400V SiC MOSFET支持三级拓扑结构，可用于从电机驱动器到AI的高效应用

Power electronic devices and components Pub Date : 2025-06-16 DOI:10.1016/j.pedc.2025.100104

Ralf Siemieniec, Martin Wattenberg, Ertugrul Kocaaga, Sriram Jagannath, Elvir Kahrimanovic, Jyotshna Bhandari, Heejae Shim, Alberto Pignatelli

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引用次数: 0

摘要

400 V SiC MOSFET技术的引入弥补了200 V中压MOSFET和600 V超结MOSFET之间的电压范围差距。该技术具有低开关损耗和低导通状态电阻的特点，适用于120 VAC或300 VDC系统中的2级拓扑结构，或典型输入电压范围为180 VAC至350 VAC或400 VDC至600 VDC的3级拓扑结构。提出了该技术的概念，并通过在代表3电平ANPC通用逆变器和用于高效电源的3电平FC PFC的测试板上的测量证明了其效率和功率密度增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI

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400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI

The introduction of 400 V SiC MOSFET technology bridges the voltage range gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs. This technology is characterized by low switching losses and low on-state resistance, making it suitable for 2-level topologies in 120 VAC or 300 VDC systems or 3-level topologies with typical input voltages ranging from 180 VAC to 350 VAC or 400 VDC to 600 VDC.

The technology concept is presented, and its efficiency and power density gains are demonstrated through measurements on test boards representing a 3-level ANPC general purpose inverter and a 3-level FC PFC for highly-efficient power supplies.

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来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days