Power electronic devices and components最新文献_第3页

Practical application-focused online V-I curve monitoring system for power semiconductor devices 面向实际应用的功率半导体器件V-I曲线在线监测系统

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-08-27 DOI: 10.1016/j.pedc.2025.100111

Yandagkhuu Bayarsaikhan, Ichiro Omura

{"title":"Practical application-focused online V-I curve monitoring system for power semiconductor devices","authors":"Yandagkhuu Bayarsaikhan, Ichiro Omura","doi":"10.1016/j.pedc.2025.100111","DOIUrl":"10.1016/j.pedc.2025.100111","url":null,"abstract":"<div><div>As reliability is growing critical in power electronics systems, preventive maintenance for power semiconductor devices is crucial for extending system lifespan and improving robustness. However, conventional time-based maintenance often increases operational costs and unexpected downtime due to significant variation and uncertainty in the power semiconductor device's lifetime. In contrast, condition-based maintenance offers an optimized supervision scheme based on real-time health monitoring, reducing unnecessary costs and increasing overall system reliability.</div><div>This paper presents a practical, non-intrusive, online condition monitoring system for detecting degradations in power semiconductor devices. The developed V-I curve monitoring system accurately measures <em>V</em><sub>CE(SAT)</sub>-<em>I</em><sub>C</sub> curves for IGBT and <em>V</em><sub>F</sub>-<em>I</em><sub>F</sub> curves for power diode during the normal operation of a full-bridge inverter. A novel conduction current (<em>I</em><sub>C</sub>) sensing method based on a low-cost, tiny PCB sensor and a two-stage integrator was proposed. On-state voltage (<em>V</em><sub>ON</sub>) is measured by a diode-based circuit, and case temperature (<em>T</em><sub>C</sub>) is sensed by a thermocouple. Real-time <em>V</em><sub>ON</sub>-<em>I</em><sub>C</sub>-<em>T</em><sub>C</sub> samples are captured simultaneously with 16-bit ADCs of the microcontroller and stored in the SD card. Acquired V-I curve data is analyzed using two statistical approaches to detect bond wire and solder layer degradations. Both the residual-based fit model and the multivariate T<sup>2</sup> outlier methods successfully detected abnormal conditions, and comparisons are made for these two approaches.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100111"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145018846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Volume reduction of magnetic components in DC/DC converters for fuel cell vehicles 燃料电池汽车DC/DC变换器中磁性元件体积减小

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-06-02 DOI: 10.1016/j.pedc.2025.100101

Jonas Pfeiffer, Manfred Wohlstreicher, Philemon Wrensch, Michael Schmidhuber

引用次数: 0

Static vs. dynamic characterization of p-GaN HEMTs: Discrepancies in electrical characteristics and their dependence on bias history p-GaN hemt的静态与动态表征：电特性差异及其对偏置历史的依赖

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-09-09 DOI: 10.1016/j.pedc.2025.100112

Ludovic Roche , David Trémouilles , Emmanuel Marcault , Corinne Alonso

引用次数: 0

A digital twin for predicting the solder degradation lifetime of a GaN eHEMT integrated power module under power cycling conditions 预测功率循环条件下GaN eHEMT集成电源模块焊料退化寿命的数字孪生

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-10-13 DOI: 10.1016/j.pedc.2025.100123

Zhongchao Sun , Wendi Guo , Masaki Takahashi , Angel Pena Quintal , Pearl Agyakwa , Paul Evans , Ke Li , Stig Munk-Nielsen , Asger Bjørn Jørgensen

{"title":"A digital twin for predicting the solder degradation lifetime of a GaN eHEMT integrated power module under power cycling conditions","authors":"Zhongchao Sun , Wendi Guo , Masaki Takahashi , Angel Pena Quintal , Pearl Agyakwa , Paul Evans , Ke Li , Stig Munk-Nielsen , Asger Bjørn Jørgensen","doi":"10.1016/j.pedc.2025.100123","DOIUrl":"10.1016/j.pedc.2025.100123","url":null,"abstract":"<div><div>Novel packaging designs eliminate bond wires in GaN eHEMTs power modules for high-frequency applications, making solders another critical packaging failure point due to thermomechanical fatigue. This study presents a digital twin (DT) to predict the power module lifetime by considering solder degradation in power cycling (PC) tests. An in-house PC test with direct temperature measurement followed by an industrial PC test for DT validation was conducted. The power module failed when the junction temperature swing increased by 20%, caused by solder degradation coupled with device self-heating effects. The digital modeling process addressed the multiphysics and multiscale challenges, wherein the electrothermal simulation demonstrates the coupling model effectively captures the power loss increment phenomenon, while also considering different time scales in two domains. By embedding temperature-dependent power loss into the thermomechanical model, replacing the physical device model with a reduced order lumped thermal network, and modeling the thin PCB features as layers, the DT’s computational speed improved over 20 times. A model decomposition method extracted the viscoplastic dissipation density, which is incorporated into Morrow’s Model to predict power module lifetime by transforming failure criteria into a failure threshold for solder degradation ratio. The DT’s applicability and fidelity were validated experimentally, demonstrating a lifetime prediction error of 1.07% and a post-failure junction temperature prediction deviation of 4.4%. The DT offers insights into solder behavior during PC unattainable through direct measurement and servers as a valuable tool for GaN packaging design, facilitating PC performance optimization while minimizing time and cost-intensive prototype fabrication and testing.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100123"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145320107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters 不同温敏电学参数对p-GaN hemt高温行为的研究

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-06-05 DOI: 10.1016/j.pedc.2025.100103

Lukas Hein, Maximilian Goller, Gengqi Li, Marius Lößner, Josef Lutz, Thomas Basler

{"title":"Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters","authors":"Lukas Hein, Maximilian Goller, Gengqi Li, Marius Lößner, Josef Lutz, Thomas Basler","doi":"10.1016/j.pedc.2025.100103","DOIUrl":"10.1016/j.pedc.2025.100103","url":null,"abstract":"<div><div>Due to recent improvements and technical advantages in applications with high switching frequencies, research is increasingly focusing on GaN high electron mobility transistors (HEMTs). An accurate temperature determination is thereby of particular importance to give precise lifetime estimations and define safe operation areas. This work investigates on the temperature estimation by means of the temperature sensitive electrical parameters (TSEPs) <em>R</em><sub>DS,on</sub> (<em>T</em>) and <em>V</em><sub>GS</sub> (<em>T</em>) of GIT-type transistors, supported by an IR-camera. Several <em>Z</em><sub>th</sub> characteristics were measured, whereby the temperature estimation with <em>V</em><sub>GS</sub> (<em>T</em>) appears to be superior. Furthermore, the investigation includes static and dynamic characterization as well as power cycling tests (PCT) with switching losses at high temperature above the datasheet limit of 150°C. The device operates stable and reliable at a junction temperature of 175°C in the PCT.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100103"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144632381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic field measurement for contactless current sensing in power electronic converters 电力电子变换器中非接触式电流传感的磁场测量

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-10-26 DOI: 10.1016/j.pedc.2025.100129

Tien Anh Nguyen , Pierre-Yves Joubert , Stéphane Lefebvre , Laurent Dupont , Denis Labrousse , Gérard Chaplier , Mickael Petit , François Costa

{"title":"Magnetic field measurement for contactless current sensing in power electronic converters","authors":"Tien Anh Nguyen , Pierre-Yves Joubert , Stéphane Lefebvre , Laurent Dupont , Denis Labrousse , Gérard Chaplier , Mickael Petit , François Costa","doi":"10.1016/j.pedc.2025.100129","DOIUrl":"10.1016/j.pedc.2025.100129","url":null,"abstract":"<div><div>Current sensing plays an important role in power electronics, for both protection and control of power electronic converters. This paper proposes an approach for detecting short-circuit (SC) events through the measurement of the magnetic field radiated by power converters. Two magnetic field sensor technologies (AMR sensor and induction coil) were evaluated. The induction coil system achieves a frequency bandwidth of 20 MHz with simple signal conditioning, whereas the AMR system is limited to about 1 MHz and requires more complex electronic conditioning. Magnetic field mapping over the printed circuit board (PCB) was performed to identify favorable positions for SC detection. Contactless current sensing was then evaluated on an EPC evaluation board based on GaN transistors. The results demonstrate that induction coil is a promising solution, not only for SC event detection but also for contactless current measurement in power converters. This work contributes to the development of integrated contactless current sensors for power converters or for intelligent gate drivers with SC or overcurrent protection integrated, especially dedicated to wide-bandgap devices such as GaN and SiC transistors, which often exhibit lower SC robustness compared to silicon devices.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100129"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145415070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gigahertz, low-cost current shunt with retrofitting capability for characterization of fast-switching GaN devices 千兆赫，低成本电流分流与改造能力表征快速开关GaN器件

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-10-18 DOI: 10.1016/j.pedc.2025.100124

Sebastian Klötzer , Jim Honea , Nils Duchow , Georgii Iashin

引用次数: 0

400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI 400V SiC MOSFET支持三级拓扑结构，可用于从电机驱动器到AI的高效应用

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-06-16 DOI: 10.1016/j.pedc.2025.100104

Ralf Siemieniec, Martin Wattenberg, Ertugrul Kocaaga, Sriram Jagannath, Elvir Kahrimanovic, Jyotshna Bhandari, Heejae Shim, Alberto Pignatelli

引用次数: 0

Performance analysis of PMSM servo-drive with state feedback and hybrid position controllers 带状态反馈和混合位置控制器的永磁同步电机伺服驱动性能分析

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-09-16 DOI: 10.1016/j.pedc.2025.100116

Tomasz Tarczewski , Hubert Lisinski , Lech M. Grzesiak

引用次数: 0

Design optimization of integrated CM/DM inductors for power drive input filter 电源驱动输入滤波器集成CM/DM电感器的设计优化

Power electronic devices and components Pub Date : 2025-12-01 Epub Date: 2025-09-12 DOI: 10.1016/j.pedc.2025.100115

Rodrigo Drummond , Bernardo Cougo , Duc-Hoan Tran , Gregory Almeida , Sébastien Serpaud , Victor Dos Santos , Lenin M.F. Morais

引用次数: 0