Physics of the Solid State最新文献_第10页

Dielectric Diffusive and Relaxor Behaviour of SrO Substituted BCZT Ceramics SrO取代BCZT陶瓷的介电扩散和弛豫行为

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-27 DOI: 10.1134/S1063783424602054

Srimannarayana Kola, K. V. Ramesh, D. Venkatesh, G. V. Swamy, T. Durga Rao, Md Haleema

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Sol–Gel Synthesis and Antibacterial Effects of a Nano-Enhanced Cd Doped ZnO Nanorod Conjugate 纳米增强Cd掺杂ZnO纳米棒共轭物的溶胶-凝胶合成及其抑菌效果

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-27 DOI: 10.1134/S1063783424601401

N. Sheen Kumar, S. R. Gibin, Kumar Govindhasamy, A. Mariappan, A. Muthuvel, Rafa Almeer

{"title":"Sol–Gel Synthesis and Antibacterial Effects of a Nano-Enhanced Cd Doped ZnO Nanorod Conjugate","authors":"N. Sheen Kumar, S. R. Gibin, Kumar Govindhasamy, A. Mariappan, A. Muthuvel, Rafa Almeer","doi":"10.1134/S1063783424601401","DOIUrl":"10.1134/S1063783424601401","url":null,"abstract":"In this work, ZnO and Cd doped ZnO nanorods (NRs) were synthesized using a hydrazine-assisted sol–gel method, followed by two annealing at temperatures (300 and 500°C). X-ray diffraction (XRD) analysis confirmed that the samples possess a hexagonal wurtzite crystalline structure. Transmission electron microscopy (TEM) revealed that the Cd doped ZnO nanoparticles are rod-shaped. X-ray photoelectron spectroscopy (XPS) indicated that Cd2+ ions successfully substituted into the Zn lattice. Photoluminescence (PL) analysis showed intense UV-region luminescence at 500°C due to Zn and oxygen vacancies and defects. These results suggest that Cd doped ZnO NRs annealed at 500°C could be promising candidates for next generation UV detectors. Furthermore, the antibacterial tests demonstrated that Cd2+ incorporation significantly enhanced that antibacterial effects of ZnO NRs, particularly against S. aureus (15 ± 0.85 mm) and E. coil (14 ± 0.71 mm) under light exposure. Thus, Cd-doped ZnO NRs offer great potential as an alternative antibacterial materials, especially in biomedical applications.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 2","pages":"111 - 119"},"PeriodicalIF":0.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Dependence of Raman Spectra of Complexes of Polyvinyl Alcohol with CdS and I2 on the Polarization of Exciting Radiation and Temperature 聚乙烯醇与CdS和I2配合物的拉曼光谱与激发辐射极化和温度的关系

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-27 DOI: 10.1134/S1063783424602042

I. Yu. Prosanov, A. A. Sidel’nikov, V. A. Volodin

引用次数: 0

Impact of Copper Substitution on the Structural Refinement, Magnetic Behaviour, and Dielectric Response of Ni–Zn Spinel Ferrites 铜取代对Ni-Zn尖晶石铁氧体结构细化、磁性和介电响应的影响

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-27 DOI: 10.1134/S1063783424602078

Arti A. Ingle, Akash V. Fulari, Rameshwar B. Borade, S.B. Kadam, V. D. Mote, A. B. Kadam, Sagar E. Shirsath, R. H. Kadam

{"title":"Impact of Copper Substitution on the Structural Refinement, Magnetic Behaviour, and Dielectric Response of Ni–Zn Spinel Ferrites","authors":"Arti A. Ingle, Akash V. Fulari, Rameshwar B. Borade, S.B. Kadam, V. D. Mote, A. B. Kadam, Sagar E. Shirsath, R. H. Kadam","doi":"10.1134/S1063783424602078","DOIUrl":"10.1134/S1063783424602078","url":null,"abstract":"Ni0.5Zn0.5−xCuxFe2O4 (x = 0, 0.05, 0.1, 0.15, 0.2, 0.25) spinel ferrite nanoparticles were synthesized via the sol-gel auto-combustion method and sintered at 700°C for 5 h. Thermogravimetric and differential thermal analysis (TG-DTA) revealed the thermal decomposition behaviour. Single phase ferrite with Fd‑3m space group was confirmed by the Rietveld refinement of X-ray diffraction data. The distribution of cation among octahedral B and tetrahedral A-site was estimated by the computational method. With increasing copper substitution, the lattice parameter decreased while X-ray density increased. Crystallite sizes ranged from 22 to 24 nm, consistent with the Williamson–Hall method, and strain decreased. Fourier-transform infrared (FTIR) spectroscopy confirmed the spinel structure. High-resolution transmission electron microscopy (HR-TEM) and field emission scanning electron microscopy (FE-SEM) showed grain sizes between 70 and 130 nm. Energy dispersive X-ray (EDAX) analysis confirmed chemical purity. Magnetic studies showed an increase in saturation magnetization and coercivity (42 to 57 Oe) with copper substitution, while dielectric behaviour followed the Maxwell–Wagner model.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 2","pages":"148 - 163"},"PeriodicalIF":0.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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The Impact of Electric and Magnetic Fields on the Quantum Capacitance of Monolayer Germanene 电场和磁场对单层锗烯量子电容的影响

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-27 DOI: 10.1134/S1063783424601978

Do Muoi

{"title":"The Impact of Electric and Magnetic Fields on the Quantum Capacitance of Monolayer Germanene","authors":"Do Muoi","doi":"10.1134/S1063783424601978","DOIUrl":"10.1134/S1063783424601978","url":null,"abstract":"In this work, we present the theory of quantum capacitance in two-dimensional buckled germanene. Germanene is a material with a natural bandgap and strong spin–orbit interaction, offering significant advantages over graphene. The results of this study reveal the behavior of the quantum capacitance in response to variations in the spin–orbit interaction and electric field. The capacitance in each valley can be adjusted with the electric field, shifting from a minimum to a maximum as the external gate voltage is applied. The total capacitance, derived from both the K and K ′ valleys, shows a tunable band gap at ({{E}_{{text{F}}}} = 0). When the electric field energy ({{Delta }_{z}} = 2{{{{lambda }}}_{{{text{so}}}}}), the capacitance is zero at ({{E}_{{text{F}}}} = 0), whereas the electric field energy ({{Delta }_{z}} = {{{{lambda }}}_{{{text{so}}}}}), the capacitance reaches maximum with a single peak at ({{E}_{{text{F}}}} = 0) and electron–hole symmetric spectrum. As the electric field affects the band structure, the spin-up states retain their energy gap, whereas the spin-down states converge. Shubnikov–de Haas oscillations in quantum capacitance are also observed, showing a be-ating pattern at low magnetic fields that disappears as the electric field dominates. At higher magnetic fields, the splitting of the oscillations becomes evident. The disappearance of beating pattern and subsequent oscillation splitting are attributed to the interplay between the spin–orbit interaction, electric field, and magnetic field.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 2","pages":"85 - 90"},"PeriodicalIF":0.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of Swift Heavy Ion Irradiation on Nano Zinc Silicate Decomposition at the ZnO–Si Junction 快速重离子辐照对ZnO-Si结处纳米硅酸锌分解的影响

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-14 DOI: 10.1134/S1063783424601759

Sanjeev Kumar, Amit Jain, Manohar Singh

引用次数: 0

Exploring Electronic Transport Properties of Vanadium-Doped Barium Calcium Titanate Ceramics 掺钒钛酸钡钙陶瓷的电子输运性质研究

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-14 DOI: 10.1134/S1063783424601851

Lalita Gautam, Preeti Redhu, Sonia Ahlawat, Suman Pawaria, Preeti Sharma

{"title":"Exploring Electronic Transport Properties of Vanadium-Doped Barium Calcium Titanate Ceramics","authors":"Lalita Gautam, Preeti Redhu, Sonia Ahlawat, Suman Pawaria, Preeti Sharma","doi":"10.1134/S1063783424601851","DOIUrl":"10.1134/S1063783424601851","url":null,"abstract":"This paper explores the effect of vanadium doping on electric modulus, impedance, and AC conductivity over a frequency range of 100 Hz to 1 MHz and a temperature span of 573 to 753 K in barium calcium titanate (BCT) ceramics synthesized via solid-state reaction process. The frequency-dependent AC conductivity obeys Almond–West law. Various parameters such as σdc, ωH, and s have been obtained from the theoretical fitting of σ'(ω) according to Almond–West law. An analysis of the frequency exponent s indicates that the conduction mechanism in the investigated samples follows Correlated Barrier Hopping Model. The activation energy values for DC conduction range from 0.71 to 0.80 eV. The relaxation time and activation energies of the studied ceramics extracted from fitting the imaginary part of the modulus were found to be between 2.98 and 664 µs and 0.917 to 1.024 eV, respectively. Nyquist plots fitted well using a series combination of two R-CPE equivalent circuits, indicating that the relaxation process is of a non-Debye type, influenced by both grain and grain boundaries. The resistances of the grains and grain boundaries found to decrease with increasing temperature, indicating that the ceramic samples exhibit semiconducting properties. These studies suggest the applications of prepared ceramic compositions for high sensitivity sensors, capacitors used in automotive, and power electronics operating under high thermal stress, actuators, solid oxide fuel cells (SOFCs).","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"75 - 84"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computational Investigation of Thermodynamic and Mechanical Properties of B2-type CoTi Intermetallic Compound b2型CoTi金属间化合物热力学和力学性能的计算研究

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-14 DOI: 10.1134/S1063783424601760

N. Bioud, N. Benchiheub, A. Benamrani, M. A. Ghebouli, M. Fatmi, Faisal Katib Alanazi

{"title":"Computational Investigation of Thermodynamic and Mechanical Properties of B2-type CoTi Intermetallic Compound","authors":"N. Bioud, N. Benchiheub, A. Benamrani, M. A. Ghebouli, M. Fatmi, Faisal Katib Alanazi","doi":"10.1134/S1063783424601760","DOIUrl":"10.1134/S1063783424601760","url":null,"abstract":"This work investigates the mechanical properties of B2-type CoTi material, using the density functional theory within the pseudopotential method and a plane waves basis set as implemented in the Quantum Espresso code. Our calculation yielded values of Debye temperature θD = 414.6 K and elastic constants C11 = 226.50 GPa, C12 = 129.55 GPa, and C44 = 226.50 GPa, respectively. To test the incertitude of calculated elastic constants Cij for B2-type CoTi intermetallic compound, we compared our obtained results with the experimental values of the literature. Our findings show a good agreement with experimental data. Furthermore, using an approximation based on the quasi-harmonic model, we explore various thermodynamic properties of the B2-type CoTi intermetallic compound. The thermodynamic properties obtained in this study reveal that the free energy decreases gradually with the augmentation of the temperature, while both the heat capacity as well as the entropy increase with the raising of the temperature. At T = 298 K, our calculation yielded values of entropy S = 68.35 J mol–1 K–1 and heat capacity CV = 46.61 J mol–1 K–1, respectively. To the authors’ knowledge, no previous study has reported theoretical data on the thermodynamic properties for CoTi material.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"68 - 74"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gadolinium-Doped Nickel Ferrite (NiFe2O4) Nanoparticles: Structural, Optical, and Magnetic Characterization 掺钆镍铁氧体（NiFe2O4）纳米颗粒：结构、光学和磁性表征

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-14 DOI: 10.1134/S1063783424601152

Poornima B Shetty, K. I. Maddani, Meera R. Gumaste

引用次数: 0

Temperature-Dependent Raman Spectroscopy Analysis of Epitaxially Grown Ge0.91Sn0.09 on GaAs (001) Substrate GaAs（001）衬底外延生长Ge0.91Sn0.09的温度相关拉曼光谱分析

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2025-02-14 DOI: 10.1134/S1063783424601887

Dushyant Singh, Chandan Bhai Patel, Samir Ranjan Sahoo, Ranjan K. Singh, Rahul Kumar, Krista R. Khiangte

{"title":"Temperature-Dependent Raman Spectroscopy Analysis of Epitaxially Grown Ge0.91Sn0.09 on GaAs (001) Substrate","authors":"Dushyant Singh, Chandan Bhai Patel, Samir Ranjan Sahoo, Ranjan K. Singh, Rahul Kumar, Krista R. Khiangte","doi":"10.1134/S1063783424601887","DOIUrl":"10.1134/S1063783424601887","url":null,"abstract":"We report on the epitaxial growth of Ge0.91Sn0.09 alloy epilayers on a GaAs (001) substrate by low-temperature molecular beam epitaxy. Temperature-dependent Raman measurements were used to investigate the behavior and stability of Sn in Ge1–xSnx grown on GaAs by examining the behavior of the longitudinal optical phonon modes originating from both the Ge1–xSnx epilayers and the GaAs substrate. The Raman data reveals improved crystalline quality and increased Sn content in the Ge1–xSnx epilayer as the temperature is increased from 100 to 580 K. However, at a temperature of about T = 620 K, the mobility and segregation of Sn in the Ge1–xSnx epilayers dramatically increases. This behavior is similar to reports of Sn mobility and potential segregation from Ge1–xSnx grown on both Ge and Si substrates, despite differences in atom chemistry between Ge1–xSnx and the different substrates. Likely, the transition temperature for which Sn becomes mobile in Ge1–xSnx is dominated by its dependence on the bonding between Ge and Sn and level of strain in the Ge matrix.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"39 - 47"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0