Nanotechnologies in Russia最新文献

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Mechanisms of the Formation of Conductive Channels in Bipolar Memristors of Various Designs
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167624602900
A. N. Aleshin, N. V. Zenchenko, K. Yu. Kharitonova, O. A. Ruban
{"title":"Mechanisms of the Formation of Conductive Channels in Bipolar Memristors of Various Designs","authors":"A. N. Aleshin,&nbsp;N. V. Zenchenko,&nbsp;K. Yu. Kharitonova,&nbsp;O. A. Ruban","doi":"10.1134/S2635167624602900","DOIUrl":"10.1134/S2635167624602900","url":null,"abstract":"<p>The work presents and describes various mechanisms for the formation of a conductive channel in bipolar memristors of the vacancy and ionic types: in the first case, due to the generation and growth of conductive threads, and in the second, due to segregation processes with the formation of spatial associations of ions from the material of the active electrode. The current—voltage characteristics for both types of memristors are presented and a comparison of the design features of these memristors is conducted.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S226 - S230"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2D X-ray Focusing Device Based on Silicon Planar Refractive Lenses
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167624602389
M. N. Sorokovikov, D. A. Zverev, A. A. Barannikov, A. L. Astafyev, I. B. Panormov, V. A. Yunkin, A. Y. Seregin, Y. A. Volkovskiy, P. A. Prosekov, A. A. Snigirev
{"title":"2D X-ray Focusing Device Based on Silicon Planar Refractive Lenses","authors":"M. N. Sorokovikov,&nbsp;D. A. Zverev,&nbsp;A. A. Barannikov,&nbsp;A. L. Astafyev,&nbsp;I. B. Panormov,&nbsp;V. A. Yunkin,&nbsp;A. Y. Seregin,&nbsp;Y. A. Volkovskiy,&nbsp;P. A. Prosekov,&nbsp;A. A. Snigirev","doi":"10.1134/S2635167624602389","DOIUrl":"10.1134/S2635167624602389","url":null,"abstract":"<p>The paper focuses on developing, manufacturing, and testing a two-dimensional X-ray focusing device based on silicon planar compound refractive lenses. Using compound refractive lenses installed in cross geometry one after another along the optical axis allows for generating a beam with specified parameters. A distinctive feature of the developed device is the ability to correct astigmatism of the optical system. Two-dimensional focusing of X-ray radiation with astigmatism correction was experimentally demonstrated at the RKFM beamline “KISI–Kurchatov.” The resulting focused X-ray beam, characterized using the knife-edge technique, had a size of approximately 1.5 µm, with equal dimensions in both the vertical and horizontal directions. The experimental results were compared with theoretical estimates and computer simulations.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S183 - S190"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microneedles: Heterogeneous Intelligent Microsystems for Transdermal Monitoring and Correction of the Body’s State
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167625600038
O. A. Testov, V. M. Aivazyan, I. K. Khmelnitskiy, V. V. Luchinin, K. G. Gareev, A. M. Karelin, S. E. Parfenovich, D. O. Testov, E. E. Kholodkova
{"title":"Microneedles: Heterogeneous Intelligent Microsystems for Transdermal Monitoring and Correction of the Body’s State","authors":"O. A. Testov,&nbsp;V. M. Aivazyan,&nbsp;I. K. Khmelnitskiy,&nbsp;V. V. Luchinin,&nbsp;K. G. Gareev,&nbsp;A. M. Karelin,&nbsp;S. E. Parfenovich,&nbsp;D. O. Testov,&nbsp;E. E. Kholodkova","doi":"10.1134/S2635167625600038","DOIUrl":"10.1134/S2635167625600038","url":null,"abstract":"<p>The use of microneedles for discrete and continuous monitoring and correction of the body’s state is a progressive direction in personalized medicine. The desire to minimize the adverse effects of invasive diagnostic methods and increase the effectiveness of pharmacotherapeutic interventions determines the intellectualization of microneedles, their designs, and technologies of use. Microneedles and their arrays are presented as complex functional microsystems, the creation of which is based on the use of microtechnology and nanotechnology processes, as well as heterogeneous organic–inorganic compositions.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S12 - S25"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoparticles in Laser Ablation: Fractions
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167624602195
V. I. Yusupov, V. S. Zhigarkov
{"title":"Nanoparticles in Laser Ablation: Fractions","authors":"V. I. Yusupov,&nbsp;V. S. Zhigarkov","doi":"10.1134/S2635167624602195","DOIUrl":"10.1134/S2635167624602195","url":null,"abstract":"<p>The pulsed laser ablation of targets is a promising direction for creating metal nanoparticles that are widely used in various fields of science, technology, and for biomedical applications. To improve laser technologies, it is necessary to control the ablation process, ensuring the necessary size distribution of the resulting nanoparticles, which is often bimodal. The work proposes an approach that allows one to estimate the mass of the nanoparticle fraction during laser ablation with short pulses from a scanning electron microscopy (SEM) image or microphotograph of holes in a metal film. The investigation is carried out using nanosecond laser pulses and gold films 50 nm in thickness.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S32 - S36"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and Characterization of 161TB-DOTA-PSMA-617 Using a New Cell Model
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167624602808
O. A. Shashkova, N. A. Verlov, K. O. Avrov, S. V. Soloveva, L. A. Terekhina, A. A. Pinevich, S. V. Shatik, V. V. Zaicev, E. B. Furkina, M. A. Nadporozskiy, V. S. Burdakov, I. A. Kulakov, T. A. Shtam, A. A. Stanzevskiy, M. P. Samoylovich, A. L. Konevega
{"title":"Preparation and Characterization of 161TB-DOTA-PSMA-617 Using a New Cell Model","authors":"O. A. Shashkova,&nbsp;N. A. Verlov,&nbsp;K. O. Avrov,&nbsp;S. V. Soloveva,&nbsp;L. A. Terekhina,&nbsp;A. A. Pinevich,&nbsp;S. V. Shatik,&nbsp;V. V. Zaicev,&nbsp;E. B. Furkina,&nbsp;M. A. Nadporozskiy,&nbsp;V. S. Burdakov,&nbsp;I. A. Kulakov,&nbsp;T. A. Shtam,&nbsp;A. A. Stanzevskiy,&nbsp;M. P. Samoylovich,&nbsp;A. L. Konevega","doi":"10.1134/S2635167624602808","DOIUrl":"10.1134/S2635167624602808","url":null,"abstract":"<p>Terbium-161 is a radioisotope characterized by β-emission, emission of Auger electrons, conversion electrons, and, to a lesser extent, gamma and X-rays. Tb-161 radioconjugate with the DOTA-PSMA-617 ligand (considered as a promising drug for radiotherapy of prostate cancer) was synthesized on the basis of components produced in Russian Federation. The physicochemical characteristics of <sup>161</sup>Tb-DOTA-PSMA-617 were investigated. The ability of the radioconjugate to bind to cell membrane receptor was studied on cell line in vitro and in mice in vivo using a new CT26-PSMA cell model representing genetically modified mouse carcinoma cells expressing human PSMA. The pharmacokinetics and biodistribution of the radioconjugate were investigated. The radiopharmaceutical demonstrated highly specific accumulation in the tumor expressing human PSMA unlike in the control tumor. It was not significantly accumulated in the kidneys and other animals’ organs. The blood half-life time of the radiopharmaceutical was determined as 38.4 min. Thus, according to the main criteria, the synthesized radioconjugate <sup>161</sup>Tb-DOTA-PSMA-617 is a promising radiopharmaceutical for the treatment of prostate cancer.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S218 - S225"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of the Activation Time on the Piezoelectric Properties of Nitrogen-Doped Carbon Nanotubes
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167624602778
O. I. Soboleva, M. R. Polyvianova, O. I. Il’in, M. V. Il’ina
{"title":"Influence of the Activation Time on the Piezoelectric Properties of Nitrogen-Doped Carbon Nanotubes","authors":"O. I. Soboleva,&nbsp;M. R. Polyvianova,&nbsp;O. I. Il’in,&nbsp;M. V. Il’ina","doi":"10.1134/S2635167624602778","DOIUrl":"10.1134/S2635167624602778","url":null,"abstract":"<p>At present, there is an increasing need to create energy-efficient power supplies for wearable devices. In recent studies, we found that nitrogen-doped carbon nanotubes (N-CNTs), which exhibit anomalous piezoelectric properties, can be used as the basis for such devices. This paper presents the results of studying the effect of the activation time of catalytic centers during the growth of carbon nanotubes on the value of their piezoelectric strain coefficient and the value of the generated current. It is found that with an increase in the activation time of catalytic centers from 1 to 30 min, the value of the piezoelectric strain coefficient decreases from 19.78 to 4.49 pm/V, which is associated with a change in the geometric dimensions of the catalytic centers and, consequently, the structure of the N-CNTs. The results obtained can be used to create energy-efficient piezoelectric nanogenerators.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S112 - S116"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Halide Perovskites: New Materials for Thermoelectric Application
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167624602754
A. S. Ivanova, A. S. Khanina, P. A. Gostishchev, D. S. Saranin
{"title":"Halide Perovskites: New Materials for Thermoelectric Application","authors":"A. S. Ivanova,&nbsp;A. S. Khanina,&nbsp;P. A. Gostishchev,&nbsp;D. S. Saranin","doi":"10.1134/S2635167624602754","DOIUrl":"10.1134/S2635167624602754","url":null,"abstract":"<p>This review presents theoretical and experimental studies of hybrid and metal halide perovskites, which have found active application in photoelectronics and optoelectronics. The extremely low thermal conductivity of halide perovskites has attracted the attention of researchers for their investigation as thermoelectric materials as well. This review discusses methods of synthesis, the microstructure, and thermoelectric properties of thin-film and bulk halide perovskites studied over the past five years. Possible pathways to enhance the efficiency of these materials are also described.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S1 - S11"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxygen Transfer during the Vacuum Annealing of an Ultrathin Sn/Si Epitaxial Layer
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167625600130
N. I. Boikov, O. A. Chuvenkova, E. V. Parinova, S. I. Kurganskii, A. A. Makarova, D. A. Smirnov, R. G. Chumakov, A. M. Lebedev, S. S. Titova, E. A. Suprun, E. Yu. Gerasimov, S. Yu. Turishchev
{"title":"Oxygen Transfer during the Vacuum Annealing of an Ultrathin Sn/Si Epitaxial Layer","authors":"N. I. Boikov,&nbsp;O. A. Chuvenkova,&nbsp;E. V. Parinova,&nbsp;S. I. Kurganskii,&nbsp;A. A. Makarova,&nbsp;D. A. Smirnov,&nbsp;R. G. Chumakov,&nbsp;A. M. Lebedev,&nbsp;S. S. Titova,&nbsp;E. A. Suprun,&nbsp;E. Yu. Gerasimov,&nbsp;S. Yu. Turishchev","doi":"10.1134/S2635167625600130","DOIUrl":"10.1134/S2635167625600130","url":null,"abstract":"<p>The features of the morphology and physical–chemical state of five epitaxially formed monolayers of tin at the interface with a thin silicon buffer layer on a silicon substrate and transformation of the epitaxial structure as a result of in situ thermal annealing from the point of view of the charge state of silicon atoms are studied. X-ray photoelectron spectroscopy using synchrotron radiation and scanning electron microscopy are used. The possibility of oxygen atom transport to the silicon buffer layer during storage of the structures in laboratory conditions is shown. Annealing in ultrahigh vacuum causes a restructuring of the surface of such structures, which is accompanied by oxygen atom redistribution to the exposed surface of the epitaxial silicon buffer with the formation of a thin SiO<sub>2</sub> layer and the assembly of tin into clusters on this surface.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S93 - S97"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peculiarities of Electron Transport through the Contact Regions between Semiconductor Quantum Wires with Different Cross Sections
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S263516762460278X
D. V. Pozdnyakov, A. V. Borzdov, V. M. Borzdov
{"title":"Peculiarities of Electron Transport through the Contact Regions between Semiconductor Quantum Wires with Different Cross Sections","authors":"D. V. Pozdnyakov,&nbsp;A. V. Borzdov,&nbsp;V. M. Borzdov","doi":"10.1134/S263516762460278X","DOIUrl":"10.1134/S263516762460278X","url":null,"abstract":"<p>In the present work, the peculiarities of electron transport upon the transition from quantum wires with smaller cross sections to quantum wires with larger cross sections are studied. The probabilities of electron transfer through corresponding contact regions of such quantum wires are calculated as functions of the charge-carrier kinetic energy and quantum-wire cross section ratio. The peculiarities of electron transfer through defect regions in quantum wires in the form of rectangular grooves and steps are also studied. The probabilities of electron transfer through the defect regions are calculated as functions of the electron kinetic energy and geometry and size of the defects. The probability density distributions of electron detection in different regions of the modeled structures are calculated.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S117 - S123"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and Electrophysical Properties of Copper Oxide Films for Gas Sensors
IF 0.8
Nanotechnologies in Russia Pub Date : 2025-03-24 DOI: 10.1134/S2635167625600087
E. S. Rembeza, T. V. Svistova, N. N. Kosheleva, D. S. Permyakov, M. V. Grechkina, T. G. Menshikova, S. A. Romasev
{"title":"Synthesis and Electrophysical Properties of Copper Oxide Films for Gas Sensors","authors":"E. S. Rembeza,&nbsp;T. V. Svistova,&nbsp;N. N. Kosheleva,&nbsp;D. S. Permyakov,&nbsp;M. V. Grechkina,&nbsp;T. G. Menshikova,&nbsp;S. A. Romasev","doi":"10.1134/S2635167625600087","DOIUrl":"10.1134/S2635167625600087","url":null,"abstract":"<p>Thin copper oxide films are produced by the sol-gel technique. The films have a fine-grained structure. After annealing at temperatures of 400 and 500°C, the grain size decreases. The films have high values of the gas sensitivity (resistance change of 30%) and low values of the temperature of the maximum gas sensitivity (180–190°C) to ethanol, acetone, and ammonia vapors in the air.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S152 - S157"},"PeriodicalIF":0.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143688612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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