V. Ratchagar, S. Senthil, T. Thangeeswari, G. Saravanan, A. Muthuvel, Nabil Al-Zaqri, Amar Al-khawlani
{"title":"Impacts of Different pH Levels on the Magnetic, Optical, and Structural Properties of Sol–Gel Synthesized Nickel Oxide Nanoparticles","authors":"V. Ratchagar, S. Senthil, T. Thangeeswari, G. Saravanan, A. Muthuvel, Nabil Al-Zaqri, Amar Al-khawlani","doi":"10.1134/S106378342560058X","DOIUrl":"10.1134/S106378342560058X","url":null,"abstract":"<p>An uncomplicated and cost-effective sol–gel method was employed to effectively synthesize nickel oxide nanoparticles at various pH levels. A range of analytical instruments is utilized to define the material’s structural, morphological, optical, dielectric, magnetic, and electrochemical characteristics. The tools comprise X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV-visible spectroscopy, photoluminescence spectroscopy (PL), LCZ measurements, and the vibrating sample magnetometer (VSM). Analysis of the powder XRD pattern enabled us to ascertain the crystallite size of the synthesized powder, revealing that the crystallite dimensions increase with elevated pH levels. An elevation in pH level influences the enhancement of the strain value, as demonstrated in the W–H plot. The influence of pH levels on morphological alterations was confirmed by scanning electron micrographs. As pH levels increase, blue shift absorption peaks are observed in the UV-visible spectra. Estimates of the bandgap value were obtained utilizing the Mott and Davis connection, which demonstrates that the bandgap value escalates with rising pH levels. The correlation between temperature and both the dielectric constant and dielectric loss is analyzed within the frequency spectrum of 50 Hz to 5 MHz. The grain effect, as indicated by the Cole–Cole plot, has been eclipsed by the influences at the grain boundary and the interfacial effects in all synthetic materials. Nickel oxide nanoparticles exhibited ferromagnetic properties over a range of pH values. For the NiO sample, the values of squareness and magnetization are enhanced when the pH is set at 8.0 during synthesis. The el-ectrochemical study validated that the NiO sample generated at pH level 8.0 had an improved conductivity property.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 6","pages":"508 - 524"},"PeriodicalIF":1.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of Nickel Incorporation on Electrical and Dielectric Properties of PbS Thin Films Synthesized by Chemical Bath Deposition","authors":"Ankita Banerjee, Partha Mitra","doi":"10.1134/S1063783425600062","DOIUrl":"10.1134/S1063783425600062","url":null,"abstract":"<p>In this work, we report the frequency dependent ac conductivity properties and dielectric behavior of lead sulphide (PbS) thin films. Effect of nickel doping on particle size, optical band gap and electrical conductivity is presented. Pure and Ni doped PbS films (3, 6, and 9% doping) were prepared by chemical bath deposition (CBD) process on biological glass slides. X-ray diffraction (XRD) pattern confirms that cubic mono-phase PbS is formed. Particle size was found to decrease and band gap was found to increase with increasing doping level up to 6%. Complex impedance spectroscopy was utilized to investigate the e-lectrical conductivity and dielectric property. Highest value of electrical conductivity is obtained for 6% doped film.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 6","pages":"499 - 507"},"PeriodicalIF":1.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of Temperature on Dielectric, Impedance, and Optical Properties of Al-Doped ZnO by Wet-Chemical Process","authors":"C. Kalyani, I. V. Subba Reddy, P. Raju","doi":"10.1134/S1063783425600372","DOIUrl":"10.1134/S1063783425600372","url":null,"abstract":"<p>Zinc oxide (ZnO) nanoparticles were substituted with Al in the ratio of 0 to 0.1 and synthesized using co-precipitation. Nanoparticles were characterized by X-ray diffraction and UV-visible spectroscopy. The synthesized nanoparticles of ZnO have shown a wurtzite structure. The crystallite sizes of pure and ZnO nanoparticles substituted with Al were calculated with the help of Debye–Scherrer’s equation. With the rise in Al concentration doping, there is a reduction in the nanoparticles average crystallite size. It was observed that the DC conductivity increases as temperature and Al concentration rise. The dielectric constant ε, and dielectric loss, tan δ rise with temperature rise. Complex impedance analysis distinguishes the grain and grain boundary contribution to the material. The UV-Vis spectrum has shown that as the Al doping concentration increased, Urbach energy increased, and optical conductivity was highest when 0.03 of Al was doped in ZnO (ZA03).</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 6","pages":"433 - 442"},"PeriodicalIF":1.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145166903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Prafulla Kumar Pradhan, G. K. Mishra, N. K. Mohanty, A. B. Panda, Lalatendu Biswal
{"title":"Temperature and Frequency Dependent Electrical Behaviour of Rare-Earth Orthoferrites (RFeO3, R = Nd,Gd)","authors":"Prafulla Kumar Pradhan, G. K. Mishra, N. K. Mohanty, A. B. Panda, Lalatendu Biswal","doi":"10.1134/S1063783425600074","DOIUrl":"10.1134/S1063783425600074","url":null,"abstract":"<p>The electrical properties of the sample RFeO<sub>3</sub> (R = Nd,Gd) were investigated by the study of complex impedance, electric modulus, conductivity, and density of states synthesized through the conventional solid-state reaction technique. The orthorhombic crystal structure was confirmed. The electrical conductivity of RFeO<sub>3</sub> is found to be low at lower frequencies due to space charge polarization and increased gradually, indicating the presence of local charge carriers. The complex impedance study reveals the presence of grain and grain boundary contributions, which are modeled using (RQC) and a combination of (RQC) (RC) electrical circuits. At low temperatures, the grain effect was explained by the quantum tunneling (QTM) model for NdFeO<sub>3</sub> and the correlated barrier hopping (CBH) model for GdFeO<sub>3</sub>. At high temperatures, the grain boundary effect was explained by the CBH model for NdFeO<sub>3</sub> and the Non-overlapping small polaron tunneling (NSPT) model for GdFeO<sub>3</sub>. The shifting of the peaks (imaginary part of the electric modulus) towards the higher frequency with the increase of temperature was explained by the heat-activated mobile ions speeding up the relaxation process.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 6","pages":"455 - 468"},"PeriodicalIF":1.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145166905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. I. Badalova, Z. A. Jahangirli, Yu. A. Abdullayev, S. S. Ragimov, B. H. Mehdiyev, Kh. A. Hidiyev, S. S. Osmanova, N. A. Abdullayev
{"title":"Optical Properties of Magnetic Semiconductors TlFeS2 and TlFeSe2","authors":"Z. I. Badalova, Z. A. Jahangirli, Yu. A. Abdullayev, S. S. Ragimov, B. H. Mehdiyev, Kh. A. Hidiyev, S. S. Osmanova, N. A. Abdullayev","doi":"10.1134/S106378342560116X","DOIUrl":"10.1134/S106378342560116X","url":null,"abstract":"<p>The spectral dependences of the optical conductivity and reflection coefficients of TlFeS<sub>2</sub> and TlFeSe<sub>2</sub> crystals were studied experimentally using spectral ellipsometry and theoretically from first principles using density functional theory (DFT). Based on ellipsometric data in the energy range of 0.7–6.5 eV, the widths of the indirect band gap <i>E</i><sub>g</sub>, reflection coefficients <i>R</i>, Urbach energy <i>E</i><sub>U</sub>, skin depth, and other parameters were determined. Analysis of the refractive index spectrum using the single-effective-oscillator model yielded estimates of the single oscillator energy <i>E</i><sub>so</sub> and the dispersion energy <i>E</i><sub>d</sub>. The experimental data were also used to determine the plasma frequency and the ratio of the charge carrier concentration to the effective mass. Furthermore, the nonlinear refractive indices and the first- and third-order nonlinear susceptibilities were calculated.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 6","pages":"469 - 477"},"PeriodicalIF":1.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. G. Asadullayeva, Z. A. Jahangirli, M. A. Musayev, Q. Y. Eyyubov, A. S. Abiyev
{"title":"Near-Infrared Photoluminescence from ZnIn2S4 Layered Single Crystals","authors":"S. G. Asadullayeva, Z. A. Jahangirli, M. A. Musayev, Q. Y. Eyyubov, A. S. Abiyev","doi":"10.1134/S1063783425601067","DOIUrl":"10.1134/S1063783425601067","url":null,"abstract":"<p>This study presents investigation of the photoluminescence (PL) properties of ZnIn<sub>2</sub>S<sub>4</sub> single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300 K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71 eV). At lower temperatures, this peak undergoes a blue shift, moving towards higher energies. At 5 K, the peak shifted by 40 nm, being observed at 685 nm (1.81 eV). At ambient temperature, the photoluminescence excitation (PLE) analysis of ZnIn<sub>2</sub>S<sub>4</sub> revealed distinct spectral maxima at 2.75 eV (450 nm) and 2.33 eV (530 nm), corresponding to electronic transitions from the valence band to the conduction band, and from defect states to the conduction band, respectively.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 6","pages":"429 - 432"},"PeriodicalIF":1.8,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Density Functional Approach Study of Graphene Nanostructures in Terahertz Region: A Mini Review","authors":"Shilpa Kashyap, Mukesh Jewariya","doi":"10.1134/S1063783425600414","DOIUrl":"10.1134/S1063783425600414","url":null,"abstract":"<p>This review article is focused to present an outline of the advancement in the research area of graphene nanostructures such as graphene nanoribbons, graphene nanodisks, graphene nanomesh, graphene nanoplatelets, graphene quantum dots, etc., and their properties in terahertz (THz) region. The density functional theory (DFT) study of graphene nanostructures has also been focused along with their applications in the THz fields such as security, life sciences, analytical sciences, molecular spectroscopy and solid-state physics. The reported study about the graphene nanostructures and their applications have opened up the new gate of opportunities for the fabrication of futuristic graphene based nano-devices. Although a lot of research work has already been reported on the synthesis and the experimental investigation of graphene nanostructures in the literature survey, their computational study using THz spectroscopy is still less explored. That is why in the present article, the theoretical study of graphene nanostructures using DFT in the THz region has mainly been reviewed.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 5","pages":"402 - 412"},"PeriodicalIF":0.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143938424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sen, S. Paul, S. Rialach, K. Shaheen, S. Prerna, Manokamna, P. Sharma, G. Bhargava
{"title":"Exploring the Multifunctional Properties of Ni1–xZnxFe2O4 (x = 0, 0.1, 0.2, and 0.3) Ferrites Synthesized by Sol–Gel Citrate Approach","authors":"A. Sen, S. Paul, S. Rialach, K. Shaheen, S. Prerna, Manokamna, P. Sharma, G. Bhargava","doi":"10.1134/S1063783425600189","DOIUrl":"10.1134/S1063783425600189","url":null,"abstract":"<p>Zn-doped NiFe<sub>2</sub>O<sub>4</sub> was synthesized by using sol–gel citrate technique, and its phase homogeneity, surface morphology, optical, magnetic, and electrochemical performance were analyzed. X-ray diffraction (XRD) confirmed a cubic spinel structure with <i>Fd</i>3<i>m</i> space group symmetry. Field emission scanning electron microscopy (FE-SEM) revealed increasing agglomeration with Zn doping. Magnetic characterization via vibrating sample magnetometer (VSM) showed an increase in saturation magnetization with Zn content, specifying its soft magnetic behavior. UV-visible spectroscopy revealed an increase in bandgap energy from 1.7 to 3.89 eV with Zn doping. Current–voltage characteristics and voltage–time cycling data showed best conductivity for Zn composition <i>x</i> = 0.1. Impedance spectroscopy further indicated that charge transfer resistance was lowest for <i>x</i> = 0.1, measuring 50.23 Ω.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 5","pages":"338 - 349"},"PeriodicalIF":0.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143938421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
X. Zhang, D. I. Panov, V. A. Spiridonov, N. K. Kuzmenko, N. D. Prasolov, A. Yu. Ivanov, M. V. Dorogov, D. A. Bauman, A. E. Romanov
{"title":"Effects of Post-Annealing Temperature on the Properties of β-Ga2O3 Thin Films Prepared by Spray Pyrolysis","authors":"X. Zhang, D. I. Panov, V. A. Spiridonov, N. K. Kuzmenko, N. D. Prasolov, A. Yu. Ivanov, M. V. Dorogov, D. A. Bauman, A. E. Romanov","doi":"10.1134/S1063783425600888","DOIUrl":"10.1134/S1063783425600888","url":null,"abstract":"<p>Ga<sub>2</sub>O<sub>3</sub> polycrystalline thin films were deposited by spray pyrolysis method. The films were post-annealed at 700, 900, and 1100°C for 2 h, then the crystal structure, surface morphology and optical properties of the films were studied. As the post-annealing temperature increases, the average crystallite size of the film increased from approximately 6 to 21 nm, and the FWHM of rocking curve for the (400) plane of the β‑Ga<sub>2</sub>O<sub>3</sub> decreased from 1.29° to 0.38°. The increase of post-annealing temperature controls phase formation in the films. When post-annealed at 700°C, the Ga<sub>2</sub>O<sub>3</sub> film is not completely transformed into β phase. While post-annealed at temperatures ≥900°C, the Ga<sub>2</sub>O<sub>3</sub> in the films is all β-Ga<sub>2</sub>O<sub>3</sub>. Additionally, the increase in post-annealing temperature induced changes in the micro-strains of Ga<sub>2</sub>O<sub>3</sub> films, which resulted in a reduction of the bandgap. These findings highlight the critical role of post-annealing temperature in controlling the structural and optical properties of Ga<sub>2</sub>O<sub>3</sub> thin films, making it a key parameter for improving the quality of β-Ga<sub>2</sub>O<sub>3</sub> films.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 5","pages":"331 - 337"},"PeriodicalIF":0.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143938665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. A. Jahangirli, A. B. Rahimli, B. H. Mehdiyev, R. G. Seidov, T. O. Bayramova, S. S. Osmanova, J. A. Guliyev
{"title":"Electronic Structure and Dielectric Functions of GaInS3 from Ab initio and Experimental Studies","authors":"Z. A. Jahangirli, A. B. Rahimli, B. H. Mehdiyev, R. G. Seidov, T. O. Bayramova, S. S. Osmanova, J. A. Guliyev","doi":"10.1134/S1063783425600980","DOIUrl":"10.1134/S1063783425600980","url":null,"abstract":"<p>Band structure and dielectric functions of GaInS<sub>3</sub> studied experimentally by spectral ellipsometry and theoretically using density functional theory (DFT). The real and imaginary components of optical functions measured from 0.7 to 6.5 eV. The band gap was determined from the computed density of states (DOS). An analysis of atom-projected partial density of states (PDOS) provided insights into the nature of chemical bonding in GaInS<sub>3</sub>.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 5","pages":"373 - 377"},"PeriodicalIF":0.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143938663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}