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Theoretical Calculation of the Structural, Electronic, and Magnetic Properties of a New Rare-Earth Based Full Heusler Alloys Pr2CoZ (Z = Al, Ga, In) 新型稀土基全 Heusler 合金 Pr2CoZ（Z = Al、Ga、In）的结构、电子和磁性能的理论计算
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600699
S. Rouag, D. Amari
{"title":"Theoretical Calculation of the Structural, Electronic, and Magnetic Properties of a New Rare-Earth Based Full Heusler Alloys Pr2CoZ (Z = Al, Ga, In)","authors":"S. Rouag,&nbsp;D. Amari","doi":"10.1134/S1063783424600699","DOIUrl":"10.1134/S1063783424600699","url":null,"abstract":"<p>The full potential linearized augmented plane wave (FP-LAPW) method, employing density functional theory (DFT) within the generalized gradient approximation (GGA), is utilized to investigate the structural, electronic and magnetic characteristics of the rare earth element based Pr<sub>2</sub>CoX (X = Al, Ga, In) full Heusler compounds. The results indicate that, at the equilibrium volume, the Hg<sub>2</sub>CuTi-type structure is energetically more stable than the Cu<sub>2</sub>MnAl-type structure for Pr<sub>2</sub>CoX (X = Al, Ga, In). The electronic band structure of Pr<sub>2</sub>CoX (X = Al, Ga, In) reveals an indirect band gap with the minority spin, suggesting half-metallic behavior. The calculations of magnetic properties affirm the half-metallic nature of these compounds, with total magnetic moment of 3.99 μB.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 6","pages":"176 - 183"},"PeriodicalIF":0.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor 氮化铝缓冲层厚度对 In0.17Al0.83N/GaN 高电子迁移率晶体管电子和电气特性的影响
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600766
Abdelmalek Douara, Abdelaziz Rabehi, Mawloud Guermoui, Rania Daha, Imad Eddine Tibermacine
{"title":"Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor","authors":"Abdelmalek Douara,&nbsp;Abdelaziz Rabehi,&nbsp;Mawloud Guermoui,&nbsp;Rania Daha,&nbsp;Imad Eddine Tibermacine","doi":"10.1134/S1063783424600766","DOIUrl":"10.1134/S1063783424600766","url":null,"abstract":"<p>In this paper, we delved into the intricacies of In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN high-electron-mobility transistors (HEMTs) using a comprehensive simulation model and by Leveraging the capabilities of Nextnano simulation software. We extensively explored how different thicknesses of the AlN buffer layer impact electronic and electrical properties. Our study was centered on scrutinizing the density and mobility of the two-dimensional electron gas (2-DEG) within the In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN HEMT structure. Aiming to understand how different AlN buffer layer thicknesses impact device performance. Our findings unveil a crucial relationship between AlN buffer layer thickness and critical performance metrics. Specifically, we observed significant trends in output current and transconductance, shedding light on the direct influence of AlN thickness on device behavior. Our simulations identified an optimal AlN thickness of 350 nm, demonstrating the highest output current and surpassing a transconductance peak of 510 mS/mm. Importantly, our computational predictions closely align with experimental observations, validating the reliability and accuracy of our simulation model. Through this meticulous analysis, we contribute valuable insights that can guide the design and optimization of In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN HEMT, paving the way for improved device performance and functionality across various electronic applications. Our study underscores the importance of considering AlN buffer layer thickness in designing and engineering high-performance HEMTs, highlighting avenues for future research and development in semiconductor device technology.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 6","pages":"157 - 164"},"PeriodicalIF":0.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructural, Morphological, and Magnetic Features of the Triple Perovskite Oxide La3Mn2FeO9 三重包晶氧化物 La3Mn2FeO9 的微结构、形态和磁性特征
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600663
Raghad K. Aljurays, Aicha Loucif
{"title":"Microstructural, Morphological, and Magnetic Features of the Triple Perovskite Oxide La3Mn2FeO9","authors":"Raghad K. Aljurays,&nbsp;Aicha Loucif","doi":"10.1134/S1063783424600663","DOIUrl":"10.1134/S1063783424600663","url":null,"abstract":"<p>Triple perovskite La<sub>3</sub>Mn<sub>2</sub>FeO<sub>9</sub> powder was synthesized via the sol gel method. The microstructural, morphological and magnetic features of the prepared perovskite sample were examined by means of X‑ray diffraction (XRD), filed-emission scanning electron microscopy (FE-SEM), and vibrating sample magnetometry (VSM). The XRD pattern was refined using the MAUD software based on the Rietveld program. The results confirmed that the sample crystallized in a trigonal structure, with a crystallite size measuring approximately 257 ± 5 nm and a microstrain of about 0.16%. The FE-SEM image revealed spherical like-particles with an average grain size in the vicinity of 514 nm. The VSM curve revealed that the prepared La<sub>3</sub>Mn<sub>2</sub>FeO<sub>9</sub> powder exhibited a ferromagnetic behavior, and subsequent fitting using the law of approach to saturation revealed a saturation magnetization of 1.156438 ± 0.00384 emu/g.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 6","pages":"165 - 168"},"PeriodicalIF":0.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Production and Characterization of Zn1 – xFexS Thin Films by Ultrasonic Chemical Spray Deposition Technique 利用超声波化学喷雾沉积技术制备 Zn1 - xFexS 薄膜并确定其特性
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600857
Tuba Solakyildirim, Umit Alver
{"title":"Production and Characterization of Zn1 – xFexS Thin Films by Ultrasonic Chemical Spray Deposition Technique","authors":"Tuba Solakyildirim,&nbsp;Umit Alver","doi":"10.1134/S1063783424600857","DOIUrl":"10.1134/S1063783424600857","url":null,"abstract":"<p>In this study, Zn<sub>1 –</sub> <sub><i>x</i></sub>Fe<sub><i>x</i></sub>S thin films were synthesized using the chemical spray pyrolysis technique at a substrate temperature of 450°C and with varying Fe concentrations. The spraying solution was prepared by combining distilled water with 0.05 M zinc chloride (ZnCl<sub>2</sub>), 0.05 M iron chloride (FeCl<sub>3</sub>⋅6H<sub>2</sub>O), and 0.2 M thiourea ((NH<sub>2</sub>)<sub>2</sub>CS). The initial solution was atomized onto heated glass substrates using an ultrasonic nebulizer operating at a frequency of 1.63 MHz and dry air. The morphology of the films was examined by scanning electron microscopy (SEM). The crystal structures were determined by X-ray diffraction analysis (XRD). The optical properties of the films were analyzed using a UV spectrometer. The energy band gap of the films was defined using the absorption spectrum.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 6","pages":"169 - 175"},"PeriodicalIF":0.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-Principles Study of Structural Stability and Tensile Strengths of Light-Element-Doped ZrTi 光元素掺杂锆钛结构稳定性和拉伸强度的第一原理研究
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-07-19 DOI: 10.1134/S106378342460064X
Shouxin Cui, Wenxia Feng, Bao Zhao, Guiqing Zhang, Feng Guo, Zengtao Lv
{"title":"First-Principles Study of Structural Stability and Tensile Strengths of Light-Element-Doped ZrTi","authors":"Shouxin Cui,&nbsp;Wenxia Feng,&nbsp;Bao Zhao,&nbsp;Guiqing Zhang,&nbsp;Feng Guo,&nbsp;Zengtao Lv","doi":"10.1134/S106378342460064X","DOIUrl":"10.1134/S106378342460064X","url":null,"abstract":"<p>ZrTi alloys have potential applications in critical parts of spacecraft. As lightweight design is a fundamental requirement for spacecraft, incorporating light elements into ZrTi alloys is a feasible approach. In this paper, we investigated the tensile deformation behavior of ZrTi doped with light element by using the plane-wave pseudopotential density functional method. Covalent Ti–Zr bonds accommodate deformation by softening and breaking at large tensions, and structural stability of ZrTi and ZrTiX (X = B, Al, Ga, and V) is determined by the strength of these Ti–Zr bonds under tension. The results show that the lower doped concentrations of light element decrease the tensile strengths. However, there is no obvious difference in tensile strengths along [11<span>(bar {2})</span>0] direction between ZrTi and ZrTi<sub>0.875</sub>Al<sub>0.125</sub>. The results of Mulliken overlap populations indicate that different tensile strengths of ZrTiX should be resulted from different strengths of covalent Ti–Zr bonds. The incorporation of light element dopants does not strengthen all chemical bonds and weakens strengths of covalent Ti–Zr bonds, indicating that experimental strengthening mechanism of ternary ZrTiX alloys could be ascribed to Hall–Petch effect.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 5","pages":"129 - 138"},"PeriodicalIF":0.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Temperature and Pressure on Low-Frequency Raman Scattering from Strontium Tantalate Ceramic Material 温度和压力对钽酸锶陶瓷材料低频拉曼散射的影响
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-07-19 DOI: 10.1134/S1063783424600559
Jizhen Hui, Anwar Hushur, Amat Hasan, Seiji Kojima, Abliz Mattursun
{"title":"Effect of Temperature and Pressure on Low-Frequency Raman Scattering from Strontium Tantalate Ceramic Material","authors":"Jizhen Hui,&nbsp;Anwar Hushur,&nbsp;Amat Hasan,&nbsp;Seiji Kojima,&nbsp;Abliz Mattursun","doi":"10.1134/S1063783424600559","DOIUrl":"10.1134/S1063783424600559","url":null,"abstract":"<p>The temperature and pressure dependences of low-frequency Raman scattering were studied on structural phase transformations of Sr<sub>2</sub>Ta<sub>2</sub>O<sub>7</sub> ceramics. The Raman spectrum was measured over a temperature range from 0 to –185°C. The temperature dependence of the Raman shift of a low-lying mode of the <i>B</i><sub>1<i>g</i></sub> symmetry shows at <i>T</i> = –110°C. This anomaly of Sr<sub>2</sub>Ta<sub>2</sub>O<sub>7</sub> is related to a ferroelectric phase transition. During cooling, the peak width of the <i>B</i><sub>1<i>g</i></sub> mode shows a change at 150°C, and the temperature dependence of Raman shifts of <i>B</i><sub>3<i>g</i></sub>, and <i>B</i><sub>1<i>g</i></sub> modes becomes abnormal. Under high pressure, we discovered a phase transition between 4 and 5.5 GPa. Angle-dispersive X-ray diffraction data suggest the phase transition from incommensurate to commensurate states.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 5","pages":"121 - 128"},"PeriodicalIF":0.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the Effect of Exchange and Correlation Potential on the Electronic Properties of Mercury Chalcogenides 交换电位和相关电位对钙化汞电子特性影响的研究
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-07-19 DOI: 10.1134/S1063783424600730
B. Benabdelkrim, T. Ghaitaoui, B. Amrani, A. E. Ghaitaoui, I. Arbaoui
{"title":"Study of the Effect of Exchange and Correlation Potential on the Electronic Properties of Mercury Chalcogenides","authors":"B. Benabdelkrim,&nbsp;T. Ghaitaoui,&nbsp;B. Amrani,&nbsp;A. E. Ghaitaoui,&nbsp;I. Arbaoui","doi":"10.1134/S1063783424600730","DOIUrl":"10.1134/S1063783424600730","url":null,"abstract":"<p>In this work, we present first-principles DFT calculations to predict the structural and electronic properties of HgX (X = S, Se, and Te) compounds. First-principles methods using the local density approximation (LDA) and generalized gradient approximation (GGA) lead to an underestimation of the band gap energy. The objective of this work is to use various exchange and correlation potentials (LDA, GGA-PBE, EVGGA, MBJGGA, MBJLDA, etc.) to determine the band gap energy and electronic properties. We show that the use of the modified Becke–Johnson (mBJ) approximation leads to very good agreement with the experimental band gap energies for mercury chalcogenides.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 5","pages":"139 - 148"},"PeriodicalIF":0.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Study of Symmetrical 1D Photonic Crystal as a Blood Cancer Sensor 对称一维光子晶体作为血癌传感器的理论研究
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-07-19 DOI: 10.1134/S1063783424600602
K. Ben Abdelaziz, O. Soltani, M. Kanzari
{"title":"Theoretical Study of Symmetrical 1D Photonic Crystal as a Blood Cancer Sensor","authors":"K. Ben Abdelaziz,&nbsp;O. Soltani,&nbsp;M. Kanzari","doi":"10.1134/S1063783424600602","DOIUrl":"10.1134/S1063783424600602","url":null,"abstract":"<p>In this work, we studied by simulation the performance of a cancer sensor based on 1D symmetrical photonic crystal. The proposal 1D photonic crystal structure is (AB)<sup>5</sup>C(BA)<sup>5</sup> where A = TiO<sub>2</sub> with high refractive index, B = SiO<sub>2</sub> with low refractive index and layer C is a blood cell. The study was conducted using the Transfer Matrix method (TMM) method. So, the transmissions spectra, the sensitivity as well as the quality factor of the sensor for different blood cell samples including normal blood cells and various cancerous blood cells: Jurkat, HeLa, PC-12, MDA-MB-231, and MCF-7 were obtained. The obtained results have shown the improvement in the performance of the proposal 1D photonic crystal sensors, namely sensitivity and quality factor, as a function of the thickness of the sample layer C and the angle of incidence in case of the two polarization mode.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 5","pages":"149 - 156"},"PeriodicalIF":0.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects 具有屏蔽效应的 ZnMgO/ZnO 异质结构的迁移特性
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-06-24 DOI: 10.1134/S1063783423600061
Z. Yarar, M. D. Alyörük, H. C. Çekil, B. Özdemir, M. Özdemir
{"title":"Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects","authors":"Z. Yarar,&nbsp;M. D. Alyörük,&nbsp;H. C. Çekil,&nbsp;B. Özdemir,&nbsp;M. Özdemir","doi":"10.1134/S1063783423600061","DOIUrl":"10.1134/S1063783423600061","url":null,"abstract":"<p>The electron mobility characteristics of a ZnMgO/ZnO heterostructure are systematically investigated by an ensemble Monte Carlo method. Screening effects are included in all electron scattering mechanisms. The mobilities are calculated for a temperature range of 4 to 300 K and Mg contents ranging from 8.5 to 44%. In this range, dislocation scattering (DS) and interface roughness scattering (IFR) are highly effective for low and high values of Mg compositions, respectively. Screening effects must be considered in scattering mechanisms to achieve a reasonable agreement with existing experimental results. Our findings could be significant for the design and optimization of ZnO-based devices.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 4","pages":"91 - 98"},"PeriodicalIF":0.9,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141503211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring the Spin Torque Diode Effect in Low Dimensional Magnetic Multilayer Structure 探索低维磁性多层结构中的自旋扭矩二极管效应
IF 0.9 4区 物理与天体物理
Physics of the Solid State Pub Date : 2024-06-24 DOI: 10.1134/S1063783424600626
Rishma Thilakaraj, Kanimozhi Natarajan, Amuda Rajamani, Brinda Arumugam
{"title":"Exploring the Spin Torque Diode Effect in Low Dimensional Magnetic Multilayer Structure","authors":"Rishma Thilakaraj,&nbsp;Kanimozhi Natarajan,&nbsp;Amuda Rajamani,&nbsp;Brinda Arumugam","doi":"10.1134/S1063783424600626","DOIUrl":"10.1134/S1063783424600626","url":null,"abstract":"<p>This study investigates the impact of spin torque diode (STD) effect in a composite spin valve pillar, comprising distinct magnetic and non-magnetic layers arranged as AF/F0/NM1/F1/NM2/F2. Our investigation delves into the foundational mechanisms governing the STD effect within this magnetic multilayer system. Through the utilization of the composite spin valve pillar as a dynamic platform, we unravel the intricate interplay between spin-dependent charge transport and magnetic fields. Our inquiry is to understand diverse structural parameters, allowing us to unveil its operational capabilities and optimize its functionality across varied operating conditions. Furthermore, our exploration encompasses the quantification of detection sensitivity, scrutinizing the relationship between output voltage and applied input power. In our study, we have done an analysis of crucial parameters such as current, resistance, and sensitivity in the STD system. Our findings showcase the manifestation of the spin diode effect in low-dimensional magnetic structure. This finding indicates the feasibility of fabricating a spin diode device with diverse potential applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 4","pages":"113 - 120"},"PeriodicalIF":0.9,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141503208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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