Chip最新文献

{"title":"Deterministic relation between thermal-phonon dressings and a non-Hermitian multi-Fano interferences router in ion-doped microcrystals","authors":"Huanrong Fan ,&nbsp;Faizan Raza ,&nbsp;Anas Mujahid ,&nbsp;Peng Li ,&nbsp;Yafen Wang ,&nbsp;Haitian Tang ,&nbsp;Muhammad Usman ,&nbsp;Bo Li ,&nbsp;Changbiao Li ,&nbsp;Yanpeng Zhang","doi":"10.1016/j.chip.2023.100077","DOIUrl":"10.1016/j.chip.2023.100077","url":null,"abstract":"<div><p>The multi-Fano interference, which is obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu³⁺ : BiPO₄ (7 : 1, 6 : 1, 1 : 1, and 0.5 : 1) and Eu³⁺ : NaYF₄ (1 : 1/4) crystals, were reported in this work. Multidressed spontaneous four-wave mixing and multidressed fluorescence (multiorder) were adopted to optimize the strong photon–phonon nested dressing effect, which results in more obvious multi-Fano interference. Firstly, the multi-Fano is produced through interference in continuous and multibound states. Secondly, five multi-Fano dips are originated from the nested five dressings (one photon and four phonons) under symmetrical splitting of ⁷F₁ energy level. It is found that the pure H-phase (0.5 : 1) sample exhibits the strongest photon–phonon dressed effect (five Fano dips). Further, high-order non-Hermitian exceptional points in multi-Fano interference were investigated by adjusting the ratio of Rabi frequency to dephase rate through nested photon and phonon dressing. The experimental results are validated by theoretical simulations, which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences (multichannel) router.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100077"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000400/pdfft?md5=b2c658c77e79f727b005a7f997cd812c&pid=1-s2.0-S2709472323000400-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138557190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cooperative engineering the multiple radio-frequency fields to reduce the X-junction barrier for ion trap chips","authors":"Yarui Liu ,&nbsp;Zhao Wang ,&nbsp;Zixuan Xiang ,&nbsp;Qikun Wang ,&nbsp;Tianyang Hu ,&nbsp;Xu Wang","doi":"10.1016/j.chip.2023.100078","DOIUrl":"10.1016/j.chip.2023.100078","url":null,"abstract":"<div><p>With the increasing number of ion qubits and improving performance of sophisticated quantum algorithms, more and more scalable complex ion trap electrodes have been developed and integrated. Nonlinear ion shuttling operations at the junction are more frequently used, such as in the areas of separation, merging, and exchanging. Several studies have been conducted to optimize the geometries of the radio-frequency (RF) electrodes to generate ideal trapping electric fields with a lower junction barrier and an even ion height of the RF saddle points. However, this iteration is time-consuming and commonly accompanied by complicated and sharp electrode geometry. Therefore, high-accuracy fabrication process and high electric breakdown voltage are essential. In the current work, an effective method was proposed to reduce the junction's pseudo-potential barrier and ion height variation by setting several individual RF electrodes and adjusting each RF voltage amplitude without changing the geometry of the electrode structure. The simulation results show that this method shows the same effect on engineering the trapping potential and reducing the potential barrier, but requires fewer parameters and optimization time. By combining this method with the geometrical shape-optimizing, the pseudo-potential barrier and the ion height variation near the junction can be further reduced. In addition, the geometry of the electrodes can be simplified to relax the fabrication precision and keep the ability to engineer the trapping electric field in real-time even after the fabrication of the electrodes, which provides a potential all-electric degree of freedom for the design and control of the two-dimensional ion crystals and investigation of their phase transition.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100078"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000412/pdfft?md5=24fb94275ac1328ef859f1df70f873a1&pid=1-s2.0-S2709472323000412-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138717373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wafer-scale synthesis of two-dimensional materials for integrated electronics","authors":"Zijia Liu ,&nbsp;Xunguo Gong ,&nbsp;Jinran Cheng ,&nbsp;Lei Shao ,&nbsp;Chunshui Wang ,&nbsp;Jian Jiang ,&nbsp;Ruiqing Cheng ,&nbsp;Jun He","doi":"10.1016/j.chip.2023.100080","DOIUrl":"10.1016/j.chip.2023.100080","url":null,"abstract":"<div><p><strong>Two-dimensional (2D) van der Waals materials</strong> <strong>have attracted great</strong> <strong>interest</strong> <strong>and facilitated</strong> <strong>the development of</strong> <strong>post-Moore</strong> <strong>electronics</strong> <strong>owing</strong> <strong>to their novel physical properties and high compatibility with traditional microfabrication techniques. Their</strong> <strong>wafer-scale</strong> <strong>synthesis has become a critical challenge for</strong> <strong>large-scale</strong> <strong>integrated applications. Although the</strong> <strong>wafer-scale</strong> <strong>synthesis approaches for some 2D materials have been extensively explored, the preparation of</strong> <strong>high-quality</strong> <strong>thin films with</strong> <strong>well-controlled</strong> <strong>thickness remains a big challenge. This review focuses on the</strong> <strong>wafer-scale</strong> <strong>synthesis of 2D materials and their applications in integrated electronics. First</strong>ly<strong>,</strong> <strong>several representative 2D layered materials including their crystal structures and unique electronic properties</strong> <strong>were introduced</strong><strong>. Then, the current synthesis strategies of 2D layered materials at the wafer scale, which are divided into “top-down” and “bottom-up”,</strong> <strong>were</strong> <strong>reviewed in depth. After</strong><strong>wards</strong><strong>, the applications of 2D materials wafer in integrated electrical and optoelectronic devices</strong> <strong>were</strong> <strong>discussed. Finally, the current challenges and future prospects for 2D integrated electronics</strong> <strong>were</strong> <strong>presented.</strong> <strong>It is</strong> <strong>hope</strong><strong>d</strong> <strong>that this review will provide comprehensive and insightful guidance for the development of</strong> <strong>wafer-scale</strong> <strong>2D materials and their integrated applications.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100080"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000436/pdfft?md5=46d0186f7a7f1ea18f1a294fdc0b0c25&pid=1-s2.0-S2709472323000436-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139030745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensing with extended gate negative capacitance ferroelectric field-effect transistors","authors":"Honglei Xue ,&nbsp;Yue Peng ,&nbsp;Qiushi Jing ,&nbsp;Jiuren Zhou ,&nbsp;Genquan Han ,&nbsp;Wangyang Fu","doi":"10.1016/j.chip.2023.100074","DOIUrl":"10.1016/j.chip.2023.100074","url":null,"abstract":"<div><p>With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive field-effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-efficient ISFET was proposed based on a metal–ferroelectric–insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100074"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000370/pdfft?md5=93e20422bfd5b4781204092c8a11d70d&pid=1-s2.0-S2709472323000370-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138566313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Colloidal semiconductor nanocrystals for light emission and photonic integration","authors":"Huan Liu ,&nbsp;Dabin Lin ,&nbsp;Puning Wang ,&nbsp;Tingchao He ,&nbsp;Rui Chen","doi":"10.1016/j.chip.2023.100073","DOIUrl":"10.1016/j.chip.2023.100073","url":null,"abstract":"<div><p>Solution-processed colloidal semiconductor nanocrystals (NCs) have become attractive materials for the development of optoelectronic and photonic devices due to their inexpensive synthesis and excellent optical properties. Recently, CdSe NCs with different dimensions and structures have achieved significant progress in photonic integrated circuits (PICs), including light generation (laser), guiding (waveguide), modulation, and detection on a chip. This article summarizes the development of CdSe NCs–based lasers and discusses the challenges and opportunities for the application of CdSe NCs in PICs. Firstly, an overview of the optical properties of CdSe-based NCs with different dimensions is presented, with emphasis on the amplified stimulated emission and laser properties. Then, the nanophotonic devices and PICs based on CdSe NCs are introduced and discussed. Finally, the prospects for PICs are addressed.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 1","pages":"Article 100073"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000369/pdfft?md5=587ddf411c91e726f18e1488842ba586&pid=1-s2.0-S2709472323000369-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135965855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cryo-CMOS modeling and a 600 MHz cryogenic clock generator for quantum computing applications","authors":"Qiwen Xue ,&nbsp;Yuanke Zhang ,&nbsp;Mingjie Wen ,&nbsp;Xiaohu Zhai ,&nbsp;Yuefeng Chen ,&nbsp;Tengteng Lu ,&nbsp;Chao Luo ,&nbsp;Guoping Guo","doi":"10.1016/j.chip.2023.100065","DOIUrl":"10.1016/j.chip.2023.100065","url":null,"abstract":"<div><p><strong>The development of large-scale quantum computing has boosted an urgent desire for the advancement of cryogenic CMOS (cryo-CMOS), which is a promising scalable solution for the control and read-out interface of quantum bits. In the current work, 180 nm CMOS transistors were characterized and modeled down to 4 K, and the impact of low-temperature transistor performance variations on circuit design was also analyzed. Based on the proposed cryogenic model, a 180 nm CMOS-based 450 to 850 MHz clock generator operating at 4 K for quantum computing applications was presented. At the output frequency of 600 MHz, it achieved &lt; 4.8 ps RMS jitter with 30 mW power consumption (with test buffer), corresponding to a</strong> −<strong>211.6 dB jitter-power FOM, which is suitable for providing a stable clock signal for the control and readout electronics of scalable quantum computers.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100065"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S270947232300028X/pdfft?md5=f1b8f87045e01a388aab76b0d2867317&pid=1-s2.0-S270947232300028X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73303727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced RF filters for wireless communications","authors":"Kai Yang ,&nbsp;Chenggong He ,&nbsp;Jiming Fang ,&nbsp;Xinhui Cui ,&nbsp;Haiding Sun ,&nbsp;Yansong Yang ,&nbsp;Chengjie Zuo","doi":"10.1016/j.chip.2023.100058","DOIUrl":"10.1016/j.chip.2023.100058","url":null,"abstract":"<div><p><strong>This paper provides a comprehensive review of advanced radio frequency (RF) filter technologies available in miniature chip or integrated circuit (IC) form for wireless communication applications. The RF filter technologies were organized according to the timeline of their introduction, in conjunction with each generation of wireless (cellular) communication standards (1G to 5G). This approach enabled a clear explanation of the corresponding invention history, working principles, typical applications and future development trends. The article covered commercially successful acoustic filter technologies, including the widely used surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters, as well as electromagnetic filter technologies based on low-temperature co-fired ceramic (LTCC) and integrated passive device (IPD). Additionally, emerging filter technologies such as IHP-SAW, suspended thin-film lithium niobate (LiNbO</strong>_{<strong>3</strong>} <strong>or LN) resonant devices and hybrid were also discussed. In order to achieve higher performance, smaller form factor and lower cost for the wireless communication industry, it is believed that fundamental breakthroughs in materials and fabrication techniques are necessary for the future development of RF filters.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100058"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000217/pdfft?md5=fd55490793b0bfb9df7f5a758af084da&pid=1-s2.0-S2709472323000217-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88380217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine learning-accelerated discovery of novel 2D ferromagnetic materials with strong magnetization","authors":"Chao Xin ,&nbsp;Yaohui Yin ,&nbsp;Bingqian Song ,&nbsp;Zhen Fan ,&nbsp;Yongli Song ,&nbsp;Feng Pan","doi":"10.1016/j.chip.2023.100071","DOIUrl":"10.1016/j.chip.2023.100071","url":null,"abstract":"<div><p>Two-dimensional ferromagnetic (2DFM) semiconductors (metals, half-metals, and so on) are important materials for next-generation nano-electronic and nano-spintronic devices. However, these kinds of materials remain scarce, “trial and error” experiments and calculations are both time-consuming and expensive. In the present work, in order to obtain the optimal 2DFM materials with strong magnetization, a machine learning (ML) framework was established to search the 2D material space containing over 2417 samples and identified 615 compounds whose magnetic orders were then determined via high-throughput first-principles calculations. With the adoption of ML algorithms, two classification models and a regression model were trained. The interpretability of the regression model was evaluated through Shapley Additive exPlanations (SHAP) analysis. Unexpectedly, it is found that Cr₂NF₂ is a potential antiferromagnetic ferroelectric 2D multiferroic material. More importantly, 60 novel 2DFM candidates were predicted, and among them, 13 candidates have magnetic moments of &gt; 7<em>μ</em>_B. Os₂Cl₈, Fe₃GeSe₂, and Mn₄N₃S₂ were predicted to be novel 2DFM semiconductors, metals, and half-metals, respectively. With the adoption of the ML approach in the current work, the prediction of 2DFM materials with strong magnetization can be accelerated, and the computation time can be drastically reduced by more than one order of magnitude.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100071"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000345/pdfft?md5=bf5d444199bcaf2e9ba06bbd879b31e2&pid=1-s2.0-S2709472323000345-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135762739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “Implementing hardware primitives based on memristive spatiotemporal variability into cryptography applications” [Chip 2 (2023) 100040]","authors":"Bo Liu ,&nbsp;Yudi Zhao ,&nbsp;Hanyuan Liang ,&nbsp;Shiwei Feng","doi":"10.1016/j.chip.2023.100076","DOIUrl":"10.1016/j.chip.2023.100076","url":null,"abstract":"","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100076"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000394/pdfft?md5=e96bdec6e1c96a2ae69e4fd2caed25ee&pid=1-s2.0-S2709472323000394-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139104580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-chip single-photon chirality encircling exceptional points","authors":"Zhen-Nan Tian ,&nbsp;Feng Yu ,&nbsp;Xu-Lin Zhang ,&nbsp;Kai Ming Lau ,&nbsp;Li-Cheng Wang ,&nbsp;Jensen Li ,&nbsp;C.T. Chan ,&nbsp;Qi-Dai Chen","doi":"10.1016/j.chip.2023.100066","DOIUrl":"10.1016/j.chip.2023.100066","url":null,"abstract":"<div><p>Exceptional points (EPs), which are typically defined as the degeneracy points of a non-Hermitian Hamiltonian, have been investigated in various physical systems such as photonic systems. In particular, the intriguing topological structures around EPs have given rise to novel strategies for manipulating photons and the underlying mechanism is especially useful for on-chip photonic applications. Although some on-chip experiments with the adoption of lasers have been reported, EP-based photonic chips working in the quantum regime largely remain elusive. In the current work, a single-photon experiment was proposed to dynamically encircle an EP in on-chip photonic waveguides possessing passive anti-parity-time symmetry. Photon coincidences measurement reveals a chiral feature of transporting single photons, which can act as a building block for on-chip quantum devices that require asymmetric transmissions. The findings in the current work pave the way for on-chip experimental study on the physics of EPs as well as inspiring applications for on-chip non-Hermitian quantum devices.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"2 4","pages":"Article 100066"},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472323000291/pdfft?md5=585250416abe0e1c58bab1eb00c561ef&pid=1-s2.0-S2709472323000291-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76315801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}