Physics of the Solid State最新文献_第2页

First Principles Study of Structural, Electronic, Magnetic, and Elastic Properties of Ir2CrZ (Z = Ga,Ge) Ir2CrZ （Z = Ga,Ge）结构、电子、磁性和弹性的第一性原理研究

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603133

Djilali Amari, Haroun Righi, Mohamed Mokhtari, Soumia Zeffane, Fethallah Dahmane

{"title":"First Principles Study of Structural, Electronic, Magnetic, and Elastic Properties of Ir2CrZ (Z = Ga,Ge)","authors":"Djilali Amari, Haroun Righi, Mohamed Mokhtari, Soumia Zeffane, Fethallah Dahmane","doi":"10.1134/S1063783425603133","DOIUrl":"10.1134/S1063783425603133","url":null,"abstract":"Within the framework of density functional theory (DFT), the structural, electronic, magnetic, and elastic properties of Ir2CrZ (Z = Ga,Ge) full-Heusler alloys are investigated. A comparison is made between the Cu2MnAl and Hg2CuTi type structures. It has been discovered that the Cu2MnAl structure’s ferromagnetic state is energetically more stable than the Hg2CuTi state. Spin-polarized computations reveal that the spin-up electrons of the Ir2CrZ (Z = Ga,Ge) compounds exhibit metallic behavior in both the Cu2MnAl and Hg2CuTi structures. For the spin-down electrons, metallic behavior is observed in the Hg2CuTi structure, whereas in the Cu2MnAl structure, they exhibit semiconducting behavior. Ir2CrZ, where Z is either Ga or Ge, is a half-metallic ferromagnet (HMF) with a magnetic moment of 3.0 and 4.0 µB/f.u, respectively. Theoretically, this research will result in experimental efforts in the subject of spintronics and its applications.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"290 - 299"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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First-Principles Investigation of the Structural, Electronic, and Thermoelectric Properties of YPtxNi1–xSb Half-Heusler Alloys with x = 0, 0.25, 0.50, 0.75, and 1 x = 0、0.25、0.50、0.75和1时YPtxNi1-xSb半heusler合金结构、电子和热电性能的第一性原理研究

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603807

Said Chahlat, Sabrina Bounab, Lahcene Nasri, Abdelouahab Bentabet

{"title":"First-Principles Investigation of the Structural, Electronic, and Thermoelectric Properties of YPtxNi1–xSb Half-Heusler Alloys with x = 0, 0.25, 0.50, 0.75, and 1","authors":"Said Chahlat, Sabrina Bounab, Lahcene Nasri, Abdelouahab Bentabet","doi":"10.1134/S1063783425603807","DOIUrl":"10.1134/S1063783425603807","url":null,"abstract":"This study presents a comprehensive first-principles investigation of the structural, electronic, and thermoelectric properties of the YPtxNi1–xSb (x = 0, 0.25, 0.50, 0.75, 1) half-Heusler alloys, using density functional theory within the generalized gradient approximation (PBEsol). Our calculations of the lattice constant and bulk modulus for the parent compounds YNiSb and YPtSb show excellent agreement with available data. A key and unusual finding is the anomalous simultaneous increase in both the lattice parameter and the bulk modulus with rising Pt concentration, which deviates from the typical inverse correlation. Electronic band structure calculations reveal that all compositions are direct bandgap semiconductors. Furthermore, an analysis of the thermoelectric transport properties using the BoltzTraP code demonstrates high Seebeck coefficients and promising power factors for both p-type and n-type doping. The identified narrow direct bandgap in the YPtxNi1–xSb series suggests these materials are not only promising for efficient thermoelectric applications but also hold potential for infrared electronic and optoelectronic devices.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"236 - 245"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Topological Phase Diagram in Finite-Thickness Semiconductor Nanowires with Proximity-Induced Chemical Potential, Zeeman Splitting, and Superconducting Gap 具有近似诱导化学势、塞曼分裂和超导间隙的有限厚度半导体纳米线拓扑相图

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603029

Chol-Song Yun, Chol Gyu Nam, Hak-Bom Kang, Chang-Il Kim, Chol-Jin Kang

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Structural and Solid-State Properties of a Hydrogen-Bonded Pentanedioic Acid–Thiourea Co-Crystal 氢键戊二酸-硫脲共晶的结构和固态性质

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603868

Helen Merina Albert, SK. Fakruddin Babavali, Archana Asatkar, R. Priya, N. R. Rajagopalan, V. Nagalakshmi, Nellore Manoj Kumar, V. Balachandar

{"title":"Structural and Solid-State Properties of a Hydrogen-Bonded Pentanedioic Acid–Thiourea Co-Crystal","authors":"Helen Merina Albert, SK. Fakruddin Babavali, Archana Asatkar, R. Priya, N. R. Rajagopalan, V. Nagalakshmi, Nellore Manoj Kumar, V. Balachandar","doi":"10.1134/S1063783425603868","DOIUrl":"10.1134/S1063783425603868","url":null,"abstract":"Pentanedioic acid-thiourea (PAT), a new hydrogen-bonded organic co-crystal, was produced using a slow evaporation method and examined for its structural and solid-state properties. Single-crystal X‑ray diffraction confirmed an orthorhombic Pnma structure, stabilized by N–H···O and O–H···S hydrogen-bonding frameworks. The FTIR spectrum validated the functional groups and successful co-crystallization. Optical absorption analysis revealed a strong UV band at 232 nm, a sharp cutoff at 298 nm, and a wide bandgap of 4.165 eV, showing UV-filtering and semiconducting properties. The low Urbach energy (0.085 eV) indicated that the material was well-crystallized and had fewer defects. Dielectric tests revealed temperature and frequency-dependent behavior, with AC conductivity following a thermally activated hopping process. Thermal investigation revealed a multi-stage decomposition process, with stability up to 126°C. Thus, the remarkable solid-state properties of PAT co-crystal make it a suitable material for optoelectronic and UV-filtering uses.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"300 - 310"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications 射频电源应用中p-GaN栅极Al0.23Ga0.77N/GaN hemt与Al0.05Ga0.95和In0.1Ga0.9N背障的比较设计

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603819

P. Gowtham, G. Vetrichelvi, K. Balaji, S. Karthikeyan

{"title":"Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications","authors":"P. Gowtham, G. Vetrichelvi, K. Balaji, S. Karthikeyan","doi":"10.1134/S1063783425603819","DOIUrl":"10.1134/S1063783425603819","url":null,"abstract":"This study systematically investigates the static and dynamic behaviors of p-GaN-gate high electron mobility transistors (HEMTs) incorporating two distinct back barrier compositions: the conventional Al0.05Ga0.95N and a In0.1Ga0.9N layer. Both devices are designed with identical geometries, featuring a gate length of 1.2 μm. The InGaN back barrier HEMT consistently delivers superior output current (({{I}_{{text{D}}}})) and transconductance (({{g}_{m}})) compared to its AlGaN counterpart, reaching peak values of approximately 0.82 A/mm and 0.50 mS/mm, respectively. In contrast, the AlGaN backbarrier exhibits lower maxima, with ({{I}_{{text{D}}}}) of 0.60 A/mm and ({{g}_{m}}) near 0.40 mS/mm. The InGaN-structured device also surpasses AlGaN in RF performance, achieving a maximum unity current gain cutoff frequency (({{f}_{T}})) of about 75 GHz, versus 61 GHz for AlGaN. This heightened ({{f}_{T}}) stems from improved channel carrier transport and reduced gate-drain capacitance (({{C}_{{{text{GD}}}}})), with InGaN backbarrier showing a lower ({{C}_{{{text{GD}}}}}) (0.8 × 10–13 F/mm) compared to AlGaN (1.3 × 10–13 F/mm) in the high-bias regime, which is critical for fast switching and minimizing power losses. The InGaN back barrier HEMT demonstrates a higher gate-source capacitance (({{C}_{{{text{GS}}}}})) of about 1.0 × 10‒12 F/mm, which enables enhanced transconductance for efficient gate control. The InGaN back barrier HEMT sustains a substantial breakdown voltage of 436 V, underscoring its potential for high-power and high-frequency electronic applications, while the AlGaN back barrier offers an even higher breakdown of 543 V.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"271 - 282"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical Properties of Colorless Polymer Coatings on the Mirrored Surface of Containers 容器镜面上无色聚合物涂层的光学性能

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603212

I. Enrique García Balderas, A. P. Kondratov, V. Yu. Vereshchagin, A. Yu. Pogiba

{"title":"Optical Properties of Colorless Polymer Coatings on the Mirrored Surface of Containers","authors":"I. Enrique García Balderas, A. P. Kondratov, V. Yu. Vereshchagin, A. Yu. Pogiba","doi":"10.1134/S1063783425603212","DOIUrl":"10.1134/S1063783425603212","url":null,"abstract":"The optical characteristics of light-reflecting surfaces, birefringence, and pleochroism effects in multilayer coatings of metal, glass, and plastic packaging made from biaxially oriented isotactic polypropylene (BOPP) were investigated. Birefringence induces bright coloration in transparent, colorless BOPP films under polarized light, leading to the manifestation of pleochroism. Polarized light arises from the reflection of natural or artificial illumination on mirrored surfaces, with the proportion of polarized radiation in the reflected light flux depending on the angle of incidence and the properties of the dielectric mirror surface. The study proposes utilizing the color effects observed in polymer films to enhance the visual appeal of packaging and to provide protective marking. The protection of product packaging against counterfeiting represents a significant social and economic challenge in modern society. Protective marking, when combined with information encoding, ensures consumer safety—particularly for pharmaceuticals and corrosive household chemicals. The reliable encoding and recognition of hidden security information on transparent polymer packaging depend on the contrast and color differentiation of structural elements, such as barcodes or trademarks, which become visible only under polarized light. This article presents the results of instrumental measurements and quantitative assessments of colored radiation reflected from colorless mirrored surfaces of metal, glass, and polymer containers. The optimal number of transparent polymer film layers required to achieve vivid coloration of labels or packaging visible in polarized light, as well as the contrast necessary for effective protective marking, has been determined.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"283 - 289"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance Investigation of an L-Shaped Tunneling Gate TFET Photodetector for Near-Infrared Detection 用于近红外探测的l形隧道栅TFET光电探测器的性能研究

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603765

Gali Madhavi, Chakradhar Adupa, Ramkumar Natarajan, Anil Kumar Pathakamuri, R. S. Venkatesan

{"title":"Performance Investigation of an L-Shaped Tunneling Gate TFET Photodetector for Near-Infrared Detection","authors":"Gali Madhavi, Chakradhar Adupa, Ramkumar Natarajan, Anil Kumar Pathakamuri, R. S. Venkatesan","doi":"10.1134/S1063783425603765","DOIUrl":"10.1134/S1063783425603765","url":null,"abstract":"This study introduces an innovative photodetector device that integrates an L-shaped top gate with a photosensitive back gate (LTG-PBG-TFET), specifically engineered to detect incident light within the near-infrared (NIR) wavelength range of 750–1050 nm. The LTG-PBG-TFET design leverages the advantages of both the L-shaped top gate and the photosensitive bottom gate to extend the edge tunneling zone at the channel/source (C/S) junction. This structural configuration enhances the photocurrent (Ilight) response, subthreshold swing (SSavg), and turn-ON voltage (Vth) under illumination. Furthermore, the slight elevation near the gate corner minimizes corner effects at the source/channel interface, which in turn improves Ilight/Idark performance as the illumination wavelength (λ) transitions from 1050 to 750 nm. Consequently, notable enhancements in Ilight, SSavg, and the Ilight/Idark ratio were observed, yielding a high spectral sensitivity (Sn) of approximately 54.4 and a signal-to-noise ratio (SNR) of about 82.2 for the proposed LTG-PBG-TFET device. Additionally, incorporating a light exposure window in the back gate region increases the active area for electron-hole pair (EHP) generation, thereby enhancing quantum efficiency (η) and responsivity (R), particularly at longer wavelengths around 1050 nm. Finally, the influence of acceptor–donor trap charges at the semiconductor/oxide interface on the Sn of the device was examined. Results indicate that Sn remains relatively stable as the wavelength (λ) is tuned between 750 and 1050 nm.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"260 - 270"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Morphological, Vibrational, and Optical Properties of Mg-Doped ZnO Nanoparticles Synthesized via Sol–Gel Method 溶胶-凝胶法制备镁掺杂ZnO纳米颗粒的结构、形态、振动和光学性质

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-03-13 DOI: 10.1134/S1063783425603303

Pujarani Parida, Virendra Kumar Verma

{"title":"Structural, Morphological, Vibrational, and Optical Properties of Mg-Doped ZnO Nanoparticles Synthesized via Sol–Gel Method","authors":"Pujarani Parida, Virendra Kumar Verma","doi":"10.1134/S1063783425603303","DOIUrl":"10.1134/S1063783425603303","url":null,"abstract":"Zn1–xMgxO (x = 0, 0.05, 0.1, and 0.15) nanoparticles (NPs) were prepared via the sol–gel method. A comprehensive investigation of the structural, morphological, vibrational, and optical characteristics of the prepared NPs was carried out by using the X-ray diffraction method (XRD), scanning electron microscopy (SEM), Fourier-transformed infrared spectroscopy (FTIR), and Ultraviolet-visible (UV–Vis) spectroscopy. XRD analysis confirmed the hexagonal wurtzite structure of ZnO. The average crystallite size decreased with increasing Mg concentration. Surface morphology was revealed by the SEM. FTIR spectra exhibited peaks below 700 cm–1 corresponding to the zinc oxide (ZnO) and doped ZnO NPs. The UV–Vis result shows a blue shift in the optical bandgap for all samples when the Mg concentration increases in the ZnO lattice. The Tauc equation and Urbach tail analysis were employed to determine the optical bandgap, assess interband transitions, and evaluate defect-related states. The increased bandgap and improved optical characteristics make Mg-doped ZnO NPs promising candidates for optoelectronic devices, particularly in UV detectors and photovoltaic applications.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 3","pages":"211 - 221"},"PeriodicalIF":1.8,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Retraction Note: Structural Position and Charge State of Nickel in SrTiO3 附注：镍在SrTiO3中的结构位置和电荷状态

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-02-19 DOI: 10.1134/S1063783426030017

I. A. Sluchinskaya, A. I. Lebedev, A. Erko

引用次数: 0

Performance Trade-Offs and Optimization of Single and Dual-Layer Passivation AlGaN/GaN HEMTs with Double-Deck Gate Field Plate 双层栅场极板单、双层钝化AlGaN/GaN hemt的性能权衡与优化

IF 1.8 4区物理与天体物理

Physics of the Solid State Pub Date : 2026-02-16 DOI: 10.1134/S1063783425603340

Pichingla Kharei, Achinta Baidya, Niladri Pratap Maity

{"title":"Performance Trade-Offs and Optimization of Single and Dual-Layer Passivation AlGaN/GaN HEMTs with Double-Deck Gate Field Plate","authors":"Pichingla Kharei, Achinta Baidya, Niladri Pratap Maity","doi":"10.1134/S1063783425603340","DOIUrl":"10.1134/S1063783425603340","url":null,"abstract":"This study presents a comprehensive evaluation of AlGaN/GaN-based high electron mobility transistors (HEMTs) with various passivation schemes, providing critical insights for device optimization. HfO2-passivated devices exhibit superior breakdown characteristics, achieving a remarkable breakdown voltage (Vbr) of 788 V, which confirms the advantage of high-k dielectrics in enhancing voltage withstand capability. In contrast, SiO2-passivated HEMTs exhibit optimal radio frequency (RF) performance, including the highest cut-off frequency ( fT), which is attributed to their lower parasitic capacitance, making them ideal for high-frequency applications. This reflects a fundamental trade-off between breakdown strength and frequency response in HEMT devices. To overcome this limitation, a dual-passivation approach is investigated. Type-A exhibits superior DC performance, with higher drain saturation current (Idss), transconductance (gm), and Vbr, owing to the stronger gate control and electric field modulation provided by the high-k HfO2 top layer. Both dual-layer passivation schemes significantly enhance Vbr (~798 V for Type-A, ~797 V for Type-B) compared to single-layer passivation. In RF analysis, Type-B (Si3N4 on top, HfO2 below) outperforms Type-A. Although Type-A exhibits higher fT up to 0.4 µm, thicker HfO2 increases parasitic capacitances, degrading GFP, TFP, and GTFP. In contrast, Type-B improves with thicker Si3N4, validating the advantage of placing a low-k on top of a high-k dielectric. Considering composite FOMs (TFP, GFP, GTFP, VEA, AV), Type-B achieves superior overall RF performance.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 2","pages":"134 - 146"},"PeriodicalIF":1.8,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147339266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0