Chip最新文献_第2页

III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring

Chip Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100113

Xumin Gao , Dongmei Wu , Tianlong Xie , Jialei Yuan , Mingyuan Xie , Yongjin Wang , Haitao Zhao , Gangyi Zhu , Zheng Shi

引用次数: 0

Silicon photonic integrated wideband radio frequency self-interference cancellation chip for over-the-air in-band full-duplex communication

Chip Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100114

Xinxin Su , Meng Chao , Xiuyou Han , Han Liang , Wenfu Zhang , Shuanglin Fu , Weiheng Wang , Mingshan Zhao

{"title":"Silicon photonic integrated wideband radio frequency self-interference cancellation chip for over-the-air in-band full-duplex communication","authors":"Xinxin Su , Meng Chao , Xiuyou Han , Han Liang , Wenfu Zhang , Shuanglin Fu , Weiheng Wang , Mingshan Zhao","doi":"10.1016/j.chip.2024.100114","DOIUrl":"10.1016/j.chip.2024.100114","url":null,"abstract":"<div><div>Compared with the traditional frequency division duplex and time division duplex, the in-band full-duplex (IBFD) technology can double the spectrum utilization efficiency and information transmission rate. However, radio frequency (RF) self-interference remains a key issue to be resolved for the application of IBFD. The photonic RF self-interference cancellation (SIC) scheme is endowed with the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. To meet the requirements of the new generation of mobile terminals and satellite payloads, the photonic RF SIC system is desired to be miniaturized, integrated, and low power consumption. In this study, the integrated photonic RF SIC scheme was proposed and demonstrated on a silicon-based platform. By utilizing the opposite bias points of the on-chip dual Mach-Zehnder modulators, the phase inversion relationship for SIC was realized over a broad frequency band. The time delay structure combining the optically switched waveguide and compact spiral waveguide enables continuous tuning of time over a wide bandwidth. The optical amplitude adjuster provides efficient amplitude control with a large dynamic range. After being packaged with optical, direct current, and RF design, the photonic RF SIC chip exhibits the interference cancellation capabilities across L, S, C, X, Ku, K, and Ka bands. In the S and C bands, a cancellation depth exceeding 20 dB was measured across a bandwidth of 4.8 GHz. An impressive cancellation depth of over 40 dB was achieved within a bandwidth of 80 MHz at a central frequency of 2 GHz. For the application of over-the-air IBFD communication at the newly promulgated center frequency of 6 GHz for 5G communication, the cancellation depth of 21.7 dB was demonstrated in the bandwidth of 100 MHz, and the low-power signals of interest were recovered successfully.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100114"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications

Chip Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100116

Xiaoshuai An , Sizhe Gui , Yingxin Li , Zhiqin Chu , Kwai Hei Li

引用次数: 0

All-optical combinational logical units featuring fifth-order cascade

Chip Pub Date : 2024-12-01 DOI: 10.1016/j.chip.2024.100112

Haiqi Gao , Yu Shao , Yipeng Chen , Junren Wen , Yuchuan Shao , Yueguang Zhang , Weidong Shen , Chenying Yang

{"title":"All-optical combinational logical units featuring fifth-order cascade","authors":"Haiqi Gao , Yu Shao , Yipeng Chen , Junren Wen , Yuchuan Shao , Yueguang Zhang , Weidong Shen , Chenying Yang","doi":"10.1016/j.chip.2024.100112","DOIUrl":"10.1016/j.chip.2024.100112","url":null,"abstract":"<div><div>Modern computational technologies are gradually encountering significant limitations, driving a shift toward alternative paradigms such as optical computing. In this study, novel all-optical combinational logic units based on diffractive neural networks (D2NNs) were introduced, which were designed to perform high-order logical operations efficiently and swiftly with the adoption of only two modulation layers. This innovative design exhibits increased processing speed, improved energy efficiency, robust environmental stability, and high error tolerance, making it exceptionally well-suited for a broad spectrum of applications in optical computing and communications. By leveraging the transfer learning, we successfully developed a fifth-order cascaded combinational logic circuit for a practical information transmission system. Furthermore, we revealed a pioneering application of the device in optical time division multiplexing (OTDM), demonstrating its capability to manage high-speed data transfer seamlessly without the need for electronic conversion. Extensive simulations and experimental validations demonstrate the potential of the model as a foundational technology for future optical computing architectures, which paves the way toward more sustainable and efficient optical data processing platforms.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100112"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

16-channel photonic solver for optimization problems on a silicon chip

Chip Pub Date : 2024-11-08 DOI: 10.1016/j.chip.2024.100117

Jiayi Ouyang , Shengping Liu , Ziyue Yang , Wei Wang , Xue Feng , Yongzhuo Li , Yidong Huang

引用次数: 0

Q-enhancement of piezoelectric micro-oven-controlled MEMS resonators using honeycomb lattice phononic crystals 利用蜂巢晶格声波晶体增强压电微炉控 MEMS 谐振器的 Q 值

Chip Pub Date : 2024-09-19 DOI: 10.1016/j.chip.2024.100108

Yuhao Xiao , Kewen Zhu , Jinzhao Han , Sheng Liu , Guoqiang Wu

引用次数: 0

Suspended nanomembrane silicon photonic integrated circuits 悬浮纳米膜硅光子集成电路

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100104

Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng

{"title":"Suspended nanomembrane silicon photonic integrated circuits","authors":"Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng","doi":"10.1016/j.chip.2024.100104","DOIUrl":"10.1016/j.chip.2024.100104","url":null,"abstract":"<div>Leveraging the low linear and nonlinear absorption loss of silicon at mid-infrared (mid-IR) wavelengths, silicon photonic integrated circuits (PICs) have attracted significant attention for mid-IR applications including optical sensing, spectroscopy, and nonlinear optics. However, mid-IR silicon PICs typically show moderate performance compared to state-of-the-art silicon photonic devices operating in the telecommunication band. Here, we proposed and demonstrated suspended nanomembrane silicon (SNS) PICs with light-guiding within deep-subwavelength waveguide thickness for operation in the short-wavelength mid-IR region. We demonstrated key building components, namely, grating couplers, waveguide arrays, micro-resonators, etc., which exhibit excellent performances in bandwidths, back reflections, quality factors, and fabrication tolerance. Moreover, the results show that the proposed SNS PICs have high compatibility with the multi-project wafer foundry services. Our study provides an unprecedented platform for mid-IR integrated photonics and applications.</div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100104"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000224/pdfft?md5=cd27c1841a4799cf4cf48ad7ef718a52&pid=1-s2.0-S2709472324000224-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141691844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination 具有双离子植入边缘终端的垂直 GaN 肖特基势垒二极管的电气性能和可靠性分析

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100105

Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu

{"title":"Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination","authors":"Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu","doi":"10.1016/j.chip.2024.100105","DOIUrl":"10.1016/j.chip.2024.100105","url":null,"abstract":"<div>In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high Ion/Ioff ratio of approximately 109, and a low specific on-resistance of 1.93 mΩ cm2. When the ion implantation edge was terminated, the maximum VBR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm–2 and showed excellent reliability during pulse stress testing.</div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100105"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000236/pdfft?md5=39e7a0c9e23864accd3ca2de9e3d77c6&pid=1-s2.0-S2709472324000236-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141844463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy 通过非对称电极接触策略实现通道偏压控制的可重构硅纳米线晶体管

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100098

{"title":"Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy","authors":"","doi":"10.1016/j.chip.2024.100098","DOIUrl":"10.1016/j.chip.2024.100098","url":null,"abstract":"<div>Reconfigurable field-effect transistors (R-FETs) that can dynamically reconfigure the transistor polarity, from n-type to p-type channel or vice versa, represent a promising new approach to reduce the logic complexity and granularity of programmable electronics. Although R-FETs have been successfully demonstrated upon silicon nanowire (SiNW) channels, a pair of extra program gates is still needed to control the source/drain (S/D) contacts. In this work, we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact, where the FET channel polarity can be altered by changing the sign of channel bias Vds. These R-FETs were fabricated upon an orderly array of planar SiNW channels, grown via in-plane solid-liquid-solid mechanism, and contacted by Ti/Al and Pt/Au at the S/D electrodes, respectively. Remarkably, this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-type-doped (with indium dopants) or n-type-doped (phosphorus) SiNW channels, whereas the R-FET prototypes demonstrate an impressive high Ion/off ratio of > 106 and a steep subthreshold swing of 79 mV/dec. These results indicate a rather simple, compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.</div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100098"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000169/pdfft?md5=e3070abd5dfb82b3bdcb7e25f29beb8d&pid=1-s2.0-S2709472324000169-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141411691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly sensitive diamond X-ray detector array for high-temperature applications 用于高温应用的高灵敏度金刚石 X 射线探测器阵列

Chip Pub Date : 2024-09-01 DOI: 10.1016/j.chip.2024.100106

Wenjie Dou , Chaonan Lin , Wei Fan , Xun Yang , Chao Fang , Huaping Zang , Shaoyi Wang , Congxu Zhu , Zhi Zheng , Weimin Zhou , Chongxin Shan

{"title":"Highly sensitive diamond X-ray detector array for high-temperature applications","authors":"Wenjie Dou , Chaonan Lin , Wei Fan , Xun Yang , Chao Fang , Huaping Zang , Shaoyi Wang , Congxu Zhu , Zhi Zheng , Weimin Zhou , Chongxin Shan","doi":"10.1016/j.chip.2024.100106","DOIUrl":"10.1016/j.chip.2024.100106","url":null,"abstract":"<div><div>Diamond is a highly suitable material for X-ray detectors that can function effectively in harsh environments due to its unique properties such as ultrawide bandgap, high radiation resistance, excellent carrier mobility as well as remarkable chemical and thermal stability. However, the sensitivity of diamond X-ray detectors needs further improvement due to the relatively low X-ray absorption efficiency of diamond, and the exploration of single-crystal diamond array imaging still remains unexplored. In the current work, a 10 × 10 X-ray photodetector array was constructed from single-crystal diamond. To improve the sensitivity of the diamond X-ray detector, an asymmetric sandwich electrode structure was utilized. Additionally, trenches were created through laser cutting to prevent crosstalk between adjacent pixels. The diamond X-ray detector array exhibits exceptional performance, including a low detection limit of 4.9 nGy s−1, a sensitivity of 14.3 mC Gy−1 cm−2, and a light-dark current ratio of 18,312, which are among the most favorable values ever reported for diamond X-ray detectors. Furthermore, these diamond X-ray detectors can operate at high temperatures up to 450 °C, making them suitable for development in harsh environments.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100106"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000248/pdfft?md5=641348a92d64c73eaa83ace8518de946&pid=1-s2.0-S2709472324000248-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0