Chip最新文献

{"title":"Experimental demonstration of SnO₂ nanofiber-based memristors and their data-driven modeling for nanoelectronic applications","authors":"Soumi Saha ,&nbsp;Madadi Chetan Kodand Reddy ,&nbsp;Tati Sai Nikhil ,&nbsp;Kaushik Burugupally ,&nbsp;Sanghamitra DebRoy ,&nbsp;Akshay Salimath ,&nbsp;Venkat Mattela ,&nbsp;Surya Shankar Dan ,&nbsp;Parikshit Sahatiya","doi":"10.1016/j.chip.2023.100075","DOIUrl":"10.1016/j.chip.2023.100075","url":null,"abstract":"<div><p>This paper demonstrated the fabrication, characterization, data-driven modeling, and practical application of a 1D SnO₂ nanofiber-based memristor, in which a 1D SnO₂ active layer was sandwiched between silver (Ag) and aluminum (Al) electrodes. This device yielded a very high <em>R</em>_OFF : <em>R</em>_ON of ∼10⁴ (<em>I</em>_ON : <em>I</em>_OFF of ∼10⁵) with an excellent activation slope of 10 mV/dec, low set voltage of <em>V</em>_SET ∼ 1.14 V and good repeatability. This paper physically explained the conduction mechanism in the layered SnO₂ nanofiber-based memristor. The conductive network was composed of nanofibers that play a vital role in the memristive action, since more conductive paths could facilitate the hopping of electron carriers. Energy band structures experimentally extracted with the adoption of ultraviolet photoelectron spectroscopy strongly support the claims reported in this paper. An machine learning (ML)–assisted, data-driven model of the fabricated memristor was also developed employing different popular algorithms such as polynomial regression, support vector regression, k nearest neighbors, and artificial neural network (<span>ANN</span>) to model the data of the fabricated device. We have proposed two types of ANN models (type I and type II) algorithms, illustrated with a detailed flowchart, to model the fabricated memristor. Benchmarking with standard ML techniques shows that the type II ANN algorithm provides the best mean absolute percentage error of 0.0175 with a 98% <em>R</em>² score. The proposed data-driven model was further validated with the characterization results of similar new memristors fabricated adopting the same fabrication recipe, which gave satisfactory predictions. Lastly, the ANN type II model was applied to design and implement simple AND &amp; OR logic functionalities adopting the fabricated memristors with expected, near-ideal characteristics.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100075"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000382/pdfft?md5=a3b001df8e3928048e131f6f43cfc09c&pid=1-s2.0-S2709472323000382-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138557191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Traveling-wave parametric amplifier–induced qubit dephasing: analysis and mitigation","authors":"Yingshan Zhang ,&nbsp;Huikai Xu ,&nbsp;Yu Song ,&nbsp;Yuqun Xu ,&nbsp;Shuang Yang ,&nbsp;Ziyue Hua ,&nbsp;Shoukuan Zhao ,&nbsp;Weiyang Liu ,&nbsp;Guangming Xue ,&nbsp;Yirong Jin ,&nbsp;Haifeng Yu","doi":"10.1016/j.chip.2023.100067","DOIUrl":"10.1016/j.chip.2023.100067","url":null,"abstract":"<div><p>The mitigation of dephasing poses a significant challenge to improving the performance of error-prone superconducting quantum computing systems. Here, the dephasing of a transmon qubit in a dispersive readout regime was investigated by adopting a Josephson traveling-wave parametric amplifier as the preamplifier. Our findings reveal that the potent pump leakage from the preamplifier may lead to severe dephasing. This could be attributed to a mixture of measurement-induced dephasing, ac Stark effect, and heating. It is showed that pulse-mode readout is a promising measurement scheme to mitigate qubit dephasing while minimizing the need for bulky circulators. Our work provides key insights into mitigating decoherence from microwave-pumped preamplifiers, which will be critical for advancing large-scale quantum computers.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100067"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000308/pdfft?md5=fc3625dc271609ec6298db06b0c60167&pid=1-s2.0-S2709472323000308-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134994753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deterministic relation between thermal-phonon dressings and a non-Hermitian multi-Fano interferences router in ion-doped microcrystals","authors":"Huanrong Fan ,&nbsp;Faizan Raza ,&nbsp;Anas Mujahid ,&nbsp;Peng Li ,&nbsp;Yafen Wang ,&nbsp;Haitian Tang ,&nbsp;Muhammad Usman ,&nbsp;Bo Li ,&nbsp;Changbiao Li ,&nbsp;Yanpeng Zhang","doi":"10.1016/j.chip.2023.100077","DOIUrl":"10.1016/j.chip.2023.100077","url":null,"abstract":"<div><p>The multi-Fano interference, which is obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu³⁺ : BiPO₄ (7 : 1, 6 : 1, 1 : 1, and 0.5 : 1) and Eu³⁺ : NaYF₄ (1 : 1/4) crystals, were reported in this work. Multidressed spontaneous four-wave mixing and multidressed fluorescence (multiorder) were adopted to optimize the strong photon–phonon nested dressing effect, which results in more obvious multi-Fano interference. Firstly, the multi-Fano is produced through interference in continuous and multibound states. Secondly, five multi-Fano dips are originated from the nested five dressings (one photon and four phonons) under symmetrical splitting of ⁷F₁ energy level. It is found that the pure H-phase (0.5 : 1) sample exhibits the strongest photon–phonon dressed effect (five Fano dips). Further, high-order non-Hermitian exceptional points in multi-Fano interference were investigated by adjusting the ratio of Rabi frequency to dephase rate through nested photon and phonon dressing. The experimental results are validated by theoretical simulations, which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences (multichannel) router.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100077"},"PeriodicalIF":0.0,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000400/pdfft?md5=b2c658c77e79f727b005a7f997cd812c&pid=1-s2.0-S2709472323000400-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138557190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensing with extended gate negative capacitance ferroelectric field-effect transistors","authors":"Honglei Xue ,&nbsp;Yue Peng ,&nbsp;Qiushi Jing ,&nbsp;Jiuren Zhou ,&nbsp;Genquan Han ,&nbsp;Wangyang Fu","doi":"10.1016/j.chip.2023.100074","DOIUrl":"10.1016/j.chip.2023.100074","url":null,"abstract":"<div><p>With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive field-effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-efficient ISFET was proposed based on a metal–ferroelectric–insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100074"},"PeriodicalIF":0.0,"publicationDate":"2023-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000370/pdfft?md5=93e20422bfd5b4781204092c8a11d70d&pid=1-s2.0-S2709472323000370-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138566313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wafer-scale engineering of two-dimensional transition metal dichalcogenides","authors":"Xiang Lan ,&nbsp;Yingliang Cheng ,&nbsp;Xiangdong Yang ,&nbsp;Zhengwei Zhang","doi":"10.1016/j.chip.2023.100057","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100057","url":null,"abstract":"<div><p>Moore's Law has been the driving force behind the semiconductor industry for several decades, but as silicon-based transistors approach their physical limits, researchers are searching for new materials to sustain this exponential growth. Two-dimensional transition metal dichalcogenides (TMDs), with their atomically thin structure and enticing physical properties, have emerged as the most promising candidates for downsizing and improving device integration. Emboldened by the direction of achieving large-area and high-quality TMDs growth, wafer-scale TMDs growth strategies have been continuously developed, suggesting that TMDs are poised to become a new platform for next-generation electronic devices. In this review, advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed. In addition, the performance in electronic devices was also discussed, providing an outlook on the opportunities and challenges that lie ahead in their development.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100057"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phonon lasing enhanced mass sensor with zeptogram resolution under ambient conditions","authors":"Fei Pan ,&nbsp;Kaiyu Cui ,&nbsp;Yidong Huang ,&nbsp;Ziming Chen ,&nbsp;Ning Wu ,&nbsp;Guoren Bai ,&nbsp;Zhilei Huang ,&nbsp;Xue Feng ,&nbsp;Fang Liu ,&nbsp;Wei Zhang","doi":"10.1016/j.chip.2023.100050","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100050","url":null,"abstract":"<div><p>High-sensitivity mass sensors under ambient conditions are essential in various fields such as biological research, gas sensing and environmental monitoring. In the current work, a phonon lasing enhanced mass sensor was proposed based on an optomechanical crystal cavity under ambient conditions. The phonon lasing was harnessed to achieve ultra-high resolution since it resulted in an extremely narrow mechanical linewidth (less than 10 kHz). Masses with different weights were deposited on the cavity, it is predicted that the maximum resolution for mass sensing can be 65 ± 19 zg, which approaches the mass order of a protein and an oligonucleotide. This implies the potential application of the proposed method in the biomedical fields such as oligonucleotide drug delivery area and the Human Proteome Project.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100050"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Refrigeration technologies of cryogenic chips","authors":"Haonan Chang ,&nbsp;Jun Zhang","doi":"10.1016/j.chip.2023.100054","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100054","url":null,"abstract":"<div><p>Cryogenic electronics refers to the devices and circuits operated at cryogenic temperatures (below 123.15 K), which are made from a variety of materials such as insulators, conductors, semiconductors, superconductors and topological materials. The cryogenic electronics are endowed with some unique advantages that cannot be realized in room temperature, including high computing speed, high power performance and so on. Choosing the appropriate refrigeration technology is critical for achieving the best performance of the cryogenic electronics. In this review, the cryogenic technology was divided into non-optical refrigeration and optical refrigeration, where non-optical refrigeration technologies are relatively conventional refrigeration technologies, while optical refrigeration is an emerging research field for the cooling of the chips. In the current work, the fundamental principles, applications and development prospects of the non-optical refrigeration was introduced, also the research history, fundamental principles, existing problems and application prospects of the optical refrigeration was thoroughly reviewed.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100054"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On large-signal modeling of GaN HEMTs: past, development and future","authors":"Haorui Luo ,&nbsp;Wenrui Hu ,&nbsp;Yongxin Guo","doi":"10.1016/j.chip.2023.100052","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100052","url":null,"abstract":"<div><p><strong>In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile communications, object detection and consumer electronics, etc. As a critical intermediary between GaN HEMT devices and circuit-level applications, GaN HEMT large-signal models play a pivotal role in the design, application and development of GaN HEMT devices and circuits. This review provides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades. Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model was offered, including large-signal measurement setups, classical formulation methods, model classification and non-ideal effects, etc. In order to better serve follow-up researches, this review also explored potential future directions for the development of GaN HEMT large-signal modeling</strong>.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100052"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Circuits and devices for standalone large-scale integration (LSI) chips and Internet of Things (IoT) applications: a review","authors":"Takaya Sugiura ,&nbsp;Kenta Yamamura ,&nbsp;Yuta Watanabe ,&nbsp;Shiun Yamakiri ,&nbsp;Nobuhiko Nakano","doi":"10.1016/j.chip.2023.100048","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100048","url":null,"abstract":"<div><p>In recent years, Internet of Things (IoT) has become more and more important owing to the rapid expansion of the number of computing devices and data sizes. The evolution of IoT requires low-power and self-operating devices to expand the coverage area of computing resources. The main components of IoT are the large-scale integration (LSI) chips, which take the function of implementing the energy harvesters, control units and applications. They exhibit different physics or phenomena, making it difficult to understand and design the entire system. The current work reviews the various methods for IoT applications by CMOS LSI chips, from the power components by energy harvesting to realistic applications with future outlooks.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100048"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Frequency-tunable microwave quantum light source based on superconducting quantum circuits","authors":"Yan Li ,&nbsp;Zhiling Wang ,&nbsp;Zenghui Bao ,&nbsp;Yukai Wu ,&nbsp;Jiahui Wang ,&nbsp;Jize Yang ,&nbsp;Haonan Xiong ,&nbsp;Yipu Song ,&nbsp;Hongyi Zhang ,&nbsp;Luming Duan","doi":"10.1016/j.chip.2023.100063","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100063","url":null,"abstract":"<div><p>A non-classical light source is essential for implementing a wide range of quantum information processing protocols, including quantum computing, networking, communication and metrology. In the microwave regime, propagating photonic qubits, which transfer quantum information between multiple superconducting quantum chips, serve as building blocks for large-scale quantum computers. In this context, spectral control of propagating single photons is crucial for interfacing different quantum nodes with varied frequencies and bandwidths. Here a deterministic microwave quantum light source was demonstrated based on superconducting quantum circuits that can generate propagating single photons, time-bin encoded photonic qubits and qudits. In particular, the frequency of the emitted photons can be tuned in situ as large as 200 MHz. Even though the internal quantum efficiency of the light source is sensitive to the working frequency, it is shown that the fidelity of the propagating photonic qubit can be well preserved with the time-bin encoding scheme. This work thus demonstrates a versatile approach to realizing a practical quantum light source for future distributed quantum computing.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100063"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}