Yu. I. Shtern, M. S. Rogachev, M. Yu. Shtern, A. A. Sherchenkov, N. Yu. Tabachkova, B. R. Mustafoev
{"title":"基于SiGe的热电材料热膨胀系数的温度依赖性研究","authors":"Yu. I. Shtern, M. S. Rogachev, M. Yu. Shtern, A. A. Sherchenkov, N. Yu. Tabachkova, B. R. Mustafoev","doi":"10.1134/S2635167625600282","DOIUrl":null,"url":null,"abstract":"<p>The work presents studies of the temperature dependences of the coefficients of linear thermal expansion (CLTE) of effective thermoelectric materials Si<sub>0.8</sub>Ge<sub>0.2</sub> (1.8 wt % P) and Si<sub>0.8</sub>Ge<sub>0.2</sub> (0.8 wt % B), which are synthesized by induction melting, and nanostructured thermoelectric materials obtained by spark plasma sintering. The density of the nanostructured thermoelectric materials (2.94 g/cm<sup>3</sup>) is 98% of the density of the synthesized thermoelectric materials (2.99 g/cm<sup>3</sup>). The synthesized and nanostructured thermoelectric materials have similar Vickers microhardness values of ~1100 <i>H</i><sub>V</sub>. The CLTE value of the nanostructured thermoelectric materials is 2–3% higher than that of the synthesized thermoelectric materials. The temperature dependences of the CLTE are similar in nature and are within the range of 3.84 × 10<sup>–6</sup> up to 4.71 × 10<sup>–6</sup> K<sup>–1</sup>. For <i>n</i>- and <i>p</i>-type SiGe, the values of the CLTE are almost identical.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"20 3","pages":"313 - 318"},"PeriodicalIF":0.8000,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of the Temperature Dependences of the Thermal Expansion Coefficients of Thermoelectric Materials Based on SiGe\",\"authors\":\"Yu. I. Shtern, M. S. Rogachev, M. Yu. Shtern, A. A. Sherchenkov, N. Yu. Tabachkova, B. R. Mustafoev\",\"doi\":\"10.1134/S2635167625600282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The work presents studies of the temperature dependences of the coefficients of linear thermal expansion (CLTE) of effective thermoelectric materials Si<sub>0.8</sub>Ge<sub>0.2</sub> (1.8 wt % P) and Si<sub>0.8</sub>Ge<sub>0.2</sub> (0.8 wt % B), which are synthesized by induction melting, and nanostructured thermoelectric materials obtained by spark plasma sintering. The density of the nanostructured thermoelectric materials (2.94 g/cm<sup>3</sup>) is 98% of the density of the synthesized thermoelectric materials (2.99 g/cm<sup>3</sup>). The synthesized and nanostructured thermoelectric materials have similar Vickers microhardness values of ~1100 <i>H</i><sub>V</sub>. The CLTE value of the nanostructured thermoelectric materials is 2–3% higher than that of the synthesized thermoelectric materials. The temperature dependences of the CLTE are similar in nature and are within the range of 3.84 × 10<sup>–6</sup> up to 4.71 × 10<sup>–6</sup> K<sup>–1</sup>. For <i>n</i>- and <i>p</i>-type SiGe, the values of the CLTE are almost identical.</p>\",\"PeriodicalId\":716,\"journal\":{\"name\":\"Nanotechnologies in Russia\",\"volume\":\"20 3\",\"pages\":\"313 - 318\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2025-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnologies in Russia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S2635167625600282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnologies in Russia","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S2635167625600282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
Study of the Temperature Dependences of the Thermal Expansion Coefficients of Thermoelectric Materials Based on SiGe
The work presents studies of the temperature dependences of the coefficients of linear thermal expansion (CLTE) of effective thermoelectric materials Si0.8Ge0.2 (1.8 wt % P) and Si0.8Ge0.2 (0.8 wt % B), which are synthesized by induction melting, and nanostructured thermoelectric materials obtained by spark plasma sintering. The density of the nanostructured thermoelectric materials (2.94 g/cm3) is 98% of the density of the synthesized thermoelectric materials (2.99 g/cm3). The synthesized and nanostructured thermoelectric materials have similar Vickers microhardness values of ~1100 HV. The CLTE value of the nanostructured thermoelectric materials is 2–3% higher than that of the synthesized thermoelectric materials. The temperature dependences of the CLTE are similar in nature and are within the range of 3.84 × 10–6 up to 4.71 × 10–6 K–1. For n- and p-type SiGe, the values of the CLTE are almost identical.
期刊介绍:
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