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Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-07 DOI: 10.1109/JPHOTOV.2025.3533883

Camden Kasik;Marko Jošt;Ishwor Khatri;Marko Topič;James Sites

{"title":"Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit","authors":"Camden Kasik;Marko Jošt;Ishwor Khatri;Marko Topič;James Sites","doi":"10.1109/JPHOTOV.2025.3533883","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3533883","url":null,"abstract":"Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. By comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"268-273"},"PeriodicalIF":2.5,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of Field-Exposed Photovoltaic Modules Featuring Signs of Contact Degradation

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-07 DOI: 10.1109/JPHOTOV.2025.3531052

Max Liggett;Dylan J. Colvin;Andrew Ballen;Manjunath Matam;Hubert P. Seigneur;Mengjie Li;Andrew M. Gabor;Philip J. Knodle;Craig J. Neal;Sudipta Seal;Daniel Riley;Bruce H. King;Peter Michael;Laura S. Bruckman;Roger H. French;Kristopher O. Davis

{"title":"Characterization of Field-Exposed Photovoltaic Modules Featuring Signs of Contact Degradation","authors":"Max Liggett;Dylan J. Colvin;Andrew Ballen;Manjunath Matam;Hubert P. Seigneur;Mengjie Li;Andrew M. Gabor;Philip J. Knodle;Craig J. Neal;Sudipta Seal;Daniel Riley;Bruce H. King;Peter Michael;Laura S. Bruckman;Roger H. French;Kristopher O. Davis","doi":"10.1109/JPHOTOV.2025.3531052","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3531052","url":null,"abstract":"This work investigates several photovoltaic (PV) modules that have shown signs of metal contact corrosion due to field exposure in a hot and humid climate. This includes two multicrystalline silicon aluminum back surface field systems with 10 and 14 years of exposure and one monocrystalline silicon passivated emitter and rear cell system with four years of exposure. A comprehensive, multiscale characterization process is used to evaluate these PV modules in great detail. Current–voltage (<inline-formula><tex-math>$I-V$</tex-math></inline-formula>), Suns-<inline-formula><tex-math>$V_{text{OC}}$</tex-math></inline-formula> measurements, electroluminescence imaging, infrared imaging, and ultraviolet fluorescence imaging were performed, and locations of interest were cored and analyzed using cross-sectional scanning electron microscopy (SEM). A rigorous, quantitative analysis procedure for the cross-sectional SEM images is proposed and implemented. Careful characterization does reveal that some of these PV modules do indeed exhibit the same classic signs of acetic-acid-based corrosion of the glass frit that is present at the silver/silicon interface, which have been observed previously in PV modules exposed to damp heat in an environmental chamber.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"233-243"},"PeriodicalIF":2.5,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Single Voltage Sensor Bypass Switch-Based Photovoltaic Fault Localization

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-07 DOI: 10.1109/JPHOTOV.2025.3530001

Ali Alhejab;Muhammad Abbasi;Shehab Ahmed

{"title":"A Single Voltage Sensor Bypass Switch-Based Photovoltaic Fault Localization","authors":"Ali Alhejab;Muhammad Abbasi;Shehab Ahmed","doi":"10.1109/JPHOTOV.2025.3530001","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3530001","url":null,"abstract":"Photovoltaic (PV) energy systems are becoming an important source of sustainable energy. However, undiscovered faults within these systems may cause significant efficiency reduction. Localizing these faults to the module level is important for a quick fault diagnosis and maintaining the overall system efficiency. This article presents a novel method to localize intrastring, line-ground, cross-string, and partial shading faults in an <inline-formula><tex-math>$N$</tex-math></inline-formula> × <inline-formula><tex-math>$M$</tex-math></inline-formula> PV system down to the module level. The approach utilizes a single voltage sensor in the combiner box of the PV system and <inline-formula><tex-math>$lceil N/2 rceil$</tex-math></inline-formula> bypass switches per string to bypass the connected PV modules during faults. The technique initially relies on identifying the faulty string. Once this string is determined, the voltage associated with each module in that string is found. Each module's voltage in that string is obtained by measuring the string voltage after bypassing each module corresponding to an activated switch. Subsequently, the resulting linear equations are solved to obtain the voltage of each module in the faulty string. The technique is verified using simulation and an experimental setup for a 5 x 4 small-size PV system. Experimental and simulation results demonstrate that the technique can accurately localize faulty modules with only <inline-formula><tex-math>$N$</tex-math></inline-formula> voltage samples of the faulty string. The proposed method is robust to variations in the maximum power point tracking algorithm, ensuring faults are localized effectively in real-time.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"362-372"},"PeriodicalIF":2.5,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrasonic Tinning of Al Busbars for a Silver-Free Rear Side on Bifacial Silicon Solar Cells

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-06 DOI: 10.1109/JPHOTOV.2025.3533901

Malte Brinkmann;Thomas Daschinger;Rolf Brendel;Henning Schulte-Huxel

{"title":"Ultrasonic Tinning of Al Busbars for a Silver-Free Rear Side on Bifacial Silicon Solar Cells","authors":"Malte Brinkmann;Thomas Daschinger;Rolf Brendel;Henning Schulte-Huxel","doi":"10.1109/JPHOTOV.2025.3533901","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3533901","url":null,"abstract":"Reducing the silver consumption of photovoltaics (PV) is a major aspect in recent solar cell research. For bifacial PERC+ solar cells silver is used for the front contact. On the rear side aluminum metallization provides the contact to the silicon. The native oxide of aluminum prohibits a standard soldering process. Therefore, rear side silver pads are typically used for the cell-to-cell interconnections with copper wires. Silver can be avoided when using ultrasonic soldering for wetting the aluminum metallization to form tin solder pads. We demonstrate mechanically stable soldering of interconnects to the silver-free solder pads with a median adhesion up to 3 N/mm. We observe a penetration of the native aluminum oxide layer by the ultrasonic tinning process and the formation of metal-to-metal contacts from the aluminum to the solder. Resistance measurements demonstrate a reduced series resistance of the ultrasonically prepared contact when compared with using silver pads. For PERC+ cells, we can thus fully avoid rear side silver pads for a standard stringing process to reduce the silver consumption by 20%–40%. We fabricate mini modules that reach the same efficiency as reference modules with standard silver pads on the rear. The efficiency degradation of the modules with the ultrasonic interconnection is less than 3.6% after 200 humidity-freeze cycles and less than 2.2% after 600 temperature cycles.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"244-251"},"PeriodicalIF":2.5,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation Study on the Impact of Miniaturization in 3 nm Node 3D Junctionless Transistors

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-02-06 DOI: 10.1109/TNANO.2025.3539457

Luca Scognamiglio;Fabrizio Mo;Chiara Elfi Spano;Marco Vacca;Gianluca Piccinini

{"title":"Simulation Study on the Impact of Miniaturization in 3 nm Node 3D Junctionless Transistors","authors":"Luca Scognamiglio;Fabrizio Mo;Chiara Elfi Spano;Marco Vacca;Gianluca Piccinini","doi":"10.1109/TNANO.2025.3539457","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3539457","url":null,"abstract":"Junctionless Nanosheet gate-all-around Field Effect Transistor (JL-NSGAAFET) is a promising technology characterized by the absence of any junctions between source-channel-drain. This absence allows to further scale down transistors while limiting short-channel effects. In this article, JL-NSGAAFET is explored as a potential candidate for the next 3 nm technology node through 3D TCAD simulations. First, we propose and simulate, through fabrication process simulations, a fabrication strategy for the JL-NSGAAFET compatible with the current manufacturing technology and based on the inversion mode NSGAAFET fabrication process. The high-k gate dielectric (HfO2) and metal-gate technology (TiN) are also adopted in the fabrication process to enhance the electrostatic gate control over the channel for the n-type and p-type transistors. Then, we perform electrical simulations of the device by also including drift-diffusion model and quantum density gradient correction. We characterize the device in terms of electrical performance and compare with the conventional NSGAAFET. Furthermore, to investigate the impact of the device scaling on the unwanted short channel effects, we simulate and analyze the devices while varying the gate length (LG) from 20 nm to 12 nm. Our reported simulation results prove that JL-NSGAAFET exhibits near-ideal subthreshold slope, low drain-induced barrier lowering (DIBL) and high on-to-off current ratio (ION/IOFF) with superior advantages of greater drive currents and a simpler fabrication process because of the absence of junctions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"102-109"},"PeriodicalIF":2.1,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143489269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluating the Potential of Polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As as Hole Contacts in Silicon Heterojunction Solar Cells

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-06 DOI: 10.1109/JPHOTOV.2024.3519616

David Quispe;Brendan Eng;Mijung Kim;Brian J. Coppa;Minjoo L. Lee;Zachary C. Holman

{"title":"Evaluating the Potential of Polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As as Hole Contacts in Silicon Heterojunction Solar Cells","authors":"David Quispe;Brendan Eng;Mijung Kim;Brian J. Coppa;Minjoo L. Lee;Zachary C. Holman","doi":"10.1109/JPHOTOV.2024.3519616","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3519616","url":null,"abstract":"The parasitic absorption of visible light in amorphous silicon layers can result in a short-circuit current density (<italic>Jsc) loss of up to 2 mA/cm2 for silicon heterojunction solar cells. To mitigate this issue, we explore the potential for polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As, both <italic>nonepitaxially deposited at 250 °C, to enable high <italic>Jsc while serving as alternative hole contacts to p-type amorphous silicon [a-Si:H(p)]. Using a suite of device characterization methods, we investigate how the passivation changes with the deposition of these III–V materials and their degree of hole selectivity. We identify that both Al0.25Ga0.75P and Al0.9Ga0.1As can still enable high implied open-circuit voltages >720 mV; however, they are not hole selective enough to enable high open-circuit voltage and fill factor. Ultimately, the best performing solar cells are limited to 9.6% and 10.8% efficiency with a nominal 5 nm of Al0.25Ga0.75P and a measured 13 nm of Al0.9Ga0.1As, respectively. However, both cells demonstrate higher <italic>Jsc than a reference cell with a-Si:H(p) that has a similar nominal thickness.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"223-232"},"PeriodicalIF":2.5,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of Encapsulation Processing Conditions on Degradation Mechanisms of Carbon-Based Perovskite Solar Cells

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-06 DOI: 10.1109/JPHOTOV.2025.3533909

Nikoleta Kyranaki;Cynthia Farha;Lara Perrin;Lionel Flandin;Emilie Planès;Lukas Wagner;David Martineau;Stéphane Cros

{"title":"Impact of Encapsulation Processing Conditions on Degradation Mechanisms of Carbon-Based Perovskite Solar Cells","authors":"Nikoleta Kyranaki;Cynthia Farha;Lara Perrin;Lionel Flandin;Emilie Planès;Lukas Wagner;David Martineau;Stéphane Cros","doi":"10.1109/JPHOTOV.2025.3533909","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3533909","url":null,"abstract":"Perovskite photovoltaic (PV) cells have achieved a record 26.7% efficiency, but improvements in stability against humidity, temperature shifts, and light exposure remain crucial. In this work, we explored mesoporous carbon-based perovskite (c-PSC) devices because of carbon's stability and the elimination of a heat-sensitive hole transport layer. Encapsulation materials exhibiting promising properties with silicon PV, including a thermoplastic polyolefin encapsulant, were applied under different lamination conditions to investigate the impact on c-PSC devices’ durability, which is a novel study for this specific combination of materials. Inadequate curing can compromise adhesion, reduce moisture resistance, and accelerate perovskite decomposition under light exposure. Increasing the lamination temperature by 20 °C allowed samples to withstand 1000 h of damp-heat conditions, with a 30% reduction in efficiency, while lower temperature lamination caused immediate performance drops. While light exposure remained highly degrading, higher lamination temperatures delayed damage, preserving 2.5% of the initial power conversion efficiency after 400 h of aging and slowing perovskite decomposition.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"261-267"},"PeriodicalIF":2.5,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conformal Printed High-Temperature Platinum-Rhodium Resistance Temperature Detector for Ceramic Bolts

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-02-05 DOI: 10.1109/JSEN.2025.3525522

Yuelong Li;Disheng Qiang;Fuxin Zhao;Lida Xu;Chenhe Shao;Yanzhang Fu;Qingtao Yang;Qinnan Chen;Chao Wu;Daoheng Sun

{"title":"Conformal Printed High-Temperature Platinum-Rhodium Resistance Temperature Detector for Ceramic Bolts","authors":"Yuelong Li;Disheng Qiang;Fuxin Zhao;Lida Xu;Chenhe Shao;Yanzhang Fu;Qingtao Yang;Qinnan Chen;Chao Wu;Daoheng Sun","doi":"10.1109/JSEN.2025.3525522","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3525522","url":null,"abstract":"The operation temperature detection of high-temperature hot-end components in aerospace and other fields is of great significance for operational safety; however, the higher working temperature and noninvasive in situ measurement of temperature detectors currently face significant challenges. Here, the platinum-rhodium (PtRh) conformal resistance temperature detector (CRTD) was proposed, the structure and preparation process was elaborated, and the aging sintering process of the film was explored to form a stable conductive network with high porosity. The dense surface and cross-sectional characteristics of the film were demonstrated, the lattice characteristic of PtRh was demonstrated, and the composition and valence states of the elements were characterized in detail. The high-temperature testing system was built, and the test results showed that the developed PtRh CRTD could achieve dynamic temperature detection at <inline-formula> <tex-math>$1200~^{circ }$ </tex-math></inline-formula>C, with a linear fitting goodness of 0.99834. The resistance drift rate of the 31 h high-temperature durability test was 1.11%/h, and the maximum full-scale error was 1.58%FS. Furthermore, the PtRh high-temperature conformal ceramic bolt was prepared and subjected to thermal shock testing. The results showed that it more accurately reflects the temperature of the structural component itself than the discrete surface mount temperature measurement method, providing a feasible solution for in situ detection of complex curved high-temperature hot-end components.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 5","pages":"8016-8023"},"PeriodicalIF":4.3,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143553189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reconfigurable Multiband Co-Planar Nested Electromagnetically Induced Transparent Metamaterial Based on Dual Modulation

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-02-05 DOI: 10.1109/TPS.2025.3533550

Jingjing Liang;Bin Li;Li Zhang;Shuhui Yang;Yuxuan Yuan;Rui Meng;Chenyin Yu;Kaili Huo;Yahui Hou;Zihao Fu

{"title":"Reconfigurable Multiband Co-Planar Nested Electromagnetically Induced Transparent Metamaterial Based on Dual Modulation","authors":"Jingjing Liang;Bin Li;Li Zhang;Shuhui Yang;Yuxuan Yuan;Rui Meng;Chenyin Yu;Kaili Huo;Yahui Hou;Zihao Fu","doi":"10.1109/TPS.2025.3533550","DOIUrl":"https://doi.org/10.1109/TPS.2025.3533550","url":null,"abstract":"A multiband co-planar nested electromagnetically induced transparency (EIT) metamaterial based on dual modulation of vanadium dioxide (VO2) and graphene is proposed. The single-layer structure comprises a pair of metallic T-type resonators (TRSs), a pair of VO2-TRS with equal size, and a centrally positioned crossed graphene layer. These three layers of TRS with varying sizes undergo bight-bight coupling, enabling efficient modulation of the three-band EIT-like effect through the combination of VO2 and graphene. Moreover, three distinct modulation mechanisms in the hybrid EIT metamaterials are revealed: 1) the number of EIT windows decreases as the surface temperature falls in the VO2-TRS integration; 2) the centrosymmetry is broken during the I-shaped graphene integration process, allowing dynamic control of EIT switching and transmission strength under different polarization incidences; 3) redistribution of the surface electric field in the crossed graphene layer. The three EIT windows close one by one as the Fermi level increases with a maximum modulation depth (MD) of 89.4%. The designed structure achieves a maximum transmission coefficient of 0.95 and a maximum group delay of 27.6 ps in the terahertz (THz) band, indicating excellent transmission performance and slow-light characteristics. This work demonstrates the potential application of multiband THz slow-light devices and modulators.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 2","pages":"351-360"},"PeriodicalIF":1.3,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143512938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Particle-in-Cell Simulations of Injection Locking for S-Band Oven Magnetron Using Ultralow Energy

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-02-04 DOI: 10.1109/TPS.2025.3532985

Wenlong Li;Hailong Li;Yu Qin;Wanshan Hou;Haixia Liu;Shibin Xu;Yun Zhang;Xiangwei Tang;Liangjie Bi;Bin Wang;Yong Yin;Lin Meng

{"title":"Particle-in-Cell Simulations of Injection Locking for S-Band Oven Magnetron Using Ultralow Energy","authors":"Wenlong Li;Hailong Li;Yu Qin;Wanshan Hou;Haixia Liu;Shibin Xu;Yun Zhang;Xiangwei Tang;Liangjie Bi;Bin Wang;Yong Yin;Lin Meng","doi":"10.1109/TPS.2025.3532985","DOIUrl":"https://doi.org/10.1109/TPS.2025.3532985","url":null,"abstract":"A novel coaxial-line injection-locked magnetron structure for an S-band microwave oven has been proposed, and simulation analysis has been conducted. The magnetron is regarded as a highly efficient orthogonal-field oscillator, with an injection port directly opened on the wall of its resonant cavity. It is coupling a certain amount of power into the interaction space through a coaxial line. The injection power is set at 32 W. During the start-up phase of the magnetron, the electron flow undergoes pre-modulation due to the influence of the injected small signal. When the injection duration is 20 ns, the maximum locking range is 3 MHz. The magnetron’s output signal is successfully locked by the external injection signal. The new structure combined with the short-time injection method achieves an ultralow energy injection-locking effect. Compared with the 10-ms pulse time of the traditional magnetron, the locking energy of this method is only 0.02. When the injection power is set to 200 W, the locking range extends to 8 MHz. In the locked state, changing the initial phase of the injected signal does not affect the phase difference between the output signal and the injected signal. The phase difference remains almost unchanged at the same frequency. This provides the possibility of controlling the frequency and phase of multiple magnetron arrays through single-channel injection in the future. This injection method can meet the array application requirements of magnetrons for ovens.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 2","pages":"245-251"},"PeriodicalIF":1.3,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143512958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0