Static vs. dynamic characterization of p-GaN HEMTs: Discrepancies in electrical characteristics and their dependence on bias history

Power electronic devices and components Pub Date : 2025-09-09 DOI:10.1016/j.pedc.2025.100112

Ludovic Roche , David Trémouilles , Emmanuel Marcault , Corinne Alonso

引用次数: 0

Abstract

Quasi-static electrical characteristics of p-GaN HEMTs fluctuate with bias history. This study evidences that dynamic operation is fortunately highly reproducible without pre-conditioning. The original experimental setup highlights that quasi-static data alone is insufficient for modeling dynamic behavior, while allowing precise detection of discrepancies, enabling improved transient modeling.

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p-GaN hemt的静态与动态表征：电特性差异及其对偏置历史的依赖

p-GaN hemt的准静态电特性随偏置历史波动。本研究证明动态操作在没有预处理的情况下具有很高的可重复性。最初的实验设置强调，准静态数据本身不足以模拟动态行为，同时允许精确检测差异，从而改进瞬态建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days