Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters

Power electronic devices and components Pub Date : 2025-06-05 DOI:10.1016/j.pedc.2025.100103

Lukas Hein, Maximilian Goller, Gengqi Li, Marius Lößner, Josef Lutz, Thomas Basler

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引用次数: 0

Abstract

Due to recent improvements and technical advantages in applications with high switching frequencies, research is increasingly focusing on GaN high electron mobility transistors (HEMTs). An accurate temperature determination is thereby of particular importance to give precise lifetime estimations and define safe operation areas. This work investigates on the temperature estimation by means of the temperature sensitive electrical parameters (TSEPs) R_DS,on (T) and V_GS (T) of GIT-type transistors, supported by an IR-camera. Several Z_th characteristics were measured, whereby the temperature estimation with V_GS (T) appears to be superior. Furthermore, the investigation includes static and dynamic characterization as well as power cycling tests (PCT) with switching losses at high temperature above the datasheet limit of 150°C. The device operates stable and reliable at a junction temperature of 175°C in the PCT.

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不同温敏电学参数对p-GaN hemt高温行为的研究

由于近年来在高开关频率应用方面的改进和技术优势，GaN高电子迁移率晶体管（hemt）的研究日益受到关注。因此，精确的温度测定对于给出精确的寿命估计和确定安全操作区域尤为重要。本文研究了在红外相机支持下，利用温度敏感电参数（tsps） RDS、on (T)和VGS (T)对git型晶体管进行温度估计的方法。测量了几个Zth特性，其中用VGS (T)估计温度似乎更优越。此外，调查还包括静态和动态特性以及功率循环测试（PCT），其开关损耗在高于数据表限制150°C的高温下。该器件在PCT中175°C的结温下稳定可靠地工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days