二维过渡金属二硫族化合物的晶圆级工程

Chip Pub Date : 2023-09-01 DOI:10.1016/j.chip.2023.100057
Xiang Lan , Yingliang Cheng , Xiangdong Yang , Zhengwei Zhang
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引用次数: 0

摘要

几十年来,摩尔定律一直是半导体行业的驱动力,但随着硅基晶体管接近其物理极限,研究人员正在寻找新的材料来维持这种指数增长。二维过渡金属二硫族化合物(TMDs)具有原子级薄的结构和诱人的物理性质,已成为缩小尺寸和提高器件集成度的最有前途的候选者。在实现大面积、高质量TMDs生长的方向的鼓舞下,晶圆级TMDs生长策略不断发展,表明TMDs有望成为下一代电子器件的新平台。在这篇综述中,对晶圆级TMDs的先进合成路线和固有性能进行了批判性评估。此外,还讨论了电子设备的性能,展望了电子设备发展的机遇和挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer-scale engineering of two-dimensional transition metal dichalcogenides

Moore's Law has been the driving force behind the semiconductor industry for several decades, but as silicon-based transistors approach their physical limits, researchers are searching for new materials to sustain this exponential growth. Two-dimensional transition metal dichalcogenides (TMDs), with their atomically thin structure and enticing physical properties, have emerged as the most promising candidates for downsizing and improving device integration. Emboldened by the direction of achieving large-area and high-quality TMDs growth, wafer-scale TMDs growth strategies have been continuously developed, suggesting that TMDs are poised to become a new platform for next-generation electronic devices. In this review, advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed. In addition, the performance in electronic devices was also discussed, providing an outlook on the opportunities and challenges that lie ahead in their development.

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