70th Device Research Conference最新文献_第3页

Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna 利用自互补领结天线集成的三势垒谐振隧道二极管分析太赫兹零偏压探测器

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256934

M. Suhara, S. Takahagi, K. Asakawa, T. Okazaki, M. Nakamura, S. Yamashita, Y. Itagaki, M. Saito, A. Tchegho, G. Keller, A. Poloczek, W. Prost, F. Tegude

{"title":"Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna","authors":"M. Suhara, S. Takahagi, K. Asakawa, T. Okazaki, M. Nakamura, S. Yamashita, Y. Itagaki, M. Saito, A. Tchegho, G. Keller, A. Poloczek, W. Prost, F. Tegude","doi":"10.1109/DRC.2012.6256934","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256934","url":null,"abstract":"Recently, heavy emitter doping rather than decreasing the barrier thickness has boosted the peak current density of resonant tunneling diodes (RTDs) above 1,000 kA/cm2. Based on this achievement very mature InP-based RTD with current densities above 500 kA/cm2 are nowadays the leading solid-state THz device [1, 2]. Here, we show that even triple-barrier RTD (TBRTD) devices now reach a current density in excess of 250 kA/cm2 making this element ideally suited for rectification [3] but now at THz frequencies. Figure 1 is the state of art of THz detection sensitivity of previously reported zero bias detectors. Focusing on such zero bias broadband THz detection, we have also been studying on a design policy for a μm-sized on-chip self-complementally antenna and especially we have reported basic performances of a bow-tie antenna[4,5] integrated with a conventional homogeneous semiconductor mesa structure. However, it was still limited studies considering neither of actual nonlinear devices and peripheral circuits.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"23 1","pages":"77-78"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90923250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Regrown ohmic contacts to InxGa1−xAs approaching the quantum conductivity limit InxGa1−xAs的欧姆接触接近量子电导率极限

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257010

J. Law, A. Carter, S. Lee, A. Gossard, M. Rodwell

{"title":"Regrown ohmic contacts to InxGa1−xAs approaching the quantum conductivity limit","authors":"J. Law, A. Carter, S. Lee, A. Gossard, M. Rodwell","doi":"10.1109/DRC.2012.6257010","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257010","url":null,"abstract":"We report contact resistances between source-drain regrowth and underlying semiconductor quantum well channels in test structures designed for characterization of source and drain access resistances in III-V MOSFETs. Regrowths included both N+ InAs and N+ graded InAs-InxGa1-xAs; channel materials included both unstrained In0.53Ga0.47As and unstrained InAs. The access resistivity correlates strongly with the sheet carrier concentration of the 2-dimensional electron gas, consistent with quantum- but not classical- transport theory. With source-drain regrowth of InAs contacts to InAs channels, the total access resistance is within a factor of two of the inverse of Landauer's quantum-state-limited conductance [1-3]. The state-limited conductance in TLM structures and the ballistic MOSFET transconductance both arise from the same physical process, hence the Landauer term in the TLM resistance does not contribute to the MOSFET source access resistance. Application of TLM data to transistor characterization must therefore correct for the state-limited access resistivity. Samples with contacts regrown onto channels with high 5·1014/cm2 sheet carrier concentration, hence low quantum-state-limited resistance, showed extremely low 12.7 Ω-μm access resistivity. This demonstrates the utility of MBE regrowth for source/drain formation in III-V MOS technology.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"199-200"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90101620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

InAs avalanche photodiode with improved electric field uniformity 具有改善电场均匀性的雪崩光电二极管

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256992

S. Maddox, W. Sun, Z. Lu, H. Nair, J. Campbell, S. R. Bank

引用次数: 0

Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain 具有In0.53Ga0.47as沟道和III-N漏极的晶片键合异质结构单极晶体管的实验演示

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257041

S. Lal, Jing Lu, B. Thibeault, S. Denbaars, U. Mishra

引用次数: 0

Ga2O3 Schottky barrier diodes fabricated on single-crystal β-Ga2O3 substrates 在单晶β-Ga2O3衬底上制备Ga2O3肖特基势垒二极管

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257021

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi

引用次数: 3

Graphene nanomesh contacts and its transport properties 石墨烯纳米网接触及其输运性质

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257037

T. Chu, Zhihong Chen

引用次数: 2

Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V 垂直InAs纳米线mosfet，在VDS = 0.5 V时，IDS = 1.34 mA/µm, gm = 1.19 mS/µm

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256966

Karl‐Magnus Persson, Martin Berg, M. Borg, Jun Wu, Henrik Sjöland, E. Lind, L. Wernersson

引用次数: 8

High current density InAsSb/GaSb tunnel field effect transistors 高电流密度InAsSb/GaSb隧道场效应晶体管

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257038

A. Dey, B. Borg, B. Ganjipour, Martin Ek, Kimberly A. Dick, E. Lind, P. Nilsson, C. Thelander, L. Wernersson

引用次数: 12

N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256939

D. Denninghoff, J. Lu, M. Laurent, E. Ahmadi, S. Keller, U. Mishra

引用次数: 35

High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics 采用合成六方氮化硼栅极电介质的准独立石墨烯上的高性能、大面积石墨烯晶体管

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256986

M. Hollander, A. Agrawal, M. Bresnehan, M. Labella, K. Trumbull, R. Cavalero, S. Datta, J. A. Robinson

引用次数: 0