S. G. Asadullayeva, Z. A. Jahangirli, M. A. Musayev, Q. Y. Eyyubov, A. S. Abiyev
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引用次数: 0
摘要
本文研究了ZnIn2S4单晶的光致发光（PL）特性。在5 ~ 300 K的温度范围内进行了PL发射特性的研究。在725 nm （1.71 eV）的红外波段观测到最大发光。在较低的温度下，这个峰经历蓝移，向更高的能量移动。在5 K时，峰移了40 nm，在685 nm （1.81 eV）处观察到。在室温下，ZnIn2S4的光致发光激发（PLE）分析显示，在2.75 eV （450 nm）和2.33 eV （530 nm）处有明显的光谱最大值，分别对应于价带到导带和缺陷态到导带的电子跃迁。
Near-Infrared Photoluminescence from ZnIn2S4 Layered Single Crystals
This study presents investigation of the photoluminescence (PL) properties of ZnIn2S4 single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300 K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71 eV). At lower temperatures, this peak undergoes a blue shift, moving towards higher energies. At 5 K, the peak shifted by 40 nm, being observed at 685 nm (1.81 eV). At ambient temperature, the photoluminescence excitation (PLE) analysis of ZnIn2S4 revealed distinct spectral maxima at 2.75 eV (450 nm) and 2.33 eV (530 nm), corresponding to electronic transitions from the valence band to the conduction band, and from defect states to the conduction band, respectively.
期刊介绍：
Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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