70th Device Research Conference最新文献_第2页

Low-frequency noise in contact and channel regions of ambipolar InAs nanowire transistors 双极性InAs纳米线晶体管接触区和沟道区的低频噪声

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257046

C. Delker, Yunlong Zi, Chen Yang, D. Janes

引用次数: 0

Comparison of graphene nanoribbons with Cu and Al interconnects 石墨烯纳米带与铜和铝互连的比较

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256995

Ning Wang, C. English, E. Pop

引用次数: 1

Dissipative quantum transport in nanoscale transistors 纳米级晶体管中的耗散量子输运

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256945

Jing Guo

引用次数: 0

Fabrication and characterization of field effect reconfigurable nanofluidic ionic diodes: Towards digitally-programmed manipulation of biomolecules 场效应可重构纳米流控离子二极管的制造与表征:迈向生物分子的数字编程操纵

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256993

W. Guan, R. Fan, M. Reed

引用次数: 0

Power reduction in nanomagnetic logic clocking through high permeability dielectrics 通过高磁导率电介质降低纳米磁逻辑时钟的功率

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256998

Peng Li, G. Csaba, V. Sankar, X. Sharon Hu, M. Niemier, W. Porod, G. Bernstein

{"title":"Power reduction in nanomagnetic logic clocking through high permeability dielectrics","authors":"Peng Li, G. Csaba, V. Sankar, X. Sharon Hu, M. Niemier, W. Porod, G. Bernstein","doi":"10.1109/DRC.2012.6256998","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256998","url":null,"abstract":"Nanomagnetic logic (NML) has emerged as a novel paradigm to realize non-volatile, nanometer scale, ultra-low energy digital logic [1]. Since there are large energy differences between magnetization states, an external stimulus is required for circuit re-evaluation. In our first experiments we applied an off-chip magnetic field along the hard (i.e., short) axis of a group of nanomagnets. Later, structures that generate fields on-chip were demonstrated [2]. These current-carrying copper wires clad with ferromagnetic material (Supermalloy, Ni79Fe16Mo5), can provide local magnetic fields for NML circuits. However, the required current densities could be as high as ∼107 A/cm2 [2]. The ratio of flux density to magnetic field strength (μ = B/H) can be increased by surrounding the magnets with a material of high permeability. While we will need to ensure that the binary state of a magnet is not adversely affected, candidate materials do exist. Freescale demonstrated enhanced permeability dielectrics (EPDs) with embedded magnetic nano-particles to increase the field from a word or bit line in field MRAM without increasing current [3]. That EPD particle sizes are below the superparamagnetic limit helps to ensure that a magnet's state is not unduly influenced. With similar considerations, we have proposed a clocking structure where EPD films surround the nanomagnets, as shown in Fig. 1. With this new design, the magnetic flux can be confined within the EPD film area instead of leaking to the air. As such, the field intensity for switching the nanomagnets can be increased, and the required current density and power for clocking can be reduced (potenitially by μr2 in the case of power). This work shows our efforts of integrating EPD films with nanomagnets for NML clocking.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"138 1","pages":"129-130"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86357368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Resistive switching in aluminum nitride 氮化铝的电阻开关

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256953

M. Marinella, J. Stevens, E. Longoria, P. Kotula

{"title":"Resistive switching in aluminum nitride","authors":"M. Marinella, J. Stevens, E. Longoria, P. Kotula","doi":"10.1109/DRC.2012.6256953","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256953","url":null,"abstract":"Resistive random access memories (ReRAM), also referred to as memristors, have gained a great deal of attention recently as a potential high density, low energy replacement for flash and DRAM. Furthermore, the analog properties of this device are a potential enabler of neuromorphic computing. Of particular interest are the class of ReRAM based on based on the valence change mechanism and fabricated from transition metal oxides (TMOs) such as TaOx and HfOx [1]. This particular class of ReRAM have achieved record endurance (1012 cycles) [2], sub-nanosecond switching speeds [3], and demonstrated operation in 10×10 nm devices [4]. For the first time, we present resistive switching in a ReRAM structure with an AlN based switching layer. The electrical characteristics are very similar to those observed in the valence change class of ReRAM. In particular, we have observed bipolar switching at less than ±1V and repeatable linear current-voltage (I-V) behavior at subswitching (read) voltages similar to the electrical characteristics of TaOx ReRAM. Physical analysis using TEM with electron energy loss spectroscopy (EELS) reveals that the switching layer contains oxygen, likely forming aluminum oxynitride (AlON).","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"17 1","pages":"89-90"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83032734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

New tunnel-FET architecture with enhanced ION and improved Miller Effect for energy efficient switching 新的隧道-场效应管结构，具有增强离子和改进的米勒效应，用于节能开关

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256999

A. Biswas, C. Alper, L. De Michielis, A. Ionescu

引用次数: 9

1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate 在Si衬底上MOCVD生长的AlGaN/GaN hemt的击穿电压为1.4 kV

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257015

S. L. Selvaraj, A. Watanabe, A. Wakejima, T. Egawa

引用次数: 5

Direct measurement of Dirac point and Fermi level at graphene/oxide interface by internal photoemission 石墨烯/氧化物界面上Dirac点和Fermi能级的内部光电发射直接测量

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256941

Kun Xu, C. Zeng, Qin Zhang, P. Ye, Kang L. Wang, C. Richter, D. Gundlach, N. Nguyen

{"title":"Direct measurement of Dirac point and Fermi level at graphene/oxide interface by internal photoemission","authors":"Kun Xu, C. Zeng, Qin Zhang, P. Ye, Kang L. Wang, C. Richter, D. Gundlach, N. Nguyen","doi":"10.1109/DRC.2012.6256941","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256941","url":null,"abstract":"We report the first direct measurement of the Dirac point, the Fermi level, and the work function of single layer gapless graphene by using photoemission threshold spectroscopy. Since the pioneering work of Novoselov et al in 2004, [1] graphene has attracted an immense amount of interest from all disciplines. [2] The knowledge of the physics of graphene-based devices has grown dramatically. Along with the recent success of large area chemical vapor deposition (CVD) growth of graphene, [3] it seems the industrial applications such as transparent electrodes, [4] field effect transistors, [5] and quantum well devices [6] are becoming more promising. However, the precise position of the Dirac point and Fermi level at the graphene/oxide interface has yet to be investigated; despite their importance in the design and modeling of graphene-based devices. In this paper, we present the study of a semi-transparent metal/high-k/graphene/SiO2/Si structure, and focus our study on the photoemission phenomena at the graphene/SiO2 interface. As a result, a complete electronic band alignment of the graphene/SiO2/Si system is accurately constructed for the first time.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"63 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90656254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Transparent diamond-based electrolyzer for integration with solar cell 与太阳能电池集成的透明钻石基电解槽

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257014

C. Pietzka, Z. Gao, Y. Xu, E. Kohn

引用次数: 0