用于量子计算应用的低温-CMOS 建模和 600 MHz 低温时钟发生器

Chip Pub Date : 2023-12-01 DOI:10.1016/j.chip.2023.100065
Qiwen Xue , Yuanke Zhang , Mingjie Wen , Xiaohu Zhai , Yuefeng Chen , Tengteng Lu , Chao Luo , Guoping Guo
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引用次数: 0

摘要

大规模量子计算的发展推动了人们对低温 CMOS(cryo-CMOS)技术进步的迫切愿望,而低温 CMOS 是量子比特控制和读出接口的一种前景广阔的可扩展解决方案。在目前的工作中,对低至 4 K 的 180 nm CMOS 晶体管进行了表征和建模,并分析了低温晶体管性能变化对电路设计的影响。根据所提出的低温模型,介绍了一种在 4 K 温度下工作的基于 180 nm CMOS 的 450 至 850 MHz 时钟发生器,适用于量子计算应用。在输出频率为 600 MHz 时,它实现了 < 4.8 ps RMS 抖动,功耗为 30 mW(带测试缓冲器),相当于 -211.6 dB 抖动-功耗 FOM,适合为可扩展量子计算机的控制和读出电子设备提供稳定的时钟信号。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cryo-CMOS modeling and a 600 MHz cryogenic clock generator for quantum computing applications

The development of large-scale quantum computing has boosted an urgent desire for the advancement of cryogenic CMOS (cryo-CMOS), which is a promising scalable solution for the control and read-out interface of quantum bits. In the current work, 180 nm CMOS transistors were characterized and modeled down to 4 K, and the impact of low-temperature transistor performance variations on circuit design was also analyzed. Based on the proposed cryogenic model, a 180 nm CMOS-based 450 to 850 MHz clock generator operating at 4 K for quantum computing applications was presented. At the output frequency of 600 MHz, it achieved < 4.8 ps RMS jitter with 30 mW power consumption (with test buffer), corresponding to a211.6 dB jitter-power FOM, which is suitable for providing a stable clock signal for the control and readout electronics of scalable quantum computers.

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