Physics of the Solid State最新文献

{"title":"Substrate-Engineered Plasmonic Silver Nanoparticles for Photovoltaic Applications","authors":"Manohar Singh,&nbsp;Mahesh Kumar,&nbsp;Amit Jain","doi":"10.1134/S1063783425603637","DOIUrl":"10.1134/S1063783425603637","url":null,"abstract":"<p>This research is focused on the effects of substrate type, deposition temperature, and annealing atmosphere on surface plasmon resonance (SPR) and structural development of silver (Ag) nanoparticles deposited in a process called pulsed laser deposition (PLD). Ag nanoparticles were deposited onto amorphous silica (glass) and crystalline indium tin oxide (ITO) substrates under vacuum in a 6 × 10^–6 Torr environment, and they were pre-heated and post-annealed. The structural, morphology, and optical properties were all examined through a combination of UV–Visible absorption, PL spectroscopy, XRD, and FESEM. Glass substrate films exhibited narrow, sharp SPR peaks (413–440 nm), whereas SPR peaks for ITO-supported films were broadened (472–573 nm) due to plasmon substrate interaction. Face-centered cubic structure of Ag was confirmed by XRD and improved crystallite size upon annealing. FESEM images indicated temperature-dependent grain coalescence and particle aggregation with diameters between 25 and 30 nm. Mie-equivalent diameters based on SPR wavelengths correlated with crystallite sizes from XRD analysis, confirming strong structure optical correlation. The research indicates that substrate selectivity and thermal processing both control the plasmonic and optical characteristics of Ag nanoparticles and offer tunable avenues for thin-film photovoltaic devices which may enable broadband absorption.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"561 - 570"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Investigation of Recessed-Gate Al0.28Ga0.72N/GaN HEMTs with β-Ga2O3 and BGaN Back-Barrier Layers","authors":"J. K. Kasthuri Bha,&nbsp;K. Ferents Koni Jiavana,&nbsp;T. Subhashini,&nbsp;Ramkumar Natarajan","doi":"10.1134/S1063783426600810","DOIUrl":"10.1134/S1063783426600810","url":null,"abstract":"<p>This study presents a comparative investigation of Al_0.28Ga_0.72N/GaN HEMTs incorporating β‑Ga₂O₃ and B_0.04Ga_0.96N back barrier (BB) layers.Two gate configurations, namely a conventional gate and a recessed T-gate structure, are analyzed to study their influence on electrostatic control, carrier confinement, and RF performance. The recessed gate structure significantly enhances gate control and transconductance compared to the normal gate configuration. The device with a BGaN back-barrier exhibits superior performance, achieving a maximum drain current of approximately 3.3 A/mm, peak transconductance of about 2.0 S/mm, and an improved cutoff frequency of nearly 160 GHz. Moreover, the recessed gate BGaN HEMT demonstrates the highest breakdown voltage of approximately 170 V and a significantly reduced leakage current of the order of 10^–10 A/mm. The results confirm that the combined implementation of a recessed gate architecture and a BGaN back-barrier a suitable for high-frequency GaN-based electronic applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"606 - 618"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Back Barrier Material on DC/RF Performance of AlN/GaN MOSHEMTs on SiC Wafers","authors":"Lavanya Repaka,&nbsp;J. Ajayan,&nbsp;Shuxiang Sun","doi":"10.1134/S1063783425604370","DOIUrl":"10.1134/S1063783425604370","url":null,"abstract":"<p>The paper is a systematic study of the effect of various back barrier materials-AlGaN, InGaN, InAlN, and AlN on the behavior of AlN/GaN MOSHEMTs. The performance metrics that are under study are the drain current (<i>I</i>_D), transconductance (<i>G</i>_M), threshold voltage (<i>V</i>_th), the gate capacitance (<i>C</i>_GG), and cut-off frequency (<i>f</i>_T). With proper back barrier layers, carrier confinement is increased resulting in better two-dimensional electron gas (2DEG) density and improved RF characteristics. Moreover, the effect of the thickness of the back barrier is also discussed in detail and the best thickness of each material is determined to achieve maximum device performance. The gate length scalability is also studied showing a decreasing short-channel effects (SCEs) and enhanced electrostatic control at nanoscale dimensions. The AlN/GaN MOSHEMT has a better performance among the studied structures, and the InGaN back barrier has been utilized. A device whose gate length (<i>L</i>_G) is 40 nm and whose InGaN back barrier is 60 nm has a peak drain current of 2.142 A/mm, transconductance of 320.86 mS/mm and cut-off frequency of 244.21 GHz. The main benefit of these is due to increased carrier confinement and lower leakage currents. This paper presents an overall comparative evaluation of the concept of back barrier engineering in AlN/GaN MOSHEMTs, and its importance in maximizing the performance of the device to next-generation RF and high-power electronics.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"651 - 662"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Performance of EPDM/SBR Rubber Composites through Surface-Modified Graphene Oxide","authors":"S. Vishvanathperumal,&nbsp;K. Manimaran","doi":"10.1134/S1063783426601153","DOIUrl":"10.1134/S1063783426601153","url":null,"abstract":"<p>This study explores the application of surface-functionalized graphene oxide (sGO) as a multifunctional nanofiller to enhance the performance of ethylene–propylene–diene monomer/styrene–butadiene rubber blends. Graphene oxide was chemically modified using bis(triethoxysilylpropyl)tetrasulfide (TESPT) to improve compatibility with the polymer matrix and promote strong interfacial interactions. The modified filler was incorporated into the rubber blend via melt mixing to evaluate its effect on curing behavior, mechanical properties, and solvent resistance. The study focuses on understanding the role of silane-assisted surface modification and filler dispersion in influencing the structural and functional properties of elastomer composites. This strategy offers valuable insights for the design of reinforced rubber systems with enhanced interfacial bonding and tailored performance for advanced engineering applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"633 - 644"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phonon and Elastic Properties of the AgSbTe2 Crystals: Experiment and Ab Initio Calculations","authors":"S. S. Ragimov,&nbsp;Z. A. Jahangirli,&nbsp;N. N. Hashimova,&nbsp;Z. I. Badalova,&nbsp;Yu. A. Abdullayev,&nbsp;A. E. Babayeva,&nbsp;S. S. Osmanova,&nbsp;N. A. Abdullayev","doi":"10.1134/S1063783426601062","DOIUrl":"10.1134/S1063783426601062","url":null,"abstract":"<p>The phonon properties of the AgSbTe₂ crystals have been experimentally investigated by Raman scattering and theoretically studied using ab initio density functional theory calculations. Using the Raman scattering data, the frequencies of Raman active optical modes have been determined. The origin of energy states has been established from ab initio calculations and the dispersion of phonon modes, partial densities of states projected onto atoms, and frequencies of optical phonons have been calculated. The elastic constants of the AgSbTe₂ crystals have been found and the bulk elastic moduli, shear and Young’s moduli, Poisson’s ratios, and velocities of propagation of longitudinal and transverse acoustic waves in different crystallographic directions have been determined.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"571 - 578"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic Structure and Optical Property of S–C Co-Doped SrTiO3 with Various Configurations for Visible Light Photocatalysis","authors":"Jinliang Yan,&nbsp;Chenyu Zhao,&nbsp;Keng-Te Lin,&nbsp;Xianghua Meng","doi":"10.1134/S1063783426601396","DOIUrl":"10.1134/S1063783426601396","url":null,"abstract":"<p>First-principles calculations based on density functional theory (DFT) were performed to investigate the effect of sulfur/carbon (S–C) anion co-doping on band structure, density of states and optical absorption of strontium titanate (SrTiO₃). As the key factor in determining photocatalytic activity of a photocatalyst, optical absorption is revealed by analyzing band structures and density of states. Finally, we find that all configurations of S–C anion co-doping SrTiO₃ can response to visible light more sufficiently than intrinsic SrTiO₃. Especially, S–C anion co-doping SrTiO₃ with S–CI configuration shows strongest optical absorption, which is an excellent candidate for photocatalyst in visible light region. It is very useful for decomposition of water into hydrogen and degradation of organic pollutants.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"625 - 632"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of Carbon Nanosheets Using SB3-12 as a Carbon Source","authors":"Jinyan Huang,&nbsp;Haichao Li,&nbsp;Jianxia Guo","doi":"10.1134/S1063783426601529","DOIUrl":"10.1134/S1063783426601529","url":null,"abstract":"<p>Carbon nanomaterials, as pivotal representatives of forefront nanotechnologies, are advancing at a remarkable pace, driving global scientific, industrial, and socio-economic progress. To explore a straightforward yet effective route for the precise control over the morphology and dimensions of carbon nanostructures, this study employed a confined in-situ carbonization strategy. This approach successfully enabled the efficient synthesis of carbon nanosheets with tunable thicknesses under varied synthesis conditions. The resulting carbon nanosheets were systematically characterized using a comprehensive suite of analytical techniques. Scanning electron microscopy (SEM) was employed to examine their morphology and thickness, while Raman spectroscopy, X-ray diffraction (XRD), and Fourier-transform infrared (FTIR) spectroscopy provided insights into their graphitic structure, crystallinity, and surface functional groups, respectively. Additionally, energy-dispersive X-ray spectroscopy (EDS) was utilized for elemental analysis. The data collected from these techniques were integral in guiding and refining the subsequent experimental design. It was hypothesized that by carefully modulating key synthesis parameters—primarily the concentration of the surfactant SB3-12, but also other conditions such as reaction temperature—carbon nanosheets could be efficiently synthesized within a unique reaction environment created by the physical encapsulation of a concentrated potassium sulphate solution. This experimental investigation holds significant value, as it contributes meaningful insights into the development of controllable synthetic methodologies for carbon nanostructures and provides a foundation for future research and application developments in this promising field.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"645 - 650"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lead-Free ZnSe:Al/EuHfS3/CBTS/Au Chalcogenide Perovskite Solar Cells","authors":"S. Saju,&nbsp;A. Revathy,&nbsp;A. Lakshmi Narayana,&nbsp;K. Nirmala Devi","doi":"10.1134/S1063783426601074","DOIUrl":"10.1134/S1063783426601074","url":null,"abstract":"<p>The toxicity and instability of lead-based perovskite absorbers necessitated the investigation of feasible lead-free replacements. Europium hafnium trisulfide (EuHfS₃), a lanthanide-substituted chalcogenide perovskite with an experimentally confirmed direct bandgap of around 1.6 eV, is investigated as a potential non-toxic absorber. The SCAPS-1D software systematically analyses the FTO/ZnSe:Al/EuHfS₃/CBTS/Au planar <i>n</i>–<i>i</i>–<i>p</i> device design under AM 1.5G standard test conditions. The absorber thickness, bulk defect density, ETL and HTL layer thicknesses, interface defect densities, doping concentrations, operating temperature, and parasitic resistances are systematically optimized. The solar cell configuration, FTO/ZnSe:Al/EuHfS₃/CBTS/Au, attains a PCE of 32.8%, <i>V</i>_OC of 1.1356 V, <i>J</i>_SC of 34.495 mA/cm², and a fill factor (FF) of 83.74%. These findings position EuHfS₃ as a high-performance lead-free chalcogenide perovskite absorber and offer practical design recommendations for experimental fabrication.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"579 - 595"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth of InSb from Moderately Pure Source Elements by Directional Solidification for Improved Economic Viability","authors":"Manas Ranjan Maharana,&nbsp;Nirmal Kumar Velu","doi":"10.1134/S1063783426600019","DOIUrl":"10.1134/S1063783426600019","url":null,"abstract":"<p>The purity and structural quality of semiconductor crystals are fundamental to their electronic and optoelectronic performance, making crystal quality a decisive factor in device efficiency. However, achieving such high-quality semiconductors requires high-purity (≥4N) source materials, which significantly raises production costs. To address this challenge, the present study investigates a cost-effective alternative by growing indium antimonide (InSb) crystals from moderately pure (2N) indium and antimony elements through directional solidification method. As the moderately pure source elements contain various impurities, their incorporation, redistribution during crystal growth, and the properties of the resulting crystal properties were systematically investigated. X-ray diffraction (XRD) and Rietveld refinement confirmed that the InSb crystals exhibited a cubic zinc-blende structure (space group <i>F</i>-43<i>m</i>), with a lattice parameter of 6.4819 Å and a unit-cell volume of 272.338 ų, reflecting high crystallinity and phase purity. Compositional analyses performed using SEM-EDX and atomic absorption spectroscopy (AAS) revealed a reduction in impurities, with total levels decreasing from 43.54 at % in the starting materials to 24.29 at % in the grown InSb crystal. Transition metals such as Fe, Cu, Zn, Mn, Co, and Ni were effectively suppressed, whereas Al, Bi, and Pb were partially or strongly incorporated into the grown crystal owing to their higher segregation coefficients. Hall-effect measurements indicated <i>p</i>-type conductivity, with a carrier concentration of 3.47 × 10¹⁹ cm^–3 and a resistivity of 5.298 × 10^–4 Ω cm, thereby demonstrating the good electrical properties of the grown crystal. These findings demonstrate that directional solidification effectively reduces impurity levels and enables the growth of InSb crystals from low-grade source materials, thereby offering a scalable, cost-efficient alternative to conventional purification technique such as zone refining for semiconductor applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"596 - 605"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mathematical Modeling of Temperature Fields and Structure Evolution in VT1-0 Titanium under Electron Beam Treatment for Increasing the Fatigue Life","authors":"A. V. Ionina","doi":"10.1134/S1063783426601311","DOIUrl":"10.1134/S1063783426601311","url":null,"abstract":"<p>The effect of the pulsed electron beam treatment on the fatigue life and structural-phase state of commercially pure VT1-0 titanium has been investigated. It has been found using scanning and transmission electron microscopy that the fatigue failure in the untreated material is initiated by the formation of a critical nanocrystalline structure in the ~2 μm-thick subsurface layer, which has exhausted its plasticity resource. The electron beam treatment with an energy density of 25 J/cm² has been shown to increase the fatigue life by a factor of 2.2. The strengthening effect has been found to originate from the formation of a multilayer gradient structure in the ~30 μm-thick surface layer consisting of a layer with lamellar morphology, a layer with a mixed lamellar‒subgrain structure, and a heat-affected zone. This structure results from rapid crystallization of the molten surface layer and exhibits the enhanced resistance against cyclic loading.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"619 - 624"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}