Effect of InAlGaN Interlayers on the Efficiency of InGaN-Based Red Light-Emitting Diodes

IF 1.8 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Physics of the Solid State Pub Date : 2025-08-11 DOI:10.1134/S1063783425602188

V. P. Sirkeli, S. I. Caragacian, Iu. B. Boris, D. L. Nika

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Abstract

We report on a numerical study of the effect of InAlGaN interlayers on the efficiency of InGaN‑based red light-emitting diodes (LEDs). The introduction of interlayers in red LED structures was found to increase the turn-on voltage from approximately 2.64 V (without interlayer) to 2.68, 3.05, and 3.08 V for devices incorporating GaN, Al_0.20Ga_0.80N, and partially strain-relaxed In_0.08Al_0.35Ga_0.57N interlayers, respectively. Among the four LED configurations studied, the structure with an In_0.08Al_0.35Ga_0.57N interlayer exhibited the best performance, emitting at 632 nm with an internal quantum efficiency of 0.67, an external quantum efficiency of 33.5%, and a wall-plug efficiency of 21.2%. The partially strain-relaxed In_0.08Al_0.35Ga_0.57N interlayer effectively modifies the band structure by increasing electron and hole barrier heights, enhancing carrier confinement, and reducing polarization-induced fields. Furthermore, this device demonstrated superior stability of the electroluminescence peak wavelength under increasing bias voltage compared to the other structures.

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铟镓中间层对铟镓基红光发光二极管效率的影响

我们报道了一项关于InGaN中间层对基于InGaN的红色发光二极管（led）效率影响的数值研究。研究发现，在红色LED结构中引入中间层后，对于含有GaN、Al0.20Ga0.80N和部分应变松弛In0.08Al0.35Ga0.57N中间层的器件，导通电压分别从大约2.64 V（无中间层）提高到2.68、3.05和3.08 V。在所研究的四种LED结构中，具有In0.08Al0.35Ga0.57N中间层的结构表现出最好的性能，在632 nm处发光，内部量子效率为0.67，外部量子效率为33.5%，wall-plug效率为21.2%。部分应变松弛的In0.08Al0.35Ga0.57N中间层通过增加电子和空穴势垒高度、增强载流子约束和减少极化诱导场有效地改变了能带结构。此外，与其他结构相比，该器件在增加偏置电压下具有更好的电致发光峰值波长稳定性。

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来源期刊

Physics of the Solid State 物理-物理：凝聚态物理

CiteScore

1.70

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.