Chip最新文献

{"title":"The on-chip thermoelectric cooler: advances, applications and challenges","authors":"Chengjun Li,&nbsp;Yubo Luo,&nbsp;Wang Li,&nbsp;Boyu Yang,&nbsp;Chengwei Sun,&nbsp;Wenyuan Ma,&nbsp;Zheng Ma,&nbsp;Yingchao Wei,&nbsp;Xin Li,&nbsp;Junyou Yang","doi":"10.1016/j.chip.2024.100096","DOIUrl":"10.1016/j.chip.2024.100096","url":null,"abstract":"<div><p>With the development of 5G technology and increasing chip integration, traditional active cooling methods struggle to meet the growing thermal demands of chips. Thermoelectric coolers (TECs) have garnered great attention due to their rapid response, significant cooling differentials, strong compatibility, high stability and controllable device dimensions. In this review, starting from the fundamental principles of thermoelectric cooling and device design, high-performance thermoelectric cooling materials are summarized, and the progress of advanced on-chip TECs is comprehensively reviewed. Finally, the paper outlines the challenges and opportunities in TEC design, performance and applications, laying great emphasis on the critical role of thermoelectric cooling in addressing the evolving thermal management requirements in the era of emerging chip technologies.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 2","pages":"Article 100096"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000145/pdfft?md5=5df7bff3a72f84dd9ee90367220d271d&pid=1-s2.0-S2709472324000145-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140792827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Large-area growth of synaptic heterostructure arrays for integrated neuromorphic visual perception chips","authors":"Yao Deng ,&nbsp;Shenghong Liu ,&nbsp;Manshi Li ,&nbsp;Na Zhang ,&nbsp;Yiming Feng ,&nbsp;Junbo Han ,&nbsp;Yury Kapitonov ,&nbsp;Yuan Li ,&nbsp;Tianyou Zhai","doi":"10.1016/j.chip.2024.100088","DOIUrl":"10.1016/j.chip.2024.100088","url":null,"abstract":"<div><p>Two-dimensional metal chalcogenides have garnered significant attention as promising candidates for novel neuromorphic synaptic devices due to their exceptional structural and optoelectronic properties. However, achieving large-scale integration and practical applications of synaptic chips has proven to be challenging due to significant hurdles in materials preparation and the absence of effective nanofabrication techniques. In a recent breakthrough, we introduced a revolutionary allopatric defect-modulated Fe₇S₈@MoS₂ synaptic heterostructure, which demonstrated remarkable optoelectronic synaptic response capabilities. Building upon this achievement, our current study takes a step further by presenting a sulfurization-seeding synergetic growth strategy, enabling the large-scale and arrayed preparation of Fe₇S₈@MoS₂ heterostructures. Moreover, a three-dimensional vertical integration technique was developed for the fabrication of arrayed optoelectronic synaptic chips. Notably, we have successfully simulated the visual persistence function of the human eye with the adoption of the arrayed chip. Our synaptic devices exhibit a remarkable ability to replicate the preprocessing functions of the human visual system, resulting in significantly improved noise reduction and image recognition efficiency. This study might mark an important milestone in advancing the field of optoelectronic synaptic devices, which significantly prompts the development of mature integrated visual perception chips.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 2","pages":"Article 100088"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000066/pdfft?md5=3c43e3097235258d0932a5944fcc9d1f&pid=1-s2.0-S2709472324000066-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140406791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon cross-coupled gated tunneling diodes","authors":"Zhenyun Tang ,&nbsp;Zhe Wang ,&nbsp;Zhigang Song ,&nbsp;Wanhua Zheng","doi":"10.1016/j.chip.2024.100094","DOIUrl":"10.1016/j.chip.2024.100094","url":null,"abstract":"<div><p><strong>Tunneling-based static</strong> <strong>random-access</strong> <strong>memory (SRAM) devices ha</strong><strong>ve</strong> <strong>been developed to fulfill the demands of high density and low power,</strong> <strong>and</strong> <strong>the performance of SRAMs</strong> <strong>has also been greatly promoted</strong><strong>.</strong> <strong>However, for a long time, there has not been a silicon based tunneling device with both high peak valley current ratio (PVCR) and practicality, which remains a gap to be filled</strong><strong>.</strong> <strong>Based on the existing work, the current manuscript proposed the concept of a new silicon-based tunneling device, i.e., the silicon cross-coupled gated tunneling diode (Si XTD), which is quite simple in structure and almost completely compatible with mainstream technology</strong><strong>. With</strong> <strong>t</strong>echnology computer aided design (<strong>TCAD</strong><strong>)</strong> <strong>simulations, it has been validated that this type of device</strong> <strong>not only exhibit</strong><strong>s</strong> <strong>significant</strong> <strong>negative-differential-resistance</strong> <strong>(NDR) behavior with PVCRs up to 10</strong>^{<strong>6</strong>}<strong>, but also possess</strong><strong>es</strong> <strong>reasonable process margins. Moreover, SPICE simulation</strong> <strong>showed</strong> <strong>the great potential of such devices to achieve</strong> <strong>ultralow-power</strong> <strong>tunneling-based SRAMs with standby power down to 10</strong>^{<strong>−12</strong>} <strong>W.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 2","pages":"Article 100094"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000121/pdfft?md5=ea45c5d42cfca2586f9abf13cbf43f07&pid=1-s2.0-S2709472324000121-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140782378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-wide dual-band Rydberg atomic receiver based on space division multiplexing radio-frequency chip modules","authors":"Li-Hua Zhang ,&nbsp;Bang Liu ,&nbsp;Zong-Kai Liu ,&nbsp;Zheng-Yuan Zhang ,&nbsp;Shi-Yao Shao ,&nbsp;Qi-Feng Wang ,&nbsp;Yu Ma ,&nbsp;Tian-Yu Han ,&nbsp;Guang-Can Guo ,&nbsp;Dong-Sheng Ding ,&nbsp;Bao-Sen Shi","doi":"10.1016/j.chip.2024.100089","DOIUrl":"10.1016/j.chip.2024.100089","url":null,"abstract":"<div><p><strong>Detecting microwave signals over a wide frequency range</strong> <strong>is endowed with</strong> <strong>numerous advantages as it enables simultaneous transmission of a large amount of information</strong> <strong>and access to more spectrum resources. This capability is crucial for applications such as microwave communication, remote sensing</strong> <strong>and radar. However, conventional microwave receiving systems are limited by amplifiers and</strong> <strong>band-pass</strong> <strong>filters that can only operate efficiently in a specific frequency range. Typically, these systems can only process signals within a</strong> <strong>three-fold</strong> <strong>frequency range, which limits the data transfer bandwidth of the microwave communication systems. Developing novel</strong> <strong>atom-integrated</strong> <strong>microwave sensors, for example, radio</strong><strong>-</strong><strong>frequency (RF)</strong> <strong>chip</strong><strong>–</strong><strong>coupled Rydberg atomic receiver, provides opportunities for a large working bandwidth of microwave sensing at the atomic level.</strong> <strong>In the current work</strong><strong>, an</strong> <strong>ultra-wide</strong> <strong>dual-band RF sensing scheme</strong> <strong>was</strong> <strong>demonstrated by</strong> <strong>space-division</strong> <strong>multiplexing two</strong> <strong>RF-chip-integrated</strong> <strong>atomic receiver modules. The system can simultaneously receive</strong> <strong>dual-band</strong> <strong>microwave signals that span a frequency range exceeding 6 octaves (300 MHz and 24 GHz). This work paves the way for</strong> <strong>multi-band</strong> <strong>microwave reception applications within an</strong> <strong>ultra-wide</strong> <strong>range by</strong> <strong>RF-chip-integrated</strong> <strong>Rydberg atomic sensor.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 2","pages":"Article 100089"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000078/pdfft?md5=6b62de975bdc50202a62cd77b359ecd7&pid=1-s2.0-S2709472324000078-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140609057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carbon-based memristors for resistive random access memory and neuromorphic applications","authors":"Fan Yang ,&nbsp;Zhaorui Liu ,&nbsp;Xumin Ding ,&nbsp;Yang Li ,&nbsp;Cong Wang ,&nbsp;Guozhen Shen","doi":"10.1016/j.chip.2024.100086","DOIUrl":"10.1016/j.chip.2024.100086","url":null,"abstract":"<div><p>As a typical representative of nanomaterials, carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties, multi-dimensionality, multi-hybridization methods, and excellent electronic properties. Especially in the recent years, memristors based on carbon nanomaterials have flourished in the field of building non-volatile memory devices and neuromorphic applications. In the current work, the preparation methods and structural characteristics of carbon nanomaterials of different dimensions were systematically reviewed. Afterwards, in depth discussion on the structural characteristics and working mechanism of memristors based on carbon nanomaterials of different dimensions was conducted. Finally, the potential applications of carbon-based memristors in logic operations, neural network construction, artificial vision systems, artificial tactile systems, and multimodal perception systems were also introduced. It is believed that this paper will provide guidance for the future development of high-quality information storage, high-performance neuromorphic applications, and high-sensitivity bionic sensing based on carbon-based memristors.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 2","pages":"Article 100086"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000042/pdfft?md5=01be163da3ae9d5a07af2d3956630a3a&pid=1-s2.0-S2709472324000042-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139678113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Memristor-based spiking neural networks: cooperative development of neural network architecture/algorithms and memristors","authors":"Huihui Peng,&nbsp;Lin Gan,&nbsp;Xin Guo","doi":"10.1016/j.chip.2024.100093","DOIUrl":"10.1016/j.chip.2024.100093","url":null,"abstract":"<div><p>Inspired by the structure and principles of the human brain, spike neural networks (SNNs) appear as the latest generation of artificial neural networks, attracting significant and universal attention due to their remarkable low-energy transmission by pulse and powerful capability for large-scale parallel computation. Current research on artificial neural networks gradually change from software simulation into hardware implementation. However, such a process is fraught with challenges. In particular, memristors are highly anticipated hardware candidates owing to their fast-programming speed, low power consumption, and compatibility with the complementary metal–oxide semiconductor (CMOS) technology. In this review, we start from the basic principles of SNNs, and then introduced memristor-based technologies for hardware implementation of SNNs, and further discuss the feasibility of integrating customized algorithm optimization to promote efficient and energy-saving SNN hardware systems. Finally, based on the existing memristor technology, we summarize the current problems and challenges in this field.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 2","pages":"Article 100093"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S270947232400011X/pdfft?md5=45bccc10058e80fbaed47545c5fd2f62&pid=1-s2.0-S270947232400011X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140767491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance eight-channel system with fractal superconducting nanowire single-photon detectors","authors":"Zifan Hao ,&nbsp;Kai Zou ,&nbsp;Yun Meng ,&nbsp;Jun-Yong Yan ,&nbsp;Fangyuan Li ,&nbsp;Yongheng Huo ,&nbsp;Chao-Yuan Jin ,&nbsp;Feng Liu ,&nbsp;Thomas Descamps ,&nbsp;Adrian Iovan ,&nbsp;Val Zwiller ,&nbsp;Xiaolong Hu","doi":"10.1016/j.chip.2024.100087","DOIUrl":"10.1016/j.chip.2024.100087","url":null,"abstract":"<div><p>Superconducting nanowire single-photon detectors (SNSPDs) have become a mainstream photon-counting technology that has been widely applied in various scenarios. So far, most multi-channel SNSPD systems, either reported in literature or commercially available, are polarization sensitive, that is, the system detection efficiency (SDE) of each channel is dependent on the state of polarization of the to-be-detected photons. Here, we reported an eight-channel system with fractal SNSPDs working in the wavelength range of 930 to 940 nm, which are all featured with low polarization sensitivity. In a close-cycled Gifford-McMahon cryocooler system with the base temperature of 2.2 K, we installed and compared the performance of two types of devices: (1) SNSPD, composed of a single, continuous nanowire and (2) superconducting nanowire avalanche photodetector (SNAP), composed of 16 cascaded units of two nanowires electrically connected in parallel. The highest SDE among the eight channels reaches <span><math><mrow><msubsup><mn>96</mn><mrow><mo>−</mo><mn>5</mn></mrow><mrow><mo>+</mo><mn>4</mn></mrow></msubsup></mrow></math></span>%, with the polarization sensitivity of 1.02 and a dark-count rate of 13 counts per second. The average SDE for eight channels for all states of polarization is estimated to be 90 ± 5%. It is concluded that both the SNSPDs and the SNAPs can reach saturated, high SDE at the wavelength of interest, and the SNSPDs show lower dark-count (false-count) rates, whereas the SNAPs show better properties in the time domain. With the adoption of this system, we showcased the measurements of the second-order photon-correlation functions of light emission from a single-photon source based on a semiconductor quantum dot and from a pulsed laser. It is believed that this work will provide new choices of systems with single-photon detectors combining the merits of high SDE, low polarization sensitivity, and low noise that can be tailored for different applications.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 2","pages":"Article 100087"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000054/pdfft?md5=a543b773159064080ca4b185f287073a&pid=1-s2.0-S2709472324000054-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140147188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solid-state quantum nodes based on color centers and rare-earth ions coupled with fiber Fabry–Pérot microcavities","authors":"Ruo-Ran Meng ,&nbsp;Xiao Liu ,&nbsp;Ming Jin ,&nbsp;Zong-Quan Zhou ,&nbsp;Chuan-Feng Li ,&nbsp;Guang-Can Guo","doi":"10.1016/j.chip.2023.100081","DOIUrl":"10.1016/j.chip.2023.100081","url":null,"abstract":"<div><p><strong>High-performance optical quantum memories serving as quantum nodes are crucial for the distribution of remote entanglement and the construction of</strong> <strong>large-scale</strong> <strong>quantum networks. Notably, quantum systems based on single emitters can achieve deterministic</strong> <strong>spin</strong><strong>–</strong><strong>photon</strong> <strong>entanglement,</strong> <strong>which</strong> <strong>greatly simplif</strong><strong>ies</strong> <strong>the difficulty of constructing quantum network nodes. Among them, optically interfaced spins embedded in</strong> <strong>solid-state</strong> <strong>systems, as</strong> <strong>atomic-like</strong> <strong>emitters, are important candidate systems for implementing</strong> <strong>long-lived</strong> <strong>quantum memory due to their stable physical properties and robustness to decoherence in scalable and compact hardware. To enhance the</strong> <strong>strength of light-matter interactions</strong><strong>, optical microcavities can be exploited as an important tool to generate</strong> <strong>high-</strong><strong>quality</strong> <strong>spin</strong><strong>–</strong><strong>photon</strong> <strong>entanglement for scalable quantum networks. They can enhance the photon collection probability and photon generation rate of specific optical transitions and improve the coherence and spectral purity of emitted photons. For</strong> <strong>solid-state</strong> <strong>systems, open Fabry</strong><strong>–</strong><strong>Pérot cavities can couple single emitters that are not in proximity to the surface, avoiding significant spectral diffusion induced by the interfaces while maintaining the wide tunability, which</strong> <strong>enables addressing of multiple single emitters in the frequency and spatial domain within a single device. This review describe</strong><strong>d</strong> <strong>the characteristics of single emitters as quantum memories with a comparison to atomic ensembles, the</strong> <strong>cavity-enhancement</strong> <strong>effect for single emitters and the advantages of different cavities, especially fiber Fabry</strong><strong>–</strong><strong>Pérot microcavities. Finally, recent experimental progress on</strong> <strong>solid-state</strong> <strong>single emitters coupled with fiber Fabry</strong><strong>–</strong><strong>Pérot microcavities</strong> <strong>was also</strong> <strong>reviewed, with a focus on color centers in diamond and silicon carbide, as well as</strong> <strong>rare-earth</strong> <strong>dopants.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100081"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000448/pdfft?md5=33e99ce5127b3e4b65c832933ad49fec&pid=1-s2.0-S2709472323000448-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139104479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure","authors":"Ru Xu ,&nbsp;Peng Chen ,&nbsp;Xiancheng Liu ,&nbsp;Jianguo Zhao ,&nbsp;Tinggang Zhu ,&nbsp;Dunjun Chen ,&nbsp;Zili Xie ,&nbsp;Jiandong Ye ,&nbsp;Xiangqian Xiu ,&nbsp;Fayu Wan ,&nbsp;Jianhua Chang ,&nbsp;Rong Zhang ,&nbsp;Youdou Zheng","doi":"10.1016/j.chip.2023.100079","DOIUrl":"10.1016/j.chip.2023.100079","url":null,"abstract":"<div><p>GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (<em>BV</em>) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, &gt; 10 kV) applications. However, another important question arises: can the device maintain a <em>BV</em> of 10 kV while having a low turn-on voltage (<em>V</em>_on)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a <em>BV</em> exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low <em>V</em>_on of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100079"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000424/pdfft?md5=05a98d0e651562a660181ef0f75531cf&pid=1-s2.0-S2709472323000424-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138686621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The future is frozen: cryogenic CMOS for high-performance computing","authors":"R. Saligram,&nbsp;A. Raychowdhury,&nbsp;Suman Datta","doi":"10.1016/j.chip.2023.100082","DOIUrl":"10.1016/j.chip.2023.100082","url":null,"abstract":"<div><p>Low temperature complementary metal oxide semiconductor (CMOS) or cryogenic CMOS is a promising avenue for the continuation of Moore's law while serving the needs of high performance computing. With temperature as a control “knob” to steepen the subthreshold slope behavior of CMOS devices, the supply voltage of operation can be reduced with no impact on operating speed. With the optimal threshold voltage engineering, the device ON current can be further enhanced, translating to higher performance. In this article, the experimentally calibrated data was adopted to tune the threshold voltage and investigated the power performance area of cryogenic CMOS at device, circuit and system level. We also presented results from measurement and analysis of functional memory chips fabricated in 28 nm bulk CMOS and 22 nm fully depleted silicon on insulator (FDSOI) operating at cryogenic temperature. Finally, the challenges and opportunities in the further development and deployment of such systems were discussed.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100082"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S270947232300045X/pdfft?md5=e908c4cd8e6aebd4f011d8de56abc3ec&pid=1-s2.0-S270947232300045X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139063515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}