IEEE open journal of power electronics最新文献

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Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels 高注入水平下高压硅和SiC NPN BJT中电荷瞬态动力学
IF 5
IEEE open journal of power electronics Pub Date : 2025-01-08 DOI: 10.1109/OJPEL.2025.3527210
Mana Hosseinzadehlish;Saeed Jahdi;Konstantinos Floros;Ingo Ludtke;Xibo Yuan
{"title":"Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels","authors":"Mana Hosseinzadehlish;Saeed Jahdi;Konstantinos Floros;Ingo Ludtke;Xibo Yuan","doi":"10.1109/OJPEL.2025.3527210","DOIUrl":"https://doi.org/10.1109/OJPEL.2025.3527210","url":null,"abstract":"This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics. The measurements are performed with a DC-link voltage of 800 V at peak collector current of 14 A. A range of base currents modulated by base resistors are employed with two load inductors to enable a wide range of switching conditions at different switching rates. The TCAD model is validated by comparing with datasheet while double-pulse switching events have delivered the experimental switching transients. In the Silicon BJT case, the device is shown to exhibit very significant turn-off delays compared to 4H-SiC BJTs, particularly under high-level injection conditions. The absence of delay in 4H-SiC BJTs is due to the lower minority carrier lifetime and thinner base region, enabling higher DC gain and significantly faster transients. However, the current drop phenomenon is clearly seen in the 4H-SiC BJT in both measurements and TCAD modelling, which unlike the Silicon, is very sensitive to the peak collector current at HLI for a fixed base current due to its thinner base and more susceptance to the Early effect. The Silicon BJT does not exhibit such trend, given its wide base region, though its inability to eliminate the depletion regions at on-state with HLI is demonstrated by rise of voltage while still conducting, as demonstrated by TCAD and measurements.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"162-175"},"PeriodicalIF":5.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10833858","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Adaptive Control of a Hybrid Microgrid With Energy Storage System 混合微电网储能系统的自适应控制
IF 5
IEEE open journal of power electronics Pub Date : 2025-01-08 DOI: 10.1109/OJPEL.2025.3526929
M. A. Ebrahim;Ali M. El-Rifaie;Bassant Ahmed Bahr;H. E. Keshta;Mahmoud N. Ali;M. M. R. Ahmed
{"title":"Adaptive Control of a Hybrid Microgrid With Energy Storage System","authors":"M. A. Ebrahim;Ali M. El-Rifaie;Bassant Ahmed Bahr;H. E. Keshta;Mahmoud N. Ali;M. M. R. Ahmed","doi":"10.1109/OJPEL.2025.3526929","DOIUrl":"https://doi.org/10.1109/OJPEL.2025.3526929","url":null,"abstract":"The growing integration of Renewable Energy Resources (RER) and Energy Storage Systems (ESSs) into Hybrid Microgrids (HμGs) downsizes the system inertia that reduces the system ability to maintain the frequency and voltage within the standard levels. To tackle this challenge and enhance the dynamic response of HμGs, PID based model reference adaptive control (MRAC), for the synchronous generator (SG) is applied in this paper. Also, the effect of ESSs on enhancing the system dynamic performance is investigated. The emergence of super capacitor (SC) is suggested to emulate the dynamic inertia response. The SG's adaptive control enables immediate modifications to optimize HμGs frequency, while the rapid response of ESSs stabilizes and supports power generation variations to operate HμGs steadily and overcome the problem of interruptions between load and supply. These combined technologies work together to enhance the dynamic stability of the proposed two-area HμGs system during standalone operation. Advanced metaheuristic optimization techniques are utilized to determine the optimal gains for SC and battery controllers, as well as for MRAC of SG. The obtained results prove the efficacy of the super capacitor and the proposed adaptive control strategy in improving the frequency of HμGs during standalone operation.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"196-211"},"PeriodicalIF":5.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10833776","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Discretized Impedance-Based Modeling of Converter-Interfaced Energy Resources for State-Variable-Based Real-Time EMT Simulators 基于状态变量的实时EMT仿真器变换器接口能量的离散阻抗建模
IF 5
IEEE open journal of power electronics Pub Date : 2025-01-03 DOI: 10.1109/OJPEL.2024.3525019
Taleb Vahabzadeh;Seyyedmilad Ebrahimi;Juri Jatskevich
{"title":"Discretized Impedance-Based Modeling of Converter-Interfaced Energy Resources for State-Variable-Based Real-Time EMT Simulators","authors":"Taleb Vahabzadeh;Seyyedmilad Ebrahimi;Juri Jatskevich","doi":"10.1109/OJPEL.2024.3525019","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3525019","url":null,"abstract":"Modern power systems are experiencing high penetration of voltage-source converter (VSC)-interfaced distributed energy resources and loads. Design, analysis, and reliable operation of such systems require extensive offline and real-time electromagnetic transient (EMT) simulations. This paper proposes discretized impedance-based modeling (DIBM) of VSCs for efficient time-domain transient analysis in state-variable (SV)-based EMT simulators. Specifically, the VSC-based systems are first represented as admittance-based models in Laplace domain, and then they are discretized and formulated to construct a Thévenin equivalent impedance matrix and history voltages that can be interfaced seamlessly with external systems in SV-based simulators. By replacing VSC subsystems with Thévenin equivalent circuits, the proposed DIBM technique significantly reduces the number of states and eliminates the need for fictitious snubbers that may be needed in SV-based EMT simulators for compatible interfacing. The effectiveness of the proposed DIBM approach over the conventional method that uses average value models of VSCs is demonstrated on a seven-bus VSC-based system in offline (MATLAB Simscape Electrical) and real-time (OPAL-RT) EMT simulators. It is verified that the proposed method enables high accuracy and larger simulation time steps while also significantly improving the overall computational performance.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"212-227"},"PeriodicalIF":5.0,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10820985","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband High Frequency Power Conversion With Frequency-Tuning Matching Network 带频率调谐匹配网络的宽带高频功率转换
IF 5
IEEE open journal of power electronics Pub Date : 2024-12-31 DOI: 10.1109/OJPEL.2024.3524372
ZHECHI YE;Juan Rivas
{"title":"Broadband High Frequency Power Conversion With Frequency-Tuning Matching Network","authors":"ZHECHI YE;Juan Rivas","doi":"10.1109/OJPEL.2024.3524372","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3524372","url":null,"abstract":"Varying load impedances challenge high-frequency resonant converter operation, but existing matching network solutions are typically slow, lossy, or complex in design. We propose a novel general method to design matching networks that can match a varying impedance to a near-constant value by adjusting only the frequency. To drive the proposed frequency-tuning matching network (FTMN), we present a systematic approach to designing broadband power inverters that can be applied to various topologies. We demonstrate two broadband power converters with a class-E and a class-\u0000<inline-formula><tex-math>$Phi _{2}$</tex-math></inline-formula>\u0000 topology, respectively. With the FTMN, both converters can achieve around 90% efficiency when driving a varying plasma load impedance with a tuning frequency of around 13.56 MHz.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"120-129"},"PeriodicalIF":5.0,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10818739","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithically Integrated and Galvanically Isolated GaN Gate Driver 单片集成和电隔离GaN栅极驱动器
IF 5
IEEE open journal of power electronics Pub Date : 2024-12-30 DOI: 10.1109/OJPEL.2024.3523676
Michael Basler;Richard Reiner;Daniel Grieshaber;Fouad Benkhelifa;Stefan Mönch
{"title":"Monolithically Integrated and Galvanically Isolated GaN Gate Driver","authors":"Michael Basler;Richard Reiner;Daniel Grieshaber;Fouad Benkhelifa;Stefan Mönch","doi":"10.1109/OJPEL.2024.3523676","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3523676","url":null,"abstract":"In this work, a novel monolithically integrated and galvanically isolated GaN gate driver is presented, which combines the separated power and data link of conventional Si-based solutions. The core is an integrated spiral transformer, which is driven on the primary side by a VHF class-D oscillator with on-off keying modulated by the PWM signal. On the secondary side, the signal is rectified and a network ensures the correct off-state. The driver was operated with PWM signals of up to 2 MHz with only one supply voltage of 8 V on the primary side. This GaN IC shows the potential to be integrated with the power transistor in the future to provide a highly compact isolated driver solution on chip.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"144-149"},"PeriodicalIF":5.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10818573","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Comparison of Current Limiting Algorithms in Grid-Forming Inverter in Terms of Transient Stability 从暂态稳定性角度对成网逆变器限流算法的理论比较
IF 5
IEEE open journal of power electronics Pub Date : 2024-12-18 DOI: 10.1109/OJPEL.2024.3520111
Dai Orihara;Hisao Taoka;Hiroshi Kikusato;Jun Hashimoto;Kenji Otani;Rahman Khaliqur;Ustun Taha Selim
{"title":"Theoretical Comparison of Current Limiting Algorithms in Grid-Forming Inverter in Terms of Transient Stability","authors":"Dai Orihara;Hisao Taoka;Hiroshi Kikusato;Jun Hashimoto;Kenji Otani;Rahman Khaliqur;Ustun Taha Selim","doi":"10.1109/OJPEL.2024.3520111","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3520111","url":null,"abstract":"Grid-forming (GFM) inverters enable inverter-based resources to act as voltage sources, providing support to power systems. They are anticipated to serve as a technology capable of replacing synchronous generators. However, during a fault, it is crucial to implement a function that limits their output current to prevent short circuit currents from exceeding their capacity. This raises concerns about the potential deterioration of transient stability in the power system. The influence of current limiting on transient stability depends on the current-limiting methodology. However, comprehensive theoretical evaluations are still lacking. This paper presents the theoretical evaluation of the influence of current limiting on transient stability for various current limitation algorithms. Accordingly, an equivalent virtual impedance (EVI) is proposed as a universal metric. EVI represents an impedance virtually assumed between the voltage source simulated in GFM control and the connection point of the inverter, and is computed so that the current through the EVI matches the limited output current. The transient stability is then assessed for various current-limiting algorithms based on the electric circuit characteristic of EVI. Finally, time-domain simulation is conducted to evaluate the consistency of the assessment.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"109-119"},"PeriodicalIF":5.0,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10806746","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-Path High-Resolution Digital PWM Architectures With Cascadability of Delay Lines 具有延迟线级联性的单路径高分辨率数字PWM架构
IF 5
IEEE open journal of power electronics Pub Date : 2024-12-18 DOI: 10.1109/OJPEL.2024.3519877
Marziyeh Hajiheidari;Joel Fushekati;Mohammad Emad;Bas J. D. Vermulst;Jeroen van Duivenbode;Henk Huisman
{"title":"Single-Path High-Resolution Digital PWM Architectures With Cascadability of Delay Lines","authors":"Marziyeh Hajiheidari;Joel Fushekati;Mohammad Emad;Bas J. D. Vermulst;Jeroen van Duivenbode;Henk Huisman","doi":"10.1109/OJPEL.2024.3519877","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3519877","url":null,"abstract":"This paper introduces two new single-path and cascaded High-Resolution Digital Pulse Width Modulation (HRDPWM) architectures. The proposed single-path architecture uses fewer FPGA resources to achieve the same resolution as conventional dual-path architectures. Moreover, the generated HRDPWM signal is independent of the Place-And-Route (PAR) algorithm applied by the synthesis tool, as well as temperature and voltage variations. The proposed cascaded architecture can be used to increase the DPWM resolution without raising the system clock frequency or, alternatively, to reduce the FPGA system clock frequency (relaxing timing challenges) without lowering the resolution. Both architectures have been implemented and verified using a mid-range Artix-7 FPGA with both triangular and sawtooth carriers. A time resolution of 39 ps has been achieved for the cascaded HRDPWM architecture with a sawtooth carrier and a system clock of 400 MHz. Additionally, a GaN-based synchronous buck converter is designed and implemented to evaluate the performance of the proposed HRDPWM architectures in a real application. It is demonstrated that bothhldead time and duty cycle can be modified with high accuracy and resolution and updated twice per switching cycle.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"130-143"},"PeriodicalIF":5.0,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10806584","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Power Electronics Society Information IEEE 电力电子学会信息
IF 5
IEEE open journal of power electronics Pub Date : 2024-12-16 DOI: 10.1109/OJPEL.2024.3500895
{"title":"IEEE Power Electronics Society Information","authors":"","doi":"10.1109/OJPEL.2024.3500895","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3500895","url":null,"abstract":"","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"C2-C2"},"PeriodicalIF":5.0,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10803120","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Open Journal of Power Electronics Information for Authors IEEE Open Journal of Power Electronics(《电气和电子工程师学会电力电子学开放期刊》)作者须知
IF 5
IEEE open journal of power electronics Pub Date : 2024-12-16 DOI: 10.1109/OJPEL.2024.3500897
{"title":"IEEE Open Journal of Power Electronics Information for Authors","authors":"","doi":"10.1109/OJPEL.2024.3500897","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3500897","url":null,"abstract":"","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"C3-C3"},"PeriodicalIF":5.0,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10803119","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extending the Steinmetz Equation: Incorporating Mechanical Stress Effects in Ferrite Core Loss Calculations 扩展Steinmetz方程:将机械应力效应纳入铁氧体铁芯损耗计算
IF 5
IEEE open journal of power electronics Pub Date : 2024-12-11 DOI: 10.1109/OJPEL.2024.3515798
Jannik Schäfer;Gwendolin Rohner;Johann W. Kolar
{"title":"Extending the Steinmetz Equation: Incorporating Mechanical Stress Effects in Ferrite Core Loss Calculations","authors":"Jannik Schäfer;Gwendolin Rohner;Johann W. Kolar","doi":"10.1109/OJPEL.2024.3515798","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3515798","url":null,"abstract":"This paper extends the Generalized Steinmetz Equation (GSE) to account for the influence of mechanical stress on ferrite core losses. Experimental measurements are used to quantify the effects of compressive and tensile stresses on the relative permeability and the core losses of different ferrite materials. Mechanical stress is found to significantly affect the core losses, depending on the relative orientation of the magnetic flux density and the applied mechanical stress. Specifically, the losses monotonically increase when the flux and compressive stress vectors are parallel, while perpendicular vectors lead to a more complex response depending on the level of mechanical stress. The measured loss characteristics are translated in an extension of the GSE (X-GSE), which is validated for different ferrite materials, and provides a useful tool for a first rough estimation of the core losses under mechanical stresses. Finally, FEM simulations demonstrate how thermally induced mechanical stresses in a ferrite core can redistribute the magnetic flux and therefore impact the resulting core losses, which underlines the importance of considering the stress dependence of core losses in ferrite, especially in the development of magnetic components to be encapsulated in incompressible materials.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":"6 ","pages":"56-65"},"PeriodicalIF":5.0,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10792929","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142875085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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