N- and p-type sub-10 nm high-performance transistors based on monolayer GeX2 (X = As, Sb)

IF 7.1

Chip Pub Date : 2025-03-29 DOI:10.1016/j.chip.2025.100144

Siyu Yang, Hao Shi, Yang Hu, Xinwei Guo, Xiaojia Yuan, Hengze Qu, Haibo Zeng, Shengli Zhang

{"title":"N- and p-type sub-10 nm high-performance transistors based on monolayer GeX2 (X = As, Sb)","authors":"Siyu Yang, Hao Shi, Yang Hu, Xinwei Guo, Xiaojia Yuan, Hengze Qu, Haibo Zeng, Shengli Zhang","doi":"10.1016/j.chip.2025.100144","DOIUrl":null,"url":null,"abstract":"<div><div>Exploring silicon alternatives for channel material is crucial for next-generation integrated circuits, two-dimensional (2D) materials are the most promising candidates due to their capability to suppress short-channel effects. In this study, we conducted simulations on the structural and electronic properties of 2D GeX2 (X = As, Sb), as well as the ballistic transport characteristics of sub-10 nm n- and p-type 2D GeX2 field effect transistors (FETs) based on first principles. The key metrics in terms of on-state current (Ion), delay time, and power consumption of n-type GeAs2 and p-type GeSb2 FETs can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices until the gate length (Lg) is shrunk to 5 nm. Specifically, the Ion of n-type GeAs2 FET and p-type GeSb2 FET reaches 2299 and 1480 μA/μm when Lg is 7 nm, surpassing InSe, MoS2, and WSe2 FETs. Our work highlights the potential of 2D GeX2 in future nanoelectronics.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 4","pages":"Article 100144"},"PeriodicalIF":7.1000,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chip","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2709472325000188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

Exploring silicon alternatives for channel material is crucial for next-generation integrated circuits, two-dimensional (2D) materials are the most promising candidates due to their capability to suppress short-channel effects. In this study, we conducted simulations on the structural and electronic properties of 2D GeX₂ (X = As, Sb), as well as the ballistic transport characteristics of sub-10 nm n- and p-type 2D GeX₂ field effect transistors (FETs) based on first principles. The key metrics in terms of on-state current (I_on), delay time, and power consumption of n-type GeAs₂ and p-type GeSb₂ FETs can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices until the gate length (L_g) is shrunk to 5 nm. Specifically, the I_on of n-type GeAs₂ FET and p-type GeSb₂ FET reaches 2299 and 1480 μA/μm when L_g is 7 nm, surpassing InSe, MoS₂_, and WSe₂ FETs. Our work highlights the potential of 2D GeX₂ in future nanoelectronics.

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基于单层GeX2 （X = As, Sb）的N型和p型亚10nm高性能晶体管

探索硅通道材料的替代品对于下一代集成电路至关重要，二维（2D）材料是最有希望的候选者，因为它们能够抑制短通道效应。在本研究中，我们基于第一性原理模拟了二维GeX2 （X = As, Sb）的结构和电子特性，以及10 nm以下n型和p型二维GeX2场效应晶体管（fet）的弹道输运特性。在栅极长度（Lg）缩小到5nm之前，n型GeAs2和p型GeSb2 fet的导通电流（Ion）、延迟时间和功耗等关键指标都可以满足国际半导体技术路线图对高性能器件的要求。其中，当Lg为7 nm时，n型GeAs2 FET和p型GeSb2 FET的离子达到2299和1480 μA/μm，超过了InSe、MoS2和WSe2 FET。我们的工作强调了二维GeX2在未来纳米电子学中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chip

CiteScore

2.80

自引率

0.00%

发文量