{"title":"Exploring Electronic Transport Properties of Vanadium-Doped Barium Calcium Titanate Ceramics","authors":"Lalita Gautam, Preeti Redhu, Sonia Ahlawat, Suman Pawaria, Preeti Sharma","doi":"10.1134/S1063783424601851","DOIUrl":"10.1134/S1063783424601851","url":null,"abstract":"<p>This paper explores the effect of vanadium doping on electric modulus, impedance, and AC conductivity over a frequency range of 100 Hz to 1 MHz and a temperature span of 573 to 753 K in barium calcium titanate (BCT) ceramics synthesized via solid-state reaction process. The frequency-dependent AC conductivity obeys Almond–West law. Various parameters such as σ<sub>dc</sub>, ω<sub>H</sub>, and <i>s</i> have been obtained from the theoretical fitting of σ'(ω) according to Almond–West law. An analysis of the frequency exponent <i>s</i> indicates that the conduction mechanism in the investigated samples follows Correlated Barrier Hopping Model. The activation energy values for DC conduction range from 0.71 to 0.80 eV. The relaxation time and activation energies of the studied ceramics extracted from fitting the imaginary part of the modulus were found to be between 2.98 and 664 µs and 0.917 to 1.024 eV, respectively. Nyquist plots fitted well using a series combination of two R-CPE equivalent circuits, indicating that the relaxation process is of a non-Debye type, influenced by both grain and grain boundaries. The resistances of the grains and grain boundaries found to decrease with increasing temperature, indicating that the ceramic samples exhibit semiconducting properties. These studies suggest the applications of prepared ceramic compositions for high sensitivity sensors, capacitors used in automotive, and power electronics operating under high thermal stress, actuators, solid oxide fuel cells (SOFCs).</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"75 - 84"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Bioud, N. Benchiheub, A. Benamrani, M. A. Ghebouli, M. Fatmi, Faisal Katib Alanazi
{"title":"Computational Investigation of Thermodynamic and Mechanical Properties of B2-type CoTi Intermetallic Compound","authors":"N. Bioud, N. Benchiheub, A. Benamrani, M. A. Ghebouli, M. Fatmi, Faisal Katib Alanazi","doi":"10.1134/S1063783424601760","DOIUrl":"10.1134/S1063783424601760","url":null,"abstract":"<p>This work investigates the mechanical properties of B2-type CoTi material, using the density functional theory within the pseudopotential method and a plane waves basis set as implemented in the Quantum Espresso code. Our calculation yielded values of Debye temperature θ<sub>D</sub> = 414.6 K and elastic constants <i>C</i><sub>11</sub> = 226.50 GPa, <i>C</i><sub>12</sub> = 129.55 GPa, and <i>C</i><sub>44</sub> = 226.50 GPa, respectively. To test the incertitude of calculated elastic constants <i>C</i><sub><i>ij</i></sub> for B2-type CoTi intermetallic compound, we compared our obtained results with the experimental values of the literature. Our findings show a good agreement with experimental data. Furthermore, using an approximation based on the quasi-harmonic model, we explore various thermodynamic properties of the B2-type CoTi intermetallic compound. The thermodynamic properties obtained in this study reveal that the free energy decreases gradually with the augmentation of the temperature, while both the heat capacity as well as the entropy increase with the raising of the temperature. At <i>T</i> = 298 K, our calculation yielded values of entropy <i>S</i> = 68.35 J mol<sup>–1</sup> K<sup>–1</sup> and heat capacity <i>C</i><sub>V</sub> = 46.61 J mol<sup>–1</sup> K<sup>–1</sup>, respectively. To the authors’ knowledge, no previous study has reported theoretical data on the thermodynamic properties for CoTi material.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"68 - 74"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Poornima B Shetty, K. I. Maddani, Meera R. Gumaste
{"title":"Gadolinium-Doped Nickel Ferrite (NiFe2O4) Nanoparticles: Structural, Optical, and Magnetic Characterization","authors":"Poornima B Shetty, K. I. Maddani, Meera R. Gumaste","doi":"10.1134/S1063783424601152","DOIUrl":"10.1134/S1063783424601152","url":null,"abstract":"<p>The study details the nickel ferrite nanoparticles (NiFe<sub>2</sub>O<sub>4</sub>) synthesized via the citrate gel auto combustion method doped with gadolinium and its characterization. The shape of synthesized powder is nearly spherical and exhibits a cubic spinel structure. Crystallite sizes of the synthesized powders are in the nano range. As the Gd concentration elevates, the lattice parameter expands while the crystallite size reduces. In spinel ferrites the tetrahedral and octahedral sites refer to two characteristic peaks and are revealed by the FTIR spectra. The synthesized powders resemble the presence of quantum confinement. Magnetic hysteresis measurements at room temperature suggest a reduction in saturation magnetization with Gd ion doping. The hysteresis loops of the experimental samples portray that these are soft magnets and associated squareness values are somewhat moderate. With an increasing Gd concentration, magnetization declines. The cation distribution on Fe<sup>+3</sup> sites by Gd appears to be responsible for an overall decrease in magnetic moment.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"27 - 38"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dushyant Singh, Chandan Bhai Patel, Samir Ranjan Sahoo, Ranjan K. Singh, Rahul Kumar, Krista R. Khiangte
{"title":"Temperature-Dependent Raman Spectroscopy Analysis of Epitaxially Grown Ge0.91Sn0.09 on GaAs (001) Substrate","authors":"Dushyant Singh, Chandan Bhai Patel, Samir Ranjan Sahoo, Ranjan K. Singh, Rahul Kumar, Krista R. Khiangte","doi":"10.1134/S1063783424601887","DOIUrl":"10.1134/S1063783424601887","url":null,"abstract":"<p>We report on the epitaxial growth of Ge<sub>0.91</sub>Sn<sub>0.09</sub> alloy epilayers on a GaAs (001) substrate by low-temperature molecular beam epitaxy. Temperature-dependent Raman measurements were used to investigate the behavior and stability of Sn in Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> grown on GaAs by examining the behavior of the longitudinal optical phonon modes originating from both the Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> epilayers and the GaAs substrate. The Raman data reveals improved crystalline quality and increased Sn content in the Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> epilayer as the temperature is increased from 100 to 580 K. However, at a temperature of about <i>T</i> = 620 K, the mobility and segregation of Sn in the Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> epilayers dramatically increases. This behavior is similar to reports of Sn mobility and potential segregation from Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> grown on both Ge and Si substrates, despite differences in atom chemistry between Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> and the different substrates. Likely, the transition temperature for which Sn becomes mobile in Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> is dominated by its dependence on the bonding between Ge and Sn and level of strain in the Ge matrix.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"39 - 47"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation of Upper Critical Magnetic Field (HC2(T )) of NdFeAsO1–xFx by Ginzburg–Landau Two-Band Model at x = 0.2","authors":"Derejaw Gardew","doi":"10.1134/S1063783424601747","DOIUrl":"10.1134/S1063783424601747","url":null,"abstract":"<p>This study uses the Ginzburg–Landau (GL) two-band model to theoretically investigate temperature dependent of the upper critical magnetic field for iron-based superconductor NdFeAsO<sub>1–<i>x</i></sub>F<sub><i>x</i></sub> (Nd-1111). Plotting of the figures for the perpendicular and parallel upper critical magnetic fields, as well as the angle dependent of the upper critical magnetic field versus the temperature of the superconductor Nd-1111, is effectively achieved. As the temperature rises, the two oriented upper critical magnetic fields progressively decrease and vanish at the superconducting transitional temperature of Nd-1111. In addition, a graphic representation and calculation of Ginzburg–Landau parameters coherence lengths and penetration depths are provided. The previously indicated GL parameters grow as temperature rises and diverge at the superconducting material’s 47 K superconducting transitional temperature. Similarly, the GL characteristic parameter’s phase diagram is displayed against temperature; it diminishes as temperature rises and disappears at its transitional temperature.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"1 - 8"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CdS Thin Film Characterization and Current Conduction Mechanisms in Pt/CdS/n-InP Heterojunction Diode","authors":"F. E. Cimilli Çatır","doi":"10.1134/S1063783424601577","DOIUrl":"10.1134/S1063783424601577","url":null,"abstract":"<p>This study analyzed the optical and structural properties of a CdS thin film grown on FTO and <i>n</i>‑InP substrates to understand its application in semiconductor technology. The bandgap of the CdS film was calculated as 2.432 eV. The film displayed uniform growth and coated the entire surface effectively, as observed through various microscopy and spectroscopy techniques. Furthermore, a Pt/CdS/<i>n</i>-InP/In he-terojunction was developed, and its temperature-dependent <i>I</i>–<i>V</i> characteristics were studied, revealing an ideality factor of 1.161 and a barrier height of 0.793 eV. These values suggested that the CdS interlayer affects the barrier height and ideality factor, particularly under varying temperatures, indicating barrier inhomogeneity. It has been found that the barrier height ranges from 0.337 eV at 120 K to 1.002 eV at 400 K, with corresponding ideality factor changes, demonstrating the Gaussian distribution of inhomogeneous barrier heights across different temperatures.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"52 - 62"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Subramanyam, B. Rajesh Kumar, K. Chandrasekhar Reddy
{"title":"Micro-Structural, Surface Morphological, and Optical Properties of Sol–Gel Spin Coated Sb-Doped SnO2 Thin Films","authors":"D. Subramanyam, B. Rajesh Kumar, K. Chandrasekhar Reddy","doi":"10.1134/S1063783424601589","DOIUrl":"10.1134/S1063783424601589","url":null,"abstract":"<p>Antimony (Sb: 2 to 10 wt %) doped SnO<sub>2</sub> thin films were synthesized by sol–gel spin coating process. X-ray diffraction (XRD) analysis of Sb-doped SnO<sub>2</sub> films exhibits polycrystalline tetragonal structure with orientation along (1 1 0). The crystallite size of Sb-doped SnO<sub>2</sub> films decreased from 32 to 14 nm with increased Sb dopant in SnO<sub>2</sub>. The micro-structural parameters micro-strain, dislocation density, stress, and strain energy density values are affected by Sb dopant in SnO<sub>2</sub>. The morphology of the films shows spherical-shaped particles composed of an aggregation of small-size crystallites. The surface roughness parameters of Sb-doped SnO<sub>2</sub> thin films were analyzed using atomic force microscopy. X-ray photoelectron spectroscopy studies confirm the presence of Sn<sup>4+</sup> and low-valence states of Sb<sup>3+</sup>. The optical band gap of Sb-doped SnO<sub>2</sub> thin films varied from 3.57 to 4.16 eV with an increment of the doping concentration of Sb in SnO<sub>2</sub>.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"17 - 26"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vipin Kumar, Dhirendra Kumar Sharma, Kapil Kumar Sharma, Akansha Agrwal, Parvin Kumar, R. A. Zargar, D. K. Dwivedi, N. P. Yadav, Monika Gupta, Pradeep Kumar
{"title":"Structural and Optical Characterization of ZnO and ZnO:Ag Films Produced by Sol–Gel Mechanism Combined with Screen-Printing","authors":"Vipin Kumar, Dhirendra Kumar Sharma, Kapil Kumar Sharma, Akansha Agrwal, Parvin Kumar, R. A. Zargar, D. K. Dwivedi, N. P. Yadav, Monika Gupta, Pradeep Kumar","doi":"10.1134/S1063783424601735","DOIUrl":"10.1134/S1063783424601735","url":null,"abstract":"<p>Zinc oxide (ZnO) is a versatile and cost-effective semiconductor with an increased direct energy gap, making it suitable for various technological and scientific applications. In this study, we report the successful fabrication of ZnO and ZnO:Ag films on glass substrates using a combination of two solution-based techniques: the sol–gel method and screen printing. After sintering, the produced films were characterized using X-ray diffraction, optical transmission, and photoluminescence measurements. The X-ray diffraction analysis revealed a hexagonal (wurtzite) phase structure and polycrystalline nature, with a preferred orientation along the (101) plane. The crystallite size increased from 64 to 68 nm upon the substitution of silver (Ag) in the ZnO structure. Both optical transmission and photoluminescence characterizations confirmed a red shift in the ZnO:Ag films. The energy gap narrowed from 3.27 to 3.23 eV with the incorporation of Ag into ZnO. This observed increase in crystallite size and the reduction of the energy gap can be attributed to the successful substitution of Ag in the ZnO lattice.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"63 - 67"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Model of Formation of Nanocomposite Layers on Metal Surfaces by Electro-Explosive Alloying","authors":"A. V. Ionina","doi":"10.1134/S1063783424602017","DOIUrl":"10.1134/S1063783424602017","url":null,"abstract":"<p>The paper presents a new mechanism for the formation of a nanostructured layer in the near-surface alloying zone during pulsed plasma treatment of metals. The mechanism is based on the Kelvin–Helmholtz (KH) instability, which occurs at the interface between the plasma and the melt. The KH instability leads to the formation of waves at the interface, which then disintegrate into small droplets. These droplets are solidified to form a nanostructured layer. The proposed mechanism allows us to explain the penetration of alloying elements into the depth of the alloying zone and more uniform alloying compared with traditional methods. To quantify the mechanism, a dispersion equation for the KH problem is obtained, taking into account viscous and capillary stresses in the melt. The dependence of the increment on the wavelength of surface disturbances is analyzed. The increment is shown to have a maximum in the nanometer range at a relative plasma and melt velocity in the range of 100–1000 m/s, achieved under processing conditions. A model is proposed to explain the undulating nature of the interface between the zone of electroexplosive alloying (EEA) and the metal base. The model is based on the development of the KH instability at the melt–plasma interface; resonant interaction of KH waves with inhomogeneities of the interface. Numerical calculations have been carried out, which confirm the proposed mechanism. The dependence of the amplitude of the boundary oscillations on time is obtained. The process of blurring the boundary due to percolation mixing is described.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 1","pages":"9 - 16"},"PeriodicalIF":0.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Johnson Jeyakumar, R. Piriyadharsini, M. Jothibas
{"title":"An Investigation into the Dynamic Photocatalytic Degradation of Organic Pollutants in Sunlight Exposure with ZnO Nanoparticles Synthesized Using a Green Approach","authors":"S. Johnson Jeyakumar, R. Piriyadharsini, M. Jothibas","doi":"10.1134/S1063783424601140","DOIUrl":"10.1134/S1063783424601140","url":null,"abstract":"<p>Currently, phytochemical approaches to metal oxide nanoparticles (NPs) are regarded as the most effective and environmentally benign option due to the varied roles in the formation of nanostructures. This study focused on synthesizing zinc oxide nanoparticles from <i>Citron</i> leaf extract. The synthesized samples were evaluated by XRD, FTIR, XPS, PL, UV-Vis, SEM with EDX, and HRTEM with EDX, respectively. As the leaf extract increases, the structure analysis shows that the ZnO NPs have the average size of the crystallites which decreases from 16.4 to 12.7 nm. The FT-IR study provides assurance about the contribution of various biomolecules to the sample surface and the formation of Zn–O bonding. SEM and HRTEM investigations revealed nanorod-shaped morphology with high particle homogeneity from the 20 mL ZnO NPs. Furthermore, surface chemical state analyses by XPS verified the accommodation of different oxygen-coordinated molecular species. The dye degradation rates of methylene orange and methylene violet organic dyes were found to be 99% and 98%, respectively. These outcomes were attained by using a bio nano-rod catalyst for 60 min under sun light irradiation. According to the findings, the photodegradation of MO dye solution by ZnO nanoparticles via an ecologically benign approach under favorable conditions was effective. Based on the present study, the application of bio-mediated ZnO NPs is suitable for aquatic environmental purification.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 12","pages":"586 - 610"},"PeriodicalIF":0.9,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}