Power electronic devices and components最新文献_第10页

Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor 负载电感中具有寄生电容的超结MOSFET的栅极振铃

Power electronic devices and components Pub Date : 2023-03-01 DOI: 10.1016/j.pedc.2022.100029

Hyemin Kang , Florin Udrea

引用次数: 0

Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance 改进导通性能的650V混合沟道SiC沟槽MOSFET的仿真研究

Power electronic devices and components Pub Date : 2023-03-01 DOI: 10.1016/j.pedc.2022.100031

L. Zhang, T. Dai, P.M. Gammon, V.A. Shah, P.A. Mawby, M. Antoniou

引用次数: 0

Thick gate oxide extrinsic breakdown – The potential role of neutral hydrogen atom 厚栅氧化物外源击穿-中性氢原子的潜在作用

Power electronic devices and components Pub Date : 2023-03-01 DOI: 10.1016/j.pedc.2022.100024

Kin P Cheung

引用次数: 0

Lifetime modeling of solder joints based on accelerated mechanical testing and Finite Element Analysis 基于加速力学测试和有限元分析的焊点寿命建模

Power electronic devices and components Pub Date : 2023-03-01 DOI: 10.1016/j.pedc.2023.100034

M. Lederer, A. Betzwar Kotas, G. Khatibi

{"title":"Lifetime modeling of solder joints based on accelerated mechanical testing and Finite Element Analysis","authors":"M. Lederer, A. Betzwar Kotas, G. Khatibi","doi":"10.1016/j.pedc.2023.100034","DOIUrl":"https://doi.org/10.1016/j.pedc.2023.100034","url":null,"abstract":"<div><p>Solder fatigue is among the predominant failure modes observed in power electronic modules. Under service conditions power electronic parts are exposed to repeated temperature swings originating from resistance heating. In consequence of a mismatch of the coefficients of thermal expansion, thermomechanical stresses are generated at material interconnects. Nevertheless, lifetimes of up to 30 years are requested for high reliability applications. Therefore, there is a demand for accelerated testing methods. However, due to strain rate dependence of inelastic deformations theoretical lifetime modeling is necessary to compare the results of accelerated test methods with usual service conditions. The present study reports on a mechanical testing method operating at the ultrasonic frequency of 20 kHz. During testing samples are exposed to repeated bending deformations until the solder joint finally breaks. The number of cycles to crack initiation is determined for different temperatures ranging from room temperature to 175 °C. Thereafter, an FEM computer simulation of the fatigue experiment is performed, where the visco-plastic Anand model serves as material model of the solder. The time to crack initiation in the solder is evaluated with a model of damage accumulation, which combines the Coffin-Manson model with a multiaxial version of the Goodman relation. It is demonstrated that this model can be applied to the solder alloys PbSnAg, Sn3.5Ag and SnSbAg.</p></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"4 ","pages":"Article 100034"},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49776581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Layer-by-layer printable nano-scale polypropylene for precise control of nanocomposite capacitor dielectric morphologies in metallised film capacitors 逐层可印刷纳米级聚丙烯用于精确控制金属化薄膜电容器中纳米复合电容器的介电形态

Power electronic devices and components Pub Date : 2023-01-01 DOI: 10.1016/j.pedc.2022.100025

William Greenbank, Thomas Ebel

引用次数: 2

Lifetime modelling of solder joints based on accelerated mechanical testing and Finite Element Analysis 基于加速力学试验和有限元分析的焊点寿命建模

Power electronic devices and components Pub Date : 2023-01-01 DOI: 10.1016/j.pedc.2023.100034

M. Lederer, A. Kotas, G. Khatibi

引用次数: 0

Advantages of the Extended Finite Element Method for the Analysis of Crack Propagation in Power 扩展有限元法在动力裂纹扩展分析中的优势

Power electronic devices and components Pub Date : 2022-11-01 DOI: 10.1016/j.pedc.2022.100027

K. Nwanoro, Hua Lu, C. Yin, C. Bailey

引用次数: 4

A self-powered H-Bridge joule theory circuit for piezoelectric energy harvesting systems 用于压电能量收集系统的自供电h桥焦耳理论电路

Power electronic devices and components Pub Date : 2022-10-01 DOI: 10.1016/j.pedc.2022.100015

Mahesh Edla , Mikio Deguchi , Yee Yan Lim

{"title":"A self-powered H-Bridge joule theory circuit for piezoelectric energy harvesting systems","authors":"Mahesh Edla , Mikio Deguchi , Yee Yan Lim","doi":"10.1016/j.pedc.2022.100015","DOIUrl":"10.1016/j.pedc.2022.100015","url":null,"abstract":"<div><p>In this paper, investigation of high direct current/voltage (DC) and power gains using H-Bridge joule theory (HBRJT) circuit with an input voltage of alternating current/voltage (AC) is carried out by avoiding higher switching frequency and additional switches for piezoelectric energy harvesting (PEH) systems. The interventions of the proposed HBRJT circuit delineate the boost conversion topology from AC that is generated by the piezoelectric generator (PG) as a result of the excitation into DC and eliminates the usage of additional switches, inductors, capacitors, duty cycles that result in higher output DC voltage. The proposed topology integrates the implications of both the H-Bridge and joule theory circuits. One additional feasibility of the proposed circuit is that it does not require an additional power supply to trigger the switches. In order to validate the effectiveness of the HBRJT circuit, both simulation and experimental results were presented. In the experiment, a series of testing scenarios were carried out, namely varying the frequency with fixed input voltage and cold start-up at a high frequency. The outcome of the proposed circuit is compared with the conventional H-Bridge, Dual-stage H-Bridge (DSHBR) and literature circuits. When contrasted to H-Bridge DSHBR circuits, the proposed circuit significantly boosts the input low AC voltage into high DC voltage. In addition, compared to structures with an H-Bridge, DSHBR, and literature circuits, the HBRJT circuit is more feasible to achieve supposed voltage and power gains without duty cycles and auxiliary circuits.</p></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"3 ","pages":"Article 100015"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772370422000128/pdfft?md5=7abb8fc559932a7ef2a067856bb52e62&pid=1-s2.0-S2772370422000128-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44564287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Printed circuit board embedded power semiconductors: A technology review 印刷电路板嵌入式功率半导体:技术综述

Power electronic devices and components Pub Date : 2022-10-01 DOI: 10.1016/j.pedc.2022.100017

Till Huesgen

{"title":"Printed circuit board embedded power semiconductors: A technology review","authors":"Till Huesgen","doi":"10.1016/j.pedc.2022.100017","DOIUrl":"10.1016/j.pedc.2022.100017","url":null,"abstract":"<div><p>Embedding power semiconductor devices into printed circuit boards (PCB) provides several benefits compared to conventional packaging technologies. Integrating the semiconductor dies into the circuit board reduces the converter size. This results in short current loops, enabling low interconnection resistances and parasitic inductances. Both contribute to a higher system-level efficiency, as conduction and switching losses are reduced. Moreover, the use of thick Cu substrates allows efficient heat removal, due to a low thermal resistance. Therefore, PCB embedding has received a lot of attention in the power electronics community for more than a decade. This article aims to provide a comprehensive review of the scientific literature on the topic ranging from basic fabrication technology over module or system-level demonstrators for electrical and thermal testing to reliability studies. Performance indicators, such as the commutation loop inductance <em>L<sub>σ</sub></em>, the chip area independent thermal resistance <em>R<sub>th</sub> × A<sub>chip</sub>,</em> allow a comparison of different approaches and benchmarking with conventional power modules. Several publications report stray inductances below 1 nH and chip area independent thermal resistances in the range of 20…30 mm²K/W.</p></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"3 ","pages":"Article 100017"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772370422000141/pdfft?md5=62be0d548740f5708a69b23538553d0e&pid=1-s2.0-S2772370422000141-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42279040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Single terminal and double terminal coil shape analysis using capacitive power transmission for biomedical implant 生物医学植入体电容式功率传输的单端和双端线圈形状分析

Power electronic devices and components Pub Date : 2022-10-01 DOI: 10.1016/j.pedc.2022.100010

Yen Po Wang, Shin'ichi Warisawa

引用次数: 0