Evaluating current sensing methods for accurate characterization in small chip size SiC MOSFETs

Power electronic devices and components Pub Date : 2025-06-01 DOI:10.1016/j.pedc.2025.100102

Y. Kim, H. Park, S. Yoon, H. Kang

引用次数: 0

Abstract

Wide Bandgap power devices, such as SiC MOSFETs, offer superior switching performance, making them essential in high-frequency power systems. This study compares two current sensing methods—Coaxial Shunt Resistor (CSR) and Split-Core Current Probe (SCP) and evaluates their impact on switching characterization of small chip size SiC MOSFETs using Double Pulse Tests. The CSR, with up to 1 GHz bandwidth, enables more accurate transient current measurement compared to the 100 MHz-SCP. Experimental results show that at a high current density, the CSR method at 1 GHz reduced turn-on switching loss by up to 52.4 % and turn-off switching loss by up to 19.8 % compared to the SCP method. Conversely, at low current density, the CSR method captured 74.4 % higher Eon due to its finer resolution of high frequency transients, not detected by SCP. These results reveal that high bandwidth CSR sensing is critical for accurately and reliably characterizing fast switching small chip size SiC MOSFETs.

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评估在小片尺寸SiC mosfet中精确表征的电流传感方法

宽带隙功率器件，如SiC mosfet，提供卓越的开关性能，使其在高频功率系统中必不可少。本研究比较了两种电流传感方法——同轴分流电阻（CSR）和分芯电流探头（SCP），并利用双脉冲测试评估了它们对小芯片尺寸SiC mosfet开关特性的影响。与100mhz - scp相比，CSR具有高达1ghz的带宽，可以实现更精确的瞬态电流测量。实验结果表明，在高电流密度下，与SCP方法相比，CSR方法在1 GHz下的导通和关断损耗分别降低了52.4%和19.8%。相反，在低电流密度下，由于CSR方法对SCP无法检测到的高频瞬态具有更精细的分辨率，因此捕获的Eon高74.4%。这些结果表明，高带宽CSR传感对于准确可靠地表征快速开关小芯片尺寸SiC mosfet至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days