Physics of the Solid State最新文献_第5页

Ab Initio Study of Y Doping Effects on Electronic Structure and Magnetic Properties in Rh2Mn1–xYxZ (Z = Ge, Sn) Y 掺杂对 Rh2Mn1-xYxZ （Z = Ge、Sn）中电子结构和磁性能影响的 Ab Initio 研究

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-10-02 DOI: 10.1134/S1063783423600401

A. Lekhal, F. Z. Benkhelifa, A. Zaoui

{"title":"Ab Initio Study of Y Doping Effects on Electronic Structure and Magnetic Properties in Rh2Mn1–xYxZ (Z = Ge, Sn)","authors":"A. Lekhal, F. Z. Benkhelifa, A. Zaoui","doi":"10.1134/S1063783423600401","DOIUrl":"10.1134/S1063783423600401","url":null,"abstract":"The electronic and magnetic properties of the doped Heusler alloys Rh2Mn1–xYxGe and Rh2Mn1‒xYxSn (x = 0, 0.25, 0.5, 0.75, 1) have been performed within the first-principles density functional theory (DFT) using the generalized gradient approximation (GGA) scheme, with the disordered structures. The calculated results reveal that with increasing Y content, the lattice parameter slightly increases except x = 0.5 for Rh2Mn1–xYxSn. For both quaternary alloys it is found the local moments of Mn(Y) and Rh basically show a linear decreasing trend with increasing doping concentration and the total magnetic is negligible for x = 1. The minority-spin band component at the Fermi level for Rh2Mn1–xYxGe and Rh2Mn1–xYxSn decreases while the majority-spin band component at the Fermi is less affected with the substitution of Y atoms for Mn atoms.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 9","pages":"279 - 290"},"PeriodicalIF":0.9,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142409469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of Spin-Polarized Current Induced Domain Wall Velocity in a Magnetic Nano Stripe Using Sinc Pulse—A Computational Study 利用 Sinc 脉冲优化磁性纳米条纹中自旋极化电流诱导的畴壁速度--计算研究

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424600572

Madhurima Sen, Saswati Barman

{"title":"Optimization of Spin-Polarized Current Induced Domain Wall Velocity in a Magnetic Nano Stripe Using Sinc Pulse—A Computational Study","authors":"Madhurima Sen, Saswati Barman","doi":"10.1134/S1063783424600572","DOIUrl":"10.1134/S1063783424600572","url":null,"abstract":"Domain wall propagation and domain wall structure in spin dynamics play a crucial role in the development of new efficient memory devices. A transverse domain wall in the finite straight permalloy nanostrip has been investigated by applying the different normalized sinc current pulses and observing its motion. In addition, it has been observed that domain wall velocity gradually increases with the increase of the pulse period of the sinc pulse current. Furthermore, the pulse scale plays another crucial role in improving the domain wall velocity. Domain Wall velocity can be increased again by changing the non-adiabatic parameter. This study has successfully found the optimal values of the non-adiabatic parameter β and a scaler factor k that can be multiplied to pulse scale resulting in the highest domain wall velocity in particularly low current. It significantly established another control mechanism on the domain wall by varying the pulse scale and pulse period of the sinc pulse current. The present work shows that domain wall motion inside magnetic nano strips may be controlled with high efficiency and reliability using spin-polarized current pulse by solving the LLG equation and the object oriented micromagnetic framework (OOMMF) simulator. The development of racetrack memory technologies with enhanced data storing capacity will be significantly impacted by this study.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 8","pages":"235 - 244"},"PeriodicalIF":0.9,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the Performance of Optimized Color-Sensitive Solar Cells 关于优化色敏太阳能电池性能的研究

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424600687

Ari Karim Majid, Zhaleh Ebrahiminejad, Somayeh Asgary

引用次数: 0

High Performance ZnSe-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with Different Schottky Contacts 具有不同肖特基触点的高性能 ZnSe 基金属-半导体-金属紫外线光电探测器

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424601164

V. P. Sirkeli, O. Yilmazoglu, A. S. Hajo, N. D. Nedeoglo, D. D. Nedeoglo, F. Küppers, H. L. Hartnagel

{"title":"High Performance ZnSe-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with Different Schottky Contacts","authors":"V. P. Sirkeli, O. Yilmazoglu, A. S. Hajo, N. D. Nedeoglo, D. D. Nedeoglo, F. Küppers, H. L. Hartnagel","doi":"10.1134/S1063783424601164","DOIUrl":"10.1134/S1063783424601164","url":null,"abstract":"We report on fabrication and characterization of high-performance ZnSe-based metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors with different Schottky contacts (Cr/Au, Ni/Au, Ag‑nanowire (Ag-NW)) and device structures (conventional planar contacts, interdigitated contacts, hybrid nanowire contacts). At room temperature, the low values of dark current of 0.71, 0.59, and 0.36 nA at bias voltage of 15 V were achieved for devices with Cr/Au, Ni/Au, and hybrid Ni/Au and Ag-NW contacts, respectively. A very high responsivity of 5.40 A W–1 and detectivity of 3.4 × 1011 cm W–1 Hz1/2 at bias voltage of 15 V for light with a wavelength of 325 nm is obtained for UV photodetector with Ni/Au interdigitated contacts. The best performance of devices with Ni/Au interdigitated contacts due to the higher Schottky barrier height of ~1.49 eV for Ni/Au contacts in comparison with ~1.26 eV for Cr/Au contacts is found. The measured response times of all UV photodetectors is in the µs-range and is limited by the RC time of the measurement system. Thus, this study demonstrates the high potential of ZnSe-based MSM structures with Ni/Au interdigitated and hybrid Ni/Au and Ag-NW contacts as a high-sensitive ultrafast UV photodetectors, which are promising for the applications, such as UV tomography and UV high-speed communication systems.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 8","pages":"257 - 264"},"PeriodicalIF":0.9,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultra-Low Thermal Conductivity of Germanium Nanowires 超低导热率的锗纳米线

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424601127

A. V. Pavlikov, A. M. Sharafutdinova, C. I. Isacova, A. I. Cocemasov, D. L. Nika

引用次数: 0

Investigation of Magnetic and Topography Properties for Fe50Co50 Various Thicknesses of Thin Film Grown on Glass Substrate by Using UHV RF Magnetron Sputtering 利用超高压射频磁控溅射技术研究玻璃基底上生长的不同厚度 Fe50Co50 薄膜的磁性和形貌特性

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424600936

G. Manikandan

{"title":"Investigation of Magnetic and Topography Properties for Fe50Co50 Various Thicknesses of Thin Film Grown on Glass Substrate by Using UHV RF Magnetron Sputtering","authors":"G. Manikandan","doi":"10.1134/S1063783424600936","DOIUrl":"10.1134/S1063783424600936","url":null,"abstract":"Since magnetic energy is exchanged across spin domains, magnetic anisotropy is important for applications using spintronic devices. FeCo is unique among d-block magnetic materials because of its strong spin polarization and higher-than-room-temperature of Curie temperature. In current day-to-day electrical applications, dimensions shrink down to the nanoscale range. It has been demonstrated that the thin film technique improves these materials’ basic characteristics. The FeCo thin film was prepared on a glass substrate with various thicknesses such as 10, 30, and 50 nm. The magnetic properties and surface were investigated to corresponding thicknesses at room temperature by using the AFM and VSM techniques, respectively. The magnetic properties varied by the topography nature of the prepared thin films and all the thickness films exhibited the hysteresis loop that confirmed that thin film has a magnetic nature at room temperature. For spin valve devices, electrode preferences differ; instead, the same magnetic material with varying thicknesses may be used as top and bottom electrodes.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 8","pages":"245 - 249"},"PeriodicalIF":0.9,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Post-Annealing Treatments on Third-Order Nonlinear Optical Properties in ZnO Thin Films 退火后处理对氧化锌薄膜三阶非线性光学特性的影响

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424600754

Sanjeev Kumar, Amit Jain, N. Santakrus Singh, Manohar Singh

引用次数: 0

TCAD Design of Deep-Ultraviolet LED Based on ZnO/AlGaN Multiple Quantum Wells with Tunable Wavelength 基于 ZnO/AlGaN 多量子阱的可调谐波长深紫外 LED 的 TCAD 设计

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600791

Jie Chen, Chenxing Jiang, Yifan Yang, Zhendong Ge, Yaqi Han, Tianyou Zhang, Feng Chen, Ying Yang, Zhiyuan Yao, Jiwei Hou, Dawei Gu, Lei Wang

{"title":"TCAD Design of Deep-Ultraviolet LED Based on ZnO/AlGaN Multiple Quantum Wells with Tunable Wavelength","authors":"Jie Chen, Chenxing Jiang, Yifan Yang, Zhendong Ge, Yaqi Han, Tianyou Zhang, Feng Chen, Ying Yang, Zhiyuan Yao, Jiwei Hou, Dawei Gu, Lei Wang","doi":"10.1134/S1063783424600791","DOIUrl":"10.1134/S1063783424600791","url":null,"abstract":"Multiple quantum-wells light-emitting diodes (MQWs-LEDs) are high-performance electroluminescent light sources, which is widely used in solid state lighting, medical, industrial and other fields. Understanding the light emission origin and mechanisms of MQWs-LEDs is crucial for their practical applications. Here, we show the excellent ultraviolet (UV) and deep-ultraviolet (DUV) emissions from ZnO/AlGaN MQWs-LEDs using Technology Computer Aided Design (TCAD) simulation, which deviates from the typical ZnO heterojunction LEDs. The adjustment of the structural parameters of the MQWs was performed to control the emission wavelength in the range of 335–366 nm. After parameter optimization, 342.6–348.7 nm DUV EL from ZnO/AlGaN MQWs is obtained successfully. The deconvolution analysis of the EL spectra was conducted to investigate the origin of the emissions. The results indicate that the structural parameter operation-induced emission blue-shift results from the quantum confinement effect. This work provides new references for designing ZnO-based MQWs and preparing new DUV LEDs.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 7","pages":"214 - 220"},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Magnetic, and Electrical Properties in Ba-Doped BiFeO3 Prepared Using a Sol–Gel Route 采用溶胶-凝胶法制备的掺钡 BiFeO3 的结构、磁性和电性能

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600845

Sachin D. Rajadhyax, Sangeeta G. Dahotre, Rajib Mondal, Umesh L. Shinde, Pranav P. Naik, Snehal Hasolkar

{"title":"Structural, Magnetic, and Electrical Properties in Ba-Doped BiFeO3 Prepared Using a Sol–Gel Route","authors":"Sachin D. Rajadhyax, Sangeeta G. Dahotre, Rajib Mondal, Umesh L. Shinde, Pranav P. Naik, Snehal Hasolkar","doi":"10.1134/S1063783424600845","DOIUrl":"10.1134/S1063783424600845","url":null,"abstract":"Ba-doped bismuth ferrite with chemical composition Bi1 – xBaxFeO3 (x = 0.1, 0.2, 0.3, 0.4, and 0.5) nanoparticles were synthesized by the wet chemical sol–gel method. The substitution of Ba2+ at the Bi3+ site was meant to improve the resistivity, enhance magnetic properties, and suppress the impurity phases of BiFeO3. The samples synthesized were later subjected to X-ray diffraction (XRD) analysis, Field emission scanning electron microscope (FESEM) with energy dispersive spectroscopy (EDS), Magnetic measurements using a vibrating sample magnetometer (VSM) and dielectric analysis along with ferroelectric measurements. XRD patterns obtained at room temperature revealed that the obtained samples are single-phase materials. The crystallite size showed a decrease from 46 to 24.58 nm and the unit cell volume was found to increase following Vegard’s law. The increase in tolerance factor from 0.855 to 0.908 was reported for increasing doping concentrations. The FESEM and SEM micrographs indicate that the particles are rhombohedral-hexagonal in shape. The EDS results confirm the presence of the desired elements Ba, Bi, Fe, and O and the proportionate composition of various elements present as well. The room temperature M–H curve and the M–H curve at 3 K also confirm the enhancement in magnetization with increasing doping concentration. The room temperature dielectric measurements reveal the improving resistivity of the samples with increasing doping concentrations. The increasing grain resistance as revealed by the Cole-Cole plots indicate the decreasing conductivity of doped BFO samples. The P–E measurements confirm the ferroelectric nature of the material.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 7","pages":"221 - 234"},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atmospheric Pressure Chemical Vapor Deposition Grown One-Dimensional ZnO Nanostructures 常压化学气相沉积生长的一维氧化锌纳米结构

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600742

Zahra Mohammed Saeed, Yasir Hussein Mohammed, Samir Mahmmod Ahmad

{"title":"Atmospheric Pressure Chemical Vapor Deposition Grown One-Dimensional ZnO Nanostructures","authors":"Zahra Mohammed Saeed, Yasir Hussein Mohammed, Samir Mahmmod Ahmad","doi":"10.1134/S1063783424600742","DOIUrl":"10.1134/S1063783424600742","url":null,"abstract":"One-dimensional (1D) zinc oxide (ZnO) nanostructures (NSs) as nanowires (NWs) and columnar nanoflakes (NFs) were prepared by atmospheric pressure chemical vapor deposition (APCVD) system. The effect of different thermal treatment times (0, 1, 2, and 3 h) on the physical properties of the grown ZnO NWs was methodically investigated. Further, the surface morphology of such 1D ZnO NSs was studied under different substrates (glass and silicon (Si)). The samples revealed that the synthesized ZnO NWs strongly depended on the thermal treatment time. Prepared samples were well characterized using ultraviolet visible (UV-Vis) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), and energy-dispersive X-ray (EDX) spectroscopy. The optical band gap (Eg) widened from 3.2 to 3.3 eV as the thermal treatment time increased and the transmittance of the NWs improved to approximately 75%, accompanied by a blue-shift at the UV absorption edge. FTIR results disclosed that ZnO absorption bands in the region between 445.5 and 478.3 cm–1 have appeared from interatomic vibrations owing to the stretching of the Zn–O bond. XRD findings of the studied samples disclosed the polycrystalline hexagonal wurtzite structure with preferred orientation along the c-axis. According to the FESEM images, the morphological transition of the hierarchical ZnO NWs to individual NWs architectures was accomplished by increasing the treatment time from 0 to 3 h. Also, FESEM images indicated that the substrate type played a crucial role in determining the morphologies of 1D ZnO NSs. EDX outcomes showed a little Zn deficiency in the prepared samples with slightly different stoichiometric ratios between Zn and O atoms. Our current work could form the foundation for fabricating future nano-optoelectronic devices.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 7","pages":"201 - 213"},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0