Chip最新文献

{"title":"On-chip single-photon chirality encircling exceptional points","authors":"Zhen-Nan Tian ,&nbsp;Feng Yu ,&nbsp;Xu-Lin Zhang ,&nbsp;Kai Ming Lau ,&nbsp;Li-Cheng Wang ,&nbsp;Jensen Li ,&nbsp;C.T. Chan ,&nbsp;Qi-Dai Chen","doi":"10.1016/j.chip.2023.100066","DOIUrl":"10.1016/j.chip.2023.100066","url":null,"abstract":"<div><p>Exceptional points (EPs), which are typically defined as the degeneracy points of a non-Hermitian Hamiltonian, have been investigated in various physical systems such as photonic systems. In particular, the intriguing topological structures around EPs have given rise to novel strategies for manipulating photons and the underlying mechanism is especially useful for on-chip photonic applications. Although some on-chip experiments with the adoption of lasers have been reported, EP-based photonic chips working in the quantum regime largely remain elusive. In the current work, a single-photon experiment was proposed to dynamically encircle an EP in on-chip photonic waveguides possessing passive anti-parity-time symmetry. Photon coincidences measurement reveals a chiral feature of transporting single photons, which can act as a building block for on-chip quantum devices that require asymmetric transmissions. The findings in the current work pave the way for on-chip experimental study on the physics of EPs as well as inspiring applications for on-chip non-Hermitian quantum devices.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100066"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000291/pdfft?md5=585250416abe0e1c58bab1eb00c561ef&pid=1-s2.0-S2709472323000291-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76315801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wide bandgap semiconductor-based integrated circuits","authors":"Saravanan Yuvaraja,&nbsp;Vishal Khandelwal,&nbsp;Xiao Tang,&nbsp;Xiaohang Li","doi":"10.1016/j.chip.2023.100072","DOIUrl":"10.1016/j.chip.2023.100072","url":null,"abstract":"<div><p><strong>Wide-bandgap semiconductors</strong> <strong>exhibit</strong> <strong>much larger energy bandgaps</strong> <strong>than</strong> <strong>traditional semiconductors such as silicon, rendering them very promising</strong> <strong>to be applied</strong> <strong>in the fields of electronics and optoelectronics. Prominent examples of semiconductors include SiC, GaN, ZnO, and diamond, which exhibit distinctive characteristics such as elevated mobility and thermal conductivity. These characteristics facilitate the operation of a wide range of devices, including</strong> <strong>energy-efficient</strong> <strong>bipolar junction transistors (BJTs) and</strong> <strong>metal-oxide-semiconductor</strong> <strong>field-effect transistors (MOSFETs), as well as</strong> <strong>high-frequency</strong> <strong>high-electron-mobility transistors (HEMTs) and optoelectronic components such as</strong> <strong>light-emitting</strong> <strong>diodes (LEDs) and lasers. These semiconductors are used in building integrated circuits (ICs) to facilitate the operation of power electronics, computer devices, RF systems, and other optoelectronic advancements. These breakthroughs include various applications such as imaging, optical communication, and sensing. Among them, the field of power electronics has</strong> <strong>witnessed</strong> <strong>tremendous progress in recent years with the development of wide bandgap (WBG) semiconductor devices</strong><strong>,</strong> <strong>which is</strong> <strong>capable of switching large currents and voltages rapidly with low losses. However,</strong> <strong>it has been proven challenging</strong> <strong>to</strong> <strong>integrat</strong><strong>e</strong> <strong>these devices with silicon complementary metal oxide semiconductor (CMOS) logic circuits required for complex control functions</strong><strong>. The monolithic integration of silicon CMOS with WBG devices increases the complexity of fabricating monolithically integrated smart integrated circuits (ICs). This review article proposes implementing CMOS logic directly on the WBG platform as a solution. However, achieving the CMOS functionalities</strong> <strong>with the adoption of</strong> <strong>WBG materials</strong> <strong>still remains</strong> <strong>a significant hurdle. This article summarizes the research progress in the fabrication of integrated circuits</strong> <strong>adopting</strong> <strong>various WBG materials ranging from SiC to diamond, with the goal of building future smart power ICs.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100072"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000357/pdfft?md5=7d663859d62e803c93dc1d5e15b9f3c9&pid=1-s2.0-S2709472323000357-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135762974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impedancemetry of multiplexed quantum devices using an on-chip cryogenic complementary metal-oxide-semiconductor active inductor","authors":"L. Le Guevel ,&nbsp;G. Billiot ,&nbsp;S. De Franceschi ,&nbsp;A. Morel ,&nbsp;X. Jehl ,&nbsp;A.G.M. Jansen ,&nbsp;G. Pillonnet","doi":"10.1016/j.chip.2023.100068","DOIUrl":"10.1016/j.chip.2023.100068","url":null,"abstract":"<div><p>In the pursuit for scalable quantum processors, significant effort has been devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. The current work presented a novel approach called impedancemetry that is suitable for measuring the quantum capacitance of semiconductor qubits connected to a resonant LC-circuit. The impedancemetry circuit exploits the integration of a complementary metal-oxide-semiconductor (CMOS) active inductor in the resonator with tunable resonance frequency and quality factor, enabling the optimization of readout sensitivity for quantum devices. The realized cryogenic circuit allows fast impedance detection with a measured capacitance resolution down to 10 aF and an input-referred noise of 3.7 aF/<span><math><msqrt><mrow><mi>H</mi><mi>z</mi></mrow></msqrt></math></span>. At 4.2 K, the power consumption of the active inductor amounts to 120 μW, with an additional dissipation for on-chip current excitation (0.15 μW) and voltage amplification (2.9 mW) of the impedance measurement. Compared to the commonly used schemes based on dispersive RF reflectometry which require millimeter-scale passive inductors, the circuit exhibits a notably reduced footprint (50 μm × 60 μm), facilitating its integration in a scalable quantum-classical architecture. The impedancemetry method has been applied at 4.2 K to the detection of quantum effects in the gate capacitance of on-chip nanometric CMOS transistors that are individually addressed via multiplexing.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100068"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S270947232300031X/pdfft?md5=f88deb9c40975386ca56fe008802df80&pid=1-s2.0-S270947232300031X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135638060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental demonstration of SnO₂ nanofiber-based memristors and their data-driven modeling for nanoelectronic applications","authors":"Soumi Saha ,&nbsp;Madadi Chetan Kodand Reddy ,&nbsp;Tati Sai Nikhil ,&nbsp;Kaushik Burugupally ,&nbsp;Sanghamitra DebRoy ,&nbsp;Akshay Salimath ,&nbsp;Venkat Mattela ,&nbsp;Surya Shankar Dan ,&nbsp;Parikshit Sahatiya","doi":"10.1016/j.chip.2023.100075","DOIUrl":"10.1016/j.chip.2023.100075","url":null,"abstract":"<div><p>This paper demonstrated the fabrication, characterization, data-driven modeling, and practical application of a 1D SnO₂ nanofiber-based memristor, in which a 1D SnO₂ active layer was sandwiched between silver (Ag) and aluminum (Al) electrodes. This device yielded a very high <em>R</em>_OFF : <em>R</em>_ON of ∼10⁴ (<em>I</em>_ON : <em>I</em>_OFF of ∼10⁵) with an excellent activation slope of 10 mV/dec, low set voltage of <em>V</em>_SET ∼ 1.14 V and good repeatability. This paper physically explained the conduction mechanism in the layered SnO₂ nanofiber-based memristor. The conductive network was composed of nanofibers that play a vital role in the memristive action, since more conductive paths could facilitate the hopping of electron carriers. Energy band structures experimentally extracted with the adoption of ultraviolet photoelectron spectroscopy strongly support the claims reported in this paper. An machine learning (ML)–assisted, data-driven model of the fabricated memristor was also developed employing different popular algorithms such as polynomial regression, support vector regression, k nearest neighbors, and artificial neural network (<span>ANN</span>) to model the data of the fabricated device. We have proposed two types of ANN models (type I and type II) algorithms, illustrated with a detailed flowchart, to model the fabricated memristor. Benchmarking with standard ML techniques shows that the type II ANN algorithm provides the best mean absolute percentage error of 0.0175 with a 98% <em>R</em>² score. The proposed data-driven model was further validated with the characterization results of similar new memristors fabricated adopting the same fabrication recipe, which gave satisfactory predictions. Lastly, the ANN type II model was applied to design and implement simple AND &amp; OR logic functionalities adopting the fabricated memristors with expected, near-ideal characteristics.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100075"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000382/pdfft?md5=a3b001df8e3928048e131f6f43cfc09c&pid=1-s2.0-S2709472323000382-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138557191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Traveling-wave parametric amplifier–induced qubit dephasing: analysis and mitigation","authors":"Yingshan Zhang ,&nbsp;Huikai Xu ,&nbsp;Yu Song ,&nbsp;Yuqun Xu ,&nbsp;Shuang Yang ,&nbsp;Ziyue Hua ,&nbsp;Shoukuan Zhao ,&nbsp;Weiyang Liu ,&nbsp;Guangming Xue ,&nbsp;Yirong Jin ,&nbsp;Haifeng Yu","doi":"10.1016/j.chip.2023.100067","DOIUrl":"10.1016/j.chip.2023.100067","url":null,"abstract":"<div><p>The mitigation of dephasing poses a significant challenge to improving the performance of error-prone superconducting quantum computing systems. Here, the dephasing of a transmon qubit in a dispersive readout regime was investigated by adopting a Josephson traveling-wave parametric amplifier as the preamplifier. Our findings reveal that the potent pump leakage from the preamplifier may lead to severe dephasing. This could be attributed to a mixture of measurement-induced dephasing, ac Stark effect, and heating. It is showed that pulse-mode readout is a promising measurement scheme to mitigate qubit dephasing while minimizing the need for bulky circulators. Our work provides key insights into mitigating decoherence from microwave-pumped preamplifiers, which will be critical for advancing large-scale quantum computers.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100067"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000308/pdfft?md5=fc3625dc271609ec6298db06b0c60167&pid=1-s2.0-S2709472323000308-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134994753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deterministic relation between thermal-phonon dressings and a non-Hermitian multi-Fano interferences router in ion-doped microcrystals","authors":"Huanrong Fan ,&nbsp;Faizan Raza ,&nbsp;Anas Mujahid ,&nbsp;Peng Li ,&nbsp;Yafen Wang ,&nbsp;Haitian Tang ,&nbsp;Muhammad Usman ,&nbsp;Bo Li ,&nbsp;Changbiao Li ,&nbsp;Yanpeng Zhang","doi":"10.1016/j.chip.2023.100077","DOIUrl":"10.1016/j.chip.2023.100077","url":null,"abstract":"<div><p>The multi-Fano interference, which is obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu³⁺ : BiPO₄ (7 : 1, 6 : 1, 1 : 1, and 0.5 : 1) and Eu³⁺ : NaYF₄ (1 : 1/4) crystals, were reported in this work. Multidressed spontaneous four-wave mixing and multidressed fluorescence (multiorder) were adopted to optimize the strong photon–phonon nested dressing effect, which results in more obvious multi-Fano interference. Firstly, the multi-Fano is produced through interference in continuous and multibound states. Secondly, five multi-Fano dips are originated from the nested five dressings (one photon and four phonons) under symmetrical splitting of ⁷F₁ energy level. It is found that the pure H-phase (0.5 : 1) sample exhibits the strongest photon–phonon dressed effect (five Fano dips). Further, high-order non-Hermitian exceptional points in multi-Fano interference were investigated by adjusting the ratio of Rabi frequency to dephase rate through nested photon and phonon dressing. The experimental results are validated by theoretical simulations, which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences (multichannel) router.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100077"},"PeriodicalIF":0.0,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000400/pdfft?md5=b2c658c77e79f727b005a7f997cd812c&pid=1-s2.0-S2709472323000400-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138557190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensing with extended gate negative capacitance ferroelectric field-effect transistors","authors":"Honglei Xue ,&nbsp;Yue Peng ,&nbsp;Qiushi Jing ,&nbsp;Jiuren Zhou ,&nbsp;Genquan Han ,&nbsp;Wangyang Fu","doi":"10.1016/j.chip.2023.100074","DOIUrl":"10.1016/j.chip.2023.100074","url":null,"abstract":"<div><p>With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive field-effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-efficient ISFET was proposed based on a metal–ferroelectric–insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100074"},"PeriodicalIF":0.0,"publicationDate":"2023-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000370/pdfft?md5=93e20422bfd5b4781204092c8a11d70d&pid=1-s2.0-S2709472323000370-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138566313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wafer-scale engineering of two-dimensional transition metal dichalcogenides","authors":"Xiang Lan ,&nbsp;Yingliang Cheng ,&nbsp;Xiangdong Yang ,&nbsp;Zhengwei Zhang","doi":"10.1016/j.chip.2023.100057","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100057","url":null,"abstract":"<div><p>Moore's Law has been the driving force behind the semiconductor industry for several decades, but as silicon-based transistors approach their physical limits, researchers are searching for new materials to sustain this exponential growth. Two-dimensional transition metal dichalcogenides (TMDs), with their atomically thin structure and enticing physical properties, have emerged as the most promising candidates for downsizing and improving device integration. Emboldened by the direction of achieving large-area and high-quality TMDs growth, wafer-scale TMDs growth strategies have been continuously developed, suggesting that TMDs are poised to become a new platform for next-generation electronic devices. In this review, advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed. In addition, the performance in electronic devices was also discussed, providing an outlook on the opportunities and challenges that lie ahead in their development.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100057"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phonon lasing enhanced mass sensor with zeptogram resolution under ambient conditions","authors":"Fei Pan ,&nbsp;Kaiyu Cui ,&nbsp;Yidong Huang ,&nbsp;Ziming Chen ,&nbsp;Ning Wu ,&nbsp;Guoren Bai ,&nbsp;Zhilei Huang ,&nbsp;Xue Feng ,&nbsp;Fang Liu ,&nbsp;Wei Zhang","doi":"10.1016/j.chip.2023.100050","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100050","url":null,"abstract":"<div><p>High-sensitivity mass sensors under ambient conditions are essential in various fields such as biological research, gas sensing and environmental monitoring. In the current work, a phonon lasing enhanced mass sensor was proposed based on an optomechanical crystal cavity under ambient conditions. The phonon lasing was harnessed to achieve ultra-high resolution since it resulted in an extremely narrow mechanical linewidth (less than 10 kHz). Masses with different weights were deposited on the cavity, it is predicted that the maximum resolution for mass sensing can be 65 ± 19 zg, which approaches the mass order of a protein and an oligonucleotide. This implies the potential application of the proposed method in the biomedical fields such as oligonucleotide drug delivery area and the Human Proteome Project.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100050"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Refrigeration technologies of cryogenic chips","authors":"Haonan Chang ,&nbsp;Jun Zhang","doi":"10.1016/j.chip.2023.100054","DOIUrl":"https://doi.org/10.1016/j.chip.2023.100054","url":null,"abstract":"<div><p>Cryogenic electronics refers to the devices and circuits operated at cryogenic temperatures (below 123.15 K), which are made from a variety of materials such as insulators, conductors, semiconductors, superconductors and topological materials. The cryogenic electronics are endowed with some unique advantages that cannot be realized in room temperature, including high computing speed, high power performance and so on. Choosing the appropriate refrigeration technology is critical for achieving the best performance of the cryogenic electronics. In this review, the cryogenic technology was divided into non-optical refrigeration and optical refrigeration, where non-optical refrigeration technologies are relatively conventional refrigeration technologies, while optical refrigeration is an emerging research field for the cooling of the chips. In the current work, the fundamental principles, applications and development prospects of the non-optical refrigeration was introduced, also the research history, fundamental principles, existing problems and application prospects of the optical refrigeration was thoroughly reviewed.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 3","pages":"Article 100054"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}