IEEE open journal of power electronics最新文献

Fast and Accurate Data Sheet Based Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge 基于数据表的碳化硅 MOSFET 和肖特基二极管半桥快速精确开关损耗分析模型

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IEEE open journal of power electronics Pub Date : 2024-10-24 DOI: 10.1109/OJPEL.2024.3485891

Anliang Hu;Jürgen Biela

{"title":"Fast and Accurate Data Sheet Based Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge","authors":"Anliang Hu;Jürgen Biela","doi":"10.1109/OJPEL.2024.3485891","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3485891","url":null,"abstract":"Fast and accurate switching loss models that can be used for different devices are crucial for optimization-based converter design. This paper proposes a novel data sheet based, fully analytical loss model for a SiC MOSFET and Schottky diode half-bridge including parasitics. In the model, nonlinear device characteristics are approximated by multi-step piecewise constants. Furthermore, a small number of assumptions are used to derive and to solve the approximated nonlinear differential equations for obtaining the switching losses. To evaluate the model, a new accuracy measure is proposed for a fair accuracy comparison with existing models. The proposed model is also comprehensively verified by double pulse tests using 5 SiC MOSFET (with different structures) and Schottky diode pairs from different manufacturers. The proposed fully analytical model exhibits on average the best accuracy with a high computational efficiency (less than 1 ms per operating point) compared to state-of-the-art analytical switching loss models, as validated by using both data sheet information and measured device characteristics.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10734143","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Model Predictive Control With Grid-Forming Capability for Back-to-Back Converters in Wind Turbine Systems 针对风力涡轮机系统中背靠背变流器的具有并网能力的模型预测控制

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IEEE open journal of power electronics Pub Date : 2024-10-21 DOI: 10.1109/OJPEL.2024.3476028

Zhijie Zeng;Dawei Chen;Shiyao Qin;Shuai Yuan;Zhixiang Zou;Jinyu Chen;Chen Qi

{"title":"A Model Predictive Control With Grid-Forming Capability for Back-to-Back Converters in Wind Turbine Systems","authors":"Zhijie Zeng;Dawei Chen;Shiyao Qin;Shuai Yuan;Zhixiang Zou;Jinyu Chen;Chen Qi","doi":"10.1109/OJPEL.2024.3476028","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3476028","url":null,"abstract":"With the increasing penetration of wind turbine (WT) systems with permanent magnet synchronous generators (PMSGs) into the power grids, the back-to-back converter (BTB) has become the key element interfacing wind sources and power grids. Compared to the grid-following voltage source converter (GFL-VSC), the grid-forming VSC (GFM-VSC) shows voltage and frequency support capabilities, which meets the requirement of grid codes for WT systems. Usually, the linear regulator is employed to realize the tracking of voltage and current of GFM-VSCs, but it has limitations of complex parameter design and dynamic performance. Recently, the model predictive control (MPC) is a promising alternative controller due to the easy adoption and fast control response. This paper proposes a novel MPC method for BTB to achieve grid-forming function. The model-based control concept of the MPC effectively overcomes the complex parameter-tuning process of the cascaded linear regulators. In addition, the overshoot in the step-response of the active power of GFM-VSCs during transient process is effectively improved by using a new multi-objective cost function. The reduced power overshoot is beneficial for fully utilizing the overload capacity of the converter, avoiding damage to semiconductor devices and causing system blocking. Finally, the simulation and experiments have confirmed the feasibility of the proposed MPC method.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10726784","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package 基于按压封装的分立式碳化硅 MOSFET 器件的双面冷却方法

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IEEE open journal of power electronics Pub Date : 2024-10-16 DOI: 10.1109/OJPEL.2024.3479293

Ran Yao;Zheyan Zhu;Hui Li;Wei Lai;Xianping Chen;Francesco Iannuzzo;Renkuan Liu;Xiaorong Luo

{"title":"A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package","authors":"Ran Yao;Zheyan Zhu;Hui Li;Wei Lai;Xianping Chen;Francesco Iannuzzo;Renkuan Liu;Xiaorong Luo","doi":"10.1109/OJPEL.2024.3479293","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3479293","url":null,"abstract":"The conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is proposed to optimize its thermal and electrical performances. First, a double-sided cooling PP structure for the discrete SiC MOSFET devices is designed with a copper foam gate pin and an embedded fixture. Then, based on finite element simulations, the steady-state thermal and electrical performances of the discrete SiC MOSFET device with the double-sided cooling PP package are analyzed, and the parasitic inductance of the designed SiC MOSFET device is extracted by the ANSYS Q3D software. Finally, a prototype of the double-sided cooling PP SiC MOSFET device is fabricated, and test platforms are established to verify its performance. The research findings demonstrate that the designed double-sided cooling PP SiC MOSFET device can reduce thermal resistance and switching loss by 47.4 % and 42.3%, respectively.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10719678","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Modeling and Degradation Profiling of E-Mode GaN HEMTs for Aging Characterization 用于老化表征的 E-Mode GaN HEMT 的热建模和降解剖面分析

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IEEE open journal of power electronics Pub Date : 2024-10-15 DOI: 10.1109/OJPEL.2024.3481056

Hussain Sayed;Harish S. Krishnamoorthy

{"title":"Thermal Modeling and Degradation Profiling of E-Mode GaN HEMTs for Aging Characterization","authors":"Hussain Sayed;Harish S. Krishnamoorthy","doi":"10.1109/OJPEL.2024.3481056","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3481056","url":null,"abstract":"Managing the thermal behavior of GaN devices under test (DUT) poses significant challenges during accelerated thermal cycling (ATC) tests, particularly due to the compact packaging of small GaN devices (e.g., QFN package) and the sharp rise in the device's \u0000<inline-formula><tex-math>$R_{rm{DSon}}$</tex-math></inline-formula>\u0000 at high junction temperatures. This paper presents a framework for analyzing and modeling the thermal response performance of the ATC test setup and evaluating the impact of non-linear dissipated power on the GaN DUTs. It outlines the limitations of conventional thermal sensors in accurately estimating the DUT's junction temperature through case temperature measurements under ATC conditions. The analysis and modeling of the experimental junction temperature response function shows about 4 s time constant in the measurements using a thermistor placed near the DUT, highlighting the GaN DUT's susceptibility to thermal runaway under ATC conditions (\u0000<inline-formula><tex-math>$T_{rm{j-max}}$</tex-math></inline-formula>\u0000 > 125 °C), where the thermal time constant significantly exceeds the DUT's thermal transient time. Consequently, an on-state resistance (\u0000<inline-formula><tex-math>$R_{rm{DSon}}$</tex-math></inline-formula>\u0000)-based \u0000<inline-formula><tex-math>$T_{rm{j}}$</tex-math></inline-formula>\u0000 estimation method is employed to monitor the \u0000<inline-formula><tex-math>$T_{rm{j}}$</tex-math></inline-formula>\u0000 and control the thermal cycling window boundaries effectively. Experimental investigations of several e-mode GaN HEMTs under different ATC windows are conducted to validate the ATC testing framework. Moreover, the temperature coefficient of on-state resistance (α) is characterized and quantified - considering fully packaged individual GaN DUTs’ mechanical and electrical degradation mechanisms.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10717423","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Dual-Peak Current Control Strategy and Implementation for Four-Switch Buck-Boost Converter 四开关降压-升压转换器的双峰值电流控制策略与实现

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IEEE open journal of power electronics Pub Date : 2024-10-15 DOI: 10.1109/OJPEL.2024.3481001

Zhaoliang Wen;Xiangjun Zhang;Hongyu Zhang;Dianguo Xu

{"title":"A Dual-Peak Current Control Strategy and Implementation for Four-Switch Buck-Boost Converter","authors":"Zhaoliang Wen;Xiangjun Zhang;Hongyu Zhang;Dianguo Xu","doi":"10.1109/OJPEL.2024.3481001","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3481001","url":null,"abstract":"The four-switch buck-boost (FSBB) converter is ideal for scenarios such as distributed power supply in data centers and low-voltage DC-DC in electric vehicles as a voltage regulator, because it is easy to achieve zero-voltage switch (ZVS) and has both boost and buck capabilities. In order to avoid complex real-time calculations or the need for large data storage, to realize wide input, and full load range ZVS a dual-peak current control strategy is proposed. This strategy associates two peak points of the inductor current by introducing input and output voltage to achieve the boosting and bucking. Further, the working principle of the strategy is analyzed and the RMS value of the inductor current is optimized to improve the efficiency. And the case of inductor current not being reset is analyzed and set limits to ensure the inductor current can be reset at constant frequency. The strategy can be realized by high-speed comparators as well as low-delay logic gates, thus saving the storage and computational resources of the controller. Finally, a 300 W prototype with an input voltage range of 36-60 V and an output voltage of 48 V is built to verify the correctness of the strategy.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10717453","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Review of the Experimental Performance of Turn-Off Methods in Wide Bandgap Semiconductors 宽带隙半导体关断方法的实验性能综述

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IEEE open journal of power electronics Pub Date : 2024-10-10 DOI: 10.1109/OJPEL.2024.3478178

Francois P. du Toit;Ivan W. Hofsajer

引用次数: 0

A Multilevel Current-Fed DAB Converter With Direct Power Transfer 具有直接功率传输功能的多电平电流馈电 DAB 转换器

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IEEE open journal of power electronics Pub Date : 2024-10-08 DOI: 10.1109/OJPEL.2024.3476496

Sajjad Goudarzitaemeh;Lucas Melanson;Justin Woelfle;Majid Pahlevani

引用次数: 0

Analytical Loss Model for Magnetic Cores Based on Vector Magnetic Circuit Theory 基于矢量磁路理论的磁芯损耗分析模型

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IEEE open journal of power electronics Pub Date : 2024-10-08 DOI: 10.1109/OJPEL.2024.3476166

Chengbo Li;Ming Cheng;Wei Qin;Zheng Wang;Xiang Ma;Wei Wang

{"title":"Analytical Loss Model for Magnetic Cores Based on Vector Magnetic Circuit Theory","authors":"Chengbo Li;Ming Cheng;Wei Qin;Zheng Wang;Xiang Ma;Wei Wang","doi":"10.1109/OJPEL.2024.3476166","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3476166","url":null,"abstract":"Currently, some empirical formula methods, such as the Steinmetz equation, have been widely used in calculating high-frequency magnetic core loss. Although these methods may provide satisfactory accuracy under some certain conditions, they not only cannot present clear physical interpretation and fail to account for the origin and variation of losses, but also offer much lower accuracy for wide operation ranges. In this article, a new analytical model is proposed for the first time to predict core loss by the new vector magnetic circuit theory. In addition to reluctance, two new components, i.e., magductance and hysteretance are proposed in the vector magnetic circuit, which are used to describe the eddy-current loss and the hysteresis loss, respectively. Thus, the clear physical significance is available with the proposed loss model. Given the geometrical and physical parameters of cores, the loss can be predicted. Furthermore, the uneven distribution of magnetic flux inside the magnetic core is characterized by parallel vector magnetic circuits. By comparing with the available empirical formulas, it has been proven that the proposed analytical model not only offers clear physical concepts, but also has much higher accuracy.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10707354","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142550547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research Insights on Recent Power Converter Topologies and Control Strategies for Wireless EV Chargers: A Comprehensive Study 最新电动汽车无线充电器电源转换器拓扑和控制策略研究透视：综合研究

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IEEE open journal of power electronics Pub Date : 2024-10-04 DOI: 10.1109/OJPEL.2024.3474707

Venugopal Ramadoss;Balaji Chandrasekar;M.M.R. Ahmed;Dominic Savio A;Narayanamoorthi Rajamanickam;Thamer A. H. Alghamdi

{"title":"Research Insights on Recent Power Converter Topologies and Control Strategies for Wireless EV Chargers: A Comprehensive Study","authors":"Venugopal Ramadoss;Balaji Chandrasekar;M.M.R. Ahmed;Dominic Savio A;Narayanamoorthi Rajamanickam;Thamer A. H. Alghamdi","doi":"10.1109/OJPEL.2024.3474707","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3474707","url":null,"abstract":"Electric vehicles (EVs) penetrating the transportation sector are accelerated through environmental concerns, low prices, and increased power density. At the same time, the technologies for wireless charging of EVs are advancing due to their convenience, cost-effectiveness, and reliability as charging solutions. The crucial part of Wireless EV (W-EV) chargers, apart from charging pads and compensation, is the power electronics converters. These converters are essential for converting electrical energy into an appropriate form for efficient transmission and reception. This article provides a comprehensive review of the recent advancements in power converter topologies and their control methods used in W-EV chargers. Depending on the specific requirements of the W-EV charger, these converters can be classified into DC-DC, DC-AC, AC-AC, and AC-DC converters. In addition, the article explores specialized converters such as multiple-stage, multiple-phase, multiple transmitter and multiple receiver-based converters, discussing their technical details, merits and limitations. The control techniques for the power electronics converters utilised in W-EV chargers such as transmitter-side control, receiver-side control and dual controls are presented along with various technical comparative analyses. Challenges and future research directions in advanced power converter topologies for W-EV chargers are outlined at last. This article assists researchers in gaining insights into the recent technological advancements and developments aimed at enhancing the performance of the W-EV charger.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10705693","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142550546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of an Artificial Neural Network Based Thermal Model for Heat Sinks in Power Electronics Applications 为电力电子应用中的散热器开发基于人工神经网络的热模型

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IEEE open journal of power electronics Pub Date : 2024-09-27 DOI: 10.1109/OJPEL.2024.3469231

David Molinero;Daniel Santamargarita;Emilio Bueno;Miroslav Vasic;Marta Marrón

{"title":"Development of an Artificial Neural Network Based Thermal Model for Heat Sinks in Power Electronics Applications","authors":"David Molinero;Daniel Santamargarita;Emilio Bueno;Miroslav Vasic;Marta Marrón","doi":"10.1109/OJPEL.2024.3469231","DOIUrl":"https://doi.org/10.1109/OJPEL.2024.3469231","url":null,"abstract":"Heat sinks are a fundamental component of power electronics converters, so it is important to have a reliable method to study and optimize their size. Thermal analysis of heat sinks can be a complex problem as it involves different heat transfer mechanisms, and it is often necessary to use finite element simulations to obtain accurate results. However, these simulations, being very slow, are relegated to the validation process. This paper proposes a thermal model of heat sinks based on artificial neural networks. The model, unlike previous state-of-the-art models that only obtain the average temperature of the heat sink, is able to obtain a thermal map of the heat sink surface, as if it were an image, by using convolutional layers. The main advantage of this approach is that using these convolutional layers, the model is able to efficiently process how the elements are distributed on the heat sink. This model, valid for heat sinks of very different sizes in both laminar and turbulent flow, has an error of less than 1.5% and is 1500 times faster than finite element simulations, so it can be easily used in brute-force optimization processes, where many different designs need to be analyzed.","PeriodicalId":93182,"journal":{"name":"IEEE open journal of power electronics","volume":null,"pages":null},"PeriodicalIF":5.0,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10696942","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142447193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0