具有In0.53Ga0.47as沟道和III-N漏极的晶片键合异质结构单极晶体管的实验演示

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6257041

S. Lal, Jing Lu, B. Thibeault, S. Denbaars, U. Mishra

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引用次数: 0

摘要

本文报道了全功能晶圆键合电流孔径垂直电子晶体管(BAVET)的首次演示。对于宽度为(75x2) f.m m、孔径长度为8 μm的器件，在Vgs = 0 V时测得最大漏极电流(Id)为29 mA，跨导(gm_d)为7.4 mS。

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Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain

This paper report the first demonstration of a fully functional wafer-bonded current aperture vertical electron transistor (BAVET). A maximum drain current (I_d) of 29 mA and transconductance (g_{m_d}) of 7.4 mS at a V_gs = 0 V is measured for a device with a width of (75x2) f.lm and an aperture length (L_ap) of 8 μm.

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70th Device Research Conference

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