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Call for Papers: Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices 征稿：电气和电子工程师学会电子器件学报》智能传感器系统特刊

IF 2.3 3区工程技术

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-11-22 DOI: 10.1109/TSM.2024.3455873

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Guest Editorial Special Section on Sustainability 可持续发展特刊特约编辑

IF 2.3 3区工程技术

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-11-22 DOI: 10.1109/TSM.2024.3485049

Oliver D. Patterson;Tomasz Brozek;Kaushik Balamukundhan;David M. Fried;Bill Nehrer;Suresh Ramarajan

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Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-22 DOI: 10.1109/TNANO.2024.3504963

Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev

{"title":"Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions","authors":"Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev","doi":"10.1109/TNANO.2024.3504963","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504963","url":null,"abstract":"In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000) variations. Such V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"815-821"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Semiconductor Manufacturing Information for Authors IEEE Transactions on Semiconductor Manufacturing 为作者提供的信息

IF 2.3 3区工程技术

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-11-22 DOI: 10.1109/TSM.2024.3455877

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IF 2.3 3区工程技术

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-11-22 DOI: 10.1109/TSM.2024.3487439

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TechRxiv: Share Your Preprint Research With the World! TechRxiv：与世界分享您的预印本研究成果！

IF 2.3 3区工程技术

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-11-22 DOI: 10.1109/TSM.2024.3504213

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IEEE Transactions on Semiconductor Manufacturing Publication Information 电气和电子工程师学会半导体制造期刊》出版信息

IF 2.3 3区工程技术

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-11-22 DOI: 10.1109/TSM.2024.3455869

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Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2024-11-22 DOI: 10.1109/TNANO.2024.3504601

Banti Yadav;Pankaj Srivastava;Varun Sharma

{"title":"Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach","authors":"Banti Yadav;Pankaj Srivastava;Varun Sharma","doi":"10.1109/TNANO.2024.3504601","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504601","url":null,"abstract":"Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the \u0000<inline-formula><tex-math>$mathbf {E-k}$</tex-math></inline-formula>\u0000 diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters \u0000<inline-formula><tex-math>$mathbf {(R_{Q}, L_{K}, C_{Q})}$</tex-math></inline-formula>\u0000. The calculation of the transmission channels \u0000<inline-formula><tex-math>$mathbf {(N_{ch})}$</tex-math></inline-formula>\u0000 against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of \u0000<inline-formula><tex-math>$mathbf {R_{Q}}$</tex-math></inline-formula>\u0000 (6.45 Kohm), \u0000<inline-formula><tex-math>$mathbf {L_{K}}$</tex-math></inline-formula>\u0000 \u0000<inline-formula><tex-math>$mathbf {(6.42nH/mu m)}$</tex-math></inline-formula>\u0000, and \u0000<inline-formula><tex-math>$ mathbf {C_{Q}(6.16pF/cm)}$</tex-math></inline-formula>\u0000 for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"809-814"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Utilizing MRAMs With Low Resistance and Limited Dynamic Range for Efficient MAC Accelerator

IF 1.8

IEEE Open Journal of Nanotechnology Pub Date : 2024-11-18 DOI: 10.1109/OJNANO.2024.3501293

Sateesh;Kaustubh Chakarwar;Shubham Sahay

{"title":"Utilizing MRAMs With Low Resistance and Limited Dynamic Range for Efficient MAC Accelerator","authors":"Sateesh;Kaustubh Chakarwar;Shubham Sahay","doi":"10.1109/OJNANO.2024.3501293","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3501293","url":null,"abstract":"The recent advancements in data mining, machine learning algorithms and cognitive systems have necessitated the development of neuromorphic processing engines which may enable resource and computationally intensive applications on the internet-of-Things (IoT) edge devices with unprecedented energy efficiency. Spintronics based magnetic memory devices can emulate synaptic behavior efficiently and are hailed as one of the most promising candidates for realizing compact and ultra-energy efficient neural network accelerators. Although ultra-dense magnetic memories with multi-bit capability (MLC) were proposed recently, their application in hybrid CMOS-non-volatile memory accelerators is limited due to their low dynamic range (memory window) and high cell currents (ON/OFF-state resistance in ∼kΩ). In this work, we propose a novel supercell to enable the use of MLC MRAMs for neuromorphic multiply-accumulate (MAC) accelerators. For proof-of-concept demonstration, we exploit an MLC MRAM based on c-MTJ for realizing a highly scalable 2-FinFET-1-MRAM supercell with large dynamic range, low supercell currents and high endurance. Furthermore, we perform a comprehensive design exploration of a time-domain MAC accelerator utilizing the proposed supercell. Our detailed analysis using the ASAP7 PDK from ARM for FinFETs and an experimentally calibrated compact model for c-MTJ-based MRAM indicates the possibility of realizing a significantly high energy-efficiency of 87.4 TOPS/W and a throughput of 2.5 TOPS for a 200×200 MAC operation with 4-bit precision.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"141-148"},"PeriodicalIF":1.8,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10756528","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Colloidal Spin Ice Cellular Automata for Logic Design

IF 1.8

IEEE Open Journal of Nanotechnology Pub Date : 2024-11-18 DOI: 10.1109/OJNANO.2024.3499974

Vasileios P. Karkanis;Nikolaos I. Dourvas;Andrew Adamatzky;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis

{"title":"Colloidal Spin Ice Cellular Automata for Logic Design","authors":"Vasileios P. Karkanis;Nikolaos I. Dourvas;Andrew Adamatzky;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2024.3499974","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3499974","url":null,"abstract":"An engineered system that exhibits a variety of interesting properties, such as collective dynamics that are not inherited in their building blocks, is the artificial spin ice (ASI) meta-materials. The building block of such a system is a dipolar nanomagnet with sub-micrometer dimensions. These nanomagnets are arranged in specific designs usually in square or kagome shape and are coupled together by their magnetic interactions. With external magnetic fields, it is possible to create magnetic moments or monopoles that cause a frustration to the system. Because of the local interactions, those moments travel through the topology. The observation of such structures is a very challenging procedure, because of the extremely fast flipping process of the spins. This is why the researchers use mesoscopic systems with materials such as colloids or spheres of nanomagnets which are placed inside of islands in periodic lattices that generate frustration by design. The interactions between those nanomagnets are based on Coulomb forces and are usually modeled by Brownian equations. In this paper, we propose a simple yet effective Cellular Automata (CA) model that can describe effectively the dynamics between nanomagnets in a square lattice structure. The manipulation of the initial positions of nanomagnets via an external magnetic field and the movement of magnetic moments from one site to another are capable to create Boolean logic. Using the CA model we propose the design of logic gates, computing structures such as half adders and rewritable memory elements.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"163-172"},"PeriodicalIF":1.8,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10755125","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0