利用双势垒阳极结构实现 0.36 V 接通电压和 10 kV 击穿电压的侧 AlGaN/GaN 肖特基势垒二极管

Chip Pub Date : 2024-03-01 DOI:10.1016/j.chip.2023.100079

Ru Xu , Peng Chen , Xiancheng Liu , Jianguo Zhao , Tinggang Zhu , Dunjun Chen , Zili Xie , Jiandong Ye , Xiangqian Xiu , Fayu Wan , Jianhua Chang , Rong Zhang , Youdou Zheng

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引用次数: 0

摘要

氮化镓功率电子器件，如横向氮化镓/氮化镓肖特基势垒二极管（SBD），已受到极大关注。许多研究都侧重于优化器件的击穿电压 (BV)，并特别强调要实现超高压（UHV，10 kV）应用。然而，另一个重要问题随之而来：该器件能否在保持 10 kV BV 的同时，具有较低的开启电压 (Von)？在本研究中，我们展示了在蓝宝石上制造超高压 AlGaN/GaN SBD 的过程，其 BV 超过 10 kV。此外，通过利用由铂（Pt）和钽（Ta）组成的双势垒阳极（DBA）结构，我们实现了 0.36 V 的超低 Von。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV) applications. However, another important question arises: can the device maintain a BV of 10 kV while having a low turn-on voltage (V_on)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low V_on of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications.

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来源期刊

Chip

CiteScore

2.80

自引率

0.00%

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