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CNN-Based Data Processing for Enhanced Detection of Small Targets in Sea Clutter 基于cnn的海杂波小目标增强检测数据处理

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-08-13 DOI: 10.1109/JSEN.2025.3596263

Shuangyu Xu;Zhihang Wang;Zishu He

{"title":"CNN-Based Data Processing for Enhanced Detection of Small Targets in Sea Clutter","authors":"Shuangyu Xu;Zhihang Wang;Zishu He","doi":"10.1109/JSEN.2025.3596263","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3596263","url":null,"abstract":"Detecting small targets within intricate sea clutter presents a formidable challenge. In previous methods, convolutional neural network (CNN)-based detectors have relied on handcrafted features extracted through the manual data processing, which may not fully capture the discriminative features necessary to distinguish targets from sea clutter. This article introduces a novel method of target detection that utilizes CNN-based data processing to directly handle raw data. The proposed CNN-based data processing can automatically extract higher level features from signals, which are often more discriminative and valuable for subsequent detection. The two-stage design of our method allows for the easy replacement of more advanced CNN-based detectors in future applications, providing flexibility for future improvements. Experimental results demonstrate that our method achieves probabilities of detection (PDs) of 0.9008 and 0.8433 on the IPIX and SDRDSP datasets, respectively, with a probability of false alarm (PFA) of 0.001, substantially surpassing other methods. The total FLOPs of our method are 206.42M, making it suitable for real-time applications. Further experiments confirm that our proposed CNN-based data processing can enhance various CNN-based detectors across different datasets, showcasing robustness and effectiveness. Moreover, our method maintains high detection performance even with a limited number of pulses.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 18","pages":"35585-35596"},"PeriodicalIF":4.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Regional Identification of Breast Tumors Using Multichannel Bioimpedance Spectroscopy 利用多通道生物阻抗谱技术进行乳腺肿瘤的区域识别

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-08-13 DOI: 10.1109/JSEN.2025.3596237

Yuanjing Zhang;Shuai Li;Jie He;Yang Wu;Hao Wang;Kai Liu;Jiafeng Yao

{"title":"Regional Identification of Breast Tumors Using Multichannel Bioimpedance Spectroscopy","authors":"Yuanjing Zhang;Shuai Li;Jie He;Yang Wu;Hao Wang;Kai Liu;Jiafeng Yao","doi":"10.1109/JSEN.2025.3596237","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3596237","url":null,"abstract":"A multichannel bioimpedance spectroscopy (MC-BIS) method is proposed for regional identification of breast tumors. First, the sensor is partitioned to scan the breast across nine subregions, and an empty-field calibration algorithm is applied to normalize the impedance spectra. Next, numerical simulations are conducted to investigate the relationship between the electrical characteristics of unifocal tumors and their regional distribution. Subsequently, the performance of three classifiers—support vector machine (SVM), random forest (RF), and feedforward neural network (FNN)—is evaluated for bifocal tumor localization. The simulation results indicate significant differences in the impedance characteristics between tumor regions and normal tissue regions (<inline-formula> <tex-math>${P} lt 0.001$ </tex-math></inline-formula>). When a tumor is present in a subregion, the corresponding imaginary part relaxation impedance <inline-formula> <tex-math>${Z} _{text {imag-relax}}$ </tex-math></inline-formula> exceeds <inline-formula> <tex-math>$2.004~Omega $ </tex-math></inline-formula>. For bifocal breast tumor localization, the FNN classifier achieved the best performance, with a classification accuracy of 95.46% through fivefold cross-validation. To validate the simulation results, biological tissues with distinct electrical properties were selected to simulate tumor and normal tissue. The experimental accuracy reached 86.94%. The MC-BIS method enables rapid and accurate localization of tumor regions, providing a new technological approach for early screening and diagnosis of breast cancer.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 18","pages":"35438-35446"},"PeriodicalIF":4.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Special Issue on Plenary, Invited, Workshop on Pulsed Power for Fusion from PPPS-2025 来自PPPS-2025的聚变脉冲功率研讨会全体会议特刊

IF 1.5 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-08-13 DOI: 10.1109/TPS.2025.3592812

引用次数: 0

Special Issue on Pulsed Power Science and Technology 脉冲功率科学与技术专刊

IF 1.5 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-08-13 DOI: 10.1109/TPS.2025.3592808

引用次数: 0

Detection of Proton Irradiation Damage in 4H-SiC Schottky Diodes Via Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance 利用电探测磁共振和近零场磁电阻检测质子辐照损伤的4H-SiC肖特基二极管

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-12 DOI: 10.1109/TDMR.2025.3597973

Dustin T. Hassenmayer;Patrick M. Lenahan;Edward S. Bielejec;Joshua M. Young;David J. Spry

{"title":"Detection of Proton Irradiation Damage in 4H-SiC Schottky Diodes Via Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance","authors":"Dustin T. Hassenmayer;Patrick M. Lenahan;Edward S. Bielejec;Joshua M. Young;David J. Spry","doi":"10.1109/TDMR.2025.3597973","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3597973","url":null,"abstract":"We utilize Electrically Detected Magnetic Resonance (EDMR) and Near-Zero-Field Magnetoresistance (NZFMR) to identify the physical and chemical nature of atomic scale defects generated by proton bombardment of 4H-SiC Schottky diodes. We use EDMR and NZFMR to explore proton irradiation created deep level defects which contribute to trap-assisted tunneling through the Schottky barrier. We measure the spin-dependent response of the deep level defect for both an irradiated and unirradiated diode to compare the effects that proton irradiation has on device performance. We observe that the unirradiated diode has no response, and the irradiated diode has a large response. The maximum change in current (<inline-formula> <tex-math>$Delta {I}$ </tex-math></inline-formula>/I) due to NZFMR is 0.44% which occurs at 1.3V forward bias. The nature of the response is consistent with several reports of spin-dependent trap-assisted tunneling (SDTAT) [11, 15, 23, 24]. The EDMR response has an isotropic g-value of 2.003 and is ~10G wide. We tentatively ascribe this response to a negatively charged silicon vacancy (<inline-formula> <tex-math>${mathrm {V}}_{text {Si-}}$ </tex-math></inline-formula>). Our work shows that EDMR and NZFMR have the sensitivity and analytical power to study the physical and chemical nature of point defects caused by particle irradiation in these devices. More Importantly, it suggests that these techniques may be widely applicable to investigations of particle irradiation on semiconductor devices.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"394-400"},"PeriodicalIF":2.3,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability 具有高输出功率和热可靠性的烧结银基直接冷却igbt

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-12 DOI: 10.1109/TDMR.2025.3598012

Bowen Zhang;Xinyan Lu;Yibin Sun;Youzheng Wang;Yun-Hui Mei

{"title":"Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability","authors":"Bowen Zhang;Xinyan Lu;Yibin Sun;Youzheng Wang;Yun-Hui Mei","doi":"10.1109/TDMR.2025.3598012","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3598012","url":null,"abstract":"The heat generated by IGBT modules during DC/AC power conversion requires the development of highly efficient direct-cooled thermal dissipation structures. Herein, direct-cooled IGBTs are realized using sintered silver (Ag) as the thermal interface materials (TIMs) between DBC substrate and heat sink. The high thermal homogeneity of Sintered Ag-IGBTs is first confirmed by the thermal performance differences derived from finite element simulations. The heat transfer advantage of sintered Ag enables fast thermal conduction from chip to heat sink, thus reducing the dynamic switching losses of Sintered Ag-IGBTs by 26%. Compared to SAC 305-IGBTs, the output current of Sintered Ag-IGBTs increased from 812 A to 848 A under the same driving conditions. Due to the low interfacial thermal resistance of sintered silver, the average thermal resistance reduction of 11.9% and the average chip junction temperature reduction of <inline-formula> <tex-math>$5.5~^{circ }$ </tex-math></inline-formula>C are realized in Sintered Ag-IGBTs. The high output power and thermal reliability of direct-cooled IGBTs are expected to facilitate their high-power density applications.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"734-741"},"PeriodicalIF":2.3,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a New Around-the-Ear Electroencephalography Device for Passive Brain–Computer Interface Applications 一种用于被动脑机接口的新型围耳式脑电图仪的研制

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-08-12 DOI: 10.1109/JSEN.2025.3596292

Minsu Kim;Eunkyu Oh;Yoosung Kim;Seonho Kim;Dasom Park;Jung-Hwan Kim;Suhye Kim;Hyunjin Ahn;Chang-Hwan Im

{"title":"Development of a New Around-the-Ear Electroencephalography Device for Passive Brain–Computer Interface Applications","authors":"Minsu Kim;Eunkyu Oh;Yoosung Kim;Seonho Kim;Dasom Park;Jung-Hwan Kim;Suhye Kim;Hyunjin Ahn;Chang-Hwan Im","doi":"10.1109/JSEN.2025.3596292","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3596292","url":null,"abstract":"As interest in passive brain–computer interface (pBCI) technology for everyday applications increases, the development of practical wearable electroencephalography (EEG) recording devices has become increasingly essential. Among the various form factors to implement wearable EEG systems, ear-EEG is frequently employed owning to its usefulness in everyday scenarios. In this study, a new wearable around-the-ear EEG recording device for pBCI applications was developed. The performance of the developed device was validated through two pBCI experiments. During the ear-EEG device design, an alpha attenuation test was conducted to determine the optimal location of a pair of EEG electrodes. The two practical pBCI applications tested in this study were the prediction of users’ preferences for short video clips and drowsiness detection during online learning. The experimental results showed an accuracy of 85.71% in terms of preference prediction and a success rate of 80% in terms of drowsiness detection, effectively demonstrating the practicality of the newly developed around-the-ear EEG device for daily life scenarios.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 18","pages":"34226-34235"},"PeriodicalIF":4.3,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11123617","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced Charger Placement Strategies in Sensor Networks Using Graph Theory and Evolutionary Algorithms 基于图论和进化算法的传感器网络充电器布局策略

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-08-12 DOI: 10.1109/JSEN.2025.3596399

P. Neelagandan;S. Balaji;R. Pavithra

{"title":"Advanced Charger Placement Strategies in Sensor Networks Using Graph Theory and Evolutionary Algorithms","authors":"P. Neelagandan;S. Balaji;R. Pavithra","doi":"10.1109/JSEN.2025.3596399","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3596399","url":null,"abstract":"Efficient recharging of sensors is essential to ensure uninterrupted operation across a wide range of applications, and the strategic placement of chargers plays a crucial role in achieving this objective. This article addresses the optimization of wireless sensor recharging by focusing on two key phases: determining the minimum number of chargers required and identifying their optimal placement. In the first phase, the minimum number of chargers is determined using the Grundy coloring algorithm (GCA). In the second phase, the blackhole algorithm is applied to optimally position the chargers, aiming to maximize coverage and minimize redundancy. The effectiveness of the proposed method was validated through simulation experiments. Performance comparisons were conducted between the blackhole algorithm, which achieved 98.15% coverage including Haar (95.85%), Daubechies 2 (95.50%), Biorthogonal (96.01%), Symlets 8 (95.98%) wavelets, and the raindrop algorithm (96.24%). The results indicate that the proposed algorithm outperforms these methods in terms of coverage efficiency and optimal charger deployment, highlighting its potential for significantly enhancing the recharging process in wireless sensor networks.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 18","pages":"35609-35621"},"PeriodicalIF":4.3,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Surface Plasmon Resonance Sensor for Pathogenic Cancer Detection Using Ag/Si/EuS Layers 用于银/硅/EuS层致病性癌症检测的高性能表面等离子体共振传感器

IF 1.5 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-08-12 DOI: 10.1109/TPS.2025.3596079

Gundala Vasanthi;Balaji Ramachandran;Yesudasu Vasimalla;Santosh Kumar

{"title":"High-Performance Surface Plasmon Resonance Sensor for Pathogenic Cancer Detection Using Ag/Si/EuS Layers","authors":"Gundala Vasanthi;Balaji Ramachandran;Yesudasu Vasimalla;Santosh Kumar","doi":"10.1109/TPS.2025.3596079","DOIUrl":"https://doi.org/10.1109/TPS.2025.3596079","url":null,"abstract":"A mutation in a gene’s DNA sequence that makes a person prone to or already afflicted with a certain genetic illness or condition, like cancer. The initial discovery of this cancer with a low-cost and highly sensitive device is required. Therefore, this article explores the recital analysis of a novel surface plasmon resonance (SPR) sensor for pathogenic cancer employing silver (Ag), silicon (Si), and europium sulfide (EuS). To design this sensor, we use the Kretschmann configuration, where Ag is deposited over the surface area of the prism in order to excite the surface plasmons. To protect the Ag layer from oxidization in addition to enhancing the sensor’s performance, Si and EuS are placed over Ag successively. The proposed sensor’s performance is evaluated based on sensitivity (S), quality factor (QF), and detection accuracy (DA), utilizing the transfer matrix method (TMM) in conjunction with the angular interrogation technique at a wavelength of 633 nm. The findings indicate that the highest achieved sensing parameters are a sensitivity of 290.63°/RIU, a QF of <inline-formula> <tex-math>$98.58~{mathrm {RIU}}^{-1}$ </tex-math></inline-formula>, and a DA of 4.04. Subsequently, the required standard fabrication steps are discussed to reproduce the proposed sensor experimentally. In conclusion, a comparative analysis of the performance between the proposed work and existing work has been presented at the end.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 9","pages":"2393-2400"},"PeriodicalIF":1.5,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Voltage Pulse Modulator for S-Band Klystron in IR-FEL RF System IR-FEL射频系统中s波段速调管的高压脉冲调制器

IF 1.5 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-08-12 DOI: 10.1109/TPS.2025.3581073

Akhil Patel;Manmath Kumar Badapanda;T. Reghu;Ramesh Kumar;Prashant Khare

{"title":"High-Voltage Pulse Modulator for S-Band Klystron in IR-FEL RF System","authors":"Akhil Patel;Manmath Kumar Badapanda;T. Reghu;Ramesh Kumar;Prashant Khare","doi":"10.1109/TPS.2025.3581073","DOIUrl":"https://doi.org/10.1109/TPS.2025.3581073","url":null,"abstract":"A high-power S-band klystron based RF system has been developed at the Raja Ramanna Centre for Advanced Technology (RRCAT), Indore, to meet the RF power requirements of the infrared free-electron laser (IR-FEL) facility. The modulator employs a line-type topology comprising a high-voltage pulse-forming network (PFN), charging power supply, a thyratron switch, a pulse transformer (PT), a programmable logic controller (PLC) based interlock system, and an S-band klystron. This article presents a comprehensive mathematical analysis of the deQing-based resonant charging system and compares it with conventional analysis. The results indicate that conventional analysis tends to overestimate pulse-to-pulse PFN voltage regulation. A mathematical expression for determining the inductance of a tunable PFN inductor is derived and validated by experimental measurements. Additionally, this article compares air-insulated and oil-immersed modulators, providing key design insights to aid in selecting the optimal configuration. The design details of other essential modulator components are also presented. During initial commissioning, the system achieved a peak RF power of 15 MW with a pulsewidth of <inline-formula> <tex-math>$12~mu $ </tex-math></inline-formula>s at a repetition rate of 5 Hz.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 9","pages":"2314-2322"},"PeriodicalIF":1.5,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0