Power electronic devices and components最新文献_第2页

Practical application-focused online V-I curve monitoring system for power semiconductor devices 面向实际应用的功率半导体器件V-I曲线在线监测系统

Power electronic devices and components Pub Date : 2025-08-27 DOI: 10.1016/j.pedc.2025.100111

Yandagkhuu Bayarsaikhan, Ichiro Omura

{"title":"Practical application-focused online V-I curve monitoring system for power semiconductor devices","authors":"Yandagkhuu Bayarsaikhan, Ichiro Omura","doi":"10.1016/j.pedc.2025.100111","DOIUrl":"10.1016/j.pedc.2025.100111","url":null,"abstract":"<div><div>As reliability is growing critical in power electronics systems, preventive maintenance for power semiconductor devices is crucial for extending system lifespan and improving robustness. However, conventional time-based maintenance often increases operational costs and unexpected downtime due to significant variation and uncertainty in the power semiconductor device's lifetime. In contrast, condition-based maintenance offers an optimized supervision scheme based on real-time health monitoring, reducing unnecessary costs and increasing overall system reliability.</div><div>This paper presents a practical, non-intrusive, online condition monitoring system for detecting degradations in power semiconductor devices. The developed V-I curve monitoring system accurately measures VCE(SAT)-IC curves for IGBT and VF-IF curves for power diode during the normal operation of a full-bridge inverter. A novel conduction current (IC) sensing method based on a low-cost, tiny PCB sensor and a two-stage integrator was proposed. On-state voltage (VON) is measured by a diode-based circuit, and case temperature (TC) is sensed by a thermocouple. Real-time VON-IC-TC samples are captured simultaneously with 16-bit ADCs of the microcontroller and stored in the SD card. Acquired V-I curve data is analyzed using two statistical approaches to detect bond wire and solder layer degradations. Both the residual-based fit model and the multivariate T2 outlier methods successfully detected abnormal conditions, and comparisons are made for these two approaches.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100111"},"PeriodicalIF":0.0,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145018846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modelling of SiC and GaN transistors based on pulsed S-parameter measurements 基于脉冲s参数测量的SiC和GaN晶体管建模

Power electronic devices and components Pub Date : 2025-08-05 DOI: 10.1016/j.pedc.2025.100108

Martin Hergt , Bernhard Hammer , Martin Sack , Lukas W. Mayer , Sebastian Nielebock , Marc Hiller

引用次数: 0

Analysis of energy storage solutions for ship maneuvering in ports 港口船舶机动能量存储解决方案分析

Power electronic devices and components Pub Date : 2025-07-31 DOI: 10.1016/j.pedc.2025.100109

Marcos Lafoz, Gustavo Navarro, Marcos Blanco, Jorge Nájera, Eduardo Rausell, Javier Munilla

引用次数: 0

Current sensor-free transfer window alignment with combined energy harvesting and current measurement capabilities 电流传感器无转移窗口对准结合能量收集和电流测量能力

Power electronic devices and components Pub Date : 2025-07-15 DOI: 10.1016/j.pedc.2025.100107

Tim McRae

引用次数: 0

Parametric Life Cycle Assessment (LCA) of power modules 电源模块参数生命周期评估（LCA）

Power electronic devices and components Pub Date : 2025-06-26 DOI: 10.1016/j.pedc.2025.100105

Li Fang , Lucas Riondet , Fatimata-Fatim Diarrassouba , Maud Rio , Pierre Lefranc , Jean-Christophe Crébier

引用次数: 0

Multi-parameter detection of bond wire lift-off, current, and temperature in IGBT modules via gate voltage waveforms and CNNs with digital gate control 通过栅极电压波形和带有数字栅极控制的cnn实现IGBT模块中键合线升力、电流和温度的多参数检测

Power electronic devices and components Pub Date : 2025-06-24 DOI: 10.1016/j.pedc.2025.100106

Thatree Mamee , Katsuhiro Hata , Makoto Takamiya , Takayasu Sakurai , Shin-ichi Nishizawa , Wataru Saito

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400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI 400V SiC MOSFET支持三级拓扑结构，可用于从电机驱动器到AI的高效应用

Power electronic devices and components Pub Date : 2025-06-16 DOI: 10.1016/j.pedc.2025.100104

Ralf Siemieniec, Martin Wattenberg, Ertugrul Kocaaga, Sriram Jagannath, Elvir Kahrimanovic, Jyotshna Bhandari, Heejae Shim, Alberto Pignatelli

引用次数: 0

Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters 不同温敏电学参数对p-GaN hemt高温行为的研究

Power electronic devices and components Pub Date : 2025-06-05 DOI: 10.1016/j.pedc.2025.100103

Lukas Hein, Maximilian Goller, Gengqi Li, Marius Lößner, Josef Lutz, Thomas Basler

{"title":"Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters","authors":"Lukas Hein, Maximilian Goller, Gengqi Li, Marius Lößner, Josef Lutz, Thomas Basler","doi":"10.1016/j.pedc.2025.100103","DOIUrl":"10.1016/j.pedc.2025.100103","url":null,"abstract":"<div><div>Due to recent improvements and technical advantages in applications with high switching frequencies, research is increasingly focusing on GaN high electron mobility transistors (HEMTs). An accurate temperature determination is thereby of particular importance to give precise lifetime estimations and define safe operation areas. This work investigates on the temperature estimation by means of the temperature sensitive electrical parameters (TSEPs) RDS,on (T) and VGS (T) of GIT-type transistors, supported by an IR-camera. Several Zth characteristics were measured, whereby the temperature estimation with VGS (T) appears to be superior. Furthermore, the investigation includes static and dynamic characterization as well as power cycling tests (PCT) with switching losses at high temperature above the datasheet limit of 150°C. The device operates stable and reliable at a junction temperature of 175°C in the PCT.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100103"},"PeriodicalIF":0.0,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144632381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Volume reduction of magnetic components in DC/DC converters for fuel cell vehicles 燃料电池汽车DC/DC变换器中磁性元件体积减小

Power electronic devices and components Pub Date : 2025-06-02 DOI: 10.1016/j.pedc.2025.100101

Jonas Pfeiffer, Manfred Wohlstreicher, Philemon Wrensch, Michael Schmidhuber

引用次数: 0

Declaration/Conflict of Interest statement were not included in the published version of the following article, that appeared in issue Volume 5 2023 of Power Electronic Devices and Components 声明/利益冲突声明不包括在以下文章的发布版本中，该文章出现在2023年第5期《电力电子器件和组件》中

Power electronic devices and components Pub Date : 2025-06-01 DOI: 10.1016/j.pedc.2025.100094

引用次数: 0