Chip最新文献

{"title":"On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters","authors":"Feifei Qin ,&nbsp;Xueyao Lu ,&nbsp;Xiaoxuan Wang ,&nbsp;Chunxiang Guo ,&nbsp;Jiaqi Wu ,&nbsp;Xuefeng Fan ,&nbsp;Mingming Jiang ,&nbsp;Peng Wan ,&nbsp;Junfeng Lu ,&nbsp;Yongjin Wang ,&nbsp;Gangyi Zhu","doi":"10.1016/j.chip.2024.100115","DOIUrl":"10.1016/j.chip.2024.100115","url":null,"abstract":"<div><div><strong>Featured with light emission and detection coexistence phenomenon,</strong> <strong>nitride-based</strong> <strong>multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, most of the recent reports are based on planar structures.</strong> <strong>Three-dimensional</strong> <strong>(3D) structures</strong> <strong>are endowed with</strong> <strong>extra advantages in direction</strong><strong>,</strong> <strong>p</strong><strong>olarization</strong><strong>,</strong> <strong>and absorption modulation and may</strong> <strong>pioneer</strong> <strong>a new way to make the same thing over and over</strong> <strong>again</strong> <strong>with interesting properties. In this paper, we designed and fabricated a</strong> <strong>single-cantilever</strong> <strong>InGaN/GaN MQW diode with warped 3D microstructure via standard microfabrication technology. Experimental results indicate that the strain architecture of the</strong> <strong>multi-layer</strong> <strong>materials is the key principle for the</strong> <strong>self-warped</strong> <strong>device. The planar structure will bear greater compressive stress while the warped beam part has less stress,</strong> <strong>which</strong> <strong>result</strong><strong>s</strong> <strong>in differences in the optical and electrical performance. The</strong> <strong>strain-induced</strong> <strong>band bending highly influences the emission and detection properties, while the warped structure will introduce direction selectivity to the 3D device. As an emitter, 3D structures</strong> <strong>exhibit</strong> <strong>a directional emission with lower</strong> <strong>turn-on</strong> <strong>voltage, higher capacitance, increased luminous intensity, higher external quantum efficiency (EQE), high –3 dB bandwidth, and redshifted peak wavelength. Besides, it can serve as an emitter for</strong> <strong>directional-related</strong> <strong>optical communication. As a receiver, 3D structures have lower</strong> <strong>dark-current,</strong> <strong>higher photocurrent, and</strong> <strong>red-shifted</strong> <strong>response spectrum and also show directional dependence. These findings not only deepen the understanding of the working principle of the</strong> <strong>single-cantilever</strong> <strong>GaN devices but also provide important references for device performance optimization and new applications in visible light communication (VLC) technology.</strong></div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100115"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chip-scale metaphotonic singularities: topological, dynamical, and practical aspects","authors":"Tianyue Li ,&nbsp;Mengjiao Liu ,&nbsp;Jiahao Hou ,&nbsp;Xing Yang ,&nbsp;Shubo Wang ,&nbsp;Shuming Wang ,&nbsp;Shining Zhu ,&nbsp;Din Ping Tsai ,&nbsp;Zhenlin Wang","doi":"10.1016/j.chip.2024.100109","DOIUrl":"10.1016/j.chip.2024.100109","url":null,"abstract":"<div><div>Research about singularities has been driving scientific advancements across mathematics and physics. Comprehending and harnessing the novel properties of singularities in photonics can facilitate the development of integrated micro-nano devices in diverse platforms. Herein, we provide a comprehensive overview of photonic singularities emerging in structured light fields and metamaterial structures. We classify them into several representative types: real-space singularities, momentum-space singularities, and parameter-space singularities, with discussions of their intriguing topological and dynamical properties. Moreover, we report on the latest applications of photonic singularities in broad areas, ranging from light routing, lasing, sensing, and optical manipulation to imaging and display. This review connects the singularity phenomena in different photonic systems, bridging the abstract concepts with emerging practical applications. It underscores the significance of photonic singularities in both fundamental science and various on-chip applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100109"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring","authors":"Xumin Gao ,&nbsp;Dongmei Wu ,&nbsp;Tianlong Xie ,&nbsp;Jialei Yuan ,&nbsp;Mingyuan Xie ,&nbsp;Yongjin Wang ,&nbsp;Haitao Zhao ,&nbsp;Gangyi Zhu ,&nbsp;Zheng Shi","doi":"10.1016/j.chip.2024.100113","DOIUrl":"10.1016/j.chip.2024.100113","url":null,"abstract":"<div><div>This work presents an integrated multi-quantum well (MQW) optoelectronic sensor leveraging III-nitride materials for multifunctionality on a monolithic chip. The sensor was fabricated using standard microfabrication techniques and adopted the identical InGaN/GaN MQWs, which enables simultaneous emission and detection. The sensor is featured with a double concentric circle structure which supports both on-chip and off-chip detection mechanisms, being capable of detecting environmental parameters like rotational speed, proximity, and sucrose concentration. It exhibits stable photocurrent response to rotational speed up to 8000 rpm, a 3 cm vertical detection range, and a linear response with 3.9 nA/% sensitivity to changes in sucrose concentration, which demonstrates the potential for diverse applications in industrial and biomedical fields.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100113"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon photonic integrated wideband radio frequency self-interference cancellation chip for over-the-air in-band full-duplex communication","authors":"Xinxin Su ,&nbsp;Meng Chao ,&nbsp;Xiuyou Han ,&nbsp;Han Liang ,&nbsp;Wenfu Zhang ,&nbsp;Shuanglin Fu ,&nbsp;Weiheng Wang ,&nbsp;Mingshan Zhao","doi":"10.1016/j.chip.2024.100114","DOIUrl":"10.1016/j.chip.2024.100114","url":null,"abstract":"<div><div>Compared with the traditional frequency division duplex and time division duplex, the in-band full-duplex (IBFD) technology can double the spectrum utilization efficiency and information transmission rate. However, radio frequency (RF) self-interference remains a key issue to be resolved for the application of IBFD. The photonic RF self-interference cancellation (SIC) scheme is endowed with the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. To meet the requirements of the new generation of mobile terminals and satellite payloads, the photonic RF SIC system is desired to be miniaturized, integrated, and low power consumption. In this study, the integrated photonic RF SIC scheme was proposed and demonstrated on a silicon-based platform. By utilizing the opposite bias points of the on-chip dual Mach-Zehnder modulators, the phase inversion relationship for SIC was realized over a broad frequency band. The time delay structure combining the optically switched waveguide and compact spiral waveguide enables continuous tuning of time over a wide bandwidth. The optical amplitude adjuster provides efficient amplitude control with a large dynamic range. After being packaged with optical, direct current, and RF design, the photonic RF SIC chip exhibits the interference cancellation capabilities across L, S, C, X, Ku, K, and Ka bands. In the S and C bands, a cancellation depth exceeding 20 dB was measured across a bandwidth of 4.8 GHz. An impressive cancellation depth of over 40 dB was achieved within a bandwidth of 80 MHz at a central frequency of 2 GHz. For the application of over-the-air IBFD communication at the newly promulgated center frequency of 6 GHz for 5G communication, the cancellation depth of 21.7 dB was demonstrated in the bandwidth of 100 MHz, and the low-power signals of interest were recovered successfully.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100114"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications","authors":"Xiaoshuai An ,&nbsp;Sizhe Gui ,&nbsp;Yingxin Li ,&nbsp;Zhiqin Chu ,&nbsp;Kwai Hei Li","doi":"10.1016/j.chip.2024.100116","DOIUrl":"10.1016/j.chip.2024.100116","url":null,"abstract":"<div><div>A versatile optoelectronic device with ultrasensitive negative-positive pressure sensing capabilities, which is integrated with a wireless monitoring system, was fabricated and demonstrated in the current work. The device comprises a monolithic GaN chip with a polydimethylsiloxane cavity and nanograting, which effectively transduces pressure stimuli into optical changes detected by the GaN chip. The developed device exhibits an ultra-low detection limit for a mass of 0.03 mg, a pressure of 2.94 Pa, and a water depth of 0.3 mm, with a detection range of −100 kPa to 30.5 kPa and high stability. The versatility of the device is demonstrated by its ability to monitor heart pulse, grip strength, and respiration. Its integration with a wireless data transmission system enables real-time monitoring of human activity and heart rate underwater, making it suitable for precise measurements in various practical applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100116"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-optical combinational logical units featuring fifth-order cascade","authors":"Haiqi Gao ,&nbsp;Yu Shao ,&nbsp;Yipeng Chen ,&nbsp;Junren Wen ,&nbsp;Yuchuan Shao ,&nbsp;Yueguang Zhang ,&nbsp;Weidong Shen ,&nbsp;Chenying Yang","doi":"10.1016/j.chip.2024.100112","DOIUrl":"10.1016/j.chip.2024.100112","url":null,"abstract":"<div><div>Modern computational technologies are gradually encountering significant limitations, driving a shift toward alternative paradigms such as optical computing. In this study, novel all-optical combinational logic units based on diffractive neural networks (D²NNs) were introduced, which were designed to perform high-order logical operations efficiently and swiftly with the adoption of only two modulation layers. This innovative design exhibits increased processing speed, improved energy efficiency, robust environmental stability, and high error tolerance, making it exceptionally well-suited for a broad spectrum of applications in optical computing and communications. By leveraging the transfer learning, we successfully developed a fifth-order cascaded combinational logic circuit for a practical information transmission system. Furthermore, we revealed a pioneering application of the device in optical time division multiplexing (OTDM), demonstrating its capability to manage high-speed data transfer seamlessly without the need for electronic conversion. Extensive simulations and experimental validations demonstrate the potential of the model as a foundational technology for future optical computing architectures, which paves the way toward more sustainable and efficient optical data processing platforms.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100112"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Q-enhancement of piezoelectric micro-oven-controlled MEMS resonators using honeycomb lattice phononic crystals","authors":"Yuhao Xiao ,&nbsp;Kewen Zhu ,&nbsp;Jinzhao Han ,&nbsp;Sheng Liu ,&nbsp;Guoqiang Wu","doi":"10.1016/j.chip.2024.100108","DOIUrl":"10.1016/j.chip.2024.100108","url":null,"abstract":"<div><div>In this article, a two-dimensional (2D) honeycomb lattice phononic crystal (PnC) based micro-oven with large bandgap is introduced to be integrated with piezoelectric microelectromechanical systems (MEMS) resonator to reduce anchor loss for timing applications. Finite element method (FEM) analysis and experimental measurement were performed to verify that the proposed PnC micro-oven design gives advantage in quality factor (<em>Q</em>). The measurement results demonstrate that the resonator with 2D honeycomb lattice PnC micro-oven shows a repeatable 1.7 times improvement of average <em>Q</em> compared with the bare one. The resonator with micro-oven control was further measured for frequency stability. The proposed piezoelectric micro-oven-controlled MEMS resonator achieves a frequency stability of less than ±10 ppb in a stable environment, which indicates promising potential for application in high-end timing field.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100108"},"PeriodicalIF":0.0,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Suspended nanomembrane silicon photonic integrated circuits","authors":"Rongxiang Guo ,&nbsp;Qiyue Lang ,&nbsp;Zunyue Zhang ,&nbsp;Haofeng Hu ,&nbsp;Tiegen Liu ,&nbsp;Jiaqi Wang ,&nbsp;Zhenzhou Cheng","doi":"10.1016/j.chip.2024.100104","DOIUrl":"10.1016/j.chip.2024.100104","url":null,"abstract":"<div><p><strong>Leveraging the low linear and nonlinear absorption loss of silicon at</strong> <strong>mid-infrared</strong> <strong>(mid-IR) wavelengths, silicon photonic integrated circuits (PICs) have attracted significant attention for</strong> <strong>mid-IR</strong> <strong>applications including optical sensing, spectroscopy, and nonlinear optics. However,</strong> <strong>mid-IR</strong> <strong>silicon PICs typically show moderate performance compared to</strong> <strong>state-of-the-art</strong> <strong>silicon photonic devices operating in the telecommunication band. Here, we proposed and demonstrated suspended nanomembrane silicon (SNS) PICs with light</strong><strong>-</strong><strong>guiding within</strong> <strong>deep-subwavelength</strong> <strong>waveguide thickness for operation in the short</strong><strong>-</strong><strong>wavelength</strong> <strong>mid-IR</strong> <strong>region. We demonstrated key building components, namely, grating couplers, waveguide arrays,</strong> <strong>micro-resonators,</strong> <strong>etc.,</strong> <strong>which</strong> <strong>exhibit</strong> <strong>excellent performances in bandwidths, back reflections, quality factors, and fabrication tolerance. Moreover,</strong> <strong>the results</strong> <strong>show that the proposed SNS PICs have high compatibility with the</strong> <strong>multi-project</strong> <strong>wafer foundry services. Our study provides an unprecedented platform for</strong> <strong>mid-IR</strong> <strong>integrated</strong> <strong>photonics and applications.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100104"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000224/pdfft?md5=cd27c1841a4799cf4cf48ad7ef718a52&pid=1-s2.0-S2709472324000224-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141691844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination","authors":"Bo Li ,&nbsp;Jinpei Lin ,&nbsp;Linfei Gao ,&nbsp;Zhengweng Ma ,&nbsp;Huakai Yang ,&nbsp;Zhihao Wu ,&nbsp;Hsien-Chin Chiu ,&nbsp;Hao-Chung Kuo ,&nbsp;Chunfu Zhang ,&nbsp;Zhihong Liu ,&nbsp;Shuangwu Huang ,&nbsp;Wei He ,&nbsp;Xinke Liu","doi":"10.1016/j.chip.2024.100105","DOIUrl":"10.1016/j.chip.2024.100105","url":null,"abstract":"<div><p>In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (<em>V</em>_BR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high <em>I</em>_on/<em>I</em>_off ratio of approximately 10⁹, and a low specific on-resistance of 1.93 mΩ cm². When the ion implantation edge was terminated, the maximum <em>V</em>_BR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm^–2 and showed excellent reliability during pulse stress testing.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100105"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000236/pdfft?md5=39e7a0c9e23864accd3ca2de9e3d77c6&pid=1-s2.0-S2709472324000236-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141844463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy","authors":"","doi":"10.1016/j.chip.2024.100098","DOIUrl":"10.1016/j.chip.2024.100098","url":null,"abstract":"<div><p>Reconfigurable field-effect transistors (R-FETs) that can dynamically reconfigure the transistor polarity, from n-type to p-type channel or vice versa, represent a promising new approach to reduce the logic complexity and granularity of programmable electronics. Although R-FETs have been successfully demonstrated upon silicon nanowire (SiNW) channels, a pair of extra program gates is still needed to control the source/drain (S/D) contacts. In this work, we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact, where the FET channel polarity can be altered by changing the sign of channel bias <em>V</em>_ds. These R-FETs were fabricated upon an orderly array of planar SiNW channels, grown via in-plane solid-liquid-solid mechanism, and contacted by Ti/Al and Pt/Au at the S/D electrodes, respectively. Remarkably, this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-type-doped (with indium dopants) or n-type-doped (phosphorus) SiNW channels, whereas the R-FET prototypes demonstrate an impressive high <em>I</em>_on/off ratio of &gt; 10⁶ and a steep subthreshold swing of 79 mV/dec. These results indicate a rather simple, compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100098"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000169/pdfft?md5=e3070abd5dfb82b3bdcb7e25f29beb8d&pid=1-s2.0-S2709472324000169-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141411691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}