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Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg 轨道互耦对氮化镓三水平桥腿影响的系统研究
Power electronic devices and components Pub Date : 2025-09-18 DOI: 10.1016/j.pedc.2025.100120
Maria Giorgia Spitaleri , Francesco Iannuzzo , Emre Gurpinar , Giacomo Scelba
{"title":"Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg","authors":"Maria Giorgia Spitaleri ,&nbsp;Francesco Iannuzzo ,&nbsp;Emre Gurpinar ,&nbsp;Giacomo Scelba","doi":"10.1016/j.pedc.2025.100120","DOIUrl":"10.1016/j.pedc.2025.100120","url":null,"abstract":"<div><div>An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100120"},"PeriodicalIF":0.0,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145219264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure modes and remedies of a solid-state low voltage DC circuit breaker through 3,000,000＋ operation cycles 固态低压直流断路器3,000,000+运行周期的失效模式和补救措施
Power electronic devices and components Pub Date : 2025-09-18 DOI: 10.1016/j.pedc.2025.100119
Yang Liu , Kayla Chuong , Zhi Jin Zhang , Lauren M. Garten , Lukas Graber
{"title":"Failure modes and remedies of a solid-state low voltage DC circuit breaker through 3,000,000＋ operation cycles","authors":"Yang Liu ,&nbsp;Kayla Chuong ,&nbsp;Zhi Jin Zhang ,&nbsp;Lauren M. Garten ,&nbsp;Lukas Graber","doi":"10.1016/j.pedc.2025.100119","DOIUrl":"10.1016/j.pedc.2025.100119","url":null,"abstract":"<div><div>This paper reports and analyzes the failure modes of a 1.2 kV low voltage (LV) solid-state dc circuit breaker (DCCB) over 3,000,000＋ opening operations. The motivation of this work is to study the assembly and component reliability of such a DCCB with real-world operational stress. To achieve the goal, accelerated DCCB operation tests are performed. After a comprehensive review of the test records and examination of the DCCB components, a total of five failure modes and three operational issues are identified. The natures of the failures and issues span from electrical design and mechanical structure to thermal management and cybersecurity. With each corresponding remedy being implemented, failures and issues are effectively addressed. To the best of the authors’ knowledge, this work is the first to publish results from DCCB that achieved 3,000,000＋ operations, providing meaningful references to improve solid-state DCCB design for LVDC applications.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100119"},"PeriodicalIF":0.0,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Embedded spectroscopy: Potentialities and constraints for onboard battery diagnostics 嵌入式光谱学：机载电池诊断的潜力和限制
Power electronic devices and components Pub Date : 2025-09-17 DOI: 10.1016/j.pedc.2025.100118
Charles Bechara , Guy Friedrich , Christophe Forgez , Samuel Cregut
{"title":"Embedded spectroscopy: Potentialities and constraints for onboard battery diagnostics","authors":"Charles Bechara ,&nbsp;Guy Friedrich ,&nbsp;Christophe Forgez ,&nbsp;Samuel Cregut","doi":"10.1016/j.pedc.2025.100118","DOIUrl":"10.1016/j.pedc.2025.100118","url":null,"abstract":"<div><div>This paper introduces an on-board, low-cost Electrochemical Impedance Spectroscopy technique for battery diagnostics, utilizing numerical simulations and experimental results. EIS, commonly used in laboratories to assess charge transfer and diffusion in electrochemical cells, is ideal for monitoring battery performance, state of charge, and health. However, traditional EIS equipment is too large and expensive for automotive use. The proposed system offers a compact, cost-effective solution for electric vehicles. We discuss the challenges and trade-offs for accurate on-board measurements, based on simulations. Prototype results are then compared with laboratory EIS measurements on 260 Ah Li-NMC EV pouch cells, demonstrating that embedded spectroscopy achieves precise results, even for high-capacity, low-impedance cells. The study highlights the potential of this technique as a reliable and effective method for battery diagnostics in automotive applications.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100118"},"PeriodicalIF":0.0,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145120834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance analysis of PMSM servo-drive with state feedback and hybrid position controllers 带状态反馈和混合位置控制器的永磁同步电机伺服驱动性能分析
Power electronic devices and components Pub Date : 2025-09-16 DOI: 10.1016/j.pedc.2025.100116
Tomasz Tarczewski , Hubert Lisinski , Lech M. Grzesiak
{"title":"Performance analysis of PMSM servo-drive with state feedback and hybrid position controllers","authors":"Tomasz Tarczewski ,&nbsp;Hubert Lisinski ,&nbsp;Lech M. Grzesiak","doi":"10.1016/j.pedc.2025.100116","DOIUrl":"10.1016/j.pedc.2025.100116","url":null,"abstract":"<div><div>High-performance operation of servo-drive with permanent magnet synchro-nous motor (PMSM) is required in many industrial applications, including robotics, machines, and, recently, aircraft components. Complex control structures are necessary to meet the specific requirements of these applications. In this paper, two control structures developed for the position control of the PMSM servo-drive are presented. The state feedback control (SFC) structure augmented by state variables’ limitation and load torque compensation is presented and compared with a hybrid control structure (HSC) where the inner current control loop exists. An experimental evaluation of both control schemes regarding dynamic properties, disturbance compensation, computational complexity, and robustness against the moment of inertia changes is included.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100116"},"PeriodicalIF":0.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145120835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mission-profile based reliability framework for medium-frequency transformers 基于任务剖面的中频变压器可靠性框架
Power electronic devices and components Pub Date : 2025-09-12 DOI: 10.1016/j.pedc.2025.100114
Ahmed Meligy , Rafael Coelho-Medeiros , Ilknur Colak , Seddik Bacha
{"title":"Mission-profile based reliability framework for medium-frequency transformers","authors":"Ahmed Meligy ,&nbsp;Rafael Coelho-Medeiros ,&nbsp;Ilknur Colak ,&nbsp;Seddik Bacha","doi":"10.1016/j.pedc.2025.100114","DOIUrl":"10.1016/j.pedc.2025.100114","url":null,"abstract":"<div><div>This paper proposes a theoretical framework for assessing the reliability of medium-frequency transformers, combining random failure modeling with wear-out analysis of dielectric insulation. The method decomposes the transformer into discrete dielectric regions and estimates their lifetime based on thermal and electrical stress profiles derived from a specified mission-profile. A case study on a 170 kW, 15 kHz dual active bridge converter demonstrates the approach, using cycle counting, electrothermal modeling, and Monte Carlo simulations to predict regional insulation degradation. Results show that for the studied mission-profile, the medium-frequency transformer achieves a wear-out lifetime well beyond 25 years, with minimal electric stress observed under normal operating conditions. The framework helps identify critical insulation zones and supports more informed design and lifetime risk evaluation in high-frequency power electronic systems.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100114"},"PeriodicalIF":0.0,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design optimization of integrated CM/DM inductors for power drive input filter 电源驱动输入滤波器集成CM/DM电感器的设计优化
Power electronic devices and components Pub Date : 2025-09-12 DOI: 10.1016/j.pedc.2025.100115
Rodrigo Drummond , Bernardo Cougo , Duc-Hoan Tran , Gregory Almeida , Sébastien Serpaud , Victor Dos Santos , Lenin M.F. Morais
{"title":"Design optimization of integrated CM/DM inductors for power drive input filter","authors":"Rodrigo Drummond ,&nbsp;Bernardo Cougo ,&nbsp;Duc-Hoan Tran ,&nbsp;Gregory Almeida ,&nbsp;Sébastien Serpaud ,&nbsp;Victor Dos Santos ,&nbsp;Lenin M.F. Morais","doi":"10.1016/j.pedc.2025.100115","DOIUrl":"10.1016/j.pedc.2025.100115","url":null,"abstract":"<div><div>More electric aircraft face many challenges related to the weight and losses of power quality and EMI filters. A solution to reduce weight and losses is integrating the Differential Mode (DM) and Common Mode (CM) inductances of filters in the same component. This integration can be accomplished by adding extra magnetic paths and windings to a CM choke to increase its leakage inductance further. This paper proposes a design optimization of an integrated CM/DM inductor for EMI input filters of Power Drive Systems used in more electric aircraft. The integrated solution is then compared to an optimized discrete solution, showing potential reductions of 20% in weight and 14% in losses.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100115"},"PeriodicalIF":0.0,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of SiC MOSFET’s current hump mechanism induced by false turn-on of the high-side body diode 高侧体二极管误导引起的SiC MOSFET电流驼峰机制研究
Power electronic devices and components Pub Date : 2025-09-10 DOI: 10.1016/j.pedc.2025.100117
Taehyun Jang, Hyemin Kang
{"title":"Investigation of SiC MOSFET’s current hump mechanism induced by false turn-on of the high-side body diode","authors":"Taehyun Jang,&nbsp;Hyemin Kang","doi":"10.1016/j.pedc.2025.100117","DOIUrl":"10.1016/j.pedc.2025.100117","url":null,"abstract":"<div><div>SiC MOSFETs have been widely used in high-frequency applications due to their high-speed switching characteristics. However, as the switching speed increases, the <em>di/dt</em> of the device also increases, which is highly influenced by the parasitic inductance created by the wire bonding and the package leads. In the half-bridge inductive switching structure, while the false turn-on mechanism of the switching device is well established, the displacement current flows in the high side device, operating in freewheeling mode through the body diode, has not been identified. In this paper, the current hump phenomenon of the SiC MOSFETs, caused by the high side MOSFET’s false turn-on during the low side turn-on transient in a half-bridge circuit, was analyzed. In addition, the effect of the high-side MOSFET’s false turn-on dependence under different parasitic inductance and load current level was analyzed. Double pulse tests were used to confirm the false turn-on phenomenon due to the parasitic inductance, and Sentaurus TCAD simulation was used to analyze the internal behavior of the device.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100117"},"PeriodicalIF":0.0,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Static vs. dynamic characterization of p-GaN HEMTs: Discrepancies in electrical characteristics and their dependence on bias history p-GaN hemt的静态与动态表征：电特性差异及其对偏置历史的依赖
Power electronic devices and components Pub Date : 2025-09-09 DOI: 10.1016/j.pedc.2025.100112
Ludovic Roche , David Trémouilles , Emmanuel Marcault , Corinne Alonso
{"title":"Static vs. dynamic characterization of p-GaN HEMTs: Discrepancies in electrical characteristics and their dependence on bias history","authors":"Ludovic Roche ,&nbsp;David Trémouilles ,&nbsp;Emmanuel Marcault ,&nbsp;Corinne Alonso","doi":"10.1016/j.pedc.2025.100112","DOIUrl":"10.1016/j.pedc.2025.100112","url":null,"abstract":"<div><div>Quasi-static electrical characteristics of p-GaN HEMTs fluctuate with bias history. This study evidences that dynamic operation is fortunately highly reproducible without pre-conditioning. The original experimental setup highlights that quasi-static data alone is insufficient for modeling dynamic behavior, while allowing precise detection of discrepancies, enabling improved transient modeling.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100112"},"PeriodicalIF":0.0,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Voltage generation for Sawyer-Tower Coss loss measurement based on resonant converters 基于谐振变换器的索耶塔损耗测量电压产生
Power electronic devices and components Pub Date : 2025-09-03 DOI: 10.1016/j.pedc.2025.100113
Paul Korn , Marcus Praast , Andreas Reinhold , Bela Truschenski , Thomas Komma
{"title":"Voltage generation for Sawyer-Tower Coss loss measurement based on resonant converters","authors":"Paul Korn ,&nbsp;Marcus Praast ,&nbsp;Andreas Reinhold ,&nbsp;Bela Truschenski ,&nbsp;Thomas Komma","doi":"10.1016/j.pedc.2025.100113","DOIUrl":"10.1016/j.pedc.2025.100113","url":null,"abstract":"<div><div>Output capacitance losses in modern semiconductor devices become increasingly relevant with fast switching power converters. One widely used method to measure such losses is the Sawyer-Tower circuit. A new voltage generation approach is proposed to handle the highly variable capacitive load in a Sawyer-Tower circuit. An LLC resonant converter is applied to generate the high voltage, high frequency sinusoidal excitation voltage, overcoming limitations of HF amplifiers. An external DC voltage source is introduced to prevent reverse conduction of the device under test, ensuring accurate charge-voltage (Q-V) characterization. Measurements under this voltage excitation are presented. The calculated dissipated energy is verified by thermal measurements observing the temperature rise of the DUT, showing less than 6% deviation. This article presents a scalable and practical setup for power semiconductor characterization at high voltages.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100113"},"PeriodicalIF":0.0,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chip size dependent dynamic behavior of SiC MOSFETs with edge termination 芯片尺寸对边缘端接SiC mosfet动态特性的影响
Power electronic devices and components Pub Date : 2025-08-28 DOI: 10.1016/j.pedc.2025.100110
Y. Kim, H. Kang
{"title":"Chip size dependent dynamic behavior of SiC MOSFETs with edge termination","authors":"Y. Kim,&nbsp;H. Kang","doi":"10.1016/j.pedc.2025.100110","DOIUrl":"10.1016/j.pedc.2025.100110","url":null,"abstract":"<div><div>This study investigates the impact of the active-to-termination area ratio on the dynamic behavior of SiC MOSFETs. As the chip size decreases, the turn-on speed increases due to the reduced input capacitance. However, during the turn-off transient, a <em>dV/dt</em> reversal effect is observed, in which the switching speed decreases despite the overall reduction in parasitic capacitance. This effect arises because, in smaller devices, the edge termination region becomes relatively larger compared to the active region, causing a greater portion of the drain current to flow into the termination region. As a result, the charging of the drain-to-source capacitance in the active region, which dominates the switching transition, slows down. Experimental and mixed-mode simulations confirm that this effect is more pronounced at lower current densities. The study further examines the effect of gate driver capability, showing that a gate driver with high sinking/sourcing capability only maximizes switching frequency. Additionally, thermal resistance and drain-to-source capacitance charging delay limit the maximum switching frequency in smaller devices. These results demonstrate that the active-to-termination area ratio significantly influences the switching characteristics of SiC MOSFETs, particularly in turn-off behavior and frequency limitations.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100110"},"PeriodicalIF":0.0,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145048811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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