Study of the Temperature Dependences of the Thermal Expansion Coefficients of Thermoelectric Materials Based on SiGe

IF 0.8 Q3 Engineering

Nanotechnologies in Russia Pub Date : 2025-08-25 DOI:10.1134/S2635167625600282

Yu. I. Shtern, M. S. Rogachev, M. Yu. Shtern, A. A. Sherchenkov, N. Yu. Tabachkova, B. R. Mustafoev

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Abstract

The work presents studies of the temperature dependences of the coefficients of linear thermal expansion (CLTE) of effective thermoelectric materials Si_0.8Ge_0.2 (1.8 wt % P) and Si_0.8Ge_0.2 (0.8 wt % B), which are synthesized by induction melting, and nanostructured thermoelectric materials obtained by spark plasma sintering. The density of the nanostructured thermoelectric materials (2.94 g/cm³) is 98% of the density of the synthesized thermoelectric materials (2.99 g/cm³). The synthesized and nanostructured thermoelectric materials have similar Vickers microhardness values of ~1100 H_V. The CLTE value of the nanostructured thermoelectric materials is 2–3% higher than that of the synthesized thermoelectric materials. The temperature dependences of the CLTE are similar in nature and are within the range of 3.84 × 10^–6 up to 4.71 × 10^–6 K^–1. For n- and p-type SiGe, the values of the CLTE are almost identical.

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基于SiGe的热电材料热膨胀系数的温度依赖性研究

本文研究了感应熔炼法合成的有效热电材料Si0.8Ge0.2 （1.8 wt % P）和Si0.8Ge0.2 （0.8 wt % B）的线性热膨胀系数（CLTE）与火花等离子烧结法制备的纳米结构热电材料的温度依赖性。纳米结构热电材料的密度（2.94 g/cm3）是合成热电材料密度（2.99 g/cm3）的98%。合成的热电材料与纳米结构的热电材料具有相似的维氏显微硬度值，均为~1100 HV。纳米结构热电材料的CLTE值比合成热电材料高2-3%。CLTE的温度依赖性在性质上相似，在3.84 × 10-6到4.71 × 10-6 K-1的范围内。对于n型和p型SiGe， CLTE的值几乎相同。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanotechnologies in Russia NANOSCIENCE & NANOTECHNOLOGY-

CiteScore

1.20

自引率

0.00%

发文量

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