Physics of the Solid State最新文献_第9页

Structural and Solid-State Properties of a Hydrogen-Bonded Pentanedioic Acid–Thiourea Co-Crystal 氢键戊二酸-硫脲共晶的结构和固态性质

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603868

Helen Merina Albert, SK. Fakruddin Babavali, Archana Asatkar, R. Priya, N. R. Rajagopalan, V. Nagalakshmi, Nellore Manoj Kumar, V. Balachandar

{"title":"Structural and Solid-State Properties of a Hydrogen-Bonded Pentanedioic Acid–Thiourea Co-Crystal","authors":"Helen Merina Albert, SK. Fakruddin Babavali, Archana Asatkar, R. Priya, N. R. Rajagopalan, V. Nagalakshmi, Nellore Manoj Kumar, V. Balachandar","doi":"10.1134/S1063783425603868","DOIUrl":"10.1134/S1063783425603868","url":null,"abstract":"Pentanedioic acid-thiourea (PAT), a new hydrogen-bonded organic co-crystal, was produced using a slow evaporation method and examined for its structural and solid-state properties. Single-crystal X‑ray diffraction confirmed an orthorhombic Pnma structure, stabilized by N–H···O and O–H···S hydrogen-bonding frameworks. The FTIR spectrum validated the functional groups and successful co-crystallization. Optical absorption analysis revealed a strong UV band at 232 nm, a sharp cutoff at 298 nm, and a wide bandgap of 4.165 eV, showing UV-filtering and semiconducting properties. The low Urbach energy (0.085 eV) indicated that the material was well-crystallized and had fewer defects. Dielectric tests revealed temperature and frequency-dependent behavior, with AC conductivity following a thermally activated hopping process. Thermal investigation revealed a multi-stage decomposition process, with stability up to 126°C. Thus, the remarkable solid-state properties of PAT co-crystal make it a suitable material for optoelectronic and UV-filtering uses.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"300 - 310"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications 射频电源应用中p-GaN栅极Al0.23Ga0.77N/GaN hemt与Al0.05Ga0.95和In0.1Ga0.9N背障的比较设计

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603819

P. Gowtham, G. Vetrichelvi, K. Balaji, S. Karthikeyan

{"title":"Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications","authors":"P. Gowtham, G. Vetrichelvi, K. Balaji, S. Karthikeyan","doi":"10.1134/S1063783425603819","DOIUrl":"10.1134/S1063783425603819","url":null,"abstract":"This study systematically investigates the static and dynamic behaviors of p-GaN-gate high electron mobility transistors (HEMTs) incorporating two distinct back barrier compositions: the conventional Al0.05Ga0.95N and a In0.1Ga0.9N layer. Both devices are designed with identical geometries, featuring a gate length of 1.2 μm. The InGaN back barrier HEMT consistently delivers superior output current (({{I}_{{text{D}}}})) and transconductance (({{g}_{m}})) compared to its AlGaN counterpart, reaching peak values of approximately 0.82 A/mm and 0.50 mS/mm, respectively. In contrast, the AlGaN backbarrier exhibits lower maxima, with ({{I}_{{text{D}}}}) of 0.60 A/mm and ({{g}_{m}}) near 0.40 mS/mm. The InGaN-structured device also surpasses AlGaN in RF performance, achieving a maximum unity current gain cutoff frequency (({{f}_{T}})) of about 75 GHz, versus 61 GHz for AlGaN. This heightened ({{f}_{T}}) stems from improved channel carrier transport and reduced gate-drain capacitance (({{C}_{{{text{GD}}}}})), with InGaN backbarrier showing a lower ({{C}_{{{text{GD}}}}}) (0.8 × 10–13 F/mm) compared to AlGaN (1.3 × 10–13 F/mm) in the high-bias regime, which is critical for fast switching and minimizing power losses. The InGaN back barrier HEMT demonstrates a higher gate-source capacitance (({{C}_{{{text{GS}}}}})) of about 1.0 × 10‒12 F/mm, which enables enhanced transconductance for efficient gate control. The InGaN back barrier HEMT sustains a substantial breakdown voltage of 436 V, underscoring its potential for high-power and high-frequency electronic applications, while the AlGaN back barrier offers an even higher breakdown of 543 V.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"271 - 282"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Optical Properties of Colorless Polymer Coatings on the Mirrored Surface of Containers 容器镜面上无色聚合物涂层的光学性能

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603212

I. Enrique García Balderas, A. P. Kondratov, V. Yu. Vereshchagin, A. Yu. Pogiba

{"title":"Optical Properties of Colorless Polymer Coatings on the Mirrored Surface of Containers","authors":"I. Enrique García Balderas, A. P. Kondratov, V. Yu. Vereshchagin, A. Yu. Pogiba","doi":"10.1134/S1063783425603212","DOIUrl":"10.1134/S1063783425603212","url":null,"abstract":"The optical characteristics of light-reflecting surfaces, birefringence, and pleochroism effects in multilayer coatings of metal, glass, and plastic packaging made from biaxially oriented isotactic polypropylene (BOPP) were investigated. Birefringence induces bright coloration in transparent, colorless BOPP films under polarized light, leading to the manifestation of pleochroism. Polarized light arises from the reflection of natural or artificial illumination on mirrored surfaces, with the proportion of polarized radiation in the reflected light flux depending on the angle of incidence and the properties of the dielectric mirror surface. The study proposes utilizing the color effects observed in polymer films to enhance the visual appeal of packaging and to provide protective marking. The protection of product packaging against counterfeiting represents a significant social and economic challenge in modern society. Protective marking, when combined with information encoding, ensures consumer safety—particularly for pharmaceuticals and corrosive household chemicals. The reliable encoding and recognition of hidden security information on transparent polymer packaging depend on the contrast and color differentiation of structural elements, such as barcodes or trademarks, which become visible only under polarized light. This article presents the results of instrumental measurements and quantitative assessments of colored radiation reflected from colorless mirrored surfaces of metal, glass, and polymer containers. The optimal number of transparent polymer film layers required to achieve vivid coloration of labels or packaging visible in polarized light, as well as the contrast necessary for effective protective marking, has been determined.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"283 - 289"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Performance Investigation of an L-Shaped Tunneling Gate TFET Photodetector for Near-Infrared Detection 用于近红外探测的l形隧道栅TFET光电探测器的性能研究

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603765

Gali Madhavi, Chakradhar Adupa, Ramkumar Natarajan, Anil Kumar Pathakamuri, R. S. Venkatesan

{"title":"Performance Investigation of an L-Shaped Tunneling Gate TFET Photodetector for Near-Infrared Detection","authors":"Gali Madhavi, Chakradhar Adupa, Ramkumar Natarajan, Anil Kumar Pathakamuri, R. S. Venkatesan","doi":"10.1134/S1063783425603765","DOIUrl":"10.1134/S1063783425603765","url":null,"abstract":"This study introduces an innovative photodetector device that integrates an L-shaped top gate with a photosensitive back gate (LTG-PBG-TFET), specifically engineered to detect incident light within the near-infrared (NIR) wavelength range of 750–1050 nm. The LTG-PBG-TFET design leverages the advantages of both the L-shaped top gate and the photosensitive bottom gate to extend the edge tunneling zone at the channel/source (C/S) junction. This structural configuration enhances the photocurrent (Ilight) response, subthreshold swing (SSavg), and turn-ON voltage (Vth) under illumination. Furthermore, the slight elevation near the gate corner minimizes corner effects at the source/channel interface, which in turn improves Ilight/Idark performance as the illumination wavelength (λ) transitions from 1050 to 750 nm. Consequently, notable enhancements in Ilight, SSavg, and the Ilight/Idark ratio were observed, yielding a high spectral sensitivity (Sn) of approximately 54.4 and a signal-to-noise ratio (SNR) of about 82.2 for the proposed LTG-PBG-TFET device. Additionally, incorporating a light exposure window in the back gate region increases the active area for electron-hole pair (EHP) generation, thereby enhancing quantum efficiency (η) and responsivity (R), particularly at longer wavelengths around 1050 nm. Finally, the influence of acceptor–donor trap charges at the semiconductor/oxide interface on the Sn of the device was examined. Results indicate that Sn remains relatively stable as the wavelength (λ) is tuned between 750 and 1050 nm.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"260 - 270"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Structural, Morphological, Vibrational, and Optical Properties of Mg-Doped ZnO Nanoparticles Synthesized via Sol–Gel Method 溶胶-凝胶法制备镁掺杂ZnO纳米颗粒的结构、形态、振动和光学性质

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603303

Pujarani Parida, Virendra Kumar Verma

{"title":"Structural, Morphological, Vibrational, and Optical Properties of Mg-Doped ZnO Nanoparticles Synthesized via Sol–Gel Method","authors":"Pujarani Parida, Virendra Kumar Verma","doi":"10.1134/S1063783425603303","DOIUrl":"10.1134/S1063783425603303","url":null,"abstract":"Zn1–xMgxO (x = 0, 0.05, 0.1, and 0.15) nanoparticles (NPs) were prepared via the sol–gel method. A comprehensive investigation of the structural, morphological, vibrational, and optical characteristics of the prepared NPs was carried out by using the X-ray diffraction method (XRD), scanning electron microscopy (SEM), Fourier-transformed infrared spectroscopy (FTIR), and Ultraviolet-visible (UV–Vis) spectroscopy. XRD analysis confirmed the hexagonal wurtzite structure of ZnO. The average crystallite size decreased with increasing Mg concentration. Surface morphology was revealed by the SEM. FTIR spectra exhibited peaks below 700 cm–1 corresponding to the zinc oxide (ZnO) and doped ZnO NPs. The UV–Vis result shows a blue shift in the optical bandgap for all samples when the Mg concentration increases in the ZnO lattice. The Tauc equation and Urbach tail analysis were employed to determine the optical bandgap, assess interband transitions, and evaluate defect-related states. The increased bandgap and improved optical characteristics make Mg-doped ZnO NPs promising candidates for optoelectronic devices, particularly in UV detectors and photovoltaic applications.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"211 - 221"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Retraction Note: Structural Position and Charge State of Nickel in SrTiO3 附注：镍在SrTiO3中的结构位置和电荷状态

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-02-19 DOI: 10.1134/S1063783426030017

I. A. Sluchinskaya, A. I. Lebedev, A. Erko

引用次数: 0

Performance Trade-Offs and Optimization of Single and Dual-Layer Passivation AlGaN/GaN HEMTs with Double-Deck Gate Field Plate 双层栅场极板单、双层钝化AlGaN/GaN hemt的性能权衡与优化

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-02-16 DOI: 10.1134/S1063783425603340

Pichingla Kharei, Achinta Baidya, Niladri Pratap Maity

{"title":"Performance Trade-Offs and Optimization of Single and Dual-Layer Passivation AlGaN/GaN HEMTs with Double-Deck Gate Field Plate","authors":"Pichingla Kharei, Achinta Baidya, Niladri Pratap Maity","doi":"10.1134/S1063783425603340","DOIUrl":"10.1134/S1063783425603340","url":null,"abstract":"This study presents a comprehensive evaluation of AlGaN/GaN-based high electron mobility transistors (HEMTs) with various passivation schemes, providing critical insights for device optimization. HfO2-passivated devices exhibit superior breakdown characteristics, achieving a remarkable breakdown voltage (Vbr) of 788 V, which confirms the advantage of high-k dielectrics in enhancing voltage withstand capability. In contrast, SiO2-passivated HEMTs exhibit optimal radio frequency (RF) performance, including the highest cut-off frequency ( fT), which is attributed to their lower parasitic capacitance, making them ideal for high-frequency applications. This reflects a fundamental trade-off between breakdown strength and frequency response in HEMT devices. To overcome this limitation, a dual-passivation approach is investigated. Type-A exhibits superior DC performance, with higher drain saturation current (Idss), transconductance (gm), and Vbr, owing to the stronger gate control and electric field modulation provided by the high-k HfO2 top layer. Both dual-layer passivation schemes significantly enhance Vbr (~798 V for Type-A, ~797 V for Type-B) compared to single-layer passivation. In RF analysis, Type-B (Si3N4 on top, HfO2 below) outperforms Type-A. Although Type-A exhibits higher fT up to 0.4 µm, thicker HfO2 increases parasitic capacitances, degrading GFP, TFP, and GTFP. In contrast, Type-B improves with thicker Si3N4, validating the advantage of placing a low-k on top of a high-k dielectric. Considering composite FOMs (TFP, GFP, GTFP, VEA, AV), Type-B achieves superior overall RF performance.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 2","pages":"134 - 146"},"PeriodicalIF":1.8,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147339266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Comparative Optical Response and Structural Properties of CdS in Zinc-Blende and Wurtzite Phases: A First-Principles Investigation CdS在锌-闪锌矿和纤锌矿相中的比较光学响应和结构性质：第一性原理研究

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-02-16 DOI: 10.1134/S1063783425602656

Abdelghani Khaldi, Mohamed Redha Khelladi, Nadir Bouarissa, Laurent Tabourot

引用次数: 0

Synthesis and Characterization of CH3NH3SnI3 and CH3NH3SnICl2 Tin-Based Halide Perovskite Films CH3NH3SnI3和CH3NH3SnICl2锡基卤化物钙钛矿薄膜的合成与表征

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-02-16 DOI: 10.1134/S1063783425602917

Maarif Jafarov, Sevinj Nuriyeva, Aynura Karimova, Mustafa Muradov, Lala Gahramanli, Habiba Shirinova, Flora Hajiyeva, S. Mammadova

{"title":"Synthesis and Characterization of CH3NH3SnI3 and CH3NH3SnICl2 Tin-Based Halide Perovskite Films","authors":"Maarif Jafarov, Sevinj Nuriyeva, Aynura Karimova, Mustafa Muradov, Lala Gahramanli, Habiba Shirinova, Flora Hajiyeva, S. Mammadova","doi":"10.1134/S1063783425602917","DOIUrl":"10.1134/S1063783425602917","url":null,"abstract":"In this study, hybrid tin-based perovskite films of CH3NH3SnI3 and CH3NH3SnICl2 were synthesized and systematically characterized to evaluate the influence of partial halide substitution. Atomic Force Microscopy (AFM) and Optical Microscopy (OM) revealed that chloride incorporation improves surface uniformity and increases grain size. X-ray diffraction (XRD) analysis showed that CH3NH3SnI3 contains the expected tetragonal perovskite phase together with minor secondary phases. Fourier Transform Infrared Spectroscopy (FTIR) confirmed characteristic CH3NH(_{3}^{ + }) vibrational modes with slight shifts resulting from lattice modification induced by halide substitution. UV–V is absorption measurements revealed tunable optical properties, with a band gap of 1.35 eV for CH3NH3SnI3 and 1.55 eV for CH3NH3SnICl2. Photoluminescence (PL) spectra showed stronger and narrower emission for CH3NH3SnICl2 (~820 nm) compared to CH3NH3SnI3 (~920 nm), indicating reduced trap-state density and improved radiative recombination. The novelty of this work lies in the direct comparative analysis of nanoscale CH3NH3SnI3 and mixed-halide CH3NH3SnICl2 films synthesized under identical conditions, demonstrating that partial I– → Cl– substitution significantly improves structural quality, optical performance, and stability. These findings identify CH3NH3SnICl2 as a promising lead-free candidate for next-generation optoelectronic and photovoltaic devices.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 2","pages":"154 - 163"},"PeriodicalIF":1.8,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147339339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Γ–X Band Crossover on Resonant Tunneling Properties in GaAs/Ga0.7Al0.3As with Dresselhaus Spin-Orbit Interaction Γ-X带交叉对Dresselhaus自旋轨道相互作用下GaAs/Ga0.7Al0.3As共振隧穿特性的影响

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-02-16 DOI: 10.1134/S1063783425600463

A. Meharajbegum, V. J. Priyadharshini, D. Gopinath, S. Rafi Ahamed, L. Bruno Chandrasekar, P. Shunmuga Sundaram, Sonaimuthu Mohandoss, M. Karunakaran, D. Shanmugapriya, J. Thirumalai

{"title":"Effect of Γ–X Band Crossover on Resonant Tunneling Properties in GaAs/Ga0.7Al0.3As with Dresselhaus Spin-Orbit Interaction","authors":"A. Meharajbegum, V. J. Priyadharshini, D. Gopinath, S. Rafi Ahamed, L. Bruno Chandrasekar, P. Shunmuga Sundaram, Sonaimuthu Mohandoss, M. Karunakaran, D. Shanmugapriya, J. Thirumalai","doi":"10.1134/S1063783425600463","DOIUrl":"10.1134/S1063783425600463","url":null,"abstract":"Our theoretical study focused on the spin-dependent electron transport characteristics in GaAs/Ga0.7Al0.3As resonant tunnel barriers. This system exhibits spin-splitting, which is a consequence of the Dresselhaus spin-orbit interaction. Calculation of the transmission coefficient and spin-polarization efficiency relies on the matrix method. The pressure influences the barrier transparency and degree of polarization. The maximum of 72% spin-polarization is achieved in this work at critical pressure. The role of the Γ–X band crossover is accounted for in this theory. The spin-polarization increases without the Γ–X band crossover and the same decreases with the Γ–X band crossover. At the critical pressure, the degree of spin polarization is high. Analysis of the electron dwell time reveals that spin-down electrons spend more time in the system than spin-up electrons. We also found that the dwell time reaches its maximum when the heterostructure is subjected to the critical pressure.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 2","pages":"147 - 153"},"PeriodicalIF":1.8,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147339267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0