Physics of the Solid State最新文献

{"title":"Retraction Note: Voltage-Induced Changes in the Transmission Spectrum and Optoelectronic Behavior of Hydrogen-Passivated Graphene Nanoribbons","authors":"Wenbo Li, Zishuo Cai, Hojat Allah Badehian","doi":"10.1134/S1063783426070012","DOIUrl":"10.1134/S1063783426070012","url":null,"abstract":"","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 7","pages":"663 - 663"},"PeriodicalIF":2.4,"publicationDate":"2026-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phonons, Exciton-Polaritons and Molarity-Dependent Properties of ZnO: A Combined First-Principles and Experimental Study","authors":"Abdelkader Tab,&nbsp;Benameur Amiri,&nbsp;Mohamed Allami","doi":"10.1134/S1063783426600433","DOIUrl":"10.1134/S1063783426600433","url":null,"abstract":"<p>Zinc oxide (ZnO) is a pivotal wide-bandgap semiconductor for optoelectronic and spintronic applications. This study presents a holistic investigation that synergistically combines first-principles simulations with controlled experimental synthesis to unravel the fundamental and tunable properties of sol-gel derived ZnO nanofilms. On the theoretical front, we employ Density Functional Perturbity Theory (DFPT) within the Quantum ESPRESSO framework to calculate the complete phonon dispersion, density of states, and anisotropic LO-TO splitting of wurtzite ZnO, confirming its dynamical stability and characterizing its vibrational fingerprint. Complementary many-body perturbation theory calculations using the YAMBO code provide insights into excitonic effects within the electronic structure. Experimentally, we systematically explore the influence of precursor molarity (0.2–0.5 mol/L) on the properties of spin-coated ZnO samples. X-ray diffraction reveals improved crystallinity and a potential shift in preferred orientation with increasing concentration. Optical spectroscopy shows a characteristic bandgap (~3.24–3.25 eV) with high visible transparency, while detailed electrical characterization demonstrates that carrier mobility increases significantly with molarity, rising from ~8–10 to ~14–16 cm²/V s. Interestingly, electrical resistivity remains stable (~54 Ω cm) across the molarity range, suggesting a compensatory balance between mobility and carrier concentration. Magnetoresistance measurements further indicate a face-dependent response that diminishes in more crystalline samples. By directly correlating the theoretically predicted phonon spectra and excitonic features with experimentally observed trends in structure, optics, and charge transport, this work provides a comprehensive micro-to-macro understanding of ZnO. Our findings establish precursor molarity as a critical, tunable synthesis parameter and offer actionable insights for engineering ZnO films with optimized properties for targeted device applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"546 - 559"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Green Light-Emitting Diodes Based on InGaN/GaN Quantum Wells Incorporating an Ultrathin InN-delta Layer","authors":"Anup Gorai","doi":"10.1134/S1063783425604333","DOIUrl":"10.1134/S1063783425604333","url":null,"abstract":"<p>In this study, theoretical analysis of the possibility of efficient green emission from InGaN–InN/GaN quantum well (QW) light-emitting diode (LED) structures employing an ultrathin InN-delta layer is provided. A self-consistent Schrödinger–Poisson approach implemented in MATLAB is used to compute energy states, carrier distributions, and recombination processes. The delta-layer design yields over a 2.5-fold increase in transition probability and an increase in the spontaneous radiative recombination rate by almost a factor of three, as compared to conventional InGaN/GaN QWs, enabling efficient green emission at 2.23 eV (λ = 556 nm). Radiative efficiency analysis further confirms a significant optical performance improvement. Moreover, by varying the InN-delta layer thickness from 0 to 10 Å, the emission energy can be tuned from the visible cyan (2.5 eV) to the near-infrared (1.09 eV), with transition probabilities from above 38% up to 54%. These findings establish InN-delta layer engineering as a novel pathway toward high-efficiency, wavelength-flexible InGaN-based light emitters.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"518 - 524"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Microscopic Theory of Local Spin Excitations in a Hexagonal Ferromagnetic Semiconductor Nanotubes","authors":"V. A. Tanriverdiyev,&nbsp;N. A. Abdullayev,&nbsp;R. Z. Amirov,&nbsp;İ. N. İbrahimov,&nbsp;V. S. Tagiyev","doi":"10.1134/S1063783426600214","DOIUrl":"10.1134/S1063783426600214","url":null,"abstract":"<p>In this work, local spin excitations in a ferromagnetic semiconductor nanotube with hexagonal symmetry are investigated. The system is described by a Hamiltonian that includes not only the Heisenberg-type exchange interaction between localized spins, but also the <i>s–d</i> exchange interaction between localized spins and the spins of conduction electrons. The dynamics of spin excitations is studied within the Green’s function formalism, and the magnon spectrum is derived in an analytical form. The influence of temperature on the average spin is analyzed using self-consistent equations. The obtained results are important for understanding the magnetic properties of ferromagnetic semiconductor nanosystems.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"502 - 506"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Isovalent Zn-Doping on Electrical Conductivity in SnSe Thin Films","authors":"Manisha Yadav,&nbsp;Vishal Singh,&nbsp;Balaji Rao Ravuri,&nbsp;Sanjeev K. Sharma,&nbsp;Archana Jayaram,&nbsp;Navaneethan Muthu,&nbsp;Meetu Bharti,&nbsp;Ajay Singh,&nbsp;Vijay Singh","doi":"10.1134/S1063783425603194","DOIUrl":"10.1134/S1063783425603194","url":null,"abstract":"<p>In this study, we propose an efficient strategy to improve the electrical properties of <i>n</i>-type tin selenide (SnSe) thin films by isovalent zinc (Zn) doping. The Zn-doped film constructed a network structure of crisscrossed SnSe nanosheets as origami to promote charge transport. Structural studies showed that Zn incorporation slightly enlarged the lattice and decreased the indirect bandgap from 0.95 eV in the undoped films to 0.79 eV in the Zn-doped samples. The Hall and Seebeck measurements at room temperature (RT) indicated <i>n</i>-type conduction of undoped and Zn-doped films. In contrast, the undoped films exhibited space-charge-limited current (SCLC) owing to deep trap states and weak nanosheet connectivity, whereas Zn doping restored ohmic conduction via enhanced carrier concentrations and improved nanosheet junctions. Collectively, this work demonstrates how isovalent Zn doping can suppress structural defects and activate improved electrical transport in SnSe thin films, thereby making them more suitable for future thermoelectric and optoelectronic applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"537 - 545"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Investigation of Optical Transitions in GaAs Quantum Wires under External Electric and Magnetic Fields","authors":"B. G. Ibragimov,&nbsp;G. B. Ibragimov,&nbsp;S. A. Zalova","doi":"10.1134/S1063783426600081","DOIUrl":"10.1134/S1063783426600081","url":null,"abstract":"<p>The optical properties of a GaAs quantum wire subjected to external electric and magnetic fields are theoretically investigated within the effective-mass approximation. The combined influence of crossed electric and magnetic fields on intersubband and interband optical absorption is analyzed with particular emphasis on room-temperature operation. The results reveal that the magnetic field significantly enhances the lateral confinement, leading to pronounced blue-shifts of the optical transition energies for both intersubband and interband processes. In contrast, the electric field mainly affects the absorption intensities through wave-function displacement and modulation of electron–hole overlap, while exerting only a weak influence on the transition energies. The magnetic-field-induced tunability is shown to remain robust at <i>T</i> = 300 K, despite phonon-induced spectral broadening. These findings demonstrate that GaAs quantum wires offer a high degree of controllability under external fields and represent promising candidates for tunable infrared and magneto-optoelectronic applications.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"495 - 501"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric Performance and First Principles Calculations of the Type-VIII Clathrates Ba8Ga16–xAgxSn30","authors":"Decong Li,&nbsp;Yongzhi Wang,&nbsp;Hanming Zhu,&nbsp;Kunyong Kang,&nbsp;Xiangjiang Xiao","doi":"10.1134/S1063783425603510","DOIUrl":"10.1134/S1063783425603510","url":null,"abstract":"<p>Single crystals of the <i>n</i>-type type-VIII clathrate Ba₈Ga_{16–<i>x</i>}Ag_<i>x</i>Sn₃₀ (<i>x</i> = 0, 0.5, 1) were synthesized using the Sn-flux method. Elemental analysis reveals an extremely low actual Ag incorporation (<i>x</i>_real ≈ 0.034–0.037) despite much higher nominal compositions. From a theoretical standpoint, the structural and electronic properties of the Ag-substituted type-VIII clathrate Ba₈Ga_{16–<i>x</i>}Ag_<i>x</i>Sn₃₀ were systematically investigated using first-principles calculations. All samples exhibited negative Seebeck coefficients across the measured temperature range, confirming their <i>n</i>-type conduction. However, the results derived from theoretical calculations indicated that all samples displayed <i>p</i>-type conduction behavior. The interesting discrepancy between the experimental and computational results is attributed to variations in the ratio of framework atoms. Detailed analysis confirmed that these clathrates are indirect bandgap semiconductors, with the bandgap widening as the Ag doping concentration increases. Experimentally, the magnitude of the Seebeck coefficient for the <i>x</i> = 1 sample reached approximately 330 μV K^–1 at 600 K. Furthermore, the temperature-dependent transport properties of these clathrates are consistent with the typical behavior of heavily doped semiconductors. Consequently, the <i>x</i> = 1 sample achieved a maximum power factor of 1.49 × 10^–3 W m^–1 K^–2 at approximately 540 K. Among all synthesized Ba₈Ga_{16–<i>x</i>}Ag_<i>x</i>Sn₃₀ compounds, the <i>x</i> = 1 sample exhibited the highest thermoelectric performance across the measured temperature range, reaching an estimated maximum figure of merit of 1.2 at 600 K.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"507 - 517"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Enhancement of Mechanical and Thermoelectric Properties in Ag2Te through Si Nanoinclusions","authors":"Sajid Ahmad","doi":"10.1134/S1063783426600706","DOIUrl":"10.1134/S1063783426600706","url":null,"abstract":"<p>Ag₂Te is a promising thermoelectric material for near room temperature applications. In this study, we successfully synthesized Ag₂Te and Ag₂Te–X Si (X = 2–5 wt %) nanocomposites by incorporating elemental silicon into the Ag₂Te matrix through mechanical alloying. The effect of Si incorporation on the thermoelectric properties was systematically investigated from 300 to 600 K. The thermoelectric performance of the resultant nanocomposite materials was significantly improved by the addition of Si. This improvement is mainly attributed to interface-driven energy filtering and increased phonon scattering at the Si/Ag₂Te interfaces. These effects resulted in an increase in the power factor to 1511.5 μW/m K² and a reduction in the thermal conductivity to 0.92 W/m K at 300 K for the Ag₂Te –4.5 wt % Si nanocomposite. As a result, an improved thermoelectric figure of merit (<i>ZT</i>) of ~0.48 at 300 K was achieved, which is ~49% higher than that of pure Ag₂Te (<i>ZT</i> ~ 0.32). This is one of the highest reported values for Ag₂Te at room temperature. Additionally, the nanocomposite showed an improved average <i>ZT</i> of ~0.35 over the temperature range of 300–600 K. This work presents an effective second phase engineering strategy for enhancing the thermoelectric properties of <i>n</i>-type Ag₂Te alloys for near room-temperature applications. Furthermore, notable improvements in the mechanical properties of the composite sample were observed.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"525 - 536"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamic Structural Evolution and Anisotropy Analysis of Ni/Al Solid–Liquid Interfaces during Non-Equilibrium Solidification","authors":"H. Y. Zhang,&nbsp;Q. W. Ding,&nbsp;B. Liu,&nbsp;Dan Wang,&nbsp;Y. K. Zhu,&nbsp;L. J. Dong","doi":"10.1134/S1063783426600032","DOIUrl":"10.1134/S1063783426600032","url":null,"abstract":"<p>Dynamic structures of the solid–liquid interface (SLI) during solidification along the (100) and (110) orientations of Ni and Al were investigated using molecular dynamics simulations. Non-equilibrium solidification results show that although the global system temperature reaches equilibrium, a pronounced temperature gradient exists near the interface. This phenomenon arises mainly from two factors: the Nose’–Hoover thermostat regulates atomic velocities based on global temperature without accounting for local variations, and classical molecular dynamics neglects electronic contributions to thermal conduction. Structural density analysis reveals that the density near the crystal–liquid interface exhibits ordered oscillations within the transition layer. The interfacial concentration deficit is negligible at small undercoolings and increases gradually with increasing undercooling, which correlates with the temperature-dependent interface growth rate. Two-dimensional structure factor and atomic configuration analyses demonstrate that the crystal-to-liquid transition proceeds from long-range order to short-range order via a gradual decay of structural ordering. A small number of vacancy defects appear in the crystalline layers, and no significant orientational anisotropy is observed between the (100) and (110) interfaces.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 6","pages":"483 - 494"},"PeriodicalIF":2.4,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Annealing on the Optical Properties of Gallium Oxide Thin Films","authors":"Xinyu Zhang,&nbsp;Weiwei Long,&nbsp;Liyao Zhang","doi":"10.1134/S1063783426600196","DOIUrl":"10.1134/S1063783426600196","url":null,"abstract":"<p>Ga₂O₃ is widely used in power devices, ultraviolet photodetectors and light emitting diodes. Defects, such as oxygen vacancies, gallium vacancies and gallium vacancy-oxygen vacancy pairs, play an important role in the optical property. Ga₂O₃ thin films are grown by electron beam evaporation and post-growth annealing is performed to improve the structural and optical quality. The effects of different annealing parameters (temperatures, atmospheres, durations and gas flow rates) on the optical properties of Ga₂O₃ are investigated. The structural property is continuously improved with the annealing temperature, while the photoluminescence (PL) intensity is the strongest in Ga₂O₃ annealed at 900°C. No PL is observed in the as-grown and low-temperature (&lt;600°C) annealed Ga₂O₃. The PL intensities are significantly enhanced by annealing, especially in the blue–green region. Annealing under O₂ at above 900°C eliminates the near ultraviolet emission, which is from the self-trapped excitons, while annealing under N₂ or vacuum has no such effect. Among the samples annealed in vacuum, N₂ and O₂, the sample annealed in O₂ shows the best structural and optical properties. For the annealing durations increasing from 0.5 to 1.5 h, the PL intensity first slightly increases and then decreases. The PL intensity of samples annealed in O₂ with different flow rates shows similar trend.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"68 5","pages":"427 - 436"},"PeriodicalIF":1.8,"publicationDate":"2026-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147968157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}