Power electronic devices and components最新文献_第4页

Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction 沟道场-板功率 MOSFET 的应力控制及其对降低电阻的影响

Power electronic devices and components Pub Date : 2025-04-06 DOI: 10.1016/j.pedc.2025.100090

Hiroaki Kato , Shin-ichi Nishizawa , Wataru Saito

{"title":"Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction","authors":"Hiroaki Kato , Shin-ichi Nishizawa , Wataru Saito","doi":"10.1016/j.pedc.2025.100090","DOIUrl":"10.1016/j.pedc.2025.100090","url":null,"abstract":"<div><div>The limitations regarding lateral cell pitch narrowing and on-resistance reduction were investigated. Trench field plate MOSFETs feature deep trenches with thick oxide films. This disrupts the stress balance, leading to significant wafer warpage, which poses a critical challenge in device integration. Stress control has become essential for enabling cell pitch narrowing, achieving high breakdown voltage device designs, and implementing innovative device pattern layouts such as dot pattern cell structures. In this study, stress and wafer warpage associated with lateral cell pitch narrowing were estimated using 3D simulations. Based on these results, the on-resistance reduction limit was also estimated through analytical models. For stripe pattern cell structures, pitch narrowing was constrained by both increased wafer warpage and on-resistance saturation. Notably, the X-direction wafer warpage was identified as the limiting factor for pitch narrowing in high breakdown voltage device designs. In contrast, the dot pattern cell structure significantly reduced wafer warpage and allowed narrower pitches compared to the stripe pattern, despite a weakened mobility enhancement effect.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100090"},"PeriodicalIF":0.0,"publicationDate":"2025-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143829032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs 氮化镓基沟槽mosfet n-p-n垂直结构中失态漏电流的来源

Power electronic devices and components Pub Date : 2025-03-28 DOI: 10.1016/j.pedc.2025.100086

Maciej Kamiński , Kamil Abendroth , Aneta Gołębiowska , Aleksander Szczepański , Krzysztof Urbanowski , Ernest Brzozowski , Jarosław Tarenko , Oskar Sadowski , Justyna Wierzbicka , Renata Kruszka , Kamil Kosiel , Joanna Jankowska-Śliwińska , Iwona Jóźwik , Anna Szerling , Krystian Król , Paweł Prystawko , Michał Boćkowski , Izabella Grzegory , Andrzej Taube

{"title":"On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs","authors":"Maciej Kamiński , Kamil Abendroth , Aneta Gołębiowska , Aleksander Szczepański , Krzysztof Urbanowski , Ernest Brzozowski , Jarosław Tarenko , Oskar Sadowski , Justyna Wierzbicka , Renata Kruszka , Kamil Kosiel , Joanna Jankowska-Śliwińska , Iwona Jóźwik , Anna Szerling , Krystian Król , Paweł Prystawko , Michał Boćkowski , Izabella Grzegory , Andrzej Taube","doi":"10.1016/j.pedc.2025.100086","DOIUrl":"10.1016/j.pedc.2025.100086","url":null,"abstract":"<div><div>In this work, we present the results of research on the off-current mechanism in vertical trench MOS devices manufactured on an ammonothermal substrate. Transistors and npn diode test structures were characterized electrically as well as by SEM and by AFM, which results compared to CAD simulations. We demonstrate that while Mg reactivation is a high-temperature process that enhances the ability to block high voltages, it also introduces killer defects that can degenerate structures. Additionally, we observed that the leakage current at the edges of the mesa has minimal significance. The findings highlight that substrate quality is a crucial factor in preventing killer defect formation and likely in minimizing leakage current at the npn epitaxial stack and off-current in transistor devices.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100086"},"PeriodicalIF":0.0,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143760219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Finite element comparative study on creep and random vibrations of solder joints in BGA package BGA封装焊点蠕变与随机振动的有限元比较研究

Power electronic devices and components Pub Date : 2025-03-25 DOI: 10.1016/j.pedc.2025.100085

Joshua A. Depiver , Sabuj Mallik , Emeka H. Amalu

{"title":"Finite element comparative study on creep and random vibrations of solder joints in BGA package","authors":"Joshua A. Depiver , Sabuj Mallik , Emeka H. Amalu","doi":"10.1016/j.pedc.2025.100085","DOIUrl":"10.1016/j.pedc.2025.100085","url":null,"abstract":"<div><div>As the demand for increasing miniaturisation and functionality of electronic devices soars, understanding the creep and random vibration of solder joints (SJs) in BGA packages in devices is critical to achieving high device reliability. This research employs Finite Element Analysis (FEA) to evaluate the response of four lead-free and one eutectic (Sn63Pb37) solder joints in BGA packages to failure induced by creep and random vibration. Results show deformation and stress damage distributions on the solder joints. The bottom of the solder joint in the BGA assembly is critical to deformation and stress failure induced by thermal and vibration loadings—the stress magnitude of the lead-based solder joint and more than any of the lead-free joints. SAC305 demonstrates the accumulation of the largest volumetric strain energy density (SED) dissipation per cycle loading, while SAC405 accumulates the least SED. The solder joints of SAC387 and SAC405 are observed to amass the highest and least thermal strain, respectively. Stress magnitude in Sn63Pb37 solder joints is highest while that in SAC405 SJs is lowest. Furthermore, SAC405 and Eutectic Sn63Pb37 depict the largest and smallest deformation, respectively. A resilience response of SAC405 to thermal cycle loading is observed. However, the detected susceptibility to deformation-induced failure under random vibration challenges the solder's reliability performance. The findings provide new knowledge that guides the selection of solder alloys for BGA components in electronic devices operating across various sectors that demand higher reliability.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100085"},"PeriodicalIF":0.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143760220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives 从两个正交角度分析p-GaN HEMT器件电活性缺陷的高分辨率TEM新制备方法

Power electronic devices and components Pub Date : 2025-03-25 DOI: 10.1016/j.pedc.2025.100088

Patrick Diehle , Frank Altmann , Susanne Hübner , Johannes Bruckmeier , Richard Neumann , Manuel Stabentheiner , Clemens Ostermaier

{"title":"A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives","authors":"Patrick Diehle , Frank Altmann , Susanne Hübner , Johannes Bruckmeier , Richard Neumann , Manuel Stabentheiner , Clemens Ostermaier","doi":"10.1016/j.pedc.2025.100088","DOIUrl":"10.1016/j.pedc.2025.100088","url":null,"abstract":"<div><div>The characterization of crystal defects inside GaN <em>epi</em> layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for correlative electroluminescence (EL) defect localization and 3D transmission electron microscopy (TEM) analysis to determine and quantify related structural defects with nm dimensions. New focused ion beam (FIB) preparation workflows allowing a combined cross-sectional and planar TEM analysis of localized defect sites will be introduced. It will be demonstrated that nm-sized defects and the structure of critical dislocations within the relatively large EL spot area can be identified and quantified. The workflow is exemplarily applied to stressed normally-off p-GaN HEMT devices. The three-dimensional route of a dislocation bunch in relation to the HEMT gate structure is investigated, and the dislocation core structure is visualized by atomically resolved TEM imaging.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100088"},"PeriodicalIF":0.0,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT 中性束蚀刻使能常关凹栅GaN MOSHEMT的动态特性

Power electronic devices and components Pub Date : 2025-03-18 DOI: 10.1016/j.pedc.2025.100087

Yitai Zhu , Haitao Du , Yu Zhang , Haolan Qu , Han Gao , Haodong Jiang , Wenhui Xu , Xin Ou , Xinbo Zou

{"title":"Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT","authors":"Yitai Zhu , Haitao Du , Yu Zhang , Haolan Qu , Han Gao , Haodong Jiang , Wenhui Xu , Xin Ou , Xinbo Zou","doi":"10.1016/j.pedc.2025.100087","DOIUrl":"10.1016/j.pedc.2025.100087","url":null,"abstract":"<div><div>Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated. Upon positive gate stressing, a minimal shift of + 0.27 V in the threshold voltage (V<sub>th</sub>) is observed, due to capture of electrons by interface traps at the Al<sub>2</sub>O<sub>3</sub>/AlGaN interface. Dynamic ON-resistance (R<sub>on</sub>) and drain current degradation are also studied by applying various drain voltage values and durations. Moreover, interface characterizations by conductance method and deep-level transient spectroscopy (DLTS) both confirm the superior interface quality achieved by NBE processing, with a low interface trap density (D<sub>it</sub>) of 1.19 × 10<sup>12</sup> cm<sup>-2</sup> eV<sup>-1</sup>. The results underscore NBE recessing as an attractive approach for manufacturing highly-reliable normally-off GaN MOSHEMTs for next-generation high-frequency power conversion systems.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100087"},"PeriodicalIF":0.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143704218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Next generation of ICeGaNⓇ for superior no load and light load performance 下一代ICeGaNⓇ具有卓越的空载和轻载性能

Power electronic devices and components Pub Date : 2025-02-14 DOI: 10.1016/j.pedc.2025.100084

Kalparupa Mukherjee, Jin Zhang, Kaspars Ledins, Carlos Toyos Bada, Nirmana Perera, Loizos Efthymiou, Sheung Wai Fung, Martin Arnold, Giorgia Longobardi, Florin Udrea

{"title":"Next generation of ICeGaNⓇ for superior no load and light load performance","authors":"Kalparupa Mukherjee, Jin Zhang, Kaspars Ledins, Carlos Toyos Bada, Nirmana Perera, Loizos Efthymiou, Sheung Wai Fung, Martin Arnold, Giorgia Longobardi, Florin Udrea","doi":"10.1016/j.pedc.2025.100084","DOIUrl":"10.1016/j.pedc.2025.100084","url":null,"abstract":"<div><div>The ICeGaN<sup>Ⓡ</sup> technology aims at enabling widespread adoption of GaN HEMTs in power applications through a monolithic solution that offers an increased <em>V<sub>GS(th)</sub></em> (2.9 V) and a wide ON-state gate driving range of 9 V to 20 V. This makes it compatible with industry standard Si gate-driver ICs and controller ICs. The first ICeGaN product series (H1) introduced the integrated circuit interface to the gate of a standard enhancement mode 650 V p-GaN HEMT, offering superior flexibility, reliability, and protection features. The interface regulates the internal gate of the p-GaN HEMT to stay within a safe range across different temperatures and includes a Miller clamp transistor which prevents spurious turn-ON during high <em>dV/dt</em> events by swiftly grounding the internal pGaN gate when the external gate is turned OFF. In ICeGaN devices, a <em>V<sub>dd</sub></em> supply powers the IC interface, and it has a finite contribution to the device power consumption dependent on operating conditions. The second series of ICeGaN products (H2) comprising of 55, 130 and 240 mΩ power devices, advances the ICeGaN concept with an intelligent fully integrated NL<sup>3</sup> circuit which aims at particularly minimizing the power losses under no-load and light-load conditions. When the external gate is in OFF state, the current consumption of the <em>V<sub>dd</sub></em> pin (<em>I<sub>dd</sub></em>) is reduced to near-zero (typical 70 µA) in H2 devices. In the gate ON state, the <em>I<sub>dd</sub></em> is reduced by 40 % (typical 1 mA) compared to H1 (typical 1.7 mA). This work presents the characterization and comparison of the 55 mΩ devices from the H2 and H1 ICeGaN product series.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"10 ","pages":"Article 100084"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143444631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs 衬底连接对650v封装GaN hemt动态漂移的影响

Power electronic devices and components Pub Date : 2025-02-11 DOI: 10.1016/j.pedc.2025.100083

M. Cioni , G. Giorgino , G. Cappellini , A. Chini , C. Miccoli , M.E. Castagna , A. Abbisogni , A. Contarino , F.A. Pizzardi , S. Smerzi , F. Iucolano

引用次数: 0

Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS 高横向分辨TOF-SIMS对结构GaN器件掺杂的研究

Power electronic devices and components Pub Date : 2025-02-10 DOI: 10.1016/j.pedc.2025.100082

Patrick Diehle , Stephan Gierth , Mickael Lejoyeux , Karen Geens , Matteo Borga , Frank Altmann

引用次数: 0

An electronic gear concept for optimized efficiency operation of automotive converters 一个优化汽车转换器效率运行的电子齿轮概念

Power electronic devices and components Pub Date : 2025-02-05 DOI: 10.1016/j.pedc.2025.100081

Tanya Thekemuriyil , Munaf T.A. Rahimo , Silvia Mastellone , Renato Amaral Minamisawa , Thiago Batista Soeiro

{"title":"An electronic gear concept for optimized efficiency operation of automotive converters","authors":"Tanya Thekemuriyil , Munaf T.A. Rahimo , Silvia Mastellone , Renato Amaral Minamisawa , Thiago Batista Soeiro","doi":"10.1016/j.pedc.2025.100081","DOIUrl":"10.1016/j.pedc.2025.100081","url":null,"abstract":"<div><div>In this article, the concept of an Adjustable Hybrid Switch (AHS) converter is proposed and its benefits in improving the energy efficiency of an electric vehicle (EV) over the whole range of the driving profile is investigated. The AHS transforms a standard electric vehicle (EV) inverter into an advanced “Electronic Gear (E-Gear)” system by introducing a Cross-Switch (XS) hybrid semiconductor. Replacing the single transistor in a conventional EV inverter with a unique combination of unipolar Silicon Carbide (SiC) MOSFETs and bipolar Silicon (Si) IGBTs in parallel, the AHS allows for varying ratios of SiC MOSFETs to Si IGBTs, adapting to the EVs shifting load profile. Specifically, the converter controller selectively activates each transistor using dedicated gate units allowing it to choose the most efficient area ratio of SiC MOSFETs to Si IGBTs in the specific operating point of the vehicle's real-time torque-speed profile. A detailed analysis of the AHS converter featuring the E-Gear mechanism is performed in this paper. A water-cooled power train prototype is designed to verify the advantages of the system studied.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"10 ","pages":"Article 100081"},"PeriodicalIF":0.0,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs AlGaN/GaN hemt高温反偏应力的TCAD分析

Power electronic devices and components Pub Date : 2025-02-05 DOI: 10.1016/j.pedc.2025.100080

Franco Ercolano , Luigi Balestra , Sebastian Krause , Stefano Leone , Isabel Streicher , Patrik Waltereit , Michael Dammann , Susanna Reggiani

{"title":"TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs","authors":"Franco Ercolano , Luigi Balestra , Sebastian Krause , Stefano Leone , Isabel Streicher , Patrik Waltereit , Michael Dammann , Susanna Reggiani","doi":"10.1016/j.pedc.2025.100080","DOIUrl":"10.1016/j.pedc.2025.100080","url":null,"abstract":"<div><div>The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. Before investigating the device behavior under high-temperature reverse-bias (HTRB) conditions, a fine tuning of the TCAD simulation setup was conducted by benchmarking against measured transfer, input, and output characteristics. This calibration step ensured an accurate representation of the device electrical performance, serving as a solid foundation for further TCAD stress analysis. Subsequently, the comparison between HTRB experimental results and the calibrated TCAD simulations was carried out to understand degradation mechanisms under stress conditions. The study particularly focuses on the role of passivation/cap interface traps, which are known to influence both the drain current (I<sub>D</sub>) and gate current (I<sub>G</sub>) over time. By varying key parameters such as trap density and energy levels, the impact of these traps on device performance is consistently explored. The simulations not only corroborate experimental findings but also provide deeper insights into the physical mechanisms driving current collapse, enabling more accurate predictions of long-term device behavior under high-stress conditions. These results contribute to the ongoing development of more reliable GaN-based technologies, emphasizing the importance of interface quality and trap management.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"10 ","pages":"Article 100080"},"PeriodicalIF":0.0,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143369828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0