Chip Pub Date : 2025-06-01 Epub Date: 2025-01-30 DOI: 10.1016/j.chip.2025.100131

Yitong Wang , Fangpei Li , Wenbo Peng , Yongning He

{"title":"Advances in piezotronics and piezo-phototronics of two-dimensional semiconductor materials","authors":"Yitong Wang , Fangpei Li , Wenbo Peng , Yongning He","doi":"10.1016/j.chip.2025.100131","DOIUrl":"10.1016/j.chip.2025.100131","url":null,"abstract":"<div><div>High-performance electronics and optoelectronics play vital roles in modern society, as they are the fundamental building blocks of functional devices and systems. Two-dimensional semiconductor materials (2D-SCMs) are potential candidates for high-performance electronics and optoelectronics due to their excellent physical, chemical, electrical, and photonic properties. Owing to their special crystalline structure, they also present unique piezoelectricity, which opens a new door to the innovative fields of piezotronics and piezo-phototronics. Piezotronics and piezo-phototronics utilize the piezoelectric polarization charges produced when the 2D-SCMs undergo externally applied strains/stresses to modulate the performance of 2D-SCMs-based electronics and optoelectronics. In this review, firstly, the growth methods and piezoelectric properties of 2D-SCMs are stated, and the mechanisms of piezotronics and piezo-phototronics are also introduced. Afterwards, the recent progress of piezotronics and piezo-phototronics in high-performance 2D-SMCs-based electronics and optoelectronics are systematically reviewed. In addition, the functional devices and systems based on the piezotronics and piezo-phototronics in 2D-SMCs have been summarized. Finally, the research progresses are summarized, and future perspectives are proposed.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 2","pages":"Article 100131"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric devices for artificial intelligence chips 用于人工智能芯片的铁电器件

Chip Pub Date : 2025-06-01 Epub Date: 2025-01-25 DOI: 10.1016/j.chip.2025.100129

Jinshun Bi , Muhammad Faizan , Xuefei Liu , Yue Ma , Xu Wang , Viktor Stempitsky

{"title":"Ferroelectric devices for artificial intelligence chips","authors":"Jinshun Bi , Muhammad Faizan , Xuefei Liu , Yue Ma , Xu Wang , Viktor Stempitsky","doi":"10.1016/j.chip.2025.100129","DOIUrl":"10.1016/j.chip.2025.100129","url":null,"abstract":"<div><div>The identification of ferroelectricity in oxides such as hafnium oxide, which are compatible with the contemporary semiconductor fabrication techniques, has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics. In a transistor structure, ferroelectric devices play the role of connecting a ferroelectric material to a semiconductor, which combines memory and logic operations at the level of a single device, thus meeting some of the most essential hardware requirements for new paradigms for artificial intelligence (A.I) chips. In this review, we addressed the issues associated with high-volume fabrication at advanced technology nodes (<span><math><mo>≤</mo><mn>10</mn><mspace></mspace><mi>nm</mi><mo>)</mo></math></span> at the material and device level. Moreover, we also reviewed the advancement of A.I chips such as neuro-inspired computer chips. For neuro-inspired A.I chips based on nonvolatile memory, four important metrics are suggested for benchmarking: computing density, energy efficiency, learning capability, and computing accuracy. It is inferred that ferroelectric devices can be a major hardware element in the design of future A.I chips, which will leads to an innovative approach to electronics that is termed ferroelectronics.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 2","pages":"Article 100129"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143898682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Zero-power self-aware microsystem platform enabled by passive acoustic switch 无源声开关实现零功耗自感知微系统平台

Chip Pub Date : 2025-06-01 Epub Date: 2025-01-27 DOI: 10.1016/j.chip.2025.100130

Deng Yang , Xiaoqin Liu , Lingyun Zhang , Guozhe Xuan , Xiangzheng Sun , Jiahao Zhao

{"title":"Zero-power self-aware microsystem platform enabled by passive acoustic switch","authors":"Deng Yang , Xiaoqin Liu , Lingyun Zhang , Guozhe Xuan , Xiangzheng Sun , Jiahao Zhao","doi":"10.1016/j.chip.2025.100130","DOIUrl":"10.1016/j.chip.2025.100130","url":null,"abstract":"<div><div>Long-term continuous monitoring is essential for the Internet of Things (IoT), with efficient power use and sustainable energy supply as core challenges. This study presents a MEMS-based self-holding acoustic switch designed for uninterrupted monitoring of specific acoustic signals with zero power consumption. Microelectromechanical systems (MEMS) refer to miniaturized devices that integrate mechanical and electrical components on a single microchip. A mathematical model is developed to analyze the switch's acoustic frequency response. Simulations and experiments demonstrate its acoustic-driven properties. Acoustic switches with different structural parameters are designed, achieving resonant frequencies ranging from 192 Hz to 862 Hz. Electrostatic voltages are applied to enable self-holding functionality, and the acoustic switch exhibits a contact resistance as low as 29.3 Ω. The acoustic switch successfully performs various functions, including acoustic sensing, frequency identification, on–off control, and self-holding, all without drawing power from an external power supply. By integrating this acoustic switch, a zero-power self-aware microsystem platform is realized, allowing zero-power sleep states without closed-loop circuits while remaining responsive to target acoustic signals. This technology effectively supports long-term, large-scale deployment of unattended IoT terminals.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 2","pages":"Article 100130"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143937229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

16-channel photonic solver for optimization problems on a silicon chip 硅芯片上优化问题的16通道光子求解器

Chip Pub Date : 2025-03-01 Epub Date: 2024-11-08 DOI: 10.1016/j.chip.2024.100117

Jiayi Ouyang , Shengping Liu , Ziyue Yang , Wei Wang , Xue Feng , Yongzhuo Li , Yidong Huang

引用次数: 0

Angle-insensitive dual bound states in the continuum on germanium metasurface 锗超表面连续介质中角不敏感的双束缚态

Chip Pub Date : 2025-03-01 Epub Date: 2024-12-27 DOI: 10.1016/j.chip.2024.100121

Yiqing Liu , Jinwen Lv , Ye Fan , Meixue Zong , Shubin Zhang , Zhengji Xu

引用次数: 0

Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing 微波退火后端兼容的Hf0.5Zr0.5O2铁电器件

Chip Pub Date : 2025-03-01 Epub Date: 2024-12-20 DOI: 10.1016/j.chip.2024.100120

Yinchi Liu , Hao Zhang , Jining Yang , Dmitriy Anatolyevich Golosov , Xiaohan Wu , Chenjie Gu , Shijin Ding , Wenjun Liu

{"title":"Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing","authors":"Yinchi Liu , Hao Zhang , Jining Yang , Dmitriy Anatolyevich Golosov , Xiaohan Wu , Chenjie Gu , Shijin Ding , Wenjun Liu","doi":"10.1016/j.chip.2024.100120","DOIUrl":"10.1016/j.chip.2024.100120","url":null,"abstract":"<div><div>In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2<em>P</em>r) of 55.4 μC/cm<sup>2</sup>, a higher maximum dielectric constant, and nearly wakeup-free were realized by modulating the power of the microwave. It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules, which facilitates the crystallization at low temperature. Furthermore, an amorphous indium gallium zinc oxide ferroelectric field-effect transistor treated with microwave annealing was fabricated, and a competitive memory window of 1.5 V was substantially achieved. These findings offer insights into the integration of HfO<sub>2</sub> ferroelectric materials in non-volatile memory devices compatible with back-end-of-line (BEOL) in the future.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100120"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143429649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrigendum to “Wang, Z. et al. Van der Waals ferroelectric transistors: the all-round artificial synapses for high-precision neuromorphic computing” Chip 2 (2023) 100044 范德华铁电晶体管：用于高精度神经形态计算的全方位人工突触 "的更正，Chip 2 (2023) 100044

Chip Pub Date : 2025-03-01 Epub Date: 2024-07-04 DOI: 10.1016/j.chip.2024.100100

Zhongwang Wang , Xuefan Zhou , Xiaochi Liu , Aocheng Qiu , Caifang Gao , Yahua Yuan , Yumei Jing , Dou Zhang , Wenwu Li , Hang Luo , Junhao Chu , Jian Sun

引用次数: 0

Molecular engineering enables high-performance hybrid perovskite photodetector 分子工程使高性能混合钙钛矿光电探测器成为可能

Chip Pub Date : 2025-03-01 Epub Date: 2024-12-30 DOI: 10.1016/j.chip.2024.100125

Peiding Liu , Xing Zhang , Bolei Zhang , Yong Wang , Wanbiao Hu , Feng Qiu

{"title":"Molecular engineering enables high-performance hybrid perovskite photodetector","authors":"Peiding Liu , Xing Zhang , Bolei Zhang , Yong Wang , Wanbiao Hu , Feng Qiu","doi":"10.1016/j.chip.2024.100125","DOIUrl":"10.1016/j.chip.2024.100125","url":null,"abstract":"<div><div>Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI<sub>3</sub> surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb<sup>2+</sup> defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10<sup>−11</sup> A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 10<sup>12</sup> Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100125"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterizing the spatial potential of an ion trap chip 表征离子阱芯片的空间电位

Chip Pub Date : 2025-03-01 Epub Date: 2025-01-01 DOI: 10.1016/j.chip.2024.100126

Qingqing Qin , Ting Chen , Xinfang Zhang , Baoquan Ou , Jie Zhang , Chunwang Wu , Yi Xie , Wei Wu , Pingxing Chen

{"title":"Characterizing the spatial potential of an ion trap chip","authors":"Qingqing Qin , Ting Chen , Xinfang Zhang , Baoquan Ou , Jie Zhang , Chunwang Wu , Yi Xie , Wei Wu , Pingxing Chen","doi":"10.1016/j.chip.2024.100126","DOIUrl":"10.1016/j.chip.2024.100126","url":null,"abstract":"<div><div>The accurate characterization of the spatial electric field generated by electrodes in a surface electrode trap is of paramount importance. In this pursuit, we have identified a simple yet highly precise parametric expression to describe the spatial field of a rectangular-shaped electrode. Leveraging this expression, we introduced an optimization method designed to accurately characterize the axial electric field intensity produced by the powered electrode and the stray field. Distinct from the existing methods, our approach integrates a diverse array of experimental data, including the equilibrium positions of ions in a linear string, the equilibrium positions of single trapped ions, and trap frequencies, to effectively reduce the systematic errors. This approach provides considerable flexibility in voltage settings for data acquisition, making it especially advantageous for surface electrode traps where the trapping height of ion probes may vary with casual voltage settings. In our experimental demonstration, we successfully minimized the discrepancy between observations and model predictions to a remarkable degree. The relative errors of secular frequencies were contained within ±0.5%, and the positional error of ions was constrained to less than 1.2 μm, which surpasses the performance of current methodologies.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100126"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143636751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Coexistence of unipolar and bipolar resistive switching in optical synaptic memristors and neuromorphic computing 光学突触记忆晶体管和神经形态计算中的单极和双极电阻开关共存

Chip Pub Date : 2025-03-01 Epub Date: 2024-12-27 DOI: 10.1016/j.chip.2024.100122

Dongsheng Cui , Mengjiao Pei , Zhenhua Lin , Yifei Wang , Hong Zhang , Xiangxiang Gao , Haidong Yuan , Yun Li , Jincheng Zhang , Yue Hao , Jingjing Chang

{"title":"Coexistence of unipolar and bipolar resistive switching in optical synaptic memristors and neuromorphic computing","authors":"Dongsheng Cui , Mengjiao Pei , Zhenhua Lin , Yifei Wang , Hong Zhang , Xiangxiang Gao , Haidong Yuan , Yun Li , Jincheng Zhang , Yue Hao , Jingjing Chang","doi":"10.1016/j.chip.2024.100122","DOIUrl":"10.1016/j.chip.2024.100122","url":null,"abstract":"<div><div>The human brain possesses a highly developed capability for sensing-memory-computing, and the integration of hardware with brain-like functions represents a novel approach to overcoming the von Neumann bottleneck. In this study, Ga<sub>2</sub>O<sub>3</sub> photoelectric memristors were successfully fabricated, enabling efficient visual information processing and complex recognition through the integration of optoelectronic synapses with digital storage. The memristors with a Pt/Ga<sub>2</sub>O<sub>3</sub>/Pt sandwich structure exhibit the coexistence of unipolar resistive switching (URS) and bipolar resistive switching (BRS), coupled with an impressive switching ratio and stable retention characteristics. The device demonstrates robust photo-responsive properties to ultraviolet (UV) light, which enables the realization of an array of 16 photoconductor types through the manipulation of four-timeframe pulse sequences. Exposure of the device to UV light elicits stable synaptic behaviors, including paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), as well as learning-forgetting-relearning behavior. Moreover, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing capabilities as a neuromorphic vision sensor (NVS). The integration of light pulse potentiation with electrical pulse depression yields a remarkable 100 conductances with superior linearity. This advanced functionality is further validated by the ability of the device to facilitate the recognition of 85.3% of handwritten digits by artificial neural networks (ANNs), which underscores the significant potential of artificial synapses in mimicking biological neural.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100122"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143464590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chip最新文献