Performance Evaluation and Thermal Stability Assessment of Graphene Nanoribbon Doped Dielectrically Modulated Tunnel Field Effect Transistor

The performance of Dual Material Heterodielectric Graphene Nanoribbon channel tunnel FET (DM-H-GNR-TFET) and TFETs based on Silicon (DM-H-Si-TFET and DM-Si-TFET) are compared in this work. The narrow bandgap, higher carrier mobility, and fast saturation velocity of the two-dimensional material GNR have led to its proposal as a channel material to improve device performance. This analysis of the proposed structure’s DC, RF, performance and thermal stability has been conducted. The GNR-based channel TFET demonstrates a higher current ratio of the order of 10¹⁴, in contrast to the Si-based TFET (~10¹¹) with improved subthreshold swing. This investigation encompasses the influence of temperature on the DC parameters, in addition to the analog/RF figures of merit for the proposed structure. Moreover, the results are compared with existing literature on TFETs, revealing that DM-H-GNR-TFET excels Si-based TFETs and other variants.