Physics of the Solid State最新文献_第3页

Glass Transition and Crystallization Kinetics of Ge17.5As15Se52.5S15 Chalcogenide Glass Ge17.5As15Se52.5S15硫系玻璃的玻璃化转变及结晶动力学

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-09-01 DOI: 10.1134/S1063783426601384

Samir Mammadov, Salima Mekhtiyeva, Rahim Alekberov, Lamiye Afendiyeva

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Cross-Relaxation Dynamics in a Neodymium Doped Chalcogenide Crystal 掺钕硫系化合物晶体的交叉弛豫动力学

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-09-01 DOI: 10.1134/S1063783426603115

S. G. Asadullayeva, T. G. Naghiyev

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On the Origin of the Positive Curie–Weiss Temperature in Ferrimagnetic GdTiO3 铁磁性GdTiO3居里-魏斯正温度的起源

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-09-01 DOI: 10.1134/S1063783426601645

Airat Kiiamov

{"title":"On the Origin of the Positive Curie–Weiss Temperature in Ferrimagnetic GdTiO3","authors":"Airat Kiiamov","doi":"10.1134/S1063783426601645","DOIUrl":"10.1134/S1063783426601645","url":null,"abstract":"Recent investigations into the magnetic properties of high-quality GdTiO3 single crystals have reported an isotropic ferrimagnetic ordering at TN ≈ 32 K, accompanied by a positive Curie–Weiss temperature (θCW ≈ 34–35 K) in the paramagnetic regime. The original study interpreted this positive θCW as arising from antiferromagnetic interactions between the Gd and Ti magnetic sublattices, together with ferromagnetic interactions within the individual sublattices. Here we reassess this interpretation within the Néel molecular-field theory for two-sublattice ferrimagnets. The analysis shows that an antiferromagnetic inter-sublattice coupling gives a negative contribution to the asymptotic Curie–Weiss temperature. Therefore, the observed positive θCW requires a dominant positive intra-sublattice contribution. Because the Curie constant of the Gd3+ sublattice is about 21 times larger than that of the Ti3+ sublattice, the high-temperature susceptibility is expected to be governed mainly by ferromagnetic Gd–Gd correlations, whereas the antiferromagnetic Gd‒Ti coupling determines the antiparallel locking of the two sublattices in the ferrimagnetic state.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 10","pages":"829 - 831"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Stability of Tripartite Entangled State in Spin Trimer Coupled to a Magnetic Ion 磁离子耦合自旋三聚体中三方纠缠态的稳定性

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-09-01 DOI: 10.1134/S1063783425602711

C.-I. Kim, C.-H. Jong, T.-S. So, C.-S. Yun, C.-J. Kang

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Interface Trap-Induced Variability and Thermal Reliability in Epitaxial Layer Heterojunction Vertical Tunnel FET 外延层异质结垂直隧道场效应管的界面阱诱导变异性和热可靠性

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-08-14 DOI: 10.1134/S1063783426601335

Swati Dixit, Varun Mishra, Manisha Pattanaik

{"title":"Interface Trap-Induced Variability and Thermal Reliability in Epitaxial Layer Heterojunction Vertical Tunnel FET","authors":"Swati Dixit, Varun Mishra, Manisha Pattanaik","doi":"10.1134/S1063783426601335","DOIUrl":"10.1134/S1063783426601335","url":null,"abstract":"This study presents an Epitaxial Layer Heterojunction Vertical Tunnel Field Effect Transistor (EL‑HJ-VTFET) employing Mg2Si as the source and a SiGe epitaxial layer to enhance band-to-band tunneling (BTBT) and overall device efficiency. The narrow bandgap of Mg2Si (0.6–0.7 eV) enables effective carrier injection, while the SiGe layer improves band alignment, reduces tunneling width, strengthens the electric field, and mitigates lattice mismatch defects, thereby increasing device reliability. The impact of interface trap charge (ITC) density (±1010 to ± 1012 cm–2) and temperature (250–400 K) is analyzed to analyze the reliability. Positive interface charge yields a high current ratio (ION/IOFF ≈ 2.10 × 109) but increases threshold voltage and degrades subthreshold swing. In contrast, negative interface charge achieves a steep subthreshold swing (~23.18 mV/dec), lower threshold voltage, and reduced leakage, albeit with a lower current ratio (~2.15 × 107). Benchmarking has been carried out with reported experimental devices in terms of electrical metrics. Therefore, the device shows strong potential for ultra-low-power VLSI and biosensing applications.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 9","pages":"795 - 805"},"PeriodicalIF":2.4,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148719121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Spin-Coated ZnO Thin Films: Optical Bandgap Analysis Based on Rotational Speed and Dislocation Density Modeling 旋转包覆ZnO薄膜：基于转速和位错密度模型的光学带隙分析

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-08-14 DOI: 10.1134/S1063783425603480

Abdelhakim Saadi, Abdallah Attaf, Mohamed Othmane, Hanane Saidi

{"title":"Spin-Coated ZnO Thin Films: Optical Bandgap Analysis Based on Rotational Speed and Dislocation Density Modeling","authors":"Abdelhakim Saadi, Abdallah Attaf, Mohamed Othmane, Hanane Saidi","doi":"10.1134/S1063783425603480","DOIUrl":"10.1134/S1063783425603480","url":null,"abstract":"Zinc oxide (ZnO) thin films were successfully synthesized on glass slide substrates via the sol–gel spin coating method using a zinc acetate-propanol-MEA precursor (Monoethanolamine). The impact of rotational speed on the structural and optical properties was systematically examined by varying the rotational speed between 350 and 950 rpm, followed by annealing at 500°C. X-ray diffraction (XRD) confirmed the wurtzite hexagonal phase and revealed clear variations in crystallite size, dislocation density, and lattice strain as a function of deposition speed. UV-Visible spectroscopy showed that the optical bandgap energy was strongly influenced by the film microstructure, with the best balance of high transparency and low defect density achieved at 800 rpm (Eg ≈ 3.229 eV). To provide predictive insight, two mathematical models were established: a quadratic function linking Eg to rotational speed and a logarithmic decay describing its relationship with dislocation density. Both models reproduced the experimental results with very small relative errors, ranging between 0.04–1.35% and 0.11–1.15%, respectively, confirming their robustness. The optimized ZnO thin film at 800 rpm exhibits properties well suited for ultraviolet photodetectors, where controlled defect density and tunable bandgap are essential. This dual-model approach provides a powerful framework for guiding the process-driven design of ZnO-based optoelectronic devices.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 9","pages":"806 - 820"},"PeriodicalIF":2.4,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148719119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electronic and Optical Properties of the TlIn3S5 Crystals: Ab Initio Calculation and Experiment TlIn3S5晶体的电子和光学性质：从头计算和实验

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-08-14 DOI: 10.1134/S1063783426601505

Z. A. Jahangirli, I. A. Mamedova, V. B. Aliyeva, S. I. Mammadova, S. S. Ragimov, T. G. Mammadov, N. A. Abdullayev, A. I. Najafov

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Crucial Role of Partial Fluorination in Modulation of Thermal Conductivity of Graphene Nanoribbon: Non-Equilibrium Molecular Dynamics Simulations 部分氟化在石墨烯纳米带热导率调制中的关键作用：非平衡分子动力学模拟

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-08-14 DOI: 10.1134/S1063783426601116

Yong-Chol Ju, Chol-Gun Choe, Nam-Chol Ri

{"title":"Crucial Role of Partial Fluorination in Modulation of Thermal Conductivity of Graphene Nanoribbon: Non-Equilibrium Molecular Dynamics Simulations","authors":"Yong-Chol Ju, Chol-Gun Choe, Nam-Chol Ri","doi":"10.1134/S1063783426601116","DOIUrl":"10.1134/S1063783426601116","url":null,"abstract":"Molecular dynamics simulations have been performed to investigate the modulation of the thermal conductivity of graphene nanoribbon as function of partial fluorographene nanoroad. Thermal conductivities of the hybrid systems keep stable value below 25 ps of simulation time. All hybrid graphene nanoribbons have remarkably decreased thermal conductivity than pure graphene nanoribbon. The thermal conductivity of hybrid system with armchair orientation decreases more dramatically than that of zigzag orientation. The thermal conductivity of the hybrid system decreases as width of fluorographene nanoroad increases. Especially, the thermal conductivity of the hybrid system formed by middle fluorographene nanoroad decreases more rapidly than that of edge fluorographene nanoroad. The results offer guide of graphene and fluorographene application based on their thermal properties. The decrease of the thermal conductivity in fluorographene nanoroad and the increase of the thermal conductivity in graphene nanoroad can be used to control the thermal properties of graphene nanoribbons.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 9","pages":"765 - 773"},"PeriodicalIF":2.4,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148719123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Regulation of ZnO Nanorod Arrays Performance by ZnS Shell Layer Using PLD Technique 基于PLD技术的ZnS壳层对ZnO纳米棒阵列性能的调控

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-08-14 DOI: 10.1134/S1063783426601001

Caifeng Wang, Fangjian Shang

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Plastic Deformation of a Carbon Nanotube Bundle under Transverse Loading 碳纳米管束在横向载荷下的塑性变形

IF 2.4 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-08-14 DOI: 10.1134/S1063783426601517

A. A. Ovcharov, O. V. Andrukhova, D. A. Durasova, V. A. Bryzgalov, A. Y. Morkina, A. M. Kazakov, S. V. Dmitriev

{"title":"Plastic Deformation of a Carbon Nanotube Bundle under Transverse Loading","authors":"A. A. Ovcharov, O. V. Andrukhova, D. A. Durasova, V. A. Bryzgalov, A. Y. Morkina, A. M. Kazakov, S. V. Dmitriev","doi":"10.1134/S1063783426601517","DOIUrl":"10.1134/S1063783426601517","url":null,"abstract":"There are numerous examples of crystalline media composed of particles whose shape and size can vary significantly under external loads. As an example of such a medium, this paper models the plastic deformation of a carbon nanotube (CNT) bundle under transverse compression in a two-dimensional setting, considering plane strain of its cross section. A pair of edge dislocations is introduced into the CNT bundle, and their interaction is analyzed as a function of the distance s between their parallel slip planes. Slip in one plane, when s = 0, leads to complete annihilation of the dislocations. If s is negative (positive) and small in absolute value, the interaction of dislocations leads to the formation of vacancies (interstitial CNTs). If | s | > 5, then dislocation dipoles are formed as a result of structural relaxation. Unlike metals, in a CNT bundle, vacancy clusters with more than two vacancies take the form of voidions (local decreasing density in close-packed rows), while interstitial CNTs always form crowdions (local increasing density in close-packed rows). It is shown that the observed effects are caused by deformation (elliptization) of the cross-sections of soft carbon nanotubes at the cores of defects. The obtained results highlight significant differences in the behavior of defects in crystals of deformable particles and in conventional crystals.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 9","pages":"750 - 757"},"PeriodicalIF":2.4,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148719122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0