Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing

Chip Pub Date : 2024-12-20 DOI:10.1016/j.chip.2024.100120
Yinchi Liu , Hao Zhang , Jining Yang , Dmitriy Anatolyevich Golosov , Xiaohan Wu , Chenjie Gu , Shijin Ding , Wenjun Liu
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引用次数: 0

Abstract

In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf0.5Zr0.5O2 (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2Pr) of 55.4 μC/cm2, a higher maximum dielectric constant, and nearly wakeup-free were realized by modulating the power of the microwave. It is believed that the increasing loss factor of zirconia with rising temperature allows more energy to be extracted from the microwave and transferred to the ferroelectric HZO molecules, which facilitates the crystallization at low temperature. Furthermore, an amorphous indium gallium zinc oxide ferroelectric field-effect transistor treated with microwave annealing was fabricated, and a competitive memory window of 1.5 V was substantially achieved. These findings offer insights into the integration of HfO2 ferroelectric materials in non-volatile memory devices compatible with back-end-of-line (BEOL) in the future.
微波退火后端兼容的Hf0.5Zr0.5O2铁电器件
在这项工作中,我们展示了在300°C下采用微波退火(MWA)对Hf0.5Zr0.5O2 (HZO)薄膜进行结晶的极低退火处理。与传统的退火方法相比,通过调制微波功率,实现了55.4 μC/cm2的双残余极化(2Pr)增强,最大介电常数提高,几乎无唤醒。认为随着温度的升高,氧化锆的损耗因子增大,可以从微波中提取更多的能量并转移到铁电HZO分子中,有利于低温结晶。在此基础上,制备了微波退火处理的非晶铟镓锌氧化铁电场效应晶体管,获得了1.5 V的竞争性记忆窗口。这些发现为HfO2铁电材料在未来与后端线(BEOL)兼容的非易失性存储器件中的集成提供了见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
2.80
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