Yiwen Gu, Berk Celik, Maxime Hachette, Manuela Sechilariu, Fabrice Locment
{"title":"Planning urban EV charging stations with GIS based multi-criteria decision making","authors":"Yiwen Gu, Berk Celik, Maxime Hachette, Manuela Sechilariu, Fabrice Locment","doi":"10.1016/j.pedc.2025.100132","DOIUrl":"10.1016/j.pedc.2025.100132","url":null,"abstract":"<div><div>With the accelerating adoption of electric vehicles (EV), strategic planning of charging infrastructure has become a critical component of sustainable urban mobility. The current EV charging points can be inadequately equipped to meet the rapidly increasing battery charging demand of EVs. Therefore, in this paper, a Geographic Information System (GIS)-based Multiple-Criteria Decision Analysis (MCDA) approach is adopted to help providing a solution of charging points location problem. Furthermore, the Analytical Hierarchy Process (AHP) and the Technique for Order Preference by Similarity to Ideal Solution (TOPSIS) are used to select the optimal charging station site. A five-step approach is developed: determination of 14 criteria across four perspectives, spatial analysis using QGIS, criteria prioritization with AHP, site ranking in use of TOPSIS, and site capacity estimation. By integrating these methodologies, optimal charging point locations can be identified while ensuring effective deployment and utilization of EV charging infrastructure. Through a complete and considerate analysis, the study identifies the three most appropriate alternative locations for EVs with/without including photovoltaic (PV) system. The results derived from the proposed methodology were cross-referenced with the spatial distribution of existing charging stations. Although most of the current installations coincided with the priority zones identified by the model, the analysis also revealed additional high-potential locations that are not currently equipped. A distinctive advantage of the methodology lies in its integrative framework, which not only enables optimal site selection but also incorporates an evaluation of feasible energy sources, with a particular focus on the potential for solar energy utilization.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100132"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145519280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Sensorless IPMSM drive with open-loop model-based parameter identification and Hessian-tuned estimator gains","authors":"Aravinda Perera, Roy Nilsen","doi":"10.1016/j.pedc.2025.100131","DOIUrl":"10.1016/j.pedc.2025.100131","url":null,"abstract":"<div><div>This article presents a position-sensorless Interior Permanent Magnet Synchronous Machine (IPMSM) drive scheme that incorporates an open-loop stator current predictor to identify electrical parameters and improve observer performance. Unlike classical observers, the proposed open-loop, full-order model is inherently sensitive to discrepancies between the physical and model parameters. Capitalizing on this sensitivity through current prediction error gradients (PEGs), the parameter estimator scheme identifies the temperature sensitive parameters, i.e., the permanent magnet flux linkage <span><math><msub><mrow><mi>Ψ</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span> and stator resistance <span><math><msub><mrow><mi>R</mi></mrow><mrow><mi>s</mi></mrow></msub></math></span>. An offline experimental method, utilizing the same prediction model, is proposed for mapping the inductance-current relationship, which is subsequently implemented in the processor using a look-up table (LUT). Rotor position and speed are estimated via an Active Flux Observer, with real-time updates to all model parameters. Furthermore, a novel approach for tuning the estimation gain matrix using customized Hessian functions is presented, enabling improved simultaneous identification of <span><math><msub><mrow><mi>Ψ</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span> and <span><math><msub><mrow><mi>R</mi></mrow><mrow><mi>s</mi></mrow></msub></math></span>. Experimental validation is conducted on a 3 kW IPMSM drive, with control and estimation routines implemented on a Zynq System-on-Chip (SoC)-based industrial embedded control platform. Results demonstrate that the proposed schemes enhance observer stability, precision, and robustness to parameter variations compared to conventional observers without parameter adaptation.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100131"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145519279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Paul Korn , Marcus Praast , Andreas Reinhold , Bela Truschenski , Thomas Komma
{"title":"Voltage generation for Sawyer-Tower Coss loss measurement based on resonant converters","authors":"Paul Korn , Marcus Praast , Andreas Reinhold , Bela Truschenski , Thomas Komma","doi":"10.1016/j.pedc.2025.100113","DOIUrl":"10.1016/j.pedc.2025.100113","url":null,"abstract":"<div><div>Output capacitance losses in modern semiconductor devices become increasingly relevant with fast switching power converters. One widely used method to measure such losses is the Sawyer-Tower circuit. A new voltage generation approach is proposed to handle the highly variable capacitive load in a Sawyer-Tower circuit. An LLC resonant converter is applied to generate the high voltage, high frequency sinusoidal excitation voltage, overcoming limitations of HF amplifiers. An external DC voltage source is introduced to prevent reverse conduction of the device under test, ensuring accurate charge-voltage (Q-V) characterization. Measurements under this voltage excitation are presented. The calculated dissipated energy is verified by thermal measurements observing the temperature rise of the DUT, showing less than 6% deviation. This article presents a scalable and practical setup for power semiconductor characterization at high voltages.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100113"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Felix Gesele , Christian Bäumler , Thomas Basler , Thomas Brückner
{"title":"Investigation on the short-circuit behavior of HV-SiC-MOSFETs in quasi series connection","authors":"Felix Gesele , Christian Bäumler , Thomas Basler , Thomas Brückner","doi":"10.1016/j.pedc.2025.100127","DOIUrl":"10.1016/j.pedc.2025.100127","url":null,"abstract":"<div><div>This paper investigates the short-circuit behavior of SiC MOSFETs in a quasi series connection, a scenario that can be found in more complex topologies, but also in simple two-level phase legs. Besides a theoretical analysis, short-circuit tests for such scenarios are carried out with state-of-the-art 3.3-kV SiC MOSFET half-bridge modules. The analysis particularly focuses on the voltage distribution between the switches within a half-bridge module, evaluating the impact of different device parasitics with impact on the gate circuit.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100127"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145415069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of energy storage solutions for ship maneuvering in ports","authors":"Marcos Lafoz, Gustavo Navarro, Marcos Blanco, Jorge Nájera, Eduardo Rausell, Javier Munilla","doi":"10.1016/j.pedc.2025.100109","DOIUrl":"10.1016/j.pedc.2025.100109","url":null,"abstract":"<div><div>The recent regulation about pollution reduction in port areas promotes the development of electric ships, at least to operate with no fuel during approach and departure. The paper presents an analysis of different energy storage alternatives for the case of power supply of a ferry during docking and undocking manoeuvres. Considering that the use of batteries does not fully comply with the maritime conditions, short-term energy storage technologies are studied as an alternative, specifically flywheels and supercapacitors. After the analysis of these systems, based on models parametrized from prototypes tested in the lab, neither of them is suitable for the case study. However, the use of a battery/supercapacitor hybrid energy storage provides a techno-economic feasible solution, especially under the situation of dimensioning the complete system according to the consumption profile of the ferry.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100109"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144829443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Li Fang , Lucas Riondet , Fatimata-Fatim Diarrassouba , Maud Rio , Pierre Lefranc , Jean-Christophe Crébier
{"title":"Parametric Life Cycle Assessment (LCA) of power modules","authors":"Li Fang , Lucas Riondet , Fatimata-Fatim Diarrassouba , Maud Rio , Pierre Lefranc , Jean-Christophe Crébier","doi":"10.1016/j.pedc.2025.100105","DOIUrl":"10.1016/j.pedc.2025.100105","url":null,"abstract":"<div><div>Power Electronics is a key factor in the electrification of our modern society. In the attempt of massive decarbonation, this fast-growing industry is going to put pressure on the environment. Life Cycle Assessment is used to identify the main impacts of products and services. The paper presents an open-source method to carry on a parametric LCA of power modules to help power electronics designers and engineers assess the environmental impacts of such devices when used in power converters. After recalling how is derived the open access LCI of a type of power modules, the method to implement Parametric LCA for this kind of device is introduced. It is then applied on a specific case study for automotive applications and main LCA results are provided to illustrate the method. The last section is dedicated to introduce several perspectives and applications of Parametric LCA to support ecodesign.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100105"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144549451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Multi-parameter detection of bond wire lift-off, current, and temperature in IGBT modules via gate voltage waveforms and CNNs with digital gate control","authors":"Thatree Mamee , Katsuhiro Hata , Makoto Takamiya , Takayasu Sakurai , Shin-ichi Nishizawa , Wataru Saito","doi":"10.1016/j.pedc.2025.100106","DOIUrl":"10.1016/j.pedc.2025.100106","url":null,"abstract":"<div><div>A new method for multi-parameter detection of bond wire lift-off, emitter current, and junction temperature using gate voltage waveforms and a convolutional neural network is proposed for the condition monitoring of power modules. This method was demonstrated to classify 80 levels for the full combination of various parameters. In addition, digital gate control (DGC) was utilized to improve not only the switching characteristics but also the detection accuracy. The experimental results show that the sensitivity of the gate voltage waveforms changed significantly due to the influence of the combined parameters. The detection accuracy depends on the control conditions of DGC, and optimized conditions achieved a high accuracy of over 96%, even for multi-parameter detection.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100106"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144502014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Guo , S. Liang , S. Ramachandran , H. Jiang , Y. Xu , Z. Zhong
{"title":"Microstructure-based fatigue analysis of SiC power module with sintered silver die attach","authors":"Z. Guo , S. Liang , S. Ramachandran , H. Jiang , Y. Xu , Z. Zhong","doi":"10.1016/j.pedc.2025.100121","DOIUrl":"10.1016/j.pedc.2025.100121","url":null,"abstract":"<div><div>Sintered silver offers excellent performance for die attach materials in power modules, but internal defects such as pores in sintered silver can deteriorate the mechanical behavior and overall lifetime of power modules. This work establishes a porous microstructure model of die attach sintered silver by combining the Gaussian filter technique with macro finite element analysis. The model provides topology information for the assignment of material properties to sintered silver and enables the investigation of the porous microstructure effect. The thermo-mechanical behavior and fatigue lifetime of the power modules with different thicknesses of sintered silver die attach layers under power cycling are examined. Results show that the simulated porous microstructure of sintered silver is in good agreement with the experiment; the stress and viscoplastic dissipation energy density are higher for the power modules with thinner sintered silver die attach layer, and there is a significant stress concentration near the interface between the chip and sintered silver. Increasing sintered silver layer thickness reduces accumulated viscoplastic strain and improves the fatigue lifetime of the SiC power module, and the simulation results are consistent with the experimental observation. Furthermore, the pores significantly reduce the fatigue lifetimes of the power modules. The findings of this work would provide valuable insights for thermo-mechanical analysis and fatigue lifetime prediction of SiC power modules considering porous microstructures of sintered silver.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100121"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145320112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Declaration/Conflict of Interest statement were not included in the published version of the following article, that appeared in issue Volume 5 2023 of Power Electronic Devices and Components","authors":"","doi":"10.1016/j.pedc.2025.100094","DOIUrl":"10.1016/j.pedc.2025.100094","url":null,"abstract":"","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100094"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144263679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications","authors":"Ndembi Ignoumba-Ignoumba , Camille Sonneville , Adrien Bidaud , Pierre Brosselard , Eric Frayssinet , Florian Bartoli , Yvon Cordier , Farid Medjdoub , Dominique Planson , Cyril Buttay","doi":"10.1016/j.pedc.2025.100100","DOIUrl":"10.1016/j.pedc.2025.100100","url":null,"abstract":"<div><div>This work presents physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers and associated quasi-vertical Schottky Barrier Diodes (SBDs). Samples’ GaN drift layers have globally a similar quality as examined by XRD, AFM Raman spectroscopy, C-V measurements and I-V characteristics. Some crystal defects in the GaN layer are identified by Raman spectroscopy and SEM, and their effect on the electrical characteristics of the diodes is assessed. Most of the SBDs have reverse current densities at −100 V that are comparable to that of some of the best vertical GaN-on-GaN SBDs, which can be correlated to drift layers’ doping homogeneity and dislocation density.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100100"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}