Physics of the Solid State最新文献

{"title":"Non-Idealities in Tri-Gate FinFETs: Modeling, Simulation, and Mitigation Strategies","authors":"Suparna Panchanan,&nbsp;Reshmi Maity,&nbsp;Niladri Pratap Maity","doi":"10.1134/S1063783426600743","DOIUrl":"10.1134/S1063783426600743","url":null,"abstract":"<p>This work presents an extensive examination of undoped Tri-Gate Fin Field-Effect Transistors (TG-FinFET), focusing on their analytical modeling of surface potential, electric field and threshold voltage. This model is taking into account the consequence of localized interface charges, both positive and negative, that are carefully placed near the drain region. These charges are neglected in traditional modeling methodologies, are recognized to have a major influence on device electrostatics, especially at nanoscale levels where charge perturbations can markedly affect carrier transport and threshold properties. It is also examined how the drain-proximal interface charge (positive or negative) and high-<i>k</i> dielectric materials impact these parameters. Drawing insights from recent research, model the surface potential from two-dimensional Poisson’s equation. Combine solutions of the symmetric and asymmetric double gate FinFET to attain surface potential of the TG-FinFET. Concept of inversion charge is applied in direction of compute threshold voltage. The design is analyzed under varying interface charge densities and damage lengths on the silicon substrate. All parameters for both HfO₂ and SiO₂ are associated with the TCAD simulation. Accuracy of the approach is established by aligning its predictions through recognized experimental findings.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 9","pages":"774 - 788"},"PeriodicalIF":2.4,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148719077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Optical, and Photoconductive Properties of Slurry-Coated Cu0.2Zn0.8S Film","authors":"Vipin Kumar,&nbsp;Akansha Agrwal,&nbsp;Parvin Kumar,&nbsp;N. P. Yadav,&nbsp;Monika Gupta,&nbsp;Pradeep Kumar,&nbsp;R. A. Zargar,&nbsp;D. K. Dwivedi","doi":"10.1134/S1063783426600330","DOIUrl":"10.1134/S1063783426600330","url":null,"abstract":"<p>In this study, a slurry-coating procedure was successfully employed to deposit a Cu_0.2Zn_0.8S film on glass substrates. X-ray diffraction (XRD) and Raman spectroscopy analyses confirmed the formation of a polycrystalline, phase-pure cubic structure. Scanning electron microscopy (SEM) revealed a continuous surface coverage with uniform grain agglomeration alongside the presence of thermal-stress-induced micro-cracks. From the diffuse reflectance spectrum, an optical absorption edge was observed at approximately 331 nm, corresponding to a direct optical band gap of 3.75 eV. To evaluate the material’s suitability for optoelectronic components, electrical conductivity measurements were performed using a two-probe technique under both dark and constant illumination conditions over a temperature range of 300–473 K. The film exhibited a clear semiconducting nature governed by thermal activation, displaying a steady-state photosensitivity ratio (σ_ph/σ_d) of approximately 9.0. These findings demonstrate that the slurry-coated Cu_0.2Zn_0.8S film combines structural purity with favorable optoelectronic properties, highlighting its strong intrinsic photo-response and its potential utility as a baseline material for future photoconductive and optoelectronic applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 9","pages":"789 - 794"},"PeriodicalIF":2.4,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148719124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical Properties of Ba0.85Ca0.15Zr0.1Ti0.9O3 Ceramics Doped by Bi(Zn0.5Zr0.5)O3","authors":"S. L. Chi,&nbsp;D. H. Shao,&nbsp;S. Y. Chen,&nbsp;B. H. Zhang,&nbsp;F. Y. Guo,&nbsp;H. C. Lian,&nbsp;Z. Y. Yang,&nbsp;H. F. Bi,&nbsp;Y. Chen,&nbsp;Y. Zhang,&nbsp;D. W. Zhang,&nbsp;Y. C. Hu,&nbsp;X. W. Wang","doi":"10.1134/S1063783426600251","DOIUrl":"10.1134/S1063783426600251","url":null,"abstract":"<p>Researches on Ba_0.85Ca_0.15Zr_0.1Ti_0.9O₃ (BCZT) ceramics in terms of the energy storage applications have shown that their practical applications are limited by their low effective energy storage density (<i>W</i>_rec) and energy storage efficiency (η). To further enhance the effective energy storage density (<i>W</i>_rec) and energy storage efficiency (η) of BCZT ceramics, this work dopes BCZT ceramics with various proportions of Bi(Zn_0.5Zr_0.5)O₃(BZZ) ((1 – <i>x</i>)BCZT–<i>x</i>BZZ). Dense surface microstructure and small grain size of 3.11 μm are realized for <i>x</i> = 10%. Under breakdown electric field strength (<i>E</i>_<i>b</i>) of 100 kV/cm, <i>x</i> = 10% achieve <i>W</i>_rec of 0.80 J/cm³ and η of 84.3%. The ferroelectric performance is enhanced by appropriate BZZ doping amount, which densifies the system, refines grain size and facilitates the system’s relaxor behavior. The enhancement in ferroelectric property is beneficial to the realization of miniaturization for the application of ceramic capacitors.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"690 - 700"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Quantum Well Shape on the Efficiency of InGaN-Based Multiple-Quantum-Well Red LEDs","authors":"V. P. Sirkeli,&nbsp;S. I. Caragacian,&nbsp;Iu. B. Boris,&nbsp;D. L. Nika","doi":"10.1134/S1063783426602067","DOIUrl":"10.1134/S1063783426602067","url":null,"abstract":"<p>InGaN-based red light-emitting diodes (LEDs) face significant challenges due to the quantum-confined Stark effect and efficiency droop. This work numerically investigates five InGaN-based red LED structures (A–E) with different quantum well designs, including rectangular, stepped, and composition-graded profiles. Structure A (rectangular QW) exhibits a peak internal quantum efficiency of 0.534 and severe efficiency droop of 12.4% at 100 A/cm². Structure D (graded QW with 2 nm cap) shows the lowest turn-on voltage of 5.15 V but shifts into the amber spectral range (607–615 nm). Structure E (graded QW with a 1 nm In_0.45Ga_0.55N insertion layer) achieves the best overall performance: a peak internal quantum efficiency of 0.656, the lowest efficiency droop of 3.5%, and a wall-plug efficiency of 10.1% at 100 A/cm². Its electroluminescence peak maintains true red emission, shifting from 636 to 622 nm as current density increases from 10 to 100 A/cm². The optimized thin graded QW design in Structure E minimizes polarization fields and enhances carrier confinement, offering a nearly four-fold reduction in efficiency droop compared to the rectangular QW. These results provide a clear design guideline for high-efficiency, spectrally stable red InGaN LEDs.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"681 - 689"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ab-Initio Investigation of the Structural, Electronic, Mechanical, and Optical Properties of KZnX3 (X = Cl, Br) Perovskites, Using TB-mBJ","authors":"H. Bouheraoua,&nbsp;E. Belbacha","doi":"10.1134/S1063783426600172","DOIUrl":"10.1134/S1063783426600172","url":null,"abstract":"<p>The structural, mechanical, and optoelectronic properties of cubic halide perovskites KZnX₃ (X = Cl, Br) were investigated using density functional theory (DFT) within the full-potential linearized augmented plane wave (FP-LAPW) method, as implemented in the WIEN2k software. The optoelectronic properties were further examined using the Tran–Blaha modified Becke–Johnson (TB-mBJ) potential. The results indicate that both compounds are structurally stable within the generalized gradient approximation of the Perdew–Burke–Ernzerhof (PBE-GGA). KZnCl₃ exhibits insulating behavior with an indirect band gap of 4.06 eV, whereas KZnBr₃ exhibits semiconducting characteristics with an indirect band gap of 2.23 eV. The calculated elastic constants and formation energies confirmed that both compounds were mechanically and thermodynamically stable. Furthermore, the optical properties were analyzed in the photon energy range of 0–30 eV. Both compounds exhibit strong absorption in the ultraviolet region, indicating their potential for optoelectronic applications, particularly in ultraviolet (UV) devices.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"727 - 739"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Analysis of Tolerance Factors for Sr2+ Modified BiFeO3–PbTiO3 Ceramics","authors":"Nupur Aggarwal,&nbsp;Naveen Kumar","doi":"10.1134/S1063783426600779","DOIUrl":"10.1134/S1063783426600779","url":null,"abstract":"<p>Multiferroic (1 – <i>x</i>)BiFeO₃–<i>x</i>PbTiO₃ binary ceramics series exhibit interesting features such as tetragonality <i>c</i>/<i>a</i>, polarization, and high Curie temperature. The composition with <i>x</i> = 0.3 possesses a morphotropic phase boundary (a boundary separating rhombohedral and tetragonal phases). This is a very fascinating character of this composition as it exhibits two ferroic orderings which result in the enhancement of the ferroelectric properties of the system. The structural information related to this system is very crucial to predict the ferroelectricity in this compositional series. Goldschmidt’s tolerance factor is one of the important aspects to determine the stability of the perovskite (ABO₃ type crystal) structure. In the present case, polycrystalline 0.7BiFeO₃–0.3Pb_1–<i>x</i>Sr_<i>x</i>TiO₃ compositions with <i>x</i> = 0, 0.2, 0.4, 0.6, 0.8, and 1.0, were selected to determine the effect of Sr²⁺ substitution at the Pb-site in the composition, and the comparative correlation studies were conducted for ferroelectric ordering in the system.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"670 - 673"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Effect of Growth Time and Annealing on the Properties of Titanium Dioxide (TiO2)","authors":"Payal Paul,&nbsp;Saikat Chattopadhyay,&nbsp;Manas Kumar Mondal,&nbsp;Joydeep Biswas,&nbsp;Sanjib Kabi","doi":"10.1134/S1063783425602280","DOIUrl":"10.1134/S1063783425602280","url":null,"abstract":"<p>This work explores the influence of synthesis time and annealing temperature on the physiological and morphological properties of titanium dioxide (TiO₂) nanoparticles. TiO₂ nanoparticles were synthesized through a sol–gel method and subjected to varying synthesis durations and annealing temperatures to evaluate their impact on nanoparticle characteristics. Detailed analysis was performed using X-ray diffraction (XRD) to assess crystallinity, and field emission scanning electron microscopy (FESEM) was employed to evaluate particle morphology. Results demonstrated that extended synthesis times led to enhanced crystallite growth, while higher annealing temperatures significantly influenced the transformation of crystallite phase from anatase to rutile, thus altering the nanoparticle morphology. Furthermore, the physical properties were highly dependent on the annealing conditions, with a direct correlation to the degree of crystallization and particle size distribution. Cyclic Voltammetry was carried out in dark and illuminated conditions to study the photoelectrical properties of the materials. This work emphasises the critical role of fabrication and thermal treatment parameters in tailoring the properties of TiO₂ nanoparticles for specific applications in catalysis, photovoltaics, and biomedical fields.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"701 - 712"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Entropy Analysis of Thermal Radiation of Ferromagnetic Alloys of the Cobalt–Nickel System","authors":"D. V. Kosenkov,&nbsp;V. V. Sagadeev","doi":"10.1134/S1063783426600846","DOIUrl":"10.1134/S1063783426600846","url":null,"abstract":"<p>The emissivity of Co–Ni alloys is described based on entropy analysis. The heat flux is normalized by the Curie temperature. It is shown that in dimensionless coordinates, the data array is well approximated by power functions. The concentration diagram is divided into two branches (high-cobalt and high-nickel), which correlates with the density of electronic states at the Fermi level. The proposed dependence can be used to estimate the radiative properties of alloys over the entire range of concentrations and temperatures of the solid-phase state of the system.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"665 - 669"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"B-Site Engineering in Terbium-Based Perovskites: Unveiling TbRuO3 and TbOsO3 for High-Performance Optoelectronics—A DFT Study","authors":"Mushahid Hussain Shah,&nbsp;RM Arif Khalil,&nbsp;Malik Salman Tariq,&nbsp;Moussab Harb","doi":"10.1134/S1063783426600949","DOIUrl":"10.1134/S1063783426600949","url":null,"abstract":"<p>B-site cation replacement is a potent approach to modulate the characteristics of perovskite oxides to promote the advanced optoelectronic applications. We use the first-principles density functional theory (DFT) to explore the structural, electronic, optical, magnetic and mechanical properties of cubic terbium-based perovskites TbXO₃ (X = Ru, Os), and compare the effect of Ru, and Os directly as the B-site, in the system. The thermodynamic stability of the two compounds is confirmed by negative formation energies. Electronic structure analysis indicates a metallic nature with large electrical conductivity and optical property analysis indicates high absorption values with also significant transparency at certain wavelengths-which is a characteristic feature of high performance transparent conductors. Ferromagnetic ordering is further confirmed by spin-polarized density of states, and this implies that it can be used in many different ways. TbRuO₃ and TbOsO₃ are both ductile and robust as measured by mechanical tests. Together, the combination of metallic conductivity, moderate optical transparency, magnetic, and mechanical resilience makes B-site-engineered TbXO₃ perovskites strong candidates in the next-generation optoelectronic and photovoltaic devices.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"713 - 726"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoconductivity and Thermal Expansion of (TlInS2)1–x(TlGdS2)x Solid Solutions","authors":"C. C. Bayramov,&nbsp;K. M. Huseynova,&nbsp;S. R. Sadigova,&nbsp;R. Y. Damirov,&nbsp;U. M. Mustafayeva","doi":"10.1134/S1063783425604163","DOIUrl":"10.1134/S1063783425604163","url":null,"abstract":"<p>Based on previously established concepts regarding chemical bonding in the crystal lattice of the semiconductor compound <span>({text{TlIn}}{{{text{S}}}_{2}})</span> and its solid solutions, an analysis of their thermal expansion and photoconductivity has been carried out. The thermal expansion and photoconductive properties of <span>({text{TlIn}}{{{text{S}}}_{2}})</span> and Bridgman-grown solid solutions <span>({{left( {{text{TlIn}}{{{text{S}}}_{2}}} right)}_{{1 - x}}}{{left( {{text{TlGd}}{{{text{S}}}_{2}}} right)}_{x}})</span> are experimentally investigated. The chemical composition and structural characteristics of the obtained crystals are determined. From the experimental thermal expansion data <span>(left( {{{alpha }_{L}}} right))</span>), the Debye temperatures <span>(left( theta right))</span>, anharmonicity parameters <span>(left( gamma right))</span> and root-mean-square dynamic atomic displacements <span>(left( {sqrt {{{{bar {u}}}^{2}}} } right))</span> in the crystal lattice of the <span>({{left( {{text{TlIn}}{{{text{S}}}_{{text{2}}}}} right)}_{{1 - x}}}{{left( {{text{TlGd}}{{{text{S}}}_{2}}} right)}_{x}})</span> (0 &lt; <i>x</i> ≤ 0.10) system are calculated. It is found that with increasing <span>({text{TlGd}}{{{text{S}}}_{2}})</span> concentration in <span>({text{TlIn}}{{{text{S}}}_{{text{2}}}})</span> within the composition range <span>({{left( {{text{TlIn}}{{{text{S}}}_{2}}} right)}_{{1 - x}}}{{left( {{text{TlGd}}{{{text{S}}}_{2}}} right)}_{x}})</span> (0 ≤ <i>x</i> ≤ 0.06), the value of <span>(sqrt {{{{bar {u}}}^{2}}} ~)</span> increases, while <span>({{theta }_{{text{D}}}})</span> decreases. This behavior indicates a significant weakening of chemical bonding due to the substitution of indium atoms with gadolinium atoms in the solid solutions, resulting in an enhanced degree of anharmonicity of thermal vibrations. For all investigated compositions, the spectral distribution of photocurrent measured at 300 K shows an impurity-related absorption region. The long-wavelength edge of the impurity region in the photoconductivity spectra shifts further into the infrared region with increasing <span>({text{TlGd}}{{{text{S}}}_{2}})</span> content. Based on the photoconductivity data, the temperature dependence of the bandgap energy <span>({{E}_{g}}left( T right))</span> is determined and theoretically fitted. A good agreement is obtained between the calculated and experimental results.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 8","pages":"674 - 680"},"PeriodicalIF":2.4,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}