TCAD Optimized GaN/AlGaN MQWs for Tunable UV LED Emission

Abstract

GaN/AlGaN multiple quantum well light-emitting diodes (MQW-LEDs) are high-performance electroluminescent sources with broad applications in solid-state lighting, medical diagnostics, and industrial processing. This study systematically investigates the ultraviolet (UV) emission mechanisms and wavelength-tuning strategies of GaN/AlGaN MQWs through Technology Computer-Aided Design (TCAD) simulations. Unlike conventional GaN heterojunction LEDs, the emission characteristics of the MQW-LEDs are governed by quantum confinement effects (QCE) and polarization field engineering. By optimizing structural parameters, we achieve tunable UV emission across 335–366 nm, with optimized electroluminescence (EL) centered at 342.6–348.7 nm. Deconvolution analysis of EL spectra reveals that the emission blue shift originates from enhanced QCE due to reduced well thickness-an effect that not only increases carrier wavefunction overlap and radiative recombination efficiency by also suppress non-radiative recombination losses by minimizing lattice relaxation and interfacial strain accumulation. These findings establish critical design guidelines for bandgap engineering in nitride-based MQWs and provide theoretical foundations for developing high-efficiency UV LEDs.