl":"10.1016/j.chip.2025.100159","url":null,"abstract":"<div><div>Graphene/organic transistors (GOTs) hold significant potential for multifunctional bio-inspired optoelectronic applications, integrating sensing, filtering, and neuromorphic processing in a single device. In this study, we demonstrated a GOT based on a graphene/polyethyleneimine (PEIE)/bulk heterojunction structure, where the introduction of the PEIE barrier layer induces unique charge tunneling and trap-trapping behaviors of the photo-generated carriers, enabling adaptive switching between memory-free and long-term memory photoresponse under different light conditions. The device can be used for photoplethysmography measurement, image preprocessing, and artificial neural network pattern recognition. This work advances bio-inspired optoelectronic devices for intelligent vision and neuromorphic computing applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100159"},"PeriodicalIF":7.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147421359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanometer scale thermal measurement for next-generation electronics via scanning Joule expansion microscopy","authors":"Baoshi Qiao ,&nbsp;Qihai Jiang ,&nbsp;Zhiyao Zheng ,&nbsp;Yang Xu ,&nbsp;Huan Hu","doi":"10.1016/j.chip.2025.100156","DOIUrl":"10.1016/j.chip.2025.100156","url":null,"abstract":"<div><div>As semiconductor devices continue to scale down, increasing power densities introduce significant thermal management challenges. High-resolution thermal imaging is crucial for understanding localized heating and ensuring device reliability. Scanning Joule expansion microscopy (SJEM) has emerged as a powerful technique for nanoscale thermal characterization, offering high spatial and temperature resolution without the need for specialized thermal sensors. This review explores SJEM’s fundamental principles, historical advancements, and critical applications, including thermoelectric effects, current crowding, and conductive filament analysis. We further discuss the challenges and future opportunities in SJEM, such as enhancing the mechanistic understanding of thermal strain, developing specialized atomic force microscope probes, enabling real-time probe manipulation, integrating AI-driven analysis, and extending SJEM to low-temperature physics studies. As semiconductor technology advances, SJEM is expected to play an essential role in thermal failure analysis, nanoelectronics, and nanoscale energy transport research.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"5 1","pages":"Article 100156"},"PeriodicalIF":7.1,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147449000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}