Physics of the Solid State最新文献_第3页

Ultra-Low Thermal Conductivity of Germanium Nanowires 超低导热率的锗纳米线

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424601127

A. V. Pavlikov, A. M. Sharafutdinova, C. I. Isacova, A. I. Cocemasov, D. L. Nika

引用次数: 0

Investigation of Magnetic and Topography Properties for Fe50Co50 Various Thicknesses of Thin Film Grown on Glass Substrate by Using UHV RF Magnetron Sputtering 利用超高压射频磁控溅射技术研究玻璃基底上生长的不同厚度 Fe50Co50 薄膜的磁性和形貌特性

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424600936

G. Manikandan

{"title":"Investigation of Magnetic and Topography Properties for Fe50Co50 Various Thicknesses of Thin Film Grown on Glass Substrate by Using UHV RF Magnetron Sputtering","authors":"G. Manikandan","doi":"10.1134/S1063783424600936","DOIUrl":"10.1134/S1063783424600936","url":null,"abstract":"Since magnetic energy is exchanged across spin domains, magnetic anisotropy is important for applications using spintronic devices. FeCo is unique among d-block magnetic materials because of its strong spin polarization and higher-than-room-temperature of Curie temperature. In current day-to-day electrical applications, dimensions shrink down to the nanoscale range. It has been demonstrated that the thin film technique improves these materials’ basic characteristics. The FeCo thin film was prepared on a glass substrate with various thicknesses such as 10, 30, and 50 nm. The magnetic properties and surface were investigated to corresponding thicknesses at room temperature by using the AFM and VSM techniques, respectively. The magnetic properties varied by the topography nature of the prepared thin films and all the thickness films exhibited the hysteresis loop that confirmed that thin film has a magnetic nature at room temperature. For spin valve devices, electrode preferences differ; instead, the same magnetic material with varying thicknesses may be used as top and bottom electrodes.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Post-Annealing Treatments on Third-Order Nonlinear Optical Properties in ZnO Thin Films 退火后处理对氧化锌薄膜三阶非线性光学特性的影响

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-05 DOI: 10.1134/S1063783424600754

Sanjeev Kumar, Amit Jain, N. Santakrus Singh, Manohar Singh

引用次数: 0

TCAD Design of Deep-Ultraviolet LED Based on ZnO/AlGaN Multiple Quantum Wells with Tunable Wavelength 基于 ZnO/AlGaN 多量子阱的可调谐波长深紫外 LED 的 TCAD 设计

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600791

Jie Chen, Chenxing Jiang, Yifan Yang, Zhendong Ge, Yaqi Han, Tianyou Zhang, Feng Chen, Ying Yang, Zhiyuan Yao, Jiwei Hou, Dawei Gu, Lei Wang

{"title":"TCAD Design of Deep-Ultraviolet LED Based on ZnO/AlGaN Multiple Quantum Wells with Tunable Wavelength","authors":"Jie Chen, Chenxing Jiang, Yifan Yang, Zhendong Ge, Yaqi Han, Tianyou Zhang, Feng Chen, Ying Yang, Zhiyuan Yao, Jiwei Hou, Dawei Gu, Lei Wang","doi":"10.1134/S1063783424600791","DOIUrl":"10.1134/S1063783424600791","url":null,"abstract":"Multiple quantum-wells light-emitting diodes (MQWs-LEDs) are high-performance electroluminescent light sources, which is widely used in solid state lighting, medical, industrial and other fields. Understanding the light emission origin and mechanisms of MQWs-LEDs is crucial for their practical applications. Here, we show the excellent ultraviolet (UV) and deep-ultraviolet (DUV) emissions from ZnO/AlGaN MQWs-LEDs using Technology Computer Aided Design (TCAD) simulation, which deviates from the typical ZnO heterojunction LEDs. The adjustment of the structural parameters of the MQWs was performed to control the emission wavelength in the range of 335–366 nm. After parameter optimization, 342.6–348.7 nm DUV EL from ZnO/AlGaN MQWs is obtained successfully. The deconvolution analysis of the EL spectra was conducted to investigate the origin of the emissions. The results indicate that the structural parameter operation-induced emission blue-shift results from the quantum confinement effect. This work provides new references for designing ZnO-based MQWs and preparing new DUV LEDs.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Magnetic, and Electrical Properties in Ba-Doped BiFeO3 Prepared Using a Sol–Gel Route 采用溶胶-凝胶法制备的掺钡 BiFeO3 的结构、磁性和电性能

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600845

Sachin D. Rajadhyax, Sangeeta G. Dahotre, Rajib Mondal, Umesh L. Shinde, Pranav P. Naik, Snehal Hasolkar

{"title":"Structural, Magnetic, and Electrical Properties in Ba-Doped BiFeO3 Prepared Using a Sol–Gel Route","authors":"Sachin D. Rajadhyax, Sangeeta G. Dahotre, Rajib Mondal, Umesh L. Shinde, Pranav P. Naik, Snehal Hasolkar","doi":"10.1134/S1063783424600845","DOIUrl":"10.1134/S1063783424600845","url":null,"abstract":"Ba-doped bismuth ferrite with chemical composition Bi1 – xBaxFeO3 (x = 0.1, 0.2, 0.3, 0.4, and 0.5) nanoparticles were synthesized by the wet chemical sol–gel method. The substitution of Ba2+ at the Bi3+ site was meant to improve the resistivity, enhance magnetic properties, and suppress the impurity phases of BiFeO3. The samples synthesized were later subjected to X-ray diffraction (XRD) analysis, Field emission scanning electron microscope (FESEM) with energy dispersive spectroscopy (EDS), Magnetic measurements using a vibrating sample magnetometer (VSM) and dielectric analysis along with ferroelectric measurements. XRD patterns obtained at room temperature revealed that the obtained samples are single-phase materials. The crystallite size showed a decrease from 46 to 24.58 nm and the unit cell volume was found to increase following Vegard’s law. The increase in tolerance factor from 0.855 to 0.908 was reported for increasing doping concentrations. The FESEM and SEM micrographs indicate that the particles are rhombohedral-hexagonal in shape. The EDS results confirm the presence of the desired elements Ba, Bi, Fe, and O and the proportionate composition of various elements present as well. The room temperature M–H curve and the M–H curve at 3 K also confirm the enhancement in magnetization with increasing doping concentration. The room temperature dielectric measurements reveal the improving resistivity of the samples with increasing doping concentrations. The increasing grain resistance as revealed by the Cole-Cole plots indicate the decreasing conductivity of doped BFO samples. The P–E measurements confirm the ferroelectric nature of the material.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atmospheric Pressure Chemical Vapor Deposition Grown One-Dimensional ZnO Nanostructures 常压化学气相沉积生长的一维氧化锌纳米结构

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600742

Zahra Mohammed Saeed, Yasir Hussein Mohammed, Samir Mahmmod Ahmad

{"title":"Atmospheric Pressure Chemical Vapor Deposition Grown One-Dimensional ZnO Nanostructures","authors":"Zahra Mohammed Saeed, Yasir Hussein Mohammed, Samir Mahmmod Ahmad","doi":"10.1134/S1063783424600742","DOIUrl":"10.1134/S1063783424600742","url":null,"abstract":"One-dimensional (1D) zinc oxide (ZnO) nanostructures (NSs) as nanowires (NWs) and columnar nanoflakes (NFs) were prepared by atmospheric pressure chemical vapor deposition (APCVD) system. The effect of different thermal treatment times (0, 1, 2, and 3 h) on the physical properties of the grown ZnO NWs was methodically investigated. Further, the surface morphology of such 1D ZnO NSs was studied under different substrates (glass and silicon (Si)). The samples revealed that the synthesized ZnO NWs strongly depended on the thermal treatment time. Prepared samples were well characterized using ultraviolet visible (UV-Vis) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), and energy-dispersive X-ray (EDX) spectroscopy. The optical band gap (Eg) widened from 3.2 to 3.3 eV as the thermal treatment time increased and the transmittance of the NWs improved to approximately 75%, accompanied by a blue-shift at the UV absorption edge. FTIR results disclosed that ZnO absorption bands in the region between 445.5 and 478.3 cm–1 have appeared from interatomic vibrations owing to the stretching of the Zn–O bond. XRD findings of the studied samples disclosed the polycrystalline hexagonal wurtzite structure with preferred orientation along the c-axis. According to the FESEM images, the morphological transition of the hierarchical ZnO NWs to individual NWs architectures was accomplished by increasing the treatment time from 0 to 3 h. Also, FESEM images indicated that the substrate type played a crucial role in determining the morphologies of 1D ZnO NSs. EDX outcomes showed a little Zn deficiency in the prepared samples with slightly different stoichiometric ratios between Zn and O atoms. Our current work could form the foundation for fabricating future nano-optoelectronic devices.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Biogenic Silver Oxide Nanoparticles for Enhanced Electrochemical (N-(4-Hydroxyphenyl)Acetamide) Sensing 用于增强电化学（N-(4-羟基苯基)乙酰胺）传感的生物纳米氧化银粒子

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600638

Syed Yaseen Ahmed, D. Bharathi, Paulson Emerson, A. Muthuvel, Wajeeha Sultana, Balu Mahendran Gunasekaran

{"title":"Biogenic Silver Oxide Nanoparticles for Enhanced Electrochemical (N-(4-Hydroxyphenyl)Acetamide) Sensing","authors":"Syed Yaseen Ahmed, D. Bharathi, Paulson Emerson, A. Muthuvel, Wajeeha Sultana, Balu Mahendran Gunasekaran","doi":"10.1134/S1063783424600638","DOIUrl":"10.1134/S1063783424600638","url":null,"abstract":"Nowadays, the identification of hepatotoxic compounds is necessary for clinical diagnosis as well as quantity management of their pharmaceutical formulations. In this study, silver oxide modified glassy carbon electrode synthesized using leaf extract of Ocimum tenuiflorum is adopted for sensing of (N-(4-hydroxyphenyl)acetamide). This drug molecules has regularly used pain killer that might cause liver injury under specific conditions. In addition, their physiochemical properties of bio-synthesized AgO nanoparticles have been examined with appropriate characterization techniques. Crystalline characteristic of AgO was non-destructively examined by the XRD-structural analysis. Structural examination claimed that the bioconstitutents of Ocimum tenuiflorum was effectively governs silver oxide formations from metal ions. The FT-IR vibrational assignments illustrate the AgO nanoparticles surface was influenced by some of the phytocompounds. Moreover, the overall particle’s uniformity and their distribution has been considerably controlled by the biomolecules. When oxidizing (N-(4-hydroxyphenyl)acetamide) in 0.1 M H2SO4, AgO NPs demonstrated superior electrocatalytic activity compared to bare SPE, and the separated oxidation peak potentials permitted simultaneous detection of the targets with broad linear ranges from 5 × 10–6 to 3.4 × 10–6 mol L–1 low detection limit 8.5 × 10–6 mol L–1, and outstanding precision and accuracy (S/N = 3). The approach has been effectively used to identify ACOP in pharmaceutical pills because AgO nanoparticles demonstrate good stability, reproducibility, and repeatability.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shearing-Type Electron Emission 剪切型电子发射

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-09-04 DOI: 10.1134/S1063783424600675

Hai Lin, Chengpu Liu

{"title":"Shearing-Type Electron Emission","authors":"Hai Lin, Chengpu Liu","doi":"10.1134/S1063783424600675","DOIUrl":"10.1134/S1063783424600675","url":null,"abstract":"“Stretching” and “shearing” are two basic types of depriving neutral matter from a solid. In principle, depriving charged matter from a solid also have similar counterparts. By now, most investigations on electron emission, which is a typical example of depriving charged matter, from a solid are focused on the “stretching” type while another type is rarely considered. The purpose of this work is to explore the possibility and feasibility of another type of depriving charged matter from a solid. Based on quantum many-body theory, this work reveals a feasible technique route of “shearing” electrons from the surface of a metal. Exchange potential among surface electrons can significantly modify dispersion relation curve of the surface 2D band and hence its electronic structure. Flatten dispersion relation curve near the highest occupied state enables a small scalar potential perturbation (at eV-level) to induce a large increment in parallel-to-surface momentum (hbar {{k}_{{||}}}) as well as that in kinetic energy (KE) (at tens eV-level). Such a high KE is sufficiently to warrant emitted electrons to surpass, rather than tunnel, barrier in vacuum. This can be achieved even for external DC fields at very low strengthes such as 1 V/mm level and 10–4 Tesla-level. Independence of high-voltage component/element implies a broad application prospect of this phenomenon, especially as an electron source. Targeted designing electrodes enables such a route to yield a practical electron emission source.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142193287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical Calculation of the Structural, Electronic, and Magnetic Properties of a New Rare-Earth Based Full Heusler Alloys Pr2CoZ (Z = Al, Ga, In) 新型稀土基全 Heusler 合金 Pr2CoZ（Z = Al、Ga、In）的结构、电子和磁性能的理论计算

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600699

S. Rouag, D. Amari

引用次数: 0

Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor 氮化铝缓冲层厚度对 In0.17Al0.83N/GaN 高电子迁移率晶体管电子和电气特性的影响

IF 0.9 4区物理与天体物理

Physics of the Solid State Pub Date : 2024-08-07 DOI: 10.1134/S1063783424600766

Abdelmalek Douara, Abdelaziz Rabehi, Mawloud Guermoui, Rania Daha, Imad Eddine Tibermacine

{"title":"Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor","authors":"Abdelmalek Douara, Abdelaziz Rabehi, Mawloud Guermoui, Rania Daha, Imad Eddine Tibermacine","doi":"10.1134/S1063783424600766","DOIUrl":"10.1134/S1063783424600766","url":null,"abstract":"In this paper, we delved into the intricacies of In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) using a comprehensive simulation model and by Leveraging the capabilities of Nextnano simulation software. We extensively explored how different thicknesses of the AlN buffer layer impact electronic and electrical properties. Our study was centered on scrutinizing the density and mobility of the two-dimensional electron gas (2-DEG) within the In0.17Al0.83N/GaN HEMT structure. Aiming to understand how different AlN buffer layer thicknesses impact device performance. Our findings unveil a crucial relationship between AlN buffer layer thickness and critical performance metrics. Specifically, we observed significant trends in output current and transconductance, shedding light on the direct influence of AlN thickness on device behavior. Our simulations identified an optimal AlN thickness of 350 nm, demonstrating the highest output current and surpassing a transconductance peak of 510 mS/mm. Importantly, our computational predictions closely align with experimental observations, validating the reliability and accuracy of our simulation model. Through this meticulous analysis, we contribute valuable insights that can guide the design and optimization of In0.17Al0.83N/GaN HEMT, paving the way for improved device performance and functionality across various electronic applications. Our study underscores the importance of considering AlN buffer layer thickness in designing and engineering high-performance HEMTs, highlighting avenues for future research and development in semiconductor device technology.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141948046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0